Double-dot quantum ratchet driven by an independently biased quantum point contact

We study a double quantum dot (DQD) coupled to a strongly biased quantum point contact (QPC), each embedded in independent electric circuits. For weak interdot tunneling we observe a finite current flowing through the Coulomb blockaded DQD in response to a strong bias on the QPC. The direction of the current through the DQD is determined by the relative detuning of the energy levels of the two quantum dots. The results are interpreted in terms of a quantum ratchet phenomenon in a DQD energized by a nearby QPC.     

Manipulation of a single charge in a double quantum dot

We manipulate a single electron in a fully tunable double quantum dot using microwave excitation. Under resonant conditions, microwaves drive transitions between the (1,0) and (0,1) charge states of the double dot. Local quantum point contact charge detectors enable a direct measurement of the photon-induced change in occupancy of the charge states. From charge sensing measurements, we find T1 approximately 16 ns and a lower bound estimate for T*(2) of 400 ps for the charge two-level system.     

Energy-dependent tunneling in a quantum dot

We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The tunneling process is shown to be elastic, and a model describing tunneling in terms of the dot energy relative to the height of the tunnel barrier quantitatively describes the measurements.     

Decoherence of the Kondo singlet via a quantum point contact detector

We investigate the effect of the charge state measurement of the Kondo singlet in a quantum dot transistor via a capacitively coupled quantum point contact detector. By employing the variational ansatz for the singlet ground state of the quantum dot combined with the density matrix formulation for the coupled system, we show that the coherent Kondo singlet is destroyed by the phase-sensitive as well as the current-sensitive detection in the transmission and reflection coefficients at the quantum point contact. We argue that the phase-sensitive component of the decoherence rate may explain the anomalous features observed in a recent experiment by Avinun-Kalish et al. [Phys. Rev. Lett. 92, 156801 (2004)]. We also discuss the correlations of the shot noise at the quantum point contact detector and the decoherence in the quantum dot.     

Intersublevel transitions in self-assembled quantum dots

Intersublevel transitions in semiconductor quantum dots are transitions of a charge carrier between quantum dot confined states. In InAs/GaAs self-assembled quantum dots, optically active intersublevel transitions occur in the mid-infrared spectral range. These transitions can provide a new insight on the physics of semiconductor quantum dots and offer new opportunities to develop mid-infrared devices. A key feature characterizing intersublevel transitions is the coupling of the confined carriers to phonons. We show that the effect of the strong coupling regime for the electron–optical phonon interaction and the formation of mixed electron–phonon quasi-particles called polarons drastically affect and control the dynamical properties of quantum dots. The engineering of quantum dot relaxation rates through phonon coupling opens the route to the realization of new devices like mid-infrared polaron lasers. We finally show that the measurement of intersublevel absorption is not limited to quantum dot ensembles and that the intersublevel ultrasmall absorption of a single quantum dot can be measured with a nanometer scale resolution by using phonon emission as a signature of the absorption. To cite this article: P. Boucaud et al., C. R. Physique 9 (2008).     

Towards hybrid circuit quantum electrodynamics with quantum dots

Cavity quantum electrodynamics allows one to study the interaction between light and matter at the most elementary level. The methods developed in this field have taught us how to probe and manipulate individual quantum systems like atoms and superconducting quantum bits with an exquisite accuracy. There is now a strong effort to extend further these methods to other quantum systems, and in particular hybrid quantum dot circuits. This could turn out to be instrumental for a noninvasive study of quantum dot circuits and a realization of scalable spin quantum bit architectures. It could also provide an interesting platform for quantum simulation of simple fermion–boson condensed matter systems. In this short review, we discuss the experimental state of the art for hybrid circuit quantum electrodynamics with quantum dots, and we present a simple theoretical modeling of experiments.     

Multipeak Kondo effect in one- and two-electron quantum dots

We have fabricated a few-electron quantum dot that can be tuned down to zero electrons while maintaining strong coupling to the leads. Using a nearby quantum point contact as a charge sensor, we can determine the absolute number of electrons in the quantum dot. We find several sharp peaks in the differential conductance, occurring at both zero and finite source-drain bias, for the one- and two-electron quantum dot. We attribute the peaks at finite bias to a Kondo effect through excited states of the quantum dot and investigate the magnetic field dependence of these Kondo resonances.     

Ultrafast spin dynamics and critical behavior in half-metallic ferromagnet: Sr2FeMoO6

We propose a measurement setup for detecting quantum noise over a wide frequency range using inelastic transitions in a tunable two-level system as a detector. The frequency-resolving detector consists of a double quantum dot which is capacitively coupled to the leads of a nearby mesoscopic conductor. The inelastic current through the double quantum dot is calculated in response to equilibrium and nonequilibrium current fluctuations in the nearby conductor, including zero-point fluctuations at very low temperatures. As a specific example, the fluctuations across a quantum point contact are discussed.     

Phonon-induced exciton dephasing in quantum dot molecules

A new microscopic approach to the optical transitions in quantum dots and quantum dot molecules, which accounts for both diagonal and nondiagonal exciton-phonon interaction, is developed. The cumulant expansion of the linear polarization is generalized to a multilevel system and is applied to calculation of the full time dependence of the polarization and the absorption spectrum. In particular, the broadening of zero-phonon lines is evaluated directly and discussed in terms of real and virtual phonon-assisted transitions. The influence of Coulomb interaction, tunneling, and structural asymmetry on the exciton dephasing in quantum dot molecules is analyzed.     

Rabi oscillations of excitons in single quantum dots

Transient nonlinear optical spectroscopy, performed on excitons confined to single GaAs quantum dots, shows oscillations that are analogous to Rabi oscillations in two-level atomic systems. This demonstration corresponds to a one-qubit rotation in a single quantum dot which is important for proposals using quantum dot excitons for quantum computing. The dipole moment inferred from the data is consistent with that directly obtained from linear absorption studies. The measurement extends the artificial atom model of quantum dot excitonic transitions into the strong-field limit, and makes possible full coherent optical control of the quantum state of single excitons using optical pi pulses.     

Single-shot detection of electrons generated by individual photons in a tunable lateral quantum dot

We demonstrate single-shot detection of single electrons generated by single photons using an electrically tunable quantum dot and a quantum point contact charge detector. By tuning the quantum dot in a Coulomb blockade before the photoexcitation, we observe the trapping and subsequent resetting of single photogenerated electrons. The photogenerated electrons can be stored in the dot for a tunable time range from shorter to longer than the spin-flip time T1. We combine this trap-reset technique with spin-dependent tunneling under magnetic fields to observe the spin-dependent photon detection within the T1.     

Coulomb blockade oscillations in the thermopower of open quantum dots

We consider Coulomb blockade oscillations of thermoelectric coefficients of a single electron transistor based on a quantum dot strongly coupled to one of the leads. An analytic expression for the thermopower as a function of temperature T and the reflection amplitude r in the quantum point contact is obtained. Two regimes can be identified: TEC/r/2, where EC is the charging energy of the dot. The former regime is characterized by a weak logarithmic dependence of the thermopower on the reflection coefficient, in the latter the thermopower is linear in the reflection coefficient /r/2 but depends on temperature only logarithmically.     

Leggett-Garg inequality with a kicked quantum pump

A kicked quantum nondemolition measurement is introduced, where a qubit is weakly measured by pumping current. Measurement statistics are derived for weak measurements combined with single-qubit unitary operations. These results are applied to violate a generalization of the Leggett-Garg inequality. The violation is related to the failure of the noninvasive detector assumption, and may be interpreted as either intrinsic detector backaction, or the qubit entangling the microscopic detector excitations. The results are discussed in terms of a quantum point contact kicked by a pulse generator, measuring a double quantum dot.     

Adaptive computation by interacting quantum dots

We present a theoretical study and discussion of computationally useful nanoelectronic circuits which use adaptive control methods both to achieve the circuit function and to compensate for unpredictable nonuniformities in the circuit environment. In the regime where the scaling of conventional digital electronics breaks down, nanoelectronic circuitry will be required to perform robustly in the presence of inevitable device–device interactions, sensitivity to circuit parameters of quantum devices, and deviations from ideal circuit design. To examine the role of adaption in addressing these issues, we focus on a specific class of scaleable circuit architectures composed of Coulombically interacting polarizable anisotropic quantum dots which include input polarization dots, output polarization dots, and an array of processing dots. We implement the adaptive control of these circuits by assuming that particular features of the processing dots such as energy barriers, charge, shape, or orientation can be experimentally modified. A method of adaptive feedback is used to modify the processing dots and produce desired correlations between the input and output dot polarizations as computed by the circuit. A variational quantum Monte Carlo method has been used to simulate the many-body response of model GaAs dot circuits in which the mutual orientation of the dots is adapted to successfully achieve different desired patterns of correlation. We demonstrate the robustness of the adaptive circuits for circuit nonuniformities and for sensitivity to circuit parameters due to quantum effects.     

Coupling a quantum dot, fermionic leads, and a microwave cavity on a chip

We demonstrate a hybrid architecture consisting of a quantum dot circuit coupled to a single mode of the electromagnetic field. We use single wall carbon nanotube based circuits inserted in superconducting microwave cavities. By probing the nanotube dot using a dispersive readout in the Coulomb blockade and the Kondo regime, we determine an electron-photon coupling strength which should enable circuit QED experiments with more complex quantum dot circuits.     

Continuous absorption background and decoherence in quantum dots

We consider theoretically the role of crossed transitions on the interband optical properties of quantum dots. These transitions, which involve one bound state and one delocalized state, are inherent to the joint nature of the valence-to-conduction density of states in quantum dots. We show that they play a crucial role both on the interband absorption and on the broadening of the quantum dot lines.     

Frequency-selective single-photon detection using a double quantum dot

We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of electrons between the quantum dots due to photon absorption. The frequency of the absorbed radiation is set by the energy separation between the dots, which is easily tuned with gate voltages. Using time-resolved charge-detection techniques, we can directly relate the detection of a tunneling electron to the absorption of a single photon.     

Electron radiation effects on InAs/GaAs quantum dot lasers

The InAs/GaAs quantum dot laser diodes and corresponding quantum dot samples are irradiated by 1 MeV electron. The laser performance and quantum dot photoluminescence intensity at room temperature are enhanced over a fluence range of 4 × 10¹³ cm^?2. The radiation-induced defects increase the efficiency of carrier transfer to the quantum dots, which results in the improvement of photoluminescence performance under low level displacement damage. The contact resistant of quantum dot lasers decreases because the ohmic contact is also improved by electron irradiation.     

Band structure and impurity effects on optical properties of quantum well and quantum dot infrared photodetectors

We examined theoretically band structure and discrete dopant effects in the quantum well infrared photodetector (QWIP) and the quantum dot infrared photodetector (QDIP). We find that in QWIPs discrete dopant effects can induce long wavelength infrared absorption through impurity assisted intra-subband optical transitions. In QDIPs, we find that a strategically placed dopant atom in a quantum dot can easily destroy the symmetry and modify the selection rule. This mechanism could be partially responsible for normal incidence absorption observed in low-aspect-ratio quantum dots.     

Optical absorptions of a biexciton quantum dot

A investigation of the linear and nonlinear optical properties for intersubband electronic transitions associated with a biexciton in a quantum dot has been performed by using the method of few-body physics. The optical absorption coefficients and the refractive index changes have been examined based on the computed energies and wave functions. It is over two orders of magnitude higher than that obtained in an exciton quantum dot. The results show that the optical absorption saturation intensity can be controlled by the confinement potential frequency and the relaxation time.