Observation of a shift of the mobility threshold in the D − band of silicon in an electric field according to the photoconductivity spectra

We have discovered that the extrinsic photoconductivity spectrum of doped, uncompensated crystalline Si at liquid-helium temperatures is qualitatively different in electric fields E above a critical value E _c . Specifically, the red edge of the photoconductivity, associated with photoionization of a neutral impurity, is shifted strongly to lower frequencies. This result is explained by the appearance of a mobility threshold in the D ⁻-band (upper Hubbard band) and the shift of this threshold as E increases. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 2, 89–94 (25 January 1996)     

Nature of conduction via impurities in uncompensated silicon

The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=10¹⁶−6×10¹⁶ cm⁻³, ionization energy ε₁≃45 meV) with compensation K=10⁻⁴−10⁻⁵ in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω>16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D ⁻ band, which is filled with carriers under the influence of the field E. In fields E<E _q (E _q ≃100–200 V/cm) the carrier motion consists of hops along localized D ⁻ states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε₁); for E>E _q carriers drift along localized D ⁻ states with energy ε∞ε₁−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 232–236 (25 August 1997)     

Appearance of a band of delocalized D − states in uncompensated silicon in an electric field

The impurity photoconductivity spectra of uncompensated silicon at liquid-helium temperatures under conditions of strongly suppressed background radiation (background) are studied in different electric fields E. It is established that the delocalization arising in the D ⁻ band as E increases is not associated with any changes of the fluctuation potential and is due to the direct action of the field E. A delocalization band of finite width appears abruptly at a critical value E _c (∼100 V/cm) of E. The critical field E _c increases with the density of charged centers in the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 1, 56–59 (10 January 1997)     

Quasi-long-range order in the random anisotropy Heisenberg model

The random field and random anisotropy N-vector models are studied with the functional renormalization group in 4−ε dimensions. The random anisotropy Heisenberg (N=3) model has a phase with an infinite correlation length at low temperatures and weak disorder. The correlation function of the magnetization obeys a power law 〈m(r ₁)m(r ₂)〉∼|r ₁−r ₂|^{− 0.62ε}. The magnetic susceptibility diverges at low fields as χ∼H ^−1+0.15ε. In the random field N-vector model the correlation length is finite at arbitrarily weak disorder for any N>3. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 2, 130–135 (25 July 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Shallow acceptors in Ge/GeSi strained multilayer heterostructures with quantum wells

The impurity photoconductivity spectra of Ge/Ge_1−x Si_x strained heterostructures with quantum wells are investigated. It is established that the built-in deformation in quantum-size Ge layers substantially changes the spectrum of shallow acceptors, shifting it into the long-wavelength region of the far-IR range. In strong magnetic fields the photoconductivity lines are observed to split and shift as a function of the field. This makes it possible to carry out a classification of the transitions. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 2, 194–198 (25 January 1997)     

Quantum beats in excitons in Cu2O

A theoretical study is carried out of quantum beats (QB) in the time-dependent intensities of absorption of a test pulse and of spontaneous luminescence in a Cu₂O crystal under conditions of double optical resonance. It is assumed that pumping is effected by a CO₂-laser pulse which dynamically couples the exciton levels 1s(Γ ₅ ⁺ ) and 2p(Γ ₄ ⁻ ,Γ ₅ ⁻ ,Γ ₃ ⁻ Γ ₂ ⁻ ) and splits them into two or three pairs of quasi-energy levels. The frequency of the test pulse is in resonance with the frequency Γ ₅ ⁺ of the exciton. The corresponding intensities for various directions of the electric vector of the pump field E _L, the polarization vector ξ, and the wave vector q of the test pulse are obtained. The frequency of the quantum beats is twice the Rabi frequency, which for different values of E _L, ξ and q contains different sets of matrix elements of the dipole transitions between the levels 1s(Γ ₅ ⁺ ) and 2p(Γ ₄ ⁻ ,Γ ₅ ⁻ ,Γ ₃ ⁻ Γ ₂ ⁻ ). Thus, by measuring the period of the quantum beats it is possible to determine the unknown matrix elements of the indicated transitions. Fiz. Tverd. Tela (St. Petersburg) 39, 844–847 (May 1997)     

Kinetics of the photoconductivity and absorption in the D −(A +) bands in doped silicon

The photoconductivity (PC) spectra and the induced absorption of background radiation in the energy range 10–40 meV are investigated in weakly compensated B-, Ga-, and As-doped silicon at 4.2 K. It is shown that dips corresponding to the photoionization of long-lived excited states of B and As are observed in the PC spectra on the D ⁻(A ⁺) bands. It is found that the frequency dependence of the PC spectra corresponds to excitation relaxation times of the order of 10⁻⁴ s for the states in the D ⁻ (A ⁺) bands. It is established that in electric fields E>100 V/cm the PC decreases sharply, while the induced absorption of the background radiation changes very little. This confirms the conclusion that the excitation of the D ⁻ (A ⁺) itself makes the main contribution to the PC. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 224–227 (25 August 1997)     

Crystal growth,electrical and photophysical properties of Tl<Subscript>2</Subscript>S layered single crystals

The Tl₂S compound was prepared in a single crystal form using a special local technique, and the obtained crystals were analysed by X-ray diffraction. For the resultant crystals, the electrical properties (electrical conductivity and Hall effect) and steady-state photoconductivity were elucidated in this work. The electrical measurements extend from 170 to 430 K, where it was found that σ _⊥ = 8.82 × 10⁻⁵ Sm⁻¹ when current flow direction makes right angle to the cleavage plane of the crystals. In the same range of temperatures, it was found that σ _‖ = 4.73 × 10⁻⁵ Sm⁻¹ when the current flow is parallel to the cleavage plane. In line with the investigated range of temperatures, the widths of the band gaps were calculated and discussed as also the results of the electrical conductivity and Hall effect measurements. In addition, the anisotropy of the electrical conductivity (σ _⊥/σ _‖) for the obtained crystals was also studied in this work. Finally the photosensitivity was calculated for different levels of illumination as a result of the photoconductivity measurements, which showed that the recombination process in Tl₂S single crystals is a monomolecular process.      

Magnetically induced spatial dispersion in the cubic magnetic semiconductors Cd1−x MnxTe

In the transverse geometry we have detected birefringence that is linear in the magnetic field B and the light wave vector k in the cubic magnetic semiconductors Cd_1−x Mn_xTe (0⩽x⩽0.52). The effect was found to be large, ∼1 (deg cm⁻¹ T⁻¹), and highly anisotropic, in contrast to the Faraday and Voigt effects. The phenomenon is represented by terms of type γ _ijklB_kk_l in the permittivity tensor ε _ij and can be described by two parameters, A and g. Spectral studies have shown that the normalized parameters A/x and g/x are independent of x, i.e., the effect can be related to the Mn²⁺ ions. Below the edge E _g of the forbidden band, the dispersion of A is described by a (E _g−E)^−1.4-dependence, while the dispersion of g is nil. Theoretical analysis has shown that the spectral curves for A and g can be explained by the special features of the dispersion laws for electrons and holes (features related to the fact that there is no inversion center) and by the dependence of the parameters of the exchange interaction on the electron wave vector. Zh. éksp. Teor. Fiz. 114, 1018–1033 (September 1998)     

Muons in type-II superconductors: μ+ diffusion in ultra-pure niobiumdiffusion in ultra-pure niobium

The diffusivityD _μ of positive muons (μ⁺) in the mixed state of superconducting high-purity, high-perfection niobium single crystals is investigated by measurements of the relaxation of the transverse muon spin polarization (μ⁺SR). The method makes use of the strong magnetic field gradients existing in the mixed state of Type-II superconductors and monitorsD _μ through the variation of the magnetic field felt by the μ⁺ during their diffusion through the crystals. For μ⁺ near the centres of the flux lines inNb it givesD _μ(4.6 K)=(8±2)·10⁻¹¹m²S⁻¹. The positive temperature coefficient ofD _μ indicates that at liquid-helium temperatures the diffusivity of μ⁺ inNb is mainly due to phonon-assisted tunnelling processes.     

Critical behavior of a degenerate ferromagnet in a uniaxial random field: Exact results in a space of arbitrary dimension

The critical behavior of the transverse (with respect to the field) magnetization component in classical degenerate magnets with only nearest-neighbors interaction in a uniaxial random magnetic field at zero temperature is found exactly. For a Gaussian distribution of the random field the asymptotic transverse magnetization in strong fields does not depend on the dimension of the space and is of the form m _⊥ ∝ 1nh ₀/h ₀ ² , where h ₀ is the width of the distribution. For a bimodal distribution, where only the field direction is random and the amplitude is fixed, the transverse magnetization behaves as m _⊥∝exp(−const/(H _c −H) ^D/2), where H is the amplitude of the random field, D is the dimension of the space, and H _c is the critical field. Zh. éksp. Teor. Fiz. 115, 2143–2159 (June 1999)     

Dispersion of the Voigt effect in the magnetic semiconductors Cd1−x MnxTe

Spectral measurements of the Voigt birefringence Δn were performed for the cubic magnetic semiconductor Cd_1−x Mn _x Te (0≤x≤0.52) in order to investigate how the exchange interaction of Mn²⁺ ions with itinerant electrons depends on the electron wave vector. It was determined that Δn/x ² is independent of x and the magnetic field direction, i.e., the effect is due to the Mn²⁺ ions and is isotropic. Below the band gap edge the dispersion of the birefringence Δn can be described well in all samples by the unusual dependence Δn∼(E _g −ℏω) ^−3.5. This can be explained by a decrease of the exchange interaction of Mn²⁺ ions with itinerant electrons with increasing distance from the center of the Brillouin zone. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 8, 569–573 (25 April 1998)     

Quenching of photoconductivity by a strong electric field in tin δ-doped GaAs structures

The conductivity of GaAs structures δ-doped with tin on the vicinal and singular faces was investigated in strong electric fields up to E=10⁴ V/cm and temperatures in the range 4.2 K <T<300 K. The measurements were performed in the dark and under illumination with visible light. Long-time photoconductivity of 2D electrons with threshold T _c ≈240 K was observed in samples which were δ-doped with tin on the vicinal face. A strong electric field not only quenches photoconductivity, but also increases the resistance of the structures at temperatures T<T _c by several orders of magnitude with respect to the dark resistance. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 5, 326–330 (10 March 1996)     

Field dependence of spin-lattice relaxation of Nd3+ ions in Y3Al5O12 crystals

Our studies involve measuring spin-lattice relaxation times for Nd³⁺ ions in yttrium-aluminum garnets over the temperature range 4–50 K at 9.25 and 36.4 GHz for different orientations of the external magnetic field in relation to the crystallographic axes. The temperature dependence of the relaxation rate is described by T ₁ ⁻¹ =AT ⁿ+b exp(−Δ/kT), where n varies from sample to sample, with n=1 for “perfect” samples (i.e., with the longest relaxation times). Here Δ is approximately 130 cm⁻¹, which is the energy of the excited Kramers doublet of the neodymium ion closest to the ground state, and this makes it possible to interpret the second term in T ₁ ⁻¹ as the contribution of two-stage relaxation proceeding through the intermediate level Δ. A strong field dependence of these processes has been discovered: when the frequency was increased fourfold, the relaxation rate increased by a factor of 10. The effect is a specific manifestation of the degeneracy of the excited level, breaking of the symmetry of the crystalline field due to lattice defects, and the prevalence of deformations of a certain type in the spin-lattice interaction. Zh. éksp. Teor. Fiz. 111, 332–343 (January 1997)     

Magnetically stabilized electron-hole liquid in indium antimonide

Luminescence spectra of sufficiently pure n-type indium antimonide crystals (N _D−N _A=(1–22)·10¹⁴ cm⁻³) in a magnetic field of up to 56 kOe, at temperatures of 1.8–2 K, and high optical pumping densities (more than 100 W/cm²) have been studied. More evidence of the existence of electron-hole liquid stabilized by magnetic field has been obtained, and its basic thermodynamic parameters as functions of magnetic field have been measured. When the magnetic field increases from 23 to 55.2 kOe, the liquid density increases from 3.2·10¹⁵ to 6.7·10¹⁵ cm⁻³, the binding energy per electron-hole pair rises from 3.0 to 5.2 meV, and the binding energy with respect to the ground exciton level (work function of an exciton in the liquid) rises from 0.43 to 1.2 meV. Zh. éksp. Teor. Fiz. 111, 737–758 (February 1997)     

Observation of Meyer-Neldel rule in thermally activated Poole-Frenkel photoconduction in a-Se<Subscript>70</Subscript>Te<Subscript>30−<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript> thin films

In the present paper, we report the compensation effect on photoconductivity of thin films of Se₇₀Te_30−x Cd _x (x = 2, 4, 6) alloys for high field conduction. Steady state photoconductivity measurements have been made in thin films for different electric fields. The photoconduction was found to be ohmic at low fields and Poole-Frenkel type at high fields. Meyer-Neldel rule (MN rule) for the pre-exponential factor (σ _ph)₀ and activation energy (ΔE _ph) of photoconduction in thin films of Se₇₀Te_30−x Cd _x is observed in the present study.     

Characteristics of photoconductivity in As-Sb-Se glasses

Characteristic features of photoconductivity in As _x Sb₁₅Se_85−x and As_xSb₁₀Se_90−x bulk glass systems have been measured and reported. Both a.c and d.c techniques have been employed for the measurements. The temperature dependence of photoconductivity has been analysed in terms of the ABFH model and both systems are found to exhibit type I photoconductivity. Photoconductivity shows a clear change in slope corresponding to the stoichiometric composition in both the systems. The composition dependence of photoconductivity is explained on the basis of chemically ordered covalent network (COCN) model. Photoconductivity response time of the two systems have been determined from frequency-resolved photocurrent (FRPC) measurements. Variation of response time with composition exhibits a clear change in slope at the stoichiometric composition in both the systems.     

Investigation of the effect of uniaxial pressure on antiferromagnetic resonance in KFe11O17 Crystals

The deformation dependence of the resonance field in KFe₁₁O₁₇ single crystals was investigated by the AFMR method. The measurements were performed at T=77 K and ν=47.52 GHz for two orientations of the external pressure. The experimental data are discussed in terms of a model of a very simple easy-plane antiferromagnet taking account of the elastic and magnetoelastic contributions to the thermodynamic potential. The magnetostriction, magnetoelastic, and elastic contants are calculated and the results are λ=1.94×10⁻⁵, B ₁=2.75×10⁸ erg/cm³, and C ₁₁−C ₁₂=1.42×10¹³ erg/cm³, respectively. The alues of these constants imply that the origin of the initial gap in the AFMR spectrum is not of magnetoelastic origin. Fiz. Tverd. Tela (St. Petersburg) 40, 513–515 (March 1998)     

Radio-frequency absorption study of the parameters of high-T c materials irradiated with fast reactor neutrons

The magnetic properties of YBa₂Cu₃O_7−x ceramics of various densities and Bi₂Sr₂CaCu₂O₈ quasicrystals irradiated with neutrons at fluences of 10¹⁶–10¹⁹ cm⁻² are investigated by a radio-frequency method (in the frequency range f=100–150 MHz). The electromagnetic absorption is used to estimate the parameters of a Josephson medium: the lower critical field, the critical current density, the grain size and intergranular distances, and the penetration depth of the magnetic field in the sample. The hysteresis of electromagnetic absorption in the indicated superconductors is investigated; the hysteresis effect can be used to obtain data on flux pinning processes and flux creep dynamics. It is shown that an increase in the critical current density is observed as a result of the injection of radiation-induced pinning centers. Fiz. Tverd. Tela (St. Petersburg) 39, 28–34 (January 1997)     

Negative muon spin precession in ferromagnetic iron and the hyperfine anomaly

The hyperfine field (B _μ ^hf ) at the negative muon μ⁻ in ferromagnetic iron was investigated by means of the zero-field μ⁻ spin precession technique. In the temperature range 320–690 K,B _μ ^hf for μ⁻ Fe departs from the magnetization curve of pure iron in the same way as the hyperfine field seen by a⁵⁵Mn impurity in dilute MnFe measured by NMR. The hyperfine anomaly for μ⁻ Fe relative to dilute (1.5 at.%)⁵⁵Mn in iron is found to be −0.9(3)% and temperature independent over the temperature range investigated.