Pulsed laser induced damage in SOI material

Laser-induced damage in silicon-on-insulator (SOI) material is investigated with 1064 nm laser pulses. As the laser pulse duration is increased from 190 ps to 1.14 s, the damage threshold of SOI material decreases from 1.3×10¹⁰ to 7.7×10³ W/cm² in laser flux. It is found that the damage threshold varies inversely as the pulse duration for a short irradiation time, and is independent of pulse duration for a long irradiation time. The time dependence is in good agreement with a thermal model which well describes the thermal-induced damage in a semi-finite material irradiated by a Gaussian laser beam. The values of absorption coefficient and thermal conductivity under laser irradiation are calculated as 1.1×10³ cm^?1 and 0.18 Wcm^?1 K^?1, respectively, by fitting the model to the experimental results. These results on material damage can be used to predict the damage thresholds of SOI-based devices.     

Wide-field imaging using a tunable terahertz free electron laser and a thermal image plate

The appearance of intense terahertz sources such as quantum cascade laser and free electron laser opens up new opportunities for 2D imaging. Though microbolometer and pyroelectric arrays are promising recorders, they are of small size and cannot be used when wide-field imaging in the longwave region is required. We applied for terahertz imaging 3″ × 3″ and 6″ × 6″ Macken Instruments Inc. “thermal image plates”, a set of thermal sensitive phosphor screens operating in a room temperature environment. The Novosibirsk free electron laser was used as a source of radiation. We have found that the response of thermal image plate is linear until the relative quenching is less than 60% of the initial luminescence intensity. The response curve follows the Seitz–Mott law. The threshold sensitivity was found to be 100 mW/cm² at 1.5 THz and 40 mW/cm² at 2.3 THz. Interferograms, holograms, and terahertz beam spatial distributions recorded in the spectral range of 1.2–2.5 THz are given as examples.     

Femtosecond laser processing of indium-tin-oxide thin films

Micro- and nano-scale crystalline indium-tin-oxide (c-ITO) patterns fabricated from amorphous ITO (a-ITO) thin films on a glass substrate using a (low NA 0.26) femtosecond laser pulse that is not tightly focused are demonstrated. Different types of c-ITO patterns are obtained by controlling the laser pulse energies and pulse repetition rate of a femtosecond laser beam at a wavelength of 1064 nm: periodic micro c-ITO dots with diameters of ~1.4 μm, two parallel c-ITO patterns with/without periodic-like glass nanostructures at a laser scanning path and nano-scale c-ITO line patterns with a line width ~900 nm, i.e. ~1/8 of the focused beam׳s diameter (7 μm at 1/e²).     

Improvement in solar-pumped Nd:YAG laser beam brightness

Solar-pumped solid-state lasers are promising for renewable extreme-temperature material processing. Here we report a large improvement in solar laser beam brightness by pumping a thin Nd:YAG single crystal rod. A fused silica light guide of 14 mm×22 mm rectangular cross-section is used to both transmit and homogenize the concentrated solar radiation from the focal zone of a 2.88 m² parabolic mirror to the entrance aperture of a modified 2D-CPC flooded pump cavity, within which a 4 mm diameter rod is efficiently pumped. 2.2% slope efficiency is reached. Laser beam brightness figure of merit B is three times higher than that of the most recent solar-pumped Nd:YAG laser by a Fresnel lens. The introduction of the rectangular cross-section light guide has also ensured a much more stable laser emission than previous pumping schemes.     

Efficient end-pumped Q-switched 1053 nm Nd:YLF laser with a plane-parallel resonator

In this study, a compact and efficient Nd:YLF laser at 1053 nm has been reported without inserting optical intracavity element to suppress the stronger line of 1047 nm. According to theoretical analysis and calculation, the thermal focal length of 1047 nm is negative while that of 1053 nm is positive in plane-parallel resonator. Hence 1053 nm laser was stable in this cavity. In our experiment, 7.5 W laser output at σ-polarized 1053 nm has been obtained with optical–optical efficiency of 38.8%. As the pulse repetition rate is 20 kHz, the pulse width is 50 ns and the peak power is calculated to be 7.5 kW.     

Synthesis of Ag-deionized water nanofluids using multi-beam laser ablation in liquids

Multi-pulse laser ablation of silver in deionized water was studied. The laser beams were arranged in a cross-beam configuration. In our experiments, two single-mode, Q-switched Nd-Yag lasers operating at 1064 nm, pulse duration of 5.5 ns and 10 Hz rep rate were used. The laser fluence of the second beam was 0.265 J/cm² for all tests. Two levels of the laser fluences were used for the ablating beam: 0.09 and 0.265 J/cm² (11,014 and 33,042 J/cm² at the focal point, respectively). The silver target was at 50 mm from the cell window and 10 mm deep. The second beam was aligned parallelly with the silver target and focused at 2 mm in front of the focal point of the ablating beam. For all cases, the delay time between the ablating beam and the cross-beam was 40 μs. In general, the ablated particles were almost all spherical. For fluence of 0.09 J/cm ² and single-beam approach, the mean particle size was about 29 nm. The majority of the particles, however, were in 19–35 nm range and there were some big ones as large as 50–60 nm in size. For double-beam approach, the particles were smaller with the average size of about 18 nm and the majority of the particles were in 9–21 nm range with few big one as large as 40 nm. For the beam fluence of 0.265 J/cm² and single-beam configuration, the particle sizes were smaller, the mean particles size was about 18 nm and the majority of the particles were in the range of 10–22 nm with some big one as large as 40 nm. For double-beam approach, the mean particle size was larger (24.2 nm) and the majority of the particle were distributed from 14 to 35 nm with some big particles can be found with sizes as big as 70 nm. Preliminary measurements of the thermal conductivity and viscosity of the produced samples showed that the thermal conductivity increased about 3–5% and the viscosity increased 3.7% above the base fluid viscosity even with the particle volume concentration as low as 0.01%.     

Efficient femtosecond Yb:YAG laser pumped by a single-mode laser diode

Single-mode diodes enable a particularly simple, compact and effective pumping of solid-state laser devices for many specialized applications. We investigated a single-mode, 300-mW laser diode for pumping at 935 nm a Yb:YAG laser passively mode-locked by a semiconductor saturable absorber. Relatively short pulse generation (156 fs), tunable across 1033–1059 nm has been demonstrated. An optical-to-optical efficiency of about 28% has been obtained with 320 fs long pulses. Therefore, contrarily to what previously believed, compact diode-pumped ultrafast Yb:YAG oscillators can reliably and efficiently deliver pulses in the range of ≈ 100–200 fs with few tens of mW, which are very appealing for bio-diagnostics and amplifier seeding applications.     

A study of the influence of the input electrical power on the spectral width of the 510.6 nm line of an atomic copper vapor laser

The effect of the input electrical power on the spectral width of the 510.6 nm line of an atomic copper vapor laser (CVL) is investigated. An analysis of the gas temperature inside the discharge tube and the line broadening mechanism of the CVL is reported. The input electrical power was varied from 2.0 to 4.2 kW in a cylindrical discharge tube of inner radius 2.35 cm and length 150.0 cm. A Fabry–Perot etalon and imaging camera-based setup interfaced with personal computer was used to measure the spectral width of the 510.6 nm (green) laser line. The Doppler broadened spectral profile of the laser emission varies with input electrical power and an additional broadening of almost 1 GHz at the highest operating input power was observed.     

Investigation of optimum condition in oxygen gas-assisted laser cutting

Laser cutting characteristics including power level and cutting gas pressure are investigated in order to obtain an optimum kerf width. The kerf width is investigated for a laser power range of 50–170 W and a gas pressure of 1–6 bar for steel and mild steel materials. Variation of sample thickness, material type, gas pressure and laser power on the average cut width and slot quality are investigated. Optimum conditions for the steel and mild steel materials with a thickness range of 1–2 mm are obtained. The optimum condition for the steel cutting results in a minimum average kerf width of 0.2 mm at a laser power of 67 W, cutting rate of 7.1 mm/s and an oxygen pressure of 4 bar. A similar investigation for the mild steel cutting results in a minimum average kerf width of 0.3 mm at the same laser power of 67 W, cutting rate of 9.5 mm/s, and an oxygen pressure of 1 bar. The experimental average kerf is about 0.3 mm, which is approximately equal to the estimated focused beam diameter of 0.27 mm for our focusing lens (f=4 cm and 100 W power). This beam size leads to a laser intensity of about 1.74×10⁹ W/m² at the workpiece surface. The estimated cutting rate from theoretical calculation is about 8.07 mm/s (1.0 mm thickness and 100 W power), which agrees with the experimental results that is 7.1 mm/s for 1.0 mm thickness of mild steel at the laser power of 88 W.     

Widely tunable compact erbium-doped fiber ring laser for fiber-optic sensing applications

A compact erbium-doped ring-shaped fiber laser suitable for fiber-optic sensing applications has been developed. The fiber laser utilized a tunable fiber Fabry–Perot filter as the tuning element and had a moderate milli-Watt level power output over almost the whole tuning range from 1530 to 1595 nm with a power fluctuation of 0.15 dB. High repetition rate scanning of laser operation over the whole tuning range was achieved at rates of up to 200 Hz. Moreover, the performance of the ring-shaped fiber laser configured with a high-concentration erbium-doped fiber was investigated for its larger wavelength tunability of over 100 nm. Output power characteristics of this ring-shaped fiber laser were also investigated when it worked in a scanning mode. A distorted power wavelength dependence, as well as some pulsing phenomenon were observed in scanning mode.     

A diode end-pumped passively Q-switched Nd:YAG/KTA Raman laser

A diode end-pumped passively Q-switched Nd:YAG/KTA intracavity Raman laser is presented. A KTA crystal with a size of 5 mm × 5 mm × 25 mm is used as the Raman active medium and its 234 cm^?1 Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1091 nm Raman laser. A 2 mm thick Cr⁴⁺:YAG crystal is used as the saturable absorber. With an LD pump power of 7.5 W, the first-Stokes power of 250 mW is obtained with a pulse repetition frequency of 14.5 kHz. The corresponding diode-to-Stokes conversion efficiency is 3.3% and the pulse energy is 17.2 μJ. Pulse width is measured to be 12.6 ns and peak power is 1.4 kW.     

A beam shaping design for coupling high power diode laser stack to fiber with capability of spectral narrowing and stabilizing

We applied a VHG-FAC lens in our design in this work to collimate the fast axis and lock the output spectrally. We used a beam shaping technique to improve the beam symmetry and power density of a high power diode laser stack with a stripe mirror plate, a V-Stack mirror and polarization beam combining elements. By this technique, the beam of a high power diode laser stack is effectively coupled into a standard 365 μmcore diameter and a NA = 0.22 fiber. By this technique, compactness, higher efficiency, narrower spectral line width and lower production cost of the diodes are possible.     

60 W yellow laser at 561 nm by intracavity frequency doubling of a diode-pumped Q-switched Nd:YAG laser

A high-power yellow laser was achieved by intracavity frequency doubling of a diode-pumped Nd:YAG rod laser. A solid etalon was inserted into the resonator to implement efficient operation of the low-gain single line at 1123 nm transition. By using a LBO crystal inside the cavity as the frequency doubler, the maximum output power of the 561 nm yellow laser was obtained to be as high as 60.3 W with a pulse repetition frequency of 6 kHz, corresponding to an optical-to-optical conversion efficiency of about 6.1%. The output power fluctuation of the yellow laser was measured to be better than 3% in half an hour.     

Experimental femtosecond laser photodisruption of rabbit sclera for minimally invasive laser sclerostomy: An in vitro study

Femtosecond laser technology, used as a minimally invasive tool in intrastromal refractive surgery, may also have potential as a useful instrument for glaucoma filtration surgery. The purpose of the present study was to evaluate the feasibility of minimally invasive laser sclerostomy by femtosecond laser photodisruption and seek the appropriate patterns of laser ablation and relevant laser parameters. A femtosecond laser (800 nm/50 fs/1 kHz), focused by a 0.1 numerical aperture (NA) objective lens, with different pulse energies and exposure times was applied to ablate hydrated rabbit sclera in vitro. The irradiated samples were examined by scanning electron microscopy (SEM). By moving a three-dimensional, computer-controlled translation stage to which the sample was attached, the femtosecond laser could produce three types of ablation patterns, including linear ablation, cylindrical aperture and rectangular cavity. With pulse energies ranging from 37.5 to 150 μJ, the linear lesions were consistently observed at the inner surface of sclera, whereas it failed to make any photodisruption if pulse energy was below the threshold value of 31.25 μJ, with the corresponding threshold intensity of 4.06×10¹⁴ W/cm². The depths of the linear lesions increased linearly with both pulse energy (37.5–150 μJ) and exposure time (0.1–0.4 s). Histological examination showed the incisions produced by femtosecond laser photodisruption had precise geometry and the edges were sharp and smooth, with no evidence of collateral damage to the surrounding tissue. Our results predict the potential application of femtosecond laser pulses in minimally invasive laser sclerostomy for glaucoma treatment.     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

Epitaxial ZnO thin films grown by pulsed electron beam deposition

In this work, the pulsed electron beam deposition method (PED) is evaluated by studying the properties of ZnO thin films grown on c-cut sapphire substrates. The film composition, structure and surface morphology were investigated by means of Rutherford backscattering spectrometry, X-ray diffraction and atomic force microscopy. Optical absorption, resistivity and Hall effect measurements were performed in order to obtain the optical and electronic properties of the ZnO films. By a fine tuning of the deposition conditions, smooth, dense, stoichiometric and textured hexagonal ZnO films were epitaxially grown on (0001) sapphire at 700 °C with a 30° rotation of the ZnO basal plane with respect to the sapphire substrate. The average transmittance of the films reaches 90% in the visible range with an optical band gap of 3.28 eV. Electrical characterization reveals a high density of charge carrier of 3.4 × 10¹⁹ cm^?3 along with a mobility of 11.53 cm²/Vs. The electrical and optical properties are discussed and compared to ZnO thin films prepared by the similar and most well-known pulsed laser deposition method.     

Thermal stability and spectroscopic properties of erbium-doped niobic-tungsten–tellurite glasses for laser and amplifier devices

Er³⁺ doped niobic-tungsten–tellurite glasses doped with concentration of Er³⁺ ion up to 3 wt% were fabricated. The effect of Er³⁺ doping concentration on thermal stability and optical properties was investigated in order to obtain the most suitable rare earth content for developing 1.5 μm compact fiber amplifier pumped with a commercial telecom 980 nm laser diode. The maximum doping concentration allowed was found to be around 1.77×10²⁰ ions/cm³, for which a broad 1.5 μm emission spectra of 65 nm FWHM and a lifetime of 3.4 ms for the ⁴I_13/2 level was measured.     

Low-threshold continuous-wave Tm3+:YAlO3 laser

We describe a continuous-wave, low-threshold Tm:YAlO₃ (Tm:YAP) laser operating at 1945 nm with incident threshold pump powers in the 10–20 mW range. The z-cavity containing a 2-mm-long Tm:YAP crystal with 4 at.% Tm³⁺ concentration was end pumped by a continuous-wave Ti:sapphire laser at 795 nm. Tight focusing of the pump and the laser beams enabled low-threshold operation. The power performance of two different cavity configurations with 5-cm radius (R = 5 cm cavity) and 10-cm radius (R = 10 cm cavity) curved mirrors was tested. The best performance was obtained with the R = 10 cm configuration, where, the incident threshold pump power could be lowered to 10 mW after optimizing the polarization direction of the pump beam and by employing double pumping. Theoretical estimation of the threshold power was in good agreement with the experimental observations. The laser could be further tuned from 1842 to 1994 nm.     

Diode-pumped actively Q-switched Nd:GGG laser operating at 938 nm

The stimulated emission cross-section of Nd:GGG crystal in 938 nm transition was measured by the amplifier approach. It is 2.3×10^?20 cm². A quasi-continuous-wave diode pumped, actively Q-switched Nd:GGG laser operating at 938 nm was demonstrated. Pumped by laser diodes with 900 W peak power and 300 μs pulse duration, it generated 168 mJ energy in long pulse mode. The slope efficiency was 36%. Q-switched by a KD?P Pockels cell, 41 mJ output pulse energy was obtained. The pulse duration and peak power were 120 ns and 340 kW, respectively. The optical to optical efficiency was 7%.     

Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice

In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320 × 256 focal plane array (FPA) was fabricated. Unipolar barrier and PπMN structure in our dual band detector structure were used to suppress cross-talk and dark current, respectively. The two channels, with respective 50% cut-off wavelength at 4.5 μm and 10 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band are 53% at 3.2 μm under no bias voltage and 40% at 6.4 μm under bias voltage of −170 mV, respectively. And the dark current density under 0 and −170 mV of applied bias are 1.076 × 10⁻⁵ A/cm² and 2.16 × 10⁻⁴ A/cm². The specific detectivity of MWIR band and LWIR band are 2.15 × 10¹² cm·Hz^1/2/W at 3.2 μm and 2.31 × 10¹⁰ cm·Hz^1/2/W at 6.4 μm, respectively, at 77 K. The specific detectivity of LWIR band maintains above 10¹⁰ cm·Hz^1/2/W at the wavelength range from 4.3 μm to 10.2 μm under −170 mV. The cross-talk, selectivity parameter at 3.0 μm, about 0.14 was achieved under bias of −170 mV. Finally, the thermal images were taken by the fabricated FPA at 77 K.