Sn掺杂ZnO纳米针的结构及其生长机制(英文)

利用包括磁控溅射和热氧化的两步法在Si(111)衬底上制备了Sn掺杂ZnO纳米针.首先用磁控溅射法在Si(111)衬底上制备Sn:Zn薄膜,然后在650℃的Ar气氛中对薄膜进行热氧化,制备出Sn掺杂ZnO纳米针.样品的结构、成分和光学性质采用X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)、能量散射X射线(EDX)谱和光致发光(PL)光谱等技术手段进行分析.结果表明,制备的样品为具有六方纤锌矿结构的单晶Sn掺杂ZnO纳米针,Sn掺杂量为2.5%(x,原子比),底部和头部直径分别为200-500 nm和40 nm,长度为1-3μm,结晶质量较高.室温光致发光光谱显示紫外发光峰比纯ZnO的发光峰稍有蓝移,这可归因于能谱分析中探测到的Sn的影响.基于本实验的实际条件,简单探讨了Sn掺杂ZnO纳米针的生长机制.     

Zn_xCd_(1-x)S∶Ag纳米晶的合成及其光学性质研究

以巯基丙酸(MPA)为稳定剂,利用共沉淀法制备了水溶性的Ag掺杂的ZnxCd1-xS合金型纳米晶.Ag掺杂后ZnxCd1-xS纳米晶产生新的发射峰,并且发光效率得到了有效提高.通过改变纳米粒子中Zn/Cd比例可有效地调控ZnxCd1-xS∶Ag纳米晶的吸收带隙宽度,同时可以在425~603 nm之间实现对ZnxCd1-xS∶Ag纳米晶发射峰位的连续调控.     

ZnxCd1-xS∶Ag纳米晶的合成及其光学性质研究

以巯基丙酸(MPA)为稳定剂, 利用共沉淀法制备了水溶性的Ag掺杂的ZnxCd1-xS合金型纳米晶. Ag掺杂后ZnxCd1-xS纳米晶产生新的发射峰, 并且发光效率得到了有效提高. 通过改变纳米粒子中Zn/Cd比例可有效地调控ZnxCd1-xS∶Ag纳米晶的吸收带隙宽度, 同时可以在425～603 nm之间实现对ZnxCd1-xS∶Ag纳米晶发射峰位的连续调控.     

氧化锌纳米带的低温无催化热蒸发制备及其表征

通过纯锌粉蒸发，在600 ℃无催化条件下成功制备了高质量的不同形貌的ZnO纳米带.该制备方法中控制产物形貌和尺寸的关键是氧、氩及锌蒸气的流速及分压.扫描电镜及高分辩透射电镜观察显示，氧化锌纳米带具有规整光滑及齿状等不同形貌，且皆为单晶，其生长由固-气机理控制.室温光致发光谱表明，齿状氧化锌纳米带在390 nm附近形成紫外发射峰；在455～495 nm时，形成绿光发射峰，该处由4个次级发射峰组成.     

固相反应法制备BaHfO3∶Ce纳米粒子及发光特性

通过固相反应法合成了BaHfO3:Ce纳米粒子.采用XRD、SEM等手段分析了粉体合成过程的物相变化及形貌特性:用荧光光度计分析了样品的激发和发射光谱.结果表明:混合粉体经1000℃煅烧2 h,合成出近似球形、分散性良好的BaHfO3:Ce纳米粒子.一次粒径约30 nm.掺杂少量Ce3+离子能引起基质BaHfO3的晶格畸变,并未改变立方晶系结构.BaHfO3:Ce样品的激发光谱由2个激发峰构成,峰值分别位于396和446nm处.396 nm波长激发的发射光谱主要由2个发光谱带组成,其峰值分别位于531和591 nm波长处,发光机制对应Ce3+的5d→2F5/2和5→2F7/2能级跃迁.用446 nm波长激发时,只有一个宽带发射峰,峰值位于593 nm处,而530 nm附近的峰已趋于平缓.当掺杂Ce3+u的物质的量分数为0.9%时,发射峰值达到最大;当Ce3+含量为1.1%时,导致发射峰值强度降低,这是由于Ce3+的浓度猝灭产生的.     

聚合物为模板制备CdS, ZnS及其掺杂纳米材料

以聚苯乙烯-马来酸酐为模板,合成了CdS,CdS︰Mn,ZnS,ZnS︰Mn及ZnS︰Tb纳米微粒.紫外吸收光谱表明所得微粒尺寸均匀,TEM结果显示CdS纳米微粒的尺寸为2.5 nm.从荧光光谱观察到掺杂离子的特征发射峰,证实了基质到掺杂离子的能量传递.通过红外光谱研究了聚合物与金属离子的键合作用,金属离子首先与聚合物的羧基配位,生成硫化物纳米微粒后,聚合物又包覆在纳米微粒的表面形成保护层.     

用水溶液中合成的量子点作为生物荧光标记物的研究

以巯基丙酸(HS-CH₂CH₂COOH)为稳定剂,在水溶液中合成了具有窄而对称(FWHM=40nm)的荧光发射带且尺寸为3nm的CdTe半导体纳米粒子,并用此纳米粒子成功地标记了生物分子胰蛋白酶.与单独的CdTe纳米粒子的溶液相比较,CdTe-胰蛋白酶溶液的吸收光谱在400～600nm范围内较为平坦,其发射光谱蓝移8nm,但发射峰的半峰宽不变.实验证明,CdTe-胰蛋白酶溶液吸收和发射光谱的变化是由CdTe纳米粒子与胰蛋白酶之间的结合反应引起的,而不是由空气中的O₂所引起的,加热可促进CdTe纳米粒子与胰蛋白酶之间的结合反应.     

白光LED用KCaPO4:Eu3+红色荧光粉制备及其发光特性

采用高温固相法制备了KCaPO4:Eu3+红色发光材料,研究了Eu3+掺杂浓度、电荷补偿剂等对材料发光性质的影响.结果显示,在397 nm近紫外光激发下,材料呈多峰发射,分别由Eu3+的5D0→7FJ(J=0,1,2,3,4)能级跃迁产生,主峰为613 nm;监测613 nm发射峰,所得激发光谱由O2-→Eu3+电荷迁移带(200～350 nm)和f-f高能级跃迁吸收带(350～450 nm)组成,主峰为397 nm.Eu3+离子的最佳掺杂浓度为5%(摩尔分数);浓度猝灭机制为电偶极-电偶极相互作用.添加电荷补偿剂Li+,Na+,K+或Cl-后,可提高KCaPO4:Eu3+材料的发射强度,其中以添加Li+时,效果最明显.     

1,3-二苯基-2-吡唑啉纳米带的制备及其光波导性质

以1,3-二苯基-2-吡唑啉(DP)为目标化合物, 利用再沉淀方法, 以混合溶剂作为不良溶剂, 制备了形貌均一、宽度约2 μm、厚度200 nm和长度数十微米的一维纳米带状结构. 选区电子衍射结果证实, DP分子在纳米带中因为强的分子间π-π相互作用而沿着晶体[100]方向优势生长. 稳态光谱结果表明, DP纳米带具有不同于分子和体相材料的介观特性. 由于J-聚体在DP纳米带中优势形成, 其480 nm的发射峰与分子和体相材料相比分别红移了30和20 nm. 利用扫描近场光学显微镜进一步发现, 一维DP纳米带类似于天然的亚波长尺度谐振腔, 紫外激发DP分子发射的荧光被限域在DP纳米带中, 沿一维方向传导并在两端耦合输出.     

静电纺丝方法制备CaTiO3∶Er3+微米带及其上转换发光性质

CaTiO3:Er3+微米带由静电纺丝方法制备.用X射线衍射、傅里叶变换红外光谱、拉曼光谱、扫描电子显微镜(SEM)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HRTEM)和上转换发光表征所制备的样品.SEM和TEM测试证实所得前躯体微米带尺寸均一,烧后得到的微米带是由纳米粒子组成的.在980 nm激光激发下,CaTiO3:Er3样品发出绿光,绿光发射峰位于546 nm,可归属于Er3+离子的4S3/2 →4I15/2跃迁.当Er3+离子的掺杂浓度提高,因为Er3+离子之间的能量传递,红光发射相对于绿光发射增强.     

图案化锥形氧化锌纳米带的原位热氧化法制备与发光性质

采用光刻技术制备出图案的锌膜,所得锌膜与纯氧在700℃氧化反应10 min,在锌膜的表面上原位生长出具有图案的锥形ZnO纳米带阵列,实现了ZnO纳米带生长位置的可控生长。锌膜上得到的锥形ZnO纳米带为单晶六方纤锌矿结构,长度在1～4μm,纳米带根部和顶部的宽度分别在300～700 nm和100～300 nm。提出了锥形ZnO纳米带的可能生长机理。在波长为300nm光的激发下,发现了锌膜上锥形ZnO纳米带具有发光峰位于395 nm弱的紫外光发光和510 nm强的蓝绿光发光,它们分别起源于ZnO宽带隙的激子发射以及表面上离子化氧空位中的电子与价带中光激发的空穴之间的复合。     

Notable shift of ultraviolet intensity on Sn-doped ZnO nanostructure fabricated by sol–gel method

Sn-doped ZnO (SZO) thin films are deposited by sol–gel dip-coating method with Sn content at 0 at.% and 1–15 at.% with an increment of 2 at.%. The structure and luminescence of the films are investigated. X-ray diffraction results indicate that all the SZO samples show preferential orientation along the (002) direction, and the scanning electron microscope exhibits that the surface morphology of the films change from nanoparticles to nanorods with increasing Sn concentration. X-ray photoelectron spectroscopy reveals that Sn exists as valence of +4 in the matrix. The photoluminescence peaks at 381 and 398 nm are observed in all the samples. The ratio of intensity of peak at 381 nm to that of peak at 398 nm differed markedly. The intensity of peak at 398 nm might be due to the response for the Sn atoms, while the intensity of peak at 381 nm is probably related to the quantum size effect.     

Comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation

ZnO nanowires doped with a high concentration Ga, In, and Sn were synthesized via thermal evaporation. The doping content defined as X/(Zn + X) atomic ratio, where X is the doped element, is about 15% for all nanowires. The nanowires consist of single-crystalline wurtzite ZnO crystal, and the average diameter is 80 nm. The growth direction of vertically aligned Ga-doped nanowires is [001], while that of randomly tilted In- and Sn-doped nanowires is [010]. A correlation between the growth direction and the vertical alignment has been suggested. The broaden X-ray diffraction peaks indicate the lattice distortion caused by the doping, and the broadening is most significant in the case of Sn doping. The absorption and photoluminescence of Sn-doped ZnO nanowires shift to the lower energy region than those of In- and Ga-doped nanowires, probably due to the larger charge density of Sn.     

ZnO nanobelt arrays grown directly from and on zinc substrates: synthesis, characterization, and applications

In situ growth of ZnO nanobelt arrays from and on zinc substrates (foils and microparticles) has been accomplished by controlled thermal oxidation in the presence of oxygen. The nanobelts grow approximately perpendicular to the Zn substrate surface along the 110 direction of ZnO, which has a thickness of approximately 3-4 nm, a width tapering from about 50 to 300 nm, and a length of approximately 10-20 mum. On the basis of the structural analysis and kinetic studies, a tip-growth mechanism is proposed, which underlines the transport of Zn from the substrate to the growing tip. The ratio of UV to green photoluminescent emissions of the as-synthesized ZnO nanobelt arrays could be controlled by varying the reaction conditions. Sharp UV stimulated emission peak is also observed at moderate threshold excitation intensity ( approximately 0.7 mJ/cm(2)) showing the high quality of the ZnO nanobelts. The ZnO nanobelts array has also been tested for sensing NH(3) gas, and high sensitivity, reversibility, and rapid response have been demonstrated.     

The effects of annealing temperature on structural and optical properties of S-doped ZnO nanobelts

In this study, the effects of thermal annealing temperature on the structural and optical properties of S-doped ZnO nanobelts were investigated. The XRD pattern shows that the crystallinity of S-doped ZnO nanobelts improves with increased annealing temperature. Room temperature photoluminescence spectroscopy of the as-grown S-doped ZnO nanobelts shows no detectable ultraviolet peak with the broad peaks in the visible emission region at 480, 505, and 518 nm. A weak peak in the ultraviolet region at 383 nm appears after annealing at 400 and 600 °C. Raman spectroscopy of the sample also shows a significant change with an increase in the annealing temperature.     

Preparation and Photoluminescence of ZnO Comb-Like Structure and Nanorod Arrays

A large quantity of Zinc oxide (ZnO) comb-like structure and high-density well-aligned ZnO nanorod arrays were prepared on silicon substrate via thermal evaporation process without any catalyst. The morphology, growth mechanism, and optical properties of the both structures were investigated using XRD, SEM, TEM and PL. The resulting comb-teeth, with a diameter about 20 nm, growing along the 0001 direction have a well-defined epitaxial relationship with the comb ribbon. The ZnO nanorod arrays have a diameter about 200 nm and length up to several micrometers growing approximately vertical to the Si substrate. A ZnO film was obtained before the nanorods growth. A growth model is proposed for interpreting the growth mechanism of comb-like zigzag-notch nanostructure. Room temperature photoluminescence measurements under excitation wavelength of 325 nm showed that the ZnO comb-like nanostructure has a weak UV emission at around 384 nm and a strong green emission around 491 nm, which correspond to a near band-edge transition and the singly ionized oxygen vacancy, respectively. In contrast, a strong and sharp UV peak and a weak green peak was obtained from the ZnO nanorod arrays.     

Short-period superlattice structure of Sn-doped In(2)O(3)(ZnO)(4) and In(2)O(3)(ZnO)(5) nanowires

Two longitudinal superlattice structures of In(2)O(3)(ZnO)(4) and In(2)O(3)(ZnO)(5) nanowires were exclusively produced by a thermal evaporation method. The diameter is periodically modulated in the range of 50-90 nm. The nanowires consist of one In-O layer and five (or six) layered Zn-O slabs stacked alternately perpendicular to the long axis, with a modulation period of 1.65 (or 1.9) nm. These superlattice nanowires were doped with 6-8% Sn. The X-ray diffraction pattern reveals the structural defects of wurtzite ZnO crystals due to the In/Sn incorporation. The high-resolution X-ray photoelectron spectrum suggests that In and Sn withdraw the electrons from Zn and enhance the number of dangling-bond O 2p states, resulting in the reduction of the band gap. Photoluminescence and cathodoluminescence exhibit the peak shift of near band edge emission to the lower energy and the enhancement of green emission as the In/Sn content increases.     

砷掺杂的ZnO纳米线的发光特性

在GaAs基底上制备了高质量的直径为10～100 nm、长度约几个微米的As掺杂ZnO纳米线. 扫描电镜、EDX分析及透射电镜分析显示, ZnO纳米线具有较好的晶态结构. 对As掺杂前后的ZnO纳米线进行光学特性测量, 结果表明, ZnO纳米线在385 nm处有较强的紫外发光峰, 在505 nm左右有较弱的蓝绿发光峰; As掺杂较大地改变了ZnO纳米线的发光性质, 使本征发光峰移到393 nm处, 蓝绿发光强度有了很大程度的提高.