Dielectric nonlinearity of crystalline Li2−x NaxGe4O9 (x≈0.23)

The dielectric nonlinearity of ferroelectric Li_2−x Na_xGe₄O₉ (x≈0.23) crystals is measured in the neighborhood of the phase transition temperatures. The magnitude of the nonlinear coefficient β is estimated from the shift in T _c and the reduction in ɛ _max under the influence of E ₌, from the dielectric nonlinearity in the paraphase, and from the temperature dependence of P _s in crystalline Li_2−x Na_xGe₄O₉ (x≈0.23). The resulting values of β are 1.87, 1.26, 2.17, and 1.17×10⁻⁹ (CGSE cm²)⁻², respectively. The mechanism for the phase transition in crystalline Li_2−x Na_xGe₄O₉ (x≈0.23) is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 1070–1072 (June 1999)     

Optical second harmonic generation study of the ferroelectric phase transition in crystals and nanocrystals of lithium heptagermanate

The D _2h -C _2v ferroelectric phase transition in crystals of lithium heptagermanate Li₂Ge₇O₁₅ was revealed by the optical second harmonic generation technique. The phase transition temperature T _c was observed to shift from 10 to 6°C when the samples were doped with chromium (0.05%). No second harmonic signal was detected in the ferroelectric phase of nanocrystalline Li₂Ge₇O₁₅ samples.     

Microwave dielectric dispersion in ferroelectric telluric acid ammonium phosphate

The paper presents the results of the investigation of dielectric dispersion in monoclinic telluric acid ammonium phosphate crystal over the frequency range 1 MHz to 77 GHz. It is shown that ferroelectric dispersion of the Debye type along the direction perpendicular to the plane (101) occurs in the frequency range 10⁸ to 10¹¹ Hz and is caused by a single relaxational soft mode. The relaxational soft mode is caused by the flipping motion of protons between two potential minima in a hydrogen bond. The frequency of the flipping proton mode in the paraelectric phase varies according to v_s = 0.94 (T – T_o ) GHz and decreases to 1.75 GHz at T_c = 317.3 K. The relaxational mode gives the main contribution to the high static dielectric permittivity of this crystal which fits the Curie-Weiss law. The results confirm the order-disorder nature of a proper ferroelectric phase transition of second order.     

EPR of the ferroelectric phase transition in Li2Ge7O15:Cr3+ crystals

A Cr³⁺ EPR study of lithium heptagermanate crystals, Li₂Ge₇O₁₅ (LHG), close to the phase transition is reported. Orientation dependences of the spectra in the paraelectric phase of LHG have been measured. An anomalous broadening of the resonant lines accompanied by a crossover in their shape was found in the vicinity of the transition point. Doublet splitting of the EPR lines was observed to occur below T _C as a result of emergence of two structurally nonequivalent positions for Cr³⁺ ions. Fiz. Tverd. Tela (St. Petersburg) 40, 1102–1105 (June 1998)     

Microwave study of the soft ferroelectric mode in Sn2P2S6 crystals

This paper presents the results of the investigation of dielectric dispersion in semiconductive ferroelectric Sn₂P₂S₆ crystals over the frequency range 1 kHz to 78.5 GHz. The main dielectric dispersion in Sn₂P₂S₆ is caused by the soft ferroelectric B_u mode and in the vicinity of the Curie point it occurs in the millimeter region. The frequency of the soft mode in the paraelectric phase varies according to v_s = 35 (T-T_c )^½ GHz on approaching the Curie point. The soft mode is strongly overdamped. Close to T_c the relative damping is y/v_s = 14. The dielectric contribution of the soft mode is equal to the static dielectric permittivity and it explains its whole temperature-dependence.     

Effect of γ irradiation on the hysteresis phenomena at the incommensurate-commensurate phase transition in Rb2ZnBr4

The effect of γ irradiation on the temperature hysteresis in dielectric permittivity ɛ and loss tangent tan δ of crystalline Rb₂ZnBr₄ has been studied in the vicinity of the incommensurate-commensurate phase transition. The ɛ(T) and tan δ(T) curves were found to exhibit anomalies in the form of maxima. Hysteresis was observed in the measured properties, including the transition temperature T _c (ΔT=T _c ^h −T _c ^c ), in both unirradiated and irradiated samples. It is shown that, as the radiation dose increases the extent of the hysteresis ΔT increases, the values of ɛ _max and tan δ _max at the transition point decrease, and the anomalies wash out. Fiz. Tverd. Tela (St. Petersburg) 40, 1911–1914 (October 1998)     

Phase transition and dielectric properties of Li2-x NaxGe4O9 crystals (0.2 ≤ x ≤ 0.3)

The dielectric nonlinearity of ferroelectric Li_2-x Na_xGe₄O₉ crystals (0.2 ≤ x ≤ 0.3) is measured in the region of the phase transition temperatures. The ?(T) dependences for various values of the applied dc electric field E ₌ and the ?(E ₌)_T dependences at a constant temperature are studied in the Li_2-x Na_xGe₄O₉ crystals with T _c > 300 K and T _c < 300 K. It is shown that the Landau theory for second-order phase transitions describes the dielectric properties of the crystals with T _c < 300 K and does not describe the behavior of the crystals with T _c > 300 K. The results obtained lead to the conclusion that the different properties of the crystals with T _c > 300 K are likely to be related to the changed structure of these crystals caused by a change in the ratio between the Li and Na atoms.     

Phase separation with charge self-organization in the Tb0.95Bi0.05MnO3, Gd0.75Ce0.25Mn2O5, and Eu0.8Ce0.2Mn2O5 manganite multiferroics

New doped manganite multiferroics Tb_0.95Bi_0.05MnO₃, Gd_0.75Ce_0.25Mn₂O₅, and Eu_0.8Ce_0.2Mn₂O₅, which are semiconductors, have been grown and studied. The starting dielectric multiferroics TbMnO₃ and RMn₂O₅ (R = Gd and Eu) have close magnetic and ferroelectric ordering temperatures of 30–40 K. The crystals studied are multiferroics in which states with giant permittivity and ferromagnetism coexist at room temperature. An analysis of the dielectric properties suggests that, at temperatures T ≥ 180 K, these crystals undergo a phase separation involving dynamic periodic alternation of quasi-2D layers of mixed-valence manganese ions, a process accounting for the onset of charge-induced ferroelectricity. At low temperatures (T < 100 K), a small phase volume in the crystals is occupied by as-grown quasi-2D layers containing dopants and carriers. Most of the crystal volume is occupied by the carrier-free dielectric phase. Thermally activated hopping conduction involving carrier self-organization in the crystal matrix with ferroelectric frustrations drives a phase transition to the state of charge-induced ferroelectricity at T ∼ 180 K. Original Russian Text ? V.A. Sanina, E.I. Golovenchits, V.G. Zalesskiĭ, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 5, pp. 874–882.     

Relaxor behaviour in PZN-PT-BT ferroelectric ceramics

The relaxor behaviour of the (Pb_0.8Ba_0.2)[(Zn_1/3Nb_2/3)_0.7Ti_0.3]O₃ ferroelectric ceramic is presented. A strong dispersion of the maximum of the dielectric permittivity (ε′) below the transition temperature (T_m) is observed, which shift towards higher temperatures with increasing frequency. There is a strong deviation from the Curie-Weiss law. The results are fitted by using the Volger-Fulcher relationship, showing typical behaviour of a spin glass system. The hysteresis loops suggest relaxor behaviour.     

Polarization properties of Li2−x Na x Ge4O9 (0.2 ≤ x ≤ 0.3) crystals

The polarization switching in sinusoidal fields and the pyroelectric properties of Li_2?x Na _x Ge₄O₉ (0.2 ≤ x ≤ 0.3) crystals are measured in the temperature range T _c ?T ≤ 40 K. The behavior of the P?E hysteresis loops with variations in temperature is investigated for crystals with phase transition temperatures T _c < 300 K and T _c > 300 K. It is shown that, for crystals with phase transition temperatures T _c < 300 K, the temperature dependence of the hysteresis loop exhibits a behavior typical of crystals with second-order phase transitions. The crystals with phase transition temperatures T _c > 300 K are characterized by double hysteresis loops in the temperature range T _c ?T ₁ ≈ 30 K. The correlation between the polarization properties and possible structural transformations of the Li_2?x Na _x Ge₄O₉ crystals due to the change in the concentration ratio of Na and Li ions is discussed.     

Electric-field influence on the neutron diffuse scattering near the ferroelectric transition of Sr0.61Ba0.39Nb2O6

ABSTRACT

Uniaxial relaxor ferroelectric Sr_0.61Ba_0.39Nb₂O₆ single crystal has been investigated in the vicinity of its phase transition using neutron scattering and dielectric spectroscopy. A global-type thermal hysteresis is evidenced by both techniques in the ferroelectric phase and up to about 15 K above T_c. In addition, a part of the transverse neutron diffuse scattering in the 001 Brillouin zone, presumably related to static nanodomain structure, can be suppressed by prior poling the crystal in electric field of 3 kV/cm. The remaining part of the transverse neutron diffuse scattering and the real part of permittivity show a similar temperature dependence. The temperature position of the maximal scattering intensity T_max depends significantly on the scattering wave vector. T_max shifts monotonically to higher temperature with the increasing wave vector in all investigated cooling and heating regimes. It is concluded that the critical fluctuations have space correlations which depend on frequency and wave vector.     

Phase transitions in ultrathin ferroelectric polymer films and nanocrystals

The dielectric dispersion of nanocrystals of vinylidene fluoride—trifluoroethylene copolymer of 70/30 composition was investigated. A phase transition was revealed in ferroelectric nanocrystals at T = 100°C. A wide temperature hysteresis was observed, indicating a first-order phase transition.     

Specific features of the formation of the ferroelectric phase in polytypes of TlGaSe2 crystals

The polytypism of layered crystals of thallium gallium diselenide TlGaSe₂ has been found to substantially affect the temperature of phase transformations and the mechanism of formation of the polar state in these ferroelectrics. In particular, it is shown that the phase transition observed in the C-TlGaSe₂ polytype is an improper ferroelectric phase transition occurring at a temperature T _c ≈ 108 K, whereas the phase transition observed in the 2C-TlGaSe₂ polytype is a proper ferroelectric phase transition occurring at a higher temperature T _c ≈ 111 K. It is concluded that the elucidation of the polytype of a particular sample is a necessary stage of investigation of the TlGaSe₂ crystals.     

Iminodiacetic acid doped ferroelectric triglycine sulphate crystal: Crystal growth and characterization

Single crystals of iminodiacetic acid (HN(CH₂COOH)₂) doped triglycine sulphate (IDATGS) crystals have been grown from aqueous solution containing 1-10 mol% of iminodiacetic acid at constant temperature by slow evaporation technique. The effects of different amounts of doping entities on the growth habit have been investigated. X-ray powder diffraction pattern for pure and doped TGS was collected to determine the lattice parameters. The grown crystals were subjected to Fourier transform infrared (FTIR) spectroscopy studies to find the presence of various functional groups qualitatively. The dielectric permittivity has been studied as a function of temperature. An increase in the transition temperature (49.2-49.7 °C) of IDATGS crystals is observed. The dielectric constant (ε′_max) of IDATGS crystals vary in the range 922-2410 compared to pure TGS (T_c=49.12 °C and ε′_max=3050). Curie Weiss constants C_p and C_f in the paraelectric and ferroelectric phases were determined. The transition temperature (T_c) is found to decrease with increase in dopant concentration. P-E hysteresis studies show the presence of internal bias field in the crystal. Piezoelectric measurements were also carried out at room temperature. Domain patterns on b-cut plates were observed using scanning electron microscope. The micro hardness studies reveal that the doped crystals are harder than the pure TGS crystals. The low dielectric constant, higher transition temperature, internal bias field and hardness suggest that IDATGS crystals could be a potential material for IR detectors.     

Anomalous properties of crystals with ferroelectric phase transition induced by off-center ions

It is given the theoretical study of some properties of strongly polarizable dielectric crystals in which off-center impurity ions induce ferroelectric phase transition. The spontaneous polarization, transition temperature, soft mode frequency, dielectric susceptibility, ultrasonic attenuation, nuclear spin-lattice relaxation are analyzed. The theory explains observed in K_1?xLi_xTaO₃ saturation of remanent polarization with off-center Li⁺ concentration increasing, close to $\text{x}$ dependence of phase transition temperature, the anisotropy of ultrasonic attenuation, the absence of anomalies of Li nuclear spin-lattice relaxation rate near T_c.     

Effect of an organic dye on the ferroelectric phase transition in KH2PO4 (KDP)

This paper reports on the first measurement of the dielectric permittivity and heat capacity of a KDP crystal doped by Chicago Sky Blue organic dye within a temperature interval including the ferroelectric phase transition at T _c =122 K. Similar measurements were made on a pure KDP crystal under the same conditions for the sake of comparison. The heat capacities of the pure and doped crystals were shown to differ substantially within an interval 1 K wide in the vicinity of T _c , where an anomaly in the heat capacity of the doped crystal was observed to wash out without producing any change in the temperature position of its maximum. The doping reduces the permittivity in the polar phase markedly. The observed effects are associated with the influence of nonisomorphic defects on the ferroelectric phase transition in a piezoelectric crystal.     

Permittivity and conductivity of triglycine sulfate films on Al/SiO2 and α-Al2O3 substrates

Triglycine sulfate (TGS) films have been prepared by evaporation from a saturated aqueous solution on substrates of fused quartz coated by a layer of thermally deposited aluminum (Al/SiO₂) and white sapphire (α-Al₂O₃) on whose surface interdigital electrodes have been deposited by photolithography. The TGS films have a polycrystalline structure made up of blocks measuring 0.1–0.3 mm (Al/SiO₂) and 0.1 × 1.0 mm (α-Al₂O₃). The polar axis in the blocks is mostly confined to the substrate plane. The temperature dependences of the capacitance and dielectric losses normal to and in the film plane have maxima at the temperature coinciding with that of the ferroelectric phase transition in a bulk crystal, T _c . The low-frequency conductivity G in TGS/Al/SiO₂ structures displays a frequency dispersion described by the relation G ∼ ω ^s (s ≈ 0.82). The conduction can be tentatively ascribed to the hopping mechanism involving localized carriers with a ground state energy of 0.8–0.9 eV. At temperatures above and below T _c , the low-frequency conductivity in TGS/α-Al₂O₃ films operates through a thermally-activated mechanism with an activation energy of 0.9–1.0 eV. At the phase transition, an additional contribution to conductivity appears in TGS/α-Al₂O₃ films with a dispersion G ∼ ω^0.5, which can be associated with domain-wall relaxation.     

Proton conductivity and ferroelectric phase transition in hydrogen-bonded ferroelectric NH4IO3

We report on the ac dielectric permittivity (ε) and the electric conductivity (σ_ω), as function of the temperature 300?K?T4IO₃. The main feature of our measured parameters is that, the compound undergoes a ferroelectric phase transition of an improper character, at (368?±?1)K from a high temperature paraelectric phase I (Pm2₁ b) to a low temperature ferroelectric phase II (Pc21n). The electric conduction seems to be protonic. The frequency dependent conductivity has a linear response following the universal power law (σ_{( ω )}?=?A(T)ω ^{s (T)}). The temperature dependence of the frequency exponent s suggests the existence of two types of conduction mechanisms.     

Propagation of nonequilibrium phonons in ferroelectric ceramics and single crystals

Phonon transport in ferroelectric ceramics and single crystals has been experimentally investigated. Our measurements indicate that, in the temperature range 1.7–3.8 K studied, the effective phonon diffusion coefficient behaves as D _eff∞T ⁻⁵ in ferroelectrics with a broadened phase transition. This experimental dependence is in accord with the presence of a plateau in the thermal conductivity of such materials. The scattering by domain walls in BaTiO₃ single crystals has been identified, and our results are in quantitative agreement with calculations. Zh. éksp. Teor. Fiz. 115, 624–631 (February 1999)     

Enhancement of dielectric and ferroelectric properties in ferroelectric superlattices

I studied theoretically the enhancement of remanent polarization and dielectric permittivity of interfacial-coupled ferroelectric superlattices based on the Landau–Ginzburg theory. Our model adopts the Landau–Khalatnikov equation to describe hysteresis behavior and takes the time-dependent space-charge-limited conductivity into account to investigate the ferroelectric and dielectric properties of ferroelectric superlattices. The results are in good agreement with recent experimental observations on the enhancement of remanent polarization and permittivity of BaTiO₃/SrTiO₃ superlattices and heterolayered Pb(Zr,Ti)O₃ thin films.