Nonchiral ferroelectric smectic-C films

Free-standing films of nonchiral liquid crystal compound are studied by optical reflectivity measurements. The existence of macroscopic ferroelectric properties and orientation of the tilt plane parallel to an electric field in the temperature range above the smectic-C-smectic-A bulk transition is demonstrated. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 10, 808–813 (25 May 1998)     

Anomalous orientation of ferroelectric liquid crystal films in an electric field

An anomalous orientation of ferroelectric liquid crystals in an electric field is observed. The tilt planes of the molecules are oriented in a direction parallel to the electric field. The anomalous orientation is observed in freely suspended films above the smectic-C*-smectic-A bulk phase transition temperature. The effect is explained by the appearance of giant flexoelectric polarization, 10⁴ times greater than that in bulk liquid-crystal samples, in the film. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 6, 414–418 (25 September 1997)     

Anticlinic-synclinic transitions in superthin free-standing smectic films

Anticlinic-synclinic transition was studied in superthin smectic films using polarized light reflected microscopy. The measurements were made in a compound exhibiting the mC _FI1 ^* subphase in a narrow temperature interval between antiferroelectric C _A ^* and ferroelectric SmC* phases. In films, we observed series of transitions with numbers increasing with increasing film thickness. Surface ordering leads to increasing transition temperatures with decreasing film thickness and to change of orientation of the molecular tilt plane in layers. Succession of transitions results from competition between the surface and the bulk ordering. We found that line string defects may form in a film, their orientation and collective behavior resulting from elastic deformation of molecular ordering.     

Permittivity and conductivity of triglycine sulfate films on Al/SiO2 and α-Al2O3 substrates

Triglycine sulfate (TGS) films have been prepared by evaporation from a saturated aqueous solution on substrates of fused quartz coated by a layer of thermally deposited aluminum (Al/SiO₂) and white sapphire (α-Al₂O₃) on whose surface interdigital electrodes have been deposited by photolithography. The TGS films have a polycrystalline structure made up of blocks measuring 0.1–0.3 mm (Al/SiO₂) and 0.1 × 1.0 mm (α-Al₂O₃). The polar axis in the blocks is mostly confined to the substrate plane. The temperature dependences of the capacitance and dielectric losses normal to and in the film plane have maxima at the temperature coinciding with that of the ferroelectric phase transition in a bulk crystal, T _c . The low-frequency conductivity G in TGS/Al/SiO₂ structures displays a frequency dispersion described by the relation G ∼ ω ^s (s ≈ 0.82). The conduction can be tentatively ascribed to the hopping mechanism involving localized carriers with a ground state energy of 0.8–0.9 eV. At temperatures above and below T _c , the low-frequency conductivity in TGS/α-Al₂O₃ films operates through a thermally-activated mechanism with an activation energy of 0.9–1.0 eV. At the phase transition, an additional contribution to conductivity appears in TGS/α-Al₂O₃ films with a dispersion G ∼ ω^0.5, which can be associated with domain-wall relaxation.     

The structure of ‘nearly’ ferroelectric RADP

X-ray scattering techniques have been used to study the structures of two crystals of Rb_1–x (NH₄) _x H₂PO₄ withx0.2, near to the boundary between ferroelectric and structural-glass behavior at low temperature. Below about 83K, both crystals develop shortrange incommensurate correlations with a wavevectorq0.13 a ^* which are presumably related to the glass properties. On cooling below 70 K, the crystal with the slightly larger NH ₄ ⁺ concentrationx, develops the ferroelectric structure in a small fraction of the crystal, while the bulk of the crystal retains the tetragonal structure. The other crystal transforms almost wholly to the ferroelectric phase. The transition to the ferroelectric structure shows considerable hysteresis on heating and cooling, and is spread over about 20 K. The transition is certainly of first order, and the spread in temperature may arise from concentration fluctuations. These results and the structure of the incommensurate modulations are compared with the predictions of a theoretical model for this system.     

Far infrared and phase transitions in ferroelectric materials

Abstract

A number of far infrared absorption bands are found in molecular and hydrogen-bonded crystals when there are several formula units in the primitive cell. They are very sensitive to the crystal structure and constitute a convenient probe for looking at small changes in the structure, especially at low temperatures where there is a lack of X-Ray data. As well known examples, the case of LTT (Lithium Thallium Tartrate) where the absorption band observed at 21 cm^?1 at room temperature softens down to 8 cm^?1 at the Curie temperature (T_c = 12 K), and LiNH₄SO₄ which has a phase transition at 26 K, will be considered.

It is less known that some ferroelectric crystals can be studied as very thick single crystal plates (thickness t up to 10 mm) at 4 K, and they show in some cases a far IR transmission that is much higher than expected from the study of thin plates (i.e. t = 20 μm). In fact the transmission does not decrease very much when thickness is higher than some specific value t ₀/2. The crystal is not homogeneous at 4 K. A model with a far IR absorbing surface layer (thickness t ₀/2) and a transparent bulk is a good first approximation.

At some temperature T ₀ located between liquid helium and liquid nitrogen temperatures, the center of the bulk undergoes a phase transition from the absorbing phase into the transparent one. When temperature is still lowered, the transparent phase is extended towards the surface with an incommensurate phase between the surface and the bulk.     

Soft modes and phonon interactions in studied by neutron scattering

The low frequency lattice dynamics and its relationship to the second order paraelectric-to-ferroelectric transition in Sn₂P₂S₆ is studied. The dispersion branches of the acoustic and lowest lying optical phonons in the a^*-c^* plane have been obtained in the ferroelectric phase, for x-polarized phonons. Close to the phase transition a considerable softening is found for the lowest optical mode (P_x), comparable to the behaviour observed in previous Raman investigations. As found previously in Sn₂P₂Se₆, a strong coupling between the TO(P_x) and TA(u_xz) phonons is observed, although, apparently, not strong enough to lead to an incommensurate phase. The soft TO(P_x) mode at the zone center is observed. The temperature dependence of its frequency and damping shows that the transition is not entirely displacive. At low temperatures an unusual apparent negative LO-TO splitting is observed which is shown to arise from the coupling of the x-polarized soft mode to the nearby z-polarized optical phonon. For comparison, the soft TO(P_x) dispersion in the a^*-b^* plane is measured in both the paraelectric and ferroelectric phases. Consistent frequency changes and LO-TO splitting are observed, revealing a significant interaction between the TA(u_yx) and LA(u_xx) acoustics branches and the TO and LO soft optic branches, respectively. In contrast, the nearby y-polarized optic branch shows almost no temperature dependence. Finally, the influence of piezoelectric effects on the limiting acoustic slopes in the ferroelectric phase is discussed. Received: 11 May 1998 / Revised and Accepted: 15 June 1998     

Dynamical behavior of the phase transition of strained from atomistic simulations

Using an atomistic shell model we study the temperature dependence of the ferroelectric properties of BaTiO₃ under biaxial compressive strain applicable to growth on perovskites substrate. Molecular dynamics simulations show a “r→c→p” sequence of phase transitions when temperature is increased, and the absence of an “ac phase”. The first-order paraelectric-to-ferroelectric phase transition presents in bulk changes to a second-order one as a consequence of the in-plane constraint imposed by the mechanical boundary conditions. From the tetragonal ferroelectric c phase, the transition takes place in a finite range of temperature where the lattice parameter normal to the plane keeps approximately constant until T_c is reached. Analysis of the local polarization behavior reveals an order–disorder dynamics as the dominant mechanism of the transition.     

Electroclinic effect in free-standing smectic elastomer films

The coupling of the mesogenic tilt in smectic liquid crystals to external electric fields in the layer plane (electroclinic effect) provides an opportunity to control the smectic layer thickness with electric fields. In ordered ferroelectric smectic elastomers it is possible to achieve a macroscopic electromechanical response. The effect is particularly pronounced near the smectic A-to-smectic C^* phase-transition temperature. In this work, the electrostriction of weakly cross-linked smectic elastomers is studied by means of optical interferometry of thin films. Its observed magnitude corresponds to an induced tilt of approximately 7.7°, yielding a layer contraction of 1%, in a 3 MV/m electric field. This value is in agreement with earlier measurements of tilt susceptibility in a structurally similar polymer, but is considerably smaller than previously reported data on elastomers with a comparable chemical structure. PACS 61.30.Vx; 83.80.Va; 77.65.Bn     

Phase transition to anticlinic texture in free-standing smectic c films

Experimental data on the optical reflectance of free-standing smectic C films were analyzed within the framework of a phenomenological Landau approach. At a certain temperature T _0N (determined from experimental data), which exceeds the known temperature T _c of the volume phase transition from smectic A to smectic C state, a surface phase transition takes place whereby molecules in the surface layer become sloped relative to the normal of the smectic layers. The transition temperatures T _0N ^s,a for N-layer films possessing synclinic (symmetric) and anticlinic (antisymmetric) textures of the order parameter (tilt angle θ) were determined. A comparison of the theoretical and experimental data allowed all parameters of the model to be determined (including critical indices of the correlation length and the surface order parameter). Three possible models of the transition from the state with transverse polarization (perpendicular to the molecular tilt plane) to the state with longitudinal polarization (parallel to this plane) are analyzed. The transition takes place at low (°–°) values of the order parameter θ in the middle layer of the film.     

Dielectric relaxation in the weak ferroelectric Li2Ge7O15 near the ferroelectric phase transition

The dielectric permittivity of Ni-doped Li₂Ge₇O₁₅ crystals was studied in the vicinity of the ferroelectric phase transition. Introduction of Ni has been shown to suppress the dielectric anomaly and to reduce substantially the transition temperature. A temperature hysteresis in ɛ (T) has been observed in nominally pure and Ni-doped Li₂Ge₇O₁₅ crystals near the transition point. Measurements performed under cooling from the paraphase reveal dispersion of dielectric permittivity at Debye relaxation frequencies of the order of 10⁴–10⁵ Hz at T _c . It is proposed that the hysteresis phenomena and the low-frequency dispersion are caused by residual defects (of the type of random local fields), which become polarized in the ferroelectric phase and become disordered above T _c . Fiz. Tverd. Tela (St. Petersburg) 40, 2198–2201 (December 1998)     

Phase transitions in barium–strontium titanate films on MgO substrates with various orientations

A comparative study of the lattice dynamic upon phase transitions in a polycrystalline Ba_0.8Sr_0.2TiO₃ (BST) film on a Pt substrate and in epitaxial BST films grown on various sections of an MgO substrate has been performed by Raman spectroscopy. It has been found that different sequences of phase transitions take place in these films. The BST/Pt films demonstrate the same sequence of phase transitions that is observed in the bulk ceramics. The hardening of a soft mode in BST/(001)MgO and BST/Pt films shows that the transition from the tetragonal ferroelectric phase to the paraelectric phase has features of the displacement-type phase transition and also the order–disorder phase transition. When approaching the ferroelectric transition temperature, the soft mode in the BST/(111)MgO film is softened, following the Cockran law, which indicates the displacement-type phase transition.     

Molecular-statistical approach to a behavior of ferroelectric,antiferroelectric and ferrielectric smectic phases in the electric field

The fundamental theoretical approach derived in A.V. Emelyanenko et al., Phys. Rev. E 74, 011705 (2006) is complemented by a consideration of the influence of the homogeneous electric field on Sm- C _A ^* , biaxial intermediate phases, and Sm-C ^* . The crucial role of the induced polarization is investigated for the first time. The evolution of any tilted smectic phase in the electric field is found to meet the two thresholds. The first threshold corresponds to the unwinding process, and the second one corresponds to the phase transition into the bi-domain structure of Sm-C ^* , where the tilt plane has some contribution either along or against the electric field, while the average direction may still be perpendicular to the electric field. The tilt plane in the monodomain (conventional) structure preceding the second threshold is the same in every unwound phase, and is perpendicular to the electric field. No 3D distortion in Sm- C _A ^* is predicted on application of the electric field. The entire electric-field-temperature phase diagrams including the possibility of existence of the maximal number of tilted smectic phases are plotted and compared with the experimental ones. The numerical calculations in the framework of this fundamental study are done with help of AFLC Phase Diagram Plotter software developed by the author and available at his web page.     

Thermal conductivity of thermoelectric Al‐substituted ZnO thin films

ZnO:Al thin films with a low electrical resistivity were grown by magnetron sputtering on sapphire substrates. The cross‐plane thermal conductivity (κ = 4.5 ± 1.3 W/mK) at room temperature is almost one order of magnitude lower than for bulk materials. The thermoelectric figure of merit ZT at elevated temperatures was estimated from in‐plane power factor and the cross‐plane thermal conductivity at room temperature. It is expected that the thermal conductivity drops with increasing temperature and is lower in‐plane than cross‐plane. Consequently, the thin film ZT is at least three times higher than for bulk samples at intermediate temperatures. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film

By modifying the interchange interactions and the transverse fields on the epitaxy surface layer,this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green’s function technique based on the transverse Ising model with a four-spin interaction.The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green’s function.The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer.The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed.     

Coexistence of the relaxor-like and ferroelectric behavior in K1-xLixTaO3

ABSTRACT

The results of low-temperature linear and nonlinear susceptibilities, polarization measurements and the dc electric field dependence of the dielectric properties of the lithium-doped potassium tantalate K_1-xLi_xTaO₃, x = 0.034 (KLT-3.4%Li) solid solution are presented. The coexistence of the relaxor-like and ferroelectric behavior and different mechanisms leading to either of them are discussed. The observed ferroelectric phase transition is of the first-order type with temperature hysteresis. This transition is due to the off-center motions of Ta ions in the octahedral environment of oxygen ions. Clusters of Li⁺ ions produce a relaxor-like behavior and random electric field. This field reduces the depolarization field and allows off-center motions of Ta ions and an appearance of spontaneous polarization.     

New features from transparent thin films of EuTiO3

ABSTRACT

The almost multiferroic perovskite EuTiO₃ (ETO) has been prepared as films on substrates of SrTiO₃. For all prepared film thicknesses highly transparent insulating films with atomically flat surfaces and excellent orientation have been grown. They were characterized by X-ray diffraction, magnetic susceptibility and birefringence measurements and found to exhibit bulk properties, namely an antiferromagnetic transition at T_N = 5.1 K and a structural transition at T_S = 282 K. The latter could only be identified due to the high transparency of the samples since the optical band gap is of the order of 4.5 eV and larger than observed before for any bulk and thin film samples.     

A Raman and dielectric study of a diffuse phase transition in (Pb<Subscript>1-x</Subscript>Ca<Subscript>x</Subscript>)TiO<Subscript>3</Subscript> thin films

Dielectric and Raman scattering experiments were performed on polycrystalline Pb_1-xCa_xTiO₃ thin films (x=0.10, 0.20, 0.30, and 0.40) as a function of temperature. The results showed no shift in the dielectric constant (K) maxima, a broadening with frequency, and a linear dependence of the transition temperature on increasing Ca²⁺ content. On the other hand, a diffuse-type phase transition was observed upon transforming from the cubic paraelectric to the tetragonal ferroelectric phase in all thin films. The temperature dependence of Raman scattering spectra was investigated through the ferroelectric phase transition. The temperature dependence of the phonon frequencies was used to characterize the phase transitions. Raman modes persisted above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the local cubic symmetry due to chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands in some temperature interval above the FE–PE phase transition temperature suggested a diffuse-type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films. PACS 77.80.Bh; 77.55.+f; 78.30.-j; 77.80.-e; 68.55.-a     

Effects of strontium and calcium simultaneous substitution on electrical and structural properties of Pb1?x?yCaxSryTiO3 thin films

Ferroelectric Pb_1−x−y Ca _x Sr _y TiO₃ thin films (denoted by PCST90, PCST70, and PCST30) were deposited on the Pt/Ti/SiO₂/Si substrates by a chemical solution deposition method. Their properties were investigated from the viewpoint of crystal structure, microstructure, dielectric, and ferroelectric properties. X-ray diffraction patterns revealed the formation of PCST90, PCST70, and PCST30 thin films without any secondary phases. Infrared and Raman spectroscopy results show that a gradual phase transition from tetragonal to pseudocubic or cubic perovskite structure may occur in PCST thin films with the simultaneous increase of Ca²⁺ and Sr²⁺ contents. Both substitution of isovalent Ca²⁺ and Sr²⁺ at Pb²⁺-site enhanced the dielectric constant and reduced the remnant polarization. In addition, ferroelectric test analyses show that the PCST thin films undergo a ferroelectric-to-paraelectric phase transformation with an amount of Pb²⁺, Ca²⁺, and Sr²⁺ at 30%, 35%, and 35% mol, respectively. Hence, the absence of ferroelectric property may be attributed to a decreasing of the octahedron distortion in the perovskite structure accompanied by a weakening of long-range ferroelectric order.     

Multiferroic and magnetoelectric properties of MnFe2O4/(Pb0.8Sr0.2)TiO3 composite films

Abstract

MnFe₂O₄/(Pb_0.8Sr_0.2)TiO₃ (MFO/PST20) heterostructured composite films with three different structures have been grown on Pt/TiO₂/SiO₂/Si substrates by metal–organic decomposition processing via spin coating technique. The structural analysis revealed that the crystal axes of the MnFe₂O₄ are aligned with those of the PST20 ferroelectric matrix with obvious interfaces and no diffusions exist in all the three composite films. These composite films exhibit simultaneously multiferroic and magnetoelectric responses at room temperature. The growth structure of MFO and PST20 layers has an effect on multiferroic and magnetoelectric coupling behaviours of the composite films. The bi- and four-layered MFO/PST20 composite films exhibit superior ferroelectric properties compared to the tri-layered film. The increasing MFO and PST20 layers in the composite films enhance ferromagnetic properties and are closely related to the strain release in MnFe₂O₄ phase. The MFO/PST20 bi-layered composite film shows a high magnetoelectric voltage co-efficient α_E ~ 194 mVcm^?1Oe^?1 at a dc magnetic field H_dc ~ 2.5 kOe. A significant decrease in α_E value has been observed for tri- and four- layered composite films. A close correlation between phase selective residual stress and magnetoelectric properties has been emerged. The results are reasonably encouraging for employing MnFe₂O₄ for growing multiferroic–magnetoelectric composite films.