Effect of humidity on subcritical crack growth of indentation crack under sustained electric field in PZT ceramics

The effect of humidity on subcritical crack growth of indentation crack in lead zirconate titanate (PZT) ferroelectric ceramics under various sustained electric field has been investigated. The results showed that subcritical crack growth of indentation crack could occur in humid air of 60%RH without electric field but did not in air with RH ≤ 30%. The subcritical crack growth could occur in vacuum under a sustained electric field of E/E_C = 0.14. The incubation time decreased and the amount of the subcritical crack growth increased with increasing the humidity under the sustained field. The threshold electric field for subcritical crack growth decreased with increasing the humidity.     

Electrical properties of bulk and grain boundaries of scandia-stabilized zirconia co-doped with yttria and ceria

The electrical properties of bulk and grain boundaries of scandia-stabilized zirconia co-doped with yttria and ceria have been determined as a function of temperature (300 < T/°C < 700) and oxygen partial pressure [10^− 24 ≤ p(O₂)/bar ≤ 1, T = 700 °C] by application of impedance spectroscopy. The yttria and ceria contents of Ce_xY_0.2 − xSc_0.6Zr_3.2O_8 − δ (0 ≤ x ≤ 0.2) have been varied systematically. Homogeneous samples have been prepared by means of a sol-gel (glycine-nitrate) combustion process. The ionic conductivity in air is almost independent of composition with typical values around 0.03-0.04 S cm^− 1 for the bulk at 700 °C. A significant decrease of the ionic conductivities of bulk and grain boundaries is found for samples co-doped with ceria at low oxygen partial pressures [p(O₂) < 10^− 15 bar, T = 700 °C]. Activation energies for the ionic transport in oxidizing (air) and reducing (1%-H₂/Ar) atmospheres have been extracted from Arrhenius-plots. The oxygen nonstoichiometry in 1%-H₂/Ar has been investigated by employing thermogravimetry. The decrease of the ionic conductivity under reducing conditions is accompanied by an increase of the corresponding high temperature activation energy of the bulk, which is interpreted in terms of defect association or clustering.     

Effects of co-substitution on the electrical properties of BiFeO3 thin films prepared by chemical solution deposition

Ferroelectric BiFeO₃ thin films with Nd-Cr (or Sm-Cr) co-substitution (denoted by BNdFCr and BSmFCr, respectively) were deposited on the Pt(2 0 0)/TiO₂/SiO₂/Si(1 0 0) substrates by a chemical solution deposition method. X-ray diffraction patterns revealed the formation of BNdFCr and BSmFCr thin films without any secondary phases. The co-substituted BNdFCr (or BSmFCr) thin films, which were annealed at 550 °C for 30 min in N₂ atmosphere, exhibited enhanced electrical properties compared to BFO thin films with the remanent polarization (2P_r) and coercive electric field (2E_c) of 196, 188 μC/cm² and 600, 570 kV/cm with the electric field of 800 kV/cm, respectively. The leakage current densities of BNdFCr and BSmFCr thin films measured at room temperature were approximately three orders of magnitude lower than that of BFO thin film, and the leakage current at room temperature of the thin films exhibited three distinctive conduction behaviors. Furthermore, the values of pulse polarizations [i.e., +(P*-P^{^}) or −(P*-P^{^})] of BNdFCr and BSmFCr thin films were reasonably unchanged up to 1.4 × 10¹⁰ switching cycles.     

Microwave synthesis of YAG:Eu by sol-gel methodology

Yttrium-aluminum oxides are interesting compounds and they have been extensively used as host for lasers and phosphors, due to their stable physical and chemical properties. The fabrication of yttrium-aluminum garnet (YAG) has been investigated thoroughly. Single-crystal YAG is expensive and to produce it a new way has been investigated. This process consists of modifying the methodology of reagents mixture and the process of heating them. The microwave irradiation is used to heat-treat the oxide mixture. The traditional synthesis of YAG powders occurs through the reaction of aluminum and yttrium powders at high temperatures. With this work we investigated the preparation of YAG by non-hydrolytic sol-gel route as an alternative methodology to obtain yttrium-aluminum matrix from inorganic precursors (yttrium and aluminum chloride). The preparation of the gel was carried out in an oven-dried glassware. The AlCl₃, YCl₃ and ethanol were reacted in reflux under argon atmosphere. Europium III chloride was added as a structural probe. The powder was dried and heat-treated in modified microwaves. The samples were pre-treated at 50 and 800^oC during 1 h and then heated in microwaves for 30 s, 2 and 4 min. The formation process and structure of the powders were studied by means of X-ray diffraction (XRD), photoluminescence (PL) and transmission electronic microscopy (TEM). XRD presents only picks corresponding to the YAG phase and confirmed by TEM. PL date showed that the YAG phase was formed in 2 min with the samples pre-treated at 50 °C. For the samples pre-treated at 800 °C, the YAG phase appears in 30 s. The excitation spectra present a maximum of 394 nm corresponding to the ⁵L₆ level and emission spectra of Eu III ion present bands characteristic transitions arising from the ⁵D₀→⁷F_J (J=1, 2, 3, 4) monifolds excited at their maximum. The magnetic dipole ⁵D₀→⁷F₁ transition presents more intensity than the electric dipole ⁵D₀→⁷F₂ transition. This methodology showed efficiency in obtaining YAG phase.     

Thermal annealing effect on the crystallization and optical dispersion of sprayed V2O5 thin films

Polycrystalline vanadium pentoxide (V₂O₅) thin films have been deposited by spray pyrolysis technique on preheated glass substrate. The influence of thermal annealing on the crystallization of V₂O₅ has been investigated. X-ray diffraction analysis (XRD) revealed that the films deposited at T_sub=350 °C were orthorhombic structures with a preferential orientation along 〈0 0 1〉 direction. Moreover, the degree of crystallinity was improved by thermal annealing. Optical properties of these samples were studied by spectrophotometer in the wavelength range 300-2500 nm. Some of the important optical absorptions such as optical dispersion energies E_o and E_d, dielectric constant ε, ratio between number of charge carriers and effective mass N/m^*, wavelength of single oscillator λ₀, plasma frequency ω_p, single resonant frequency ω₀ and the average of oscillator strength S_o, have been evaluated. In the annealing process, the dielectric properties have weak dependencies of film thickness and annealing time. Furthermore, a value of carrier concentration was obtained of 3.02×10²⁵ m⁻³ for the as-deposited film and slight changes with annealing time.     

Preparation and multi-properties of insulated single-phase BiFeO3 ceramics

Six types of BiFeO₃ ceramic samples, with subtle differences in synthesis conditions, were prepared. The comparison of their phases, electrical resistivity, and porosity revealed that the use of Bi₂O₃ and Fe₂O₃ powders of <1 μm size and a rapid liquid-phase sintering process of 855 °C for 5 min at 100 °C/s is beneficial to synthesize poreless single-phase BiFeO₃ samples with high electrical resistivity of ∼5×10¹² Ω cm. Deoxygenated Bi_xFe_yO_{1.5x+1.5y−δ} (x≠y, δ≥0) impurities were identified and found to be the main cause of low electrical resistivity and high porosity in the multi-phase samples. Large saturation polarization of 16.6 μC/cm² and low leakage current density of 30 mA/m², both at a high electric field of 145 kV/cm, were measured in the optimized single-phase samples at room temperature besides a large piezoelectric d₃₃ coefficient of 27 pC/N and an obvious canted antiferromagnetic behavior.     

Silicon carbonitride by remote microwave plasma CVD from organosilicon precursor: Growth mechanism and structure of resulting Si:C:N films

The remote microwave hydrogen plasma chemical vapor deposition (RP-CVD) from bis(dimethylamino)methylsilane precursor was used for the synthesis of silicon carbonitride (Si:C:N) films. The effect of thermal activation on the RP-CVD process was examined by determining the mass- and the thickness-based film growth rate and film growth yield, at different substrate temperature (T_S). It was found that the mechanism of the process depends on T_S and for low substrate temperature regime, 30 °C ≤ T_S ≤ 100 °C, RP-CVD is limited by desorption of film-forming precursors, whereas for high substrate temperature regime, 100 °C < T_S ≤ 400 °C, RP-CVD is a non-thermally activated and mass-transport limited process. The Si:C:N films were characterized by X-ray photoelectron and Fourier transform infrared spectroscopies, as well as by atomic force microscopy. The increase of T_S enhances crosslinking in the film via the formation of nitridic Si-N and carbidic Si-C bonds. On the basis of the structural data a hypothetical crsosslinking reactions contributing to silicon carbonitride network formation have been proposed.     

Atomic vibrational dynamics of amorphous Fe-Mg alloy thin films

The atomic vibrational dynamics of ⁵⁷Fe in 800-Å thick amorphous Fe_xMg_1−x alloy thin films (0.3≤x≤0.7) has been investigated at room temperature by nuclear resonant inelastic X-ray scattering (NRIXS) of 14.4125 keV synchrotron radiation. The amorphous phase has been successfully stabilized by codeposition of Fe and Mg in ultrahigh vacuum onto a substrate held at −140 °C during deposition. The amorphous structure of the samples was confirmed by X-ray diffraction and conversion electron Mössbauer spectroscopy. The ⁵⁷Fe-projected partial vibrational density of states, g(E), has been obtained from the measured NRIXS vibrational excitation probability, together with thermodynamic quantities such as the probability of recoilless absorption (f-factor), the average kinetic energy per Fe atom, the average force constant, and the vibrational entropy per Fe atom. A plot of g(E)/E² versus E proves the existence of non-Debye-like vibrational excitations with a peak at E_bp∼3-5 meV (boson peak). Both the boson peak height and E_bp were found to depend linearly on the composition x. Above the boson peak, g(E)/E² exhibits an exponential decrease.     

Influence of preparation conditions on the dispersion parameters of sprayed iron oxide thin films

Iron oxide thin films were prepared by spray pyrolysis technique (SPT) at various substrate temperatures (T_sub) and different deposition time. X-ray diffraction (XRD) analysis showed that, at T_sub ≥ 350 °C, a single phase of α-Fe₂O₃ film is formed which has the rhombohedral structure. Moreover, the crystallinity was improved by increasing T_sub. The effect of T_sub as well as deposition time on the optical dispersion of these films has been investigated. The optical transmittance and reflectance measurements were performed by using spectrophotometer in the wavelength range from 300 to 2500 nm. The refractive index was determined by using Murmann's exact equation. It was observed that, the refractive index increased with increasing in both the T_sub and film thickness. The optical dispersion parameters have been evaluated and analyzed by using Wemple-Didomenico equation. The obtained results showed that, the dielectric properties have weak dependencies of growth temperature and film thickness. At T_sub ≥ 350 °C, the average values of oscillator energy, E_o and dispersion energy, E_d were found to be 5.96 and 34.08 eV. While at different thickness, the average values of dispersion energies were found to be 3.93 and 17.08 eV. Also, the average values of oscillator strength S_o and single resonant frequency ω_o were estimated 10.78 × 10¹³ m⁻² and 5.99 × 10¹⁵ Hz, while at different thickness were evaluating 4.81 × 10¹³ m⁻² and 6.11 × 10¹⁵ Hz. Furthermore, the optical parameters such as wavelength of single oscillator λ_o, plasma frequency ω_p, and dielectric constant ? have been evaluated. The carrier concentration N_opt by using Drud's theory was obtained the range of 5.07 × 10²⁵ m⁻³ to 1.04 × 10²⁶ m⁻³.     

The sodium diffusion in aluminium-oxide

The transport of Na through the polycrystalline ceramic arc tube of high intensity discharge lamps has been investigated. This complex process consists of several steps: solution in the ceramics, diffusion through the ceramics, leaving the bulk phase, evaporation from the surface. Among the listed processes the kinetics of the diffusion was examined in the temperature range 400-1200 °C, separately from other disturbing effects. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) were used to determine the concentration depth profiles. The obtained results confirmed that the grain boundary diffusion plays an important role in the transport process of sodium through the ceramic wall. The bulk and the grain boundary diffusion coefficients and the temperature dependencies of these transport processes have been determined. The activation energy of Na bulk diffusion is 56.5 ± 6.7 kJ/mol at 900-1200 °C, respectively the activation energies of Na grain boundary diffusion amount to 97.5 ± 21.6 kJ/mol in the temperature range 700-1100 °C and 7.7 ± 4.0 × 10⁻² kJ/mol at 400-700 °C. The preexponential factor of the bulk diffusion was found to be D_o = 5.1 × 10⁻¹⁵ ± 9.5 × 10⁻¹⁷ cm²/s in the temperature range 900-1200°C, whereas the preexponential factors of grain boundary diffusion are D_o = 1.1 × 10⁻¹⁰ ± 1.1 × 10⁻¹¹ cm²/s at 700-1100 °C and D_o = 7.5 × 10^-15 ± 1.5 × 10⁻¹⁷ cm²/s at 400-700 °C.     

Electron field emission from boron doped microcrystalline diamond

Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N_B) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E_th) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm⁻² were obtained using electric fields less than 8 V/μm.     

Effect of sintering temperature on the structural, dielectric and ferroelectric properties of tungsten substituted SBT ceramics

Structural, dielectric and ferroelectric properties of tungsten (W) substituted SrBi₂(Ta_1−xW_x)₂O₉ (SBTW) [x=0.0, 0.025, 0.05, 0.075, 0.1 and 0.2] have been studied as a function of sintering temperature (1100-1250 °C). X-ray diffraction patterns confirm the single-phase layered perovskite structure formation up to x=0.05 at all sintering temperatures. The present study reveals an optimum sintering temperature of 1200 °C for the best properties of SBTW samples. Maximum T_c of ∼390 °C is observed for x=0.20 sample sintered at 1200 °C. Peak-dielectric constant (ε_r) increases from ∼270 to ∼700 on increasing x from 0.0 to 0.20 at 1200 °C sintering temperature. DC conductivity of the SBTW samples is nearly two to three orders lower than that of the pristine sample. Remnant polarization (P_r) increases with the W content up to x≤0.075. A maximum 2P_r (∼25 μC/cm²) is obtained with x=0.075 sample sintered at 1200 °C. The observed behavior is explained in terms of improved microstructural features, contribution from the oxygen and cationic vacancies in SBTW. Such tungsten substituted samples sintered at 1200 °C exhibiting enhanced dielectric and ferroelectric properties should be useful for memory applications.     

Laser synthesis of semiconductor nanostructures with narrow band gap

Semiconductor nanostructures with narrow band gap were synthesized by means of laser chemical vapor deposition (LCVD) of elements from iron carbonyl vapors [Fe(CO)₅] under the action of Ar⁺ laser radiation (λ_L = 488 nm) on the Si substrate surface. The temperature dependence of the specific conductivity of these nanostructures in the form of thin films demonstrated typical semiconductor tendency and gave the possibility to calculate the band gap for intrinsic conductivity (E_g) and the band gap assigned for impurities (E_i), which were depended upon film thickness and applied electrical field. Analysis of deposited films with scanning electron microscopy (SEM) and atomic force microscopy (AFM) demonstrated their cluster structure with average size not more than 100 nm. Semiconductor properties of deposited nanostructures were stipulated with iron oxides in different oxidized phases according to X-ray photoelectron spectroscopy (XPS) analysis.These deposited nanostructures were irradiated with Q-switched YAG laser (λ_L = 1064 nm) at power density about 6 × 10⁷ W/cm². This irradiation resulted in the crystallization process of deposited films on the Si substrate surface. The crystallization process resulted in the synthesis of iron carbide-silicide (FeSi_2−xC_x) layer with semiconductor properties too. The width of the band gap E_g of the synthesized layer of iron carbide-silicide was less than for deposited films based on iron oxides Fe₂O_3−x (0 ≤ x ≤ 1).     

Crystallization of hydrogenated amorphous silicon carbon films with laser and thermal annealing

The crystallization of silicon rich hydrogenated amorphous silicon carbon films prepared by Plasma Enhanced Chemical Vapor Deposition technique has been induced by excimer laser annealing as well as thermal annealing. The excimer laser energy density (E_d) and the annealing temperature were varied from 123 to 242 mJ/cm² and from 250 to 1200 °C respectively. The effects of the two crystallization processes on the structural properties and bonding configurations of the films have been studied. The main results are that for the laser annealed samples, cubic SiC crystallites are formed for E_d ≥ 188 mJ/cm², while for the thermal annealed samples, micro-crystallites SiC and polycrystalline hexagonal SiC are observed for the annealing temperature of 800 and 1200 °C respectively. The crystallinity degree has been found to improve with the increase in the laser energy density as well as with the increase in the annealing temperature.     

Low temperature sintering of sub-stoichiometric Ni-Cu-Zn ferrites: Shrinkage, microstructure and permeability

We have studied sub-stoichiometric Ni-Cu-Zn ferrites with iron deficiency (i.e., <50mol% Fe₂O₃) of composition Ni_0.20Cu_0.20Zn_0.60+zFe_2−zO_4−(z/2) with 0≤z≤0.06. The temperature of maximum shrinkage rate is shifted from T=1000 °C for z=0 towards lower temperatures down to T=900 °C for a sub-stoichiometric ferrite with z=0.02. Dense samples are obtained after firing at 900 °C for z>0 only. Sub-stoichiometric compositions (z>0) do not form single-phase spinel ferrites after sintering at 900 °C, but rather represent mixtures of CuO and a stoichiometric ferrite with slightly modified composition. The formation of small amounts of CuO at grain boundaries is demonstrated by XRD and SEM. The permeability is increased from μ=80 for stoichiometric ferrites (z=0) to μ=660 for z=0.02. The formation of CuO during sintering of sub-stoichiometric ferrites supports densification and is a prerequisite for low temperature firing of multilayer inductors. Addition of 1 wt% Bi₂O₃ as liquid phase sintering aid is required to provide sufficient densification of the stoichiometric ferrite (z=0) at 900 °C. Addition of 0.37 wt% Bi₂O₃ to a sub-stoichiometric ferrite (z=0.02) results in dense samples after firing at 900 °C; however, the microstructure formation is dominated by heterogeneous grain growth.     

Resonant two-photon ionization and mass-analyzed threshold ionization spectroscopy of the selected rotamers of m-methoxyaniline and o-methoxyaniline

We report the resonant two-photon ionization and mass-analyzed threshold ionization (MATI) spectra of m-methoxyaniline and o-methoxyaniline. The vibronic features of m-methoxyaniline are built on 34308 ± 2 and 34495 ± 2 cm⁻¹ corresponding to the origins of the S₁ ← S₀ electronic transition (E₁’s) of the cis and trans rotamers. Analysis of the MATI spectra gives the adiabatic ionization energies (IEs) of 59983 ± 5 and 60879 ± 5 cm⁻¹ for these two species. o-Methoxyaniline is found to have only one stable structure whose E₁ and IE are 33875 ± 2 and 58678 ± 5 cm⁻¹, respectively. Most of the active vibrations of m- and o-methoxyaniline in the electronically excited S₁ and cationic ground D₀ states result from the in-plane ring vibrations. Comparing these data with those of p-methoxyaniline allows us to learn about the vicinal substitution effects resulting from the relative locations of the NH₂ and OCH₃ substituents.     

Magnetic properties of MnO nanocrystals dispersed in a silica matrix

Magnetic nanocrystalline MnO particles have been synthesized in a silica glass matrix by the sol-gel method at calcination temperatures up to 1000 °C. EPR spectra of 0.1 mol% MnO doped silica gel and glasses studied in the temperature range 10-290 K show with the exception of those samples calcined at 900 and 1000 °C 6-line characteristic Mn(II) hyperfine (HF) lines. Additionally five spin-forbidden doublets have been observed at 100 K and below. Small spreads in spin Hamiltonian parameters (D and E) imply that the ligand field environments of Mn(II) ions embedded in the silica glass are nearly uniform. Monotonous decrease in HF linewidth in going from 120 °C gel to 800 °C calcined glass has been interpreted as the continuous decrease in population of isolated Mn²⁺ ions in silica glass matrix resulting in the decrease of magnetic dipolar interactions leading to the observed decrease in HF linewidth. XRD and TEM of sample calcined at 1000 °C shows the presence of nanocrystals of MnO having orthorhombic crystalline phase and sizes about 10 nm. The thermal behavior of magnetization (zero-field-cooled and field-cooled) and magnetic hysteresis of MnO nanocrystals in the 5-300 K temperature interval have demonstrated that the MnO nanocrystals display superparamagnetic-ferromagnetic transition at low temperatures. X-band EPR linewidth data plotted versus inverse of temperature (1/T) for samples calcined at 900 and 1000 °C (EPR recorded in the vicinity of 0.35 T applied field) depict similar transitions.     

Nature of electric and magnetic dipoles gleaned from the Poynting theorem and the Lorentz force law of classical electrodynamics

Starting with the most general form of Maxwell's macroscopic equations in which the free charge and free current densities, ρ_free and J_free, as well as the densities of polarization and magnetization, P and M, are arbitrary functions of space and time, we compare and contrast two versions of the Poynting vector, namely, S = μ_o^− 1E × B and S = E × H. Here E is the electric field, H is the magnetic field, B is the magnetic induction, and μ_o is the permeability of free space. We argue that the identification of one or the other of these Poynting vectors with the rate of flow of electromagnetic energy is intimately tied to the nature of magnetic dipoles and the way in which these dipoles exchange energy with the electromagnetic field. In addition, the manifest nature of both electric and magnetic dipoles in their interactions with the electromagnetic field has consequences for the Lorentz law of force. If the conventional identification of magnetic dipoles with Amperian current loops is extended beyond Maxwell's macroscopic equations to the domain where energy, force, torque, momentum, and angular momentum are active participants, it will be shown that “hidden energy” and “hidden momentum” become inescapable consequences of such identification with Amperian current loops. Hidden energy and hidden momentum can be avoided, however, if we adopt S = E × H as the true Poynting vector, and also accept a generalized version of the Lorentz force law. We conclude that the identification of magnetic dipoles with Amperian current loops, while certainly acceptable within the confines of Maxwell's macroscopic equations, is inadequate and leads to complications when considering energy, force, torque, momentum, and angular momentum in electromagnetic systems that involve the interaction of fields and matter.     

Non-linear optical properties of silver nanoparticles prepared by hydrogen reduction method

Silver nanoparticles have been prepared using hydrogen gas as the reducing agent for silver nitrate and poly(vinyl pyrrolidone) as the capping agent; the reaction was carried out at 70 °C for 3 h. The size of the nanoparticles was found to be about 20 nm as analyzed using transmission electron micrographs. The X-ray diffraction pattern revealed the face-centered cubic (fcc) structure of silver nanoparticles. The linear absorption of Ag nanoparticles, α, is obtained about 3.71 cm⁻¹. The non-linear refractive indices of silver nanoparticles were defined by the z-scan technique using CW He-Ne laser (λ = 632.8 nm) at different incident intensities. The magnitude of non-linear refractive index (n₂) was measured to be in the order of 10⁻⁷ (cm²/W) with a negative sign. Therefore self-defocusing phenomena is taking placed for Ag nanoparticles.     

Electrochemical investigation of the surface energy: Effect of the HF concentration on electroless silver deposition onto p-Si (1 1 1)

Electroless silver deposition onto p-silicon (1 1 1) from 0.005 mol l⁻¹ AgNO₃ solutions with different HF concentration was investigated by using an electrochemical direct current polarization method and open circuit potential-time (Ocp-t) technique. The fact that three-dimensional (3D) growth of silver onto silicon is favored with increasing the HF concentration was ascribed to the drop of the surface energy and approved by electrochemical direct current polarization, Ocp-t technique and atomic force microscopy (AFM). The drop slope of open-circuit potential, K_{−ΔE(OCP)/t}, was educed from the mixed-potential theory. K_{−ΔE(OCP)/t} as well as the deposition rate determined by an inductively coupled plasma atomic emission spectrometry (ICP-AES), increased with the HF concentration, yet was not a linear function. Results were explained by the stress generation and relaxation mechanisms.