Effects of an ultrashort prepulse on soft X-ray generation from an aluminium plasma produced by femtosecond Ti:Sapphire laser pulses

The influence of a prepulse on soft X-ray emission in the range of 50–200 from an aluminium plasma produced by 130 fs Ti: Sapphire laser pulses with an intensity of 10¹⁴ W/cm² at normal incidence is studied. An ultrashort prepulse with an intensity of 10¹³ W/cm² significantly enhances soft X-ray emission when there is a long time separation ( > 100 ps) between the prepulse and an intense main pulse. It is also observed for the first time that a prepulse with a short pulse time separation can slightly reduce soft X-ray emission, contrary to the previous work done using 248 nm laser pulses. This can be explained qualitatively in terms of the dependence of absorption on the length scale.     

Defects in pulsed laser and thermal processed ion implanted silicon

The evolution of the nature and concentration of the defects produced by 100 or 300 keV As ions at fluences 1 to 4×10^–12 cm^–2 inn-type, Fz Silicon doped with 10¹⁵ to 10¹⁶ cm^–3 has been studied as function of thermal treatments (in the range 500°–900 °C) and of the energy density (in the range 0.3–0.6 J cm^–2) of a light pulse from a ruby laser (15 ns, 0.69 m). Deep-level transient spectroscopy (DLTS) combined with capacitance — voltage (C-V) measurements were used to get the characteristics (energy level, crosssection for the capture of majority carriers) of the defects and theirs profiles. The difficulties encountered in the analysis of the results, due to the large compensation of free carriers in the implanted region and to the abrupt defect and free carrier profiles, are discussed in detail and the corrections to apply on the C-V characteristics and the DLTS spectra are described. The defects resulting from the two types of treatments are found to be essentially the same. Only, for laser energies higher than 0.5 J cm^–2, the laser treatment appears to introduced new defects (atE0.32 eV) which should result from a quenching process. The fact that a laser energy smaller than the threshold energy for melting and recrystallization is able to anneal, at least partially, the defects produced by the implantation, demonstrates that the annealing process induced by the laser pulse is not a purely thermal process but is enhanced by a mechanism involving ionization.     

Laser-induced free-carrier absorption in Si single crystal

The transmitted energy density in thin single Si crystal, wafers is measured at=1.06 m as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm². The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm² energy density range are fitted with an Auger constant of 10^–30 cm⁶s^–1.Work supported in part by M.P.I. and G.N.S.M.-C.N.R.     

Space- and time-resolved investigation of gain lines in Na-like copper

We report space- and time-resolved measurements of the gain coefficient for four gain lines in sodium-like copper. The lines investigated include the twon = 1 transitions 5g–4f and 5f–4d at 11.1 nm and 10.3nm and the twon = 2 transitions 6g–4f and 6f–4d at 7.2 nm, and 6.9 nm. The investigations were carried out for four irradiation intensities from 4 × 10¹² W/cm² to 3 × 10¹³ W/cm² using the Asterix IV high-power iodine laser at Garching (wavelength 1.315 µm, pulse duration 450 ps).The main results may be summarized as follows: On varying the laser intensity it was found that the highest values of the gain could be seen at an irradiation of 8 × 10¹² W/cm². For then = 1 lines the spatial maximum of the gain occurred at a distance of 300 µm from the target, and for then = 2 lines at 200 µm. The temporal gain maximum occurred at a time of 1.8 ns after the pulse maximum. The gain values range up to 2.6 cm^–1.Dedicated to the memory of the late Prof. Shi-shen Chen, who contributed to the early phase of this work     

Optical characterization of laser-induced crystallized silicon films

Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV 3 eV. However, the absorption coefficient was higher than 10² cm^–1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( > 10⁴ cm^–1) in the low photon energy range (1.1 eV 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 10²¹ cm³ and the carrier mobility of 20 cm²/Vs.     

Aluminium electron-phonon relaxation-time measurement from subpicosecond nonlinear single-photon photoelectric emission at 248 nm

The sensitivity of photoelectric emission of polycrystalline aluminium, produced by 248 nm laser pulses with p-polarization and 450 fs duration, under incidence angles = 74–86°, has been measured. A nonlinear increase of photoemission efficiency, as a function of the incident laser peak intensity in the range of 1–50 GW/cm², was displayed, which confirms earlier observations with gold and tungsten. This nonlinearity is consecutive to the non-thermal distribution of electron gas of laser-heated metal on the time scale of the electron-phonon relaxation time. Analysis of experimental data, using the model previously developed by us [1], gives a value of electron-phonon relaxation time 0.55 ± 0.11 ps.     

Diffusion of Al in ion-implanted Pd and Pt

The diffusion coefficients of aluminium have been measured in polycrystalline fcc Pd and Pt. The Al-implanted palladium and platinum samples were annealed at 400°–800 °C and 450°–900 °C, respectively. The aluminium profiles were probed using the nuclear resonance broadening (NRB) technique. Values of (1.41±0.09) and (1.38±0.09) eV for the activation energy and (1.5 _–1.0 ⁺⁵ )×10^–6 and (4 _–3 ⁺¹⁰ )×10^–7cm²/s for the frequency factor were obtained for Al in Pd and Pt, respectively. These anomalous results, compared to the normal impurity diffusion, were checked using also Al-evaporated samples.     

Spatially inhomogeneous carrier concentration dependence of the reflectivity of semiconductors

The excite-and-probe technique was used to study the optically induced charge carrier concentration dependence of the reflectivity of semiconductors, both experimentally and theoretically, in the case of an exponential carrier distribution. The second harmonic of an Nd : YAG laser (pulse duration 25 ps) was used as the exciting beam; the fundamental wave served as the probe beam. At a carrier concentration of about 2.5×10²¹ cm^–3 a minimum reflectivity was obtained if the angle of incidence was greater than 40°. For increasing absorption constants of the semiconductor at the exciting frequency, this minimum value of the reflectivity was shown to increase. The dependence of the reflectivity on the exponentially distributed carrier concentration was studied experimentally for thin amorphous silicon films produced by the glow-discharge technique. For an absorption constant of 6×10⁵ cm^–1 at 532 nm, good agreement was found between the numerical calculations and the experimental results.     

Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

An investigation was made into the electrical and photoelectric properties of gallium arsenide with an initial electron density 5×10¹⁵–4×10¹⁷ cm^–3 doped with Mn in different thermodynamic diffusion regimes characterized by diffusion temperatures of 900 and 1000°C and arsenic vapor pressure 10^–2 and 10^–3 atm. The ionization energy and defect concentration were determined by a computer analysis of the equilibrium hole density determined from the Hall effect. Centers with ionization energy 0.08–0.10 eV were found, their concentration varying from 2×10¹⁹ to 2×10²⁰ cm^–3 depending on the diffusion temperature and the doping level of the original crystals. Data obtained by investigating the stationary intrinsic photoconductivity were used to determine a hole lifetime of t_p 10^–9 sec. The photoconductivity spectra were investigated in the range 0.5–2 eV at 77°K, and defects with ionization energy E_v + 0.6 eV were found in all samples. The impurity photoconductivity at wavelength 10.6 m was investigated. It was shown that GaAsMn can be used as a material for impurity photoresistors.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 15–19, March, 1981.     

Femtosecond-pulse laser ablation of human corneas

A femtosecond pulse laser in the visible spectral region shows promise as a potentially new powerful corneal sculpting tool. It combines the clinical and technical advantages of visible wavelengths with the high ablation quality observed with nanosecond-pulse excimer lasers at 193 nm. A femtosecond and a nanosecond dye laser with pulse durations of 300 fs and 7 ns, and centre wavelengths at 615 nm and 600 nm, respectively, both focused to an area of the order of 10^–5 cm², have been applied to human corneal ablation. Nanosecond laser pulses caused substantial tissue disruption within a 30–100 m range from the excision edge at all fluences above the ablation threshold of F _th60 J cm^–2 (I _th9 GW cm^–2). Completely different excisions are produced by the femtosecond-pulse laser: high quality ablations of the Bowman membrane and the stroma tissue characterised by damage zones of less than 0.5 m were observed at all fluences above ablation threshold of F _th1 J cm^–2 or I _th3 TW cm^–2 (3×10¹² W cm^–2). The transparent cornea material can be forced to absorb ultrashort pulses of extremely high intensity. The fs laser generates its own absorption by a multiphoton absorption process.     

Use of infrared absorption spectra for studying the conformational equilibrium of cis-1-methyl-2-ethylcyclohexane

The equilibrium of the three most stable conformations of cis-1-methyl-2-ethylcyclohexane has been examined on the basis of changes in intensity of the triplet at 585–610 cm^–1 in its infrared absorption spectrum on changing the temperature from 30° to –140° C. H and S have been determined.     

Collective dissociative desorption of water molecules from glass produced by IFP-2000 flash tubes

When the radiation from an IFP-2000 lamp interacts with the surface crazed layer of glass, there is a weak spectral absorption not only in the vacuum ultraviolet but also in the range 420 > > 290 nm. The adsorbed H₂O molecules are desorbed mainly by the dissociation, for the concentration of molecular hydrogen in the products is 80–84%. At intensities E600 W/cm² and E4600 W/ cm², in accordance with the working conditions, the desorption becomes collective. The rate of integral photon absorption then attains 10¹⁹ photons/cm²·sec. The transition to collective desorption in the first case (at relatively low intensity) is due to the production of a plasma in the material as a result of a sliding discharge struck at the surface of the glass.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 48–51, April, 1981.     

Collisional excitation X-ray laser experiments in plasmas produced by 0.53-μm and 0.35-μm laser light

Recent Ne- and Ni-like X-ray laser experiments carried out at the Centre d'Etudes de Limeil-Valenton (CEL-V) are reviewed. A variety of experiments in Ne-like X-ray lasers were performed; here we discuss measurements of soft X-ray amplification in Ge (Z=32) and Sr (Z=38) plasmas. In Ge plasmas produced by 0.53-m laser light at an irradiance of 6.0×10¹³ W/cm², gains between 2.2–2.5 cm^–1 on the 232.2 and 236.2 Å J=2–1 lines and a gain of 1.0 cm^–1 on the 196.1 Å J=0–1 line were measured. In addition, gains of 4.4 cm^–1 and 4.0 cm^–1 have been demonstrated on the J=2–1 transitions at 164.1 and 166.5 Å in Nelike Sr at laser intensities of 1.3×10¹⁴ W/cm². The effects of pumping the Ne-like Se X-ray laser with 0.35-m laser light have also been investigated; the Se lasing spectra is similar to that obtained with 0.53-m light. Experiments have also been carried out to optimize the gain of the 50.3 Å Ni-like Yb (Z=70) J=0–1 line. For Yb, no significant increase in gain over that previously reported was seen, but the time history of the Ni-like Yb X-ray laser was measured for the first time. Finally, attempts to extrapolate the Ni-like results to shorter wavelength were made using Ta (Z=73), W (Z=74), and Re (Z=75). No definitive observation of the Ni-like J=0–1 lasing lines was made in these experiments.     

Processing of W/Si and Si/W bilayers and multilayers with single and multiple excimer-laser pulses

Interdiffusion phenomena, thermal damage and ablation of W/Si and Si/W bilayers and multilayers under XeCl-excimer laser (=308 nm) irradiation at fluences of 0.15, 0.3 and 0.6 J/cm² were studied. Samples were prepared by UHV e-beam evaporation onto oxidized Si. The thickness of W and Si layers and the total thickness of the structures were 1–20 nm and 40–100 nm, respectively. 1 to 300 laser pulses were directed to the same irradiation site. At 0.6 J/cm² the samples were damaged even by a single laser pulse. At 0.3 J/cm² WSi₂ silicide formation, surface roughening and ablation were observed. The threshold for significant changes depends on the number of pulses: it was between 3–10 pulses and 10–30 pulses for bilayers with W and Si surfaces, respectively, and more than 100 pulses for multilayers with the same total thickness of tungsten. At 0.15 J/cm² the periodicity of the multilayers was preserved. Temperature profiles in layered structures were obtained by numerical simulations. The observed differences of the resistance of various bilayers and multilayers against UV irradiation are discussed.     

Electrical characteristics of the rf-excited oxygen plasma-cathodization-grown SiO2/Si interface

The electrical properties of the SiO₂/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated usingC-V and DLTS methods. Interface traps with high density in the range of 10¹² eV^–1 cm^–2 and a capture cross section as large as 10^–18 cm² were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400°C for 30 min in dry N₂ atmosphere, their densities and capture cross sections were reduced to the range of 1–2 × 10¹¹ eV^–1 cm^–2 and 10^–19 cm^–2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique.     

Saturation of ionization edge absorption by donors in germanium

A study of saturation of the absorption and photoconductivity of Sb and P donors in Ge for radiation of 90 m wavelength, i.e., of energy very closely above their ionization edges is presented at T=9.3 K. Under these conditions negligible heating by the excess radiation energy is expected, which provides a convenient opportunity to study the kinetics of photoionization and recombination. From these measurements we have determined the donor capture cross section of electrons at 9.3 K to be _c=(1.2±0.7)×10^–12cm^–2, and the relaxation time from the 2s to the ground state as ₂₁=(5.8±1.0)×10^–10s. The saturation intensity of the absorption coefficient is around three orders of magnitude higher than the saturation intensity of the photoconductivity. We explain the nonlinear photoconductivity by the Debye-Conwell dependence of the mobility on the number of photoionized donors and compensating acceptors.     

Interaction of microwaves with atmospheric pressure plasmas

In this paper, the interaction of microwaves with a plasma, generated at atmospheric pressure, is studied. The refractive index, attenuation index, skin depth, attenuation coefficient, phase coefficient, and reflectivity are investigated as functions of the plasma number density, the wave frequency and type of polarization, and the grazing angle. It is found that two frequency regimes characterize these type of plasmas. The first is a range where the phase velocity and attenuation of the wave both increase with frequency. The second is a frequency range in which the phase velocity and attenuation of the wave remain constant. It is also found that to have a shallow skin depth, the plasma number density has to be in the 10¹³ cm^–3 range. The reflectivity is found to be an increasing function of the number density. In horizontal polarization, the reflectivity is a decreasing function of the grazing angle. But in vertical polarization and for grazing angle less than 20°, the reflectivity has a maximum at a frequency , where f_pe is the electron plasma frequency and v is the collision frequency.     

Micro-Raman spectroscopy in polycrystalline CuInSe2 formation

The crystalline formation of CuInSe₂ thin films has been investigated using micro-Raman spectroscopy and AES composition analysis. It is confirmed that the Raman peaks are stongly dependent on the surface morphology and the Cu:In:Se ratio. In the films annealed at 315°C, crystalline grains larger than 2 m show Raman peaks at 174 cm^–1 and 258 cm^–1. The In content is very low and the Cu:Se ratio is about 1:1 in these grains. The low In concentration is thought to be due to the formation of In₂O₃ on the surface. On the other hand, random structures of 1–2 m grains found in films annealed at temperatures below 305°C show peaks at 174 cm^–1 and 186 cm^–1 instead of 258 cm^–1 and have a Cu:In:Se ratio of 1:1:3–4. Thus the 186 cm^–1 peak is thought to be related to a Cu, In-deficient phase when compared to stoichiometric CuInSe₂. The optimum annealing condition was found by analyzing the Raman spectra and composition of different crystalline CuInSe₂ grains. Films annealed under this condition exhibited a clear Raman peak at 174 cm^–1 and consisted of clusters of crystals less than 1 m in size.     

Low-Temperature Midinfrared Absorption in GaSe

We report the measurement of the temperature dependence of the absorption spectra of - GaSe over the temperature range 300 K to 5 K. Measurements have been made for both the e-ray (polarized parallel to the crystals c-axis) and the o-ray (polarized perpendicular to the c-axis), over the spectral range 4000 to 10 cm^–1. Nine absorption lines at 417, 440, 499, 546, 891, 945, 1015, 1093, 1270 cm^–1 were recorded at 300 K for the e- ray spectra. Some of these lines were identified using the results of a modified single layer, linear chain model of GaSe. The lines at 417, 440 and 499 cm^–1 were assigned to local impurity absorption originating from N, Mg and O, respectively. The weak lines at 945, 1015 and 1093 cm^–1 were assigned to hole transitions from the acceptor levels to the top of the valence band. Two absorption lines at 891 cm^–1 and 1270 cm^–1 were assigned to hole transitions from the quasi-local acceptor levels to the double degenerate valence sub-bands ₅ or ₆. The origin of lines recorded in the far IR absorption spectra at 20, 37 cm^–1 and 362 cm^–1 were also identified.     

Electrophysical properties of ionic alloys of GaAs obtained by implanting Zn+ (150 keV) with subsequent annealing at 500–1000°C

A study is made of the electrophysical properties (N_s, _eff) of ionic alloys of GaAs obtained by implanting 150-keV Zn ions at 20 and 300°C. The ion dose D=5·10¹³–10¹⁶ ions/cm²; the alloys were subsequently annealed for 10 min in an H₂ atmosphere with temperatures in the range 500–1000°C. The optimal parameters of the ionic alloys are obtained for T_i=300°C and T_a=700°C. Thermal acceptance of the GaAs under a SiO₂ film (d0.2–0.3 m) is observed for T_a>700°C. The limiting concentration of thermal acceptors N_s(TA)3·10¹³ cm^–2) for T=1000°C and t=10 min.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 22–26, March, 1979.