Magnetic properties and electronic structure of GdNi4Si compound

Electronic structure of the ternary GdNi₄Si compound, crystallizing in hexagonal CaCu₅ structure (P6/mmm space group) was studied by magnetic measurements, X-ray photoelectron spectroscopy (XPS) and ab initio calculations. Core levels and valence band were investigated. The valence band of the XPS spectra is determined mainly by the Ni(3d) and Gd(4f) bands. The peaks’ positions are in good agreement with binding energies of a metallic gadolinium and nickel. The experimental valence band spectrum as well as the calculated density of states exhibit the domination of the Ni(3d) states in region from −4 eV to the Fermi level.     

Structural, electronic and optical properties of orthorhombic distorted perovskite TbMnO3

This paper calculates the structural parameters, electronic and optical properties of orthorhombic distorted perovskite-type TbMnO3 by first principles using density functional theory within the generalised gradient approximation. The calculated equilibrium lattice constants are in a reasonable agreement with theoretical and experimental data. The energy band structure, density of states and partial density of states of elements are obtained. Band structures show that TbMnO3 is an indirect band gap between the O 2p states and Mn 3d states, and the band gap is of 0.48 eV agreeing with experimental result. Furthermore, the optical properties, including the dielectric function, absorption coefficient, optical reflectivity, refractive index and energy loss spectrum are calculated and analysed, showing that the TbMnO3 is a promising dielectric material.     

ELS study on initial oxidation of Ni(100) surfaces

Electron energy loss spectra of clean and oxygen-covered Ni(100) surfaces were observed with concomitant measurements of LEED, work function change, and Auger peak height ratio O(KL_{2, 3}L_{2, 3})/Ni(L_{2, 3}VV). The observed electronic transitions are interpreted on the basis of primary election energy dependence, and of comparison with the loss spectrum for a UHV-cleaved NiO(100) surface and optical data of Ni. The observed loss peaks at 9.1, 14, and 19 eV in the clean surface spectrum are ascribed to the bulk plasmon of the 4s electrons, the surface plasmon, and the bulk plasmon of the coupled 3d + 4s electrons, respectively, and the weak but sharp peak at 33 eV is tentatively attributed to the localized many-body effect in the final state. Three oxygen-derived peaks at 6.0, 8.0, and 10.3 eV in the low oxygen exposure region (?4 L) are ascribed to the O 2p(e) → Ni 3d, O 2p(a₁) → Ni 3d, and O 2p → Ni 4s transitions, respectively. In the high oxygen exposure region (?50 L), the spectra become quite similar to that of the UHV-cleaved NiO(100) surface. The oxidation process consistent with LEED, Auger peak height ratio and work function change measurements is discussed.     

Electronic exchanges between adsorbed Ni atoms and TiO2(1 1 0) surface evidenced by resonant photoemission

Nickel was deposited on stoichiometric TiO₂(1 1 0) surface in the 0.02–2.1 equivalent monolayer (eqML) range and analyzed by means of photoemission and resonant photoemission. In the case of very low coverage (lower than 0.1 eqML), deposited nickel reacts with the surface through an electronic transfer from nickel atoms towards titanium ions. This exchange caused the filling of unoccupied Ti3d states leading to the increase of a peak in the TiO₂ band gap. These states can be better characterized through resonant photoemission experiments at the Ti 3p → 3d absorption edge: for very low coverage, these states in the TiO₂ band gap have resonant behavior of Ti3d electrons rather than Ni3d ones, confirming the filling of Ti3d states and thus electron transfer between nickel and titanium. For coverage higher than 0.14 eqML, nickel peaks (both Ni3p core level and valence band) should be related to the presence of metallic nickel in small clusters.     

Electronic structure,ferroelectricity and optical properties of CaBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript>

Using first-principles calculations based on density-functional theory in its local-density approximation, we investigated the Electronic structure, ferroelectricity and optical properties of CaBi₂Ta₂O₉ (CBT) for the first time. It is found that CBT compound has an indirect band gap of 3.114 eV and the O 2s and 2p states are strongly hybridized with the 6s states of Bi which belong to the (Bi₂O₂)²⁺ planes. The quite strong Ta–O and Bi–O hybridization is the primary source for ferroelectricity. Our results imply that the interaction between Bi and O is highly covalent. The anisotropy occurs mainly above 4 eV in the optical properties. The different optical properties have been discussed.     

XRD and XPS characterisation of transition metal silicide thin films

Binary transition metal silicides based on the systems Ti–Si, Fe–Si, Ni–Si and Cr–Si were fabricated on Si wafers by means of ion-beam co-sputter deposition and subsequent annealing. The crystalline structures of the phases formed were identified from the characteristic patterns acquired by means of X-ray diffraction (XRD) measurements. The phase formation sequences were described by means of the Pretorius' effective heat of formation (EHF) model. For the Ti–Si, Fe–Si and Ni–Si systems, single phase thin films of TiSi₂, β-FeSi₂ and NiSi₂ were generated as the model predicts, while a mixture of CrSi + CrSi₂ phases was obtained for the Cr–Si system. The surface chemical condition of individual specimens was analysed by using X-ray photoelectron spectroscopy (XPS). The chemical shifts of transition metal 2p_3/2 peaks from their metallic to silicide states were depicted by means of the Auger parameters and the Wagner plots. The positive chemical shift of 2.0 eV for Ni 2p_3/2 peak of NiSi₂ is mainly governed by the initial-state effects. For the other silicide specimens, the initial-state and final-state effects may oppose one another with similar impact. Consequently, smaller binding energy shifts of both negative and positive character are noted; a positive binding energy shift of 0.3 eV for the Fe 2p_3/2 level was shown for β-FeSi₂ and negative binding energy shifts of 0.1 and 0.3 eV were determined for CrSi + CrSi₂ and TiSi₂, respectively.     

Sc2O3电子结构和光学性质的第一性原理研究

本文基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,研究了Sc2O3的电子结构、态密度和光学性质. 计算结果表明：Sc2O3是一种直接带隙半导体,其能带宽度为3.79eV,价带顶部主要由O的2p和Sc的3p3d杂化而成,导带主要由Sc的3d和O的2p构成. 同时,文中也分析了Sc2O3的介电函数、折射率、光电导率和吸收谱等光学性质. 计算得到静态介电常数 ,折射率n0=1.25,在紫外区有较大的吸收系数.     

MgCNi3的电子结构、光学性质与超导电性

用第一性原理的密度泛函能带计算方法研究了新近发现的超导体MgCNi3的电子能带结构.计算结果表明其电子结构的基本特征是：Ni的3d态和C的2p态的杂化组成了MgCNi3的导带，费米面附近的物理性质主要由来源于Ni的3d电子态决定.在费米能级(EF)以下30eV的范围内，Ni 3d态构成了能带色散微弱的密集电子态，EF恰好落在Ni 3dyz+zx和3d3z2-r2电子态密度.C 2p态分布在EF以下40—70eV的区域内，Mg主要是以二价离子Mg2+的形式存在.Mg原子的掺杂导致了Ni原子的3d态基本上全部占据，引起Ni原子磁矩的消失.费米能级EF处的态密度N(ＥＦ)是550(states/eV·cell)，由此得到的Sommerfeld常数γeal～445mJ/mol·K2.基于第一性原理的光学性质的计算结果表明：在0—12eV的范围内光吸收主要是从占据的Ni 3d态向C　2p和Ni4s的跃迁.根据这些结果得出结论：MgCNi3的超导电性基本上是强耦合的BCS电子-声子作用机理. 关键词： MgCNi3 高温超导体 电子结构 光学性质     

Evidence for the interfacial reaction between Ni adatoms and H-Si(001) surface

Hydrogen termination of Si surfaces (H-Si) does not stop the interfacial reaction between Ni adatoms and H-Si(001) surface at room temperature. At low Ni coverage of 0.1% (equivalent to 0.02 ML), X-ray photoelectron spectroscopy (XPS) reveals a binding energy shift of Ni 2p_3/2 to 854.0 eV, which corresponds to the formation a NiSi-like environment. As the coverage of Ni increases, the Ni 2p_3/2 eventually shifts to 852.8 eV, indicative of formation of metallic Ni. XPS intensity vs Ni coverage analysis reveals a growth process akin to pseudo-layer-by-layer growth mode, thereby suggesting the formation of bulk-Si(001)/NiSi-like/Ni-rich-silicide-like/metallic Ni structure as growth proceeds. For Ni coverage not more that 33% (equivalent to 12.68 ML), Ni remains protected by the silicide environment and no oxidation of Ni to form Ni-oxides was observed even after exposing the samples to air for 400 days. For samples with Ni coverage above 41%, oxidation of Ni is observed by presence of NiO and NiSiO₃ peaks at 854.5 and 857.0 eV, respectively. The current studies suggest that there is reaction between Ni adatoms and Si at the growth front on H-Si(001) surfaces upon Ni deposition at room temperature and hydrogen termination does not suppress the interface reaction between Ni and Si.     

Preparation and conducting performance of LaNiO3/Ag film and its interface reaction

LaNiO₃ thin film with perovskite structure was successfully prepared on Ag substrate via an amorphous heteronuclear complex LaNi(DTPA)·6H₂O as a precursor. The influences of precursor concentration and PEG additive with different molecular weight on the texture of the film were carefully studied. The interface states of LaNiO₃/Ag film were revealed by using AES analysis. The effect of annealing time on the interface diffusion of the LaNiO₃/Ag film was shown by using AES depth profile spectrum. The relationship between the electric resistivity of the film and the environmental temperature was measured by using four-probe method. The results showed the film had good metallic conductivity from 300 down to 77 K.     

Electronic structure of AgNbO3 and NaNbO3 studied by X-ray photoelectron spectroscopy

The XPS examinations of the AgNbO₃ and NaNbO₃ single crystals and ceramics allowed estimate their average composition as Ag_1.1Nb_0.9O₃ and Na_1.2Nb_0.9O_2.9. The valence bands of the AgNbO₃ compound, formed mainly of the Nb 4d, Ag 4d and O 2p states, show an energy gap about 3 eV while for the NaNbO₃ compound consist of the O 2p states hybridized with the Nb 3d states and show an energy gap about 4 eV. The chemical shifts of these compounds suggest a mixed ionic and covalent character of the bonds. The broadening of the core level lines of AgNbO₃ suggests a stronger structural disorder in comparison with NaNbO₃ compound.     

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn_1−xNi_xO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni has a chemical valence of 2+. According to the magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn_0.86Ni_0.14O. We studied the electronic structure of Zn_0.86Ni_0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at ∼2 eV below the Fermi energy E_F, which is of Ni 3d origin. No emission was found at E_F, suggesting the insulating nature of the film.     

A first-principles investigation of the properties of two predicted novel structures of Sn3P4

Two novel structures of Sn₃P₄ (t-Sn₃P₄ and o-Sn₃P₄) are presented in this study. For two novel phases, t-Sn₃P₄ and o-Sn₃P₄, the stabilities are verified based on the elastic constants and the phonon dispersion spectra. The phonon density of states (PHDOS), band structures, electronic density of states (DOS) and optical properties are investigated using density functional theory (DFT). o-Sn₃P₄ has better plasticity and stronger anisotropy than t-Sn₃P₄. The PHDOS in the lower frequency band is mainly derived from Sn atoms, and in the higher band it is mainly from P atoms. The band structure of t-Sn₃P₄ shows that it is a narrow indirect band gap semiconductor. And o-Sn₃P₄ presents a metallic characteristics. Below the Fermi level, the total DOS in the valence band originates mainly from P ‘p’ with the partial contribution from Sn ‘p’. The dielectric constants, conductivities, optical absorption, optical reflectivity, and energy loss functions of t-Sn₃P₄ and o-Sn₃P₄ are analyzed. For t-Sn₃P₄, the static dielectric constant is 12.66?F/m, the real part of conductivity reaches the maximum at 4.45?eV, and the peak in the loss function locates at about 15?eV. For o-Sn₃P₄, in order, they are 47.27?F/m, at 2.59?eV, and at 10.91?eV.     

The physical properties of ThCr2Si2- type nickel-based superconductors BaNi2T2 (T = P,As): An ab-initio study

Employing first-principles computations depending on the density functional theory (DFT), we have investigated the structural, mechanical, electronic, bonding, optical and thermodynamics properties of the newly discovered bulk superconductors BaNi₂P₂ (T_c ∼ 3 K) and BaNi₂As₂ (T_c ∼ 0.7 K). Our optimized lattice parameters are in good agreement with the experimental results. The positive elastic constants reveal that both the superconductors are stable in nature. The analysis of the mechanical properties insures that both the phases are ductile in nature and show anisotropic behavior. The analysis of the electronic band structures and density of states (TDOS and PDOS) reveals the metallic nature for both the compounds, and the major contribution comes from the Ni-3d states for both the phases. The calculations of the chemical bonding specify that a mixture of covalent, ionic and metallic bonds exist in bothsuperconductors. The negative value of the real part of the dielectric constant of BaNi₂T₂ (T = P, As) also ensures that these compounds exhibit metallic behavior. The large reflectivity in the low energy region indicates that both the compounds might be useful as coating materialsfor reducing solar heating. By using the elastic constants information, the calculated Debye temperatures of BaNi₂P₂ and BaNi₂As₂ are 323.70 K and 272.94 K, respectively, which are in good accord with the experimental values. Finally, we have calculated the thermal conductivity of these compounds, which is 0.56 for BaNi₂P₂ and 0.46 for BaNi₂As₂.     

Electronic structure and lattice dynamics of Li2Ni(WO4)2

We combined spectroscopic ellipsometry and Raman scattering measurements to explore the electronic structure and lattice dynamics in Li₂Ni(WO₄)₂. The optical absorption spectrum of Li₂Ni(WO₄)₂ measured at room temperature presents a direct optical band gap at 2.25 eV and two bands near 5.2 and 6.0 eV, which are attributed to charge-transfer transitions from oxygen 2p states to nickel 3d or tungsten 5p states. The Raman scattering spectrum of Li₂Ni(WO₄)₂ measured at room temperature presents seventeen phonon modes at approximately 112, 143, 193, 222, 267, 283, 312, 352, 387, 418, 451, 476, 554, 617, 754, 792, and 914 cm⁻¹. When the temperature is decreased to 20 K, the frequency, linewidth, and normalized intensity of all phonon modes exhibited almost no temperature dependence. Upon cooling across 13 K, which is the antiferromagnetic phase transition temperature, the oxygen octahedra stretching mode at 914 cm⁻¹ exhibited a softening and an increase in intensity, thus suggesting a coupling between the magnetic and lattice degrees of freedom. The spin-phonon coupling constant was estimated to be 0.94 mRy/Ų, indicating a weak spin-phonon interaction in Li₂Ni(WO₄)₂.     

Optical characterization of CuIn5S8 crystals by ellipsometry measurements

Optical properties of CuIn₅S₈ crystals grown by Bridgman method were investigated by ellipsometry measurements. Spectral dependence of optical parameters; real and imaginary parts of the pseudodielectric function, pseudorefractive index, pseudoextinction coefficient, reflectivity and absorption coefficients were obtained from the analysis of ellipsometry experiments performed in the 1.2–6.2 eV spectral region. Analysis of spectral dependence of the absorption coefficient revealed the existence of direct band gap transitions with energy 1.53 eV. Wemple–DiDomenico and Spitzer–Fan models were used to find the oscillator energy, dispersion energy, zero-frequency refractive index and high-frequency dielectric constant values. Structural properties of the CuIn₅S₈ crystals were investigated using X-ray diffraction and energy dispersive spectroscopy analysis.     

First-principles studies of the electronic structure and optical properties of AgBO<Subscript>3</Subscript> (B=Nb,Ta) in the paraelectric phase

The electronic energy-band structure, density of states (DOS), and optical properties of AgBO₃ in the paraelectric cubic phase have been studied by using density functional theory within the local density approximation for exchange-correlation for the first time. The band structure shows a band gap of 1.533 eV (AgNbO₃)and 1.537 eV (AgTaO₃)at (M-⌈)point in the Brillouin zone. The optical spectra of AgBO₃ in the photon energy range up to 30 eV are investigated under the scissor approximation. The real and imaginary parts of the dielectric function and — thus the optical constants such as reflectivity, absorption coefficient, electron energy-loss function, refractive index, and extinction coefficient — are calculated. We have also made some comparisons with related experimental and theoretical data that is available.      

First principle study of cubic perovskites: AgTF3 (T=Mg, Zn)

The structural, electronic and optical properties of AgTF₃ (T=Mg, Zn) are calculated for the first time using the full-potential linearized augmented plane wave method within the generalized gradient approximation. Structural parameters of the compounds are found to be in reasonable agreement with the available literature. Both compounds are found to have narrow and indirect band-gaps. The calculated band gap for AgMgF₃ is 0.78 eV and 0.75 eV for AgZnF₃. It is observed that Ag-4d, Zn-3d and Ag-5s states controls the electronic properties of AgMgF₃ and AgZnF₃. The nature of chemical bonding in these compounds is discussed by the electron density plots. The results of complex dielectric constant, refractive index, normal-incidence reflectivity and optical conductivity are also presented in the incident photon energy range of 0-35 eV. The wide absorption energy range makes these materials suitable for different devices applications.     

过渡金属(Ni)掺杂ZnV2O4的第一性原理计算

采用基于密度泛函理论下的MS软件模拟了过渡金属Ni掺杂ZnV₂O₄前后的能带结构、态密度以及光学性质.结果表明：ZnV₂O₄具有间接的光学跃迁且能带间隙为0.355 eV,Ni掺杂后能带间隙增加为0.785 eV,且带隙类型不变,引入的Ni-3d轨道电子对ZnV₂O₄的价带和导带组成提供了较大贡献.光学性质结果表明ZnV₂O₄为一种低介电材料,在可见光区的吸收系数和折射率较低,主要表现为紫外吸收.掺杂Ni后,在可见光区的吸收特性和光电导率均增大,有效改善了ZnV₂O₄在可见光区的光电性能.     

Elastic,electronic structure,and optical properties of orthorhombic Na<Subscript>3</Subscript>AlF<Subscript>6</Subscript>: a first-principles study

First-principles investigation of elastic, electronic, and optical properties of orthorhombic Na₃AlF₆ has been carried out by DFT using plane-wave pseudo-potentials within the LDA and GGA. Calculated lattice parameters agree well with experimental results. From calculated elastic constants, Na₃AlF₆ is a mechanically stable anisotropic and behaves in a ductile manner. Electronic structure analysis indicates that Na₃AlF₆ behaves as an insulator with a direct band gap of 6.065 eV in LDA and 5.868–5.949 eV in GGA. DOS, population analysis, and charge densities difference indicate that Al-F bonds are mainly ionic as well as partially covalent due to the hybridization of F-2p and Al-3s (3p) states. Moreover, the imaginary part of calculated dielectric function ε₂(ω) shows three prominent peaks due to the inter band transitions F 2p states→Na 3s states. From calculated ε (ω), other optical properties such as reflectivity and refractive index are also obtained up to the photon energy range of 40 eV.