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1.
A quinoidal small‐molecule semiconductor QDPPBTT was synthesized. Organic thin‐film transistor (OTFT) devices based on QDPPBTT showed an electron mobility as high as 0.13 cm2 V?1 s?1 and Ion/Ioff ratio of 106 under ambient conditions. We suggested that 2D extended π‐conjugation and quinoid‐enhancing effect had an important role in electron mobility and stability of n‐type FET devices, which might be a good strategy in designing new material systems.  相似文献   

2.
A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and p‐channel OTFT transport with hole mobilities as high as ~0.12 cm2 V?1 s?1 are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.  相似文献   

3.
2,3‐Dimethylpentacene (DMP) and 2,3‐dimethyltetracene (DMT) were synthesized, characterized and employed as the channel material in the fabrication of thin‐film transistors. The two methyl groups increase the chemical stability of the compounds versus the pristine acene analogues. The crystals maintain herringbone‐like molecular packing, whereas the weak dipole associated with the unsymmetrical molecule induces an anti‐parallel alignment among the neighbors. This structural motif favors layered film growth on SiO2/Si surface. Thin film transistors prepared on SiO2/Si and n‐nonyltrichlorosilane‐modified SiO2/Si at different substrate temperatures were compared. DMP‐based transistors prepared on rubbed n‐nonyltrichlorosilane‐modified SiO2/Si substrate gave the highest field‐effect mobility of 0.46 cm2/Vs, whereas DMT‐based transistor gave a mobility of 0.028 cm2/Vs.  相似文献   

4.
We investigated the effects of the multilayer polymer‐clay nanohybrid passivation films on the stability of pentacene organic thin‐film transistors (OTFTs) exposed to air and UV irradiation. Well‐ordered multilayer films were deposited by the spin‐assisted layer‐by‐layer assembly method using photocrosslinkable poly(vinyl alcohol) with the N‐methyl‐4(4′‐formylstyryl)pyridinium methosulfate acetal group (SbQ‐PVA) and Na+‐montmorillonite in a water‐based solution process. When photocrosslinked, these SbQ‐PVA/clay multilayers were found to serve as excellent barriers to O2 and UV‐light. Moreover, when used as passivation layers, they enhanced the stability of pentacene OTFT devices exposed to air and UV radiation.  相似文献   

5.
An ultrathin poly(methyl methacrylate) (PMMA) buffer layer was developed to improve the performance of n‐channel organic thin‐film transistors (OTFTs). The 8 nm‐thick PMMA film, prepared by spin‐coating, provided a very smooth surface and a uniform coverage on SiO2 surface reproducibly, which was confirmed by X‐ray reflectivity (XR) measurement. Then, we fabricated N,N′‐ditridecyl‐3,4,9,10‐perylenetetracarboxylic diimide (PTCDI‐C13) thin‐film transistors with and without this 8 nm‐thick PMMA insulating layer on SiO2 gate insulators and achieved one‐order increase of field‐effect mobility (up to 0.11 cm2/(Vs) in a vacuum), one‐half decrease of threshold voltage, and reduction of current hysteresis with the PMMA layer. Only TFTs with the PMMA layer displayed n‐channel operation in air and showed field‐effect mobility of 0.10 cm2/(Vs). We consider that electrical characteristics of n‐channel OTFTs were considerably improved because the ultrathin PMMA film could effectively passivate the SiO2 insulator surface and decrease interfacial electron traps. This result suggests the importance of the ultrathin PMMA layer for controlling the interfacial state at the semiconductor/insulator interface and the device characteristics of OTFTs. Copyright © 2009 John Wiley & Sons, Ltd.  相似文献   

6.
Graphene is of considerable interest as a next‐generation semiconductor material to serve as a possible substitute for silicon. For real device applications with complete circuits, effective n‐type graphene field effect transistors (FETs) capable of operating even under atmospheric conditions are necessary. In this study, we investigated n‐type reduced graphene oxide (rGO) FETs of photoactive metal oxides, such as TiO2 and ZnO. These metal oxide doped FETs showed slight n‐type electric properties without irradiation. Under UV light these photoactive materials readily generated electrons and holes, and the generated electrons easily transferred to graphene channels. As a result, the graphene FET showed strong n‐type electric behavior and its drain current was increased. These n‐doping effects showed saturation curves and slowly returned back to their original state in darkness. Finally, the n‐type rGO FET was also highly stable in air due to the use of highly resistant metal oxides and robust graphene as a channel.  相似文献   

7.
Electrodeposition of Si films from a Si‐containing electrolyte is a cost‐effective approach for the manufacturing of solar cells. Proposals relying on fluoride‐based molten salts have suffered from low product quality due to difficulties in impurity control. Here we demonstrate the successful electrodeposition of high‐quality Si films from a CaCl2‐based molten salt. Soluble SiIV−O anions generated from solid SiO2 are electrodeposited onto a graphite substrate to form a dense film of crystalline Si. Impurities in the deposited Si film are controlled at low concentrations (both B and P are less than 1 ppm). In the photoelectrochemical measurements, the film shows p‐type semiconductor character and large photocurrent. A p–n junction fabricated from the deposited Si film exhibits clear photovoltaic effects. This study represents the first step to the ultimate goal of developing a cost‐effective manufacturing process for Si solar cells based on electrodeposition.  相似文献   

8.
A new material has been prepared by covalent attachment of a perylene derivative, N‐(carboxyphenyl)‐N′‐(8‐pentadecyl)perylene‐3,4:9,10‐bis(dicarboximide) (PDI‐COOH), to poly(vinyl alcohol) (PVA) by esterification. The perylenediimide (PDI)‐modified PVA polymers are soluble in water and dimethylsulfoxide (DMSO). This solubility is conferred to the insoluble perylene derivative by the water‐soluble polymer. The materials have been characterized by hydrogen‐nuclear magnetic resonance, Fourier transform infrared spectra, X‐ray diffraction, and X‐ray photoelectron spectroscopy confirming the covalent attachment of the PDI to the polymer chains. The significant changes in the crystalline parameters and the thermal stability observed for the polymer after the esterification also confirm the covalent linkage with PDI. In addition, the PDI‐modified PVA shows good fluorescence both in solution (quantum yield ~0.2–0.25) and in solid suggesting that the PDI retains largely its photochemical and photophysical properties after immobilization. © 2010 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 48: 3613–3622, 2010  相似文献   

9.
A facile and template‐free method is reported to synthesize a new thin film structure: polyaniline (PANI) film/nanotubes (F/N) structure. The PANI F/N is a 100‐nm thick PANI film embedded with PANI nanotubes. This well‐controlled method requires no surfactant or organic acid as well as relatively low concentration of reagents. Synthesis condition studies reveal that aniline oligomers with certain structures are responsible for guiding the growth of the nanotubes. Electrical characterization also indicates that the PANI F/N possesses similar field‐effect transistor characteristics to bare PANI film. With its 20% increased surface‐area‐to‐volume (S/V) ratio contributed by surface embedded nanotubes and the excellent p‐type semiconducting characteristic, PANI F/N shows clear superiority compared with bare PANI film. Such advantages guarantee the PANI F/N a promising future toward the development of ultra‐high sensitivity and low‐cost biosensors © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2017 , 55, 3973–3979  相似文献   

10.
Ultra‐small Pd nanoparticles (UNPs) represent a distinctive type of nanomaterial making them very attractive for a range of applications. Herein, chiral sugar‐substituted N‐heterocyclic carbenes (NHCs) with various lengths of alkyl chain (sugar‐NHCs‐nCnH2n+1) were first used to prepare water‐soluble Pd@NHCs‐sugar UNPs via an efficient ligand‐exchange strategy, which can be handled under air and are stable over 10 months. The Pd@NHCs‐sugar UNPs were highly monodisperse, with tunable core diameters from 1.7 to 2.1 nm, and an effect of the particle size on the N‐substituted aliphatic chains was observed. To investigate the accessibility of the surface, the Pd@NHCs‐sugar UNPs were studied as catalysts for C–C coupling reaction in eco‐friendly ethanol aqueous solution without any precipitation of metallic Pd. The presence of the longest aliphatic group in the Pd@NHCs‐sugar UNPs imparts to them the highest catalyst activity (turnover number and turnover frequency up to 196 000 and 3 920 000 h?1).  相似文献   

11.
A signal‐enhanced label‐free electrochemical immunosensor was constructed by the employment of Prussian blue doped silica dioxide (PB‐SiO2) nanocomposite. At first, PB‐SiO2 nanocomposite which was produced by using a microemulsion method was used to obtain a nanostructural monolayer on a glassy carbon electrode (GCE) surface. Next amino‐functionalized interface were prepared by self‐assembling 3‐aminopropyltriethoxy silane (APTES) on the PB‐SiO2 nanoparticle surface. Then chitosan stabled gold nanoparticle (CS‐nanoAu) was subsequently attached, while the entire surface was finally loaded with neuron‐specific enolase antibody (anti‐NSE) via the adsorption of gold nanoparticle. The sensitivity of the proposed immunosensor has greatly improved as the PB‐SiO2 nanostructural sensing film provides plenty of active sites which might catalyze the reduction of H2O2. The immunosensor exhibited good linear behavior in the concentration range from 0.25–5.0 and 5.0–75 ng/mL for the quantitative analysis of neuron‐specific enolase (NSE), a putative serum marker of small‐cell lung carcinoma (SCLC), with a limit of detection of 0.08 ng/mL. The resulting NSE immunosensor showed high sensitivity and long‐term lifetime which can be attributed to the extremely high catalytic activity and biocompatibility of CS‐nanoAu/APTES/PB‐SiO2 nanostructural multilayers.  相似文献   

12.
An organic semiconductor–bacteria biohybrid photosynthetic system is used to efficiently realize CO2 reduction to produce acetic acid with the non‐photosynthetic bacteria Moorella thermoacetica. Perylene diimide derivative (PDI) and poly(fluorene‐co‐phenylene) (PFP) were coated on the bacteria surface as photosensitizers to form a p‐n heterojunction (PFP/PDI) layer, affording higher hole/electron separation efficiency. The π‐conjugated semiconductors possess excellent light‐harvesting ability and biocompatibility, and the cationic side chains of organic semiconductors could intercalate into cell membranes, ensuring efficient electron transfer to bacteria. Moorella thermoacetica can thus harvest photoexcited electrons from the PFP/PDI heterojunction, driving the Wood–Ljungdahl pathway to synthesize acetic acid from CO2 under illumination. The efficiency of this organic biohybrid is about 1.6 %, which is comparable to those of reported inorganic biohybrid systems.  相似文献   

13.
New cross‐linking reagents were synthesized and mixed with polystyrene (PS) in solution to form a blend. Thin‐films were spin‐coated from the blend and then cross‐linked by thermal activation at relatively low temperature (100 °C) to form cross‐linked gate dielectrics. This new method is compatible with plastic substrates in flexible electronics. The azide and alkyne cross‐linking reagents are kinetically stable at room temperature, so any premature cross‐linking is avoided during processing. This method also significantly improved the dielectric performances of PS thin films. Solution‐processed top‐gate organic field‐effect transistor devices with indacenodithiophene–benzothiadiazole copolymer as semiconductor layer and the cross‐linked PS blend as dielectric layer showed improved performances with lower gate leakages and higher operation stabilities than devices with neat PS film as dielectric layer.  相似文献   

14.
Highly luminescent SiO2 particles impregnated with CdTe nanocrystals (NCs) are prepared by a sol–gel procedure. Partial ligand exchange from thioglycolic acid to 3‐mercaptopropyltrimethoxysilane (MPS) on the NCs enables retention of the initial photoluminescence (PL) efficiency of the NCs in water, while the simultaneous addition of a poor solvent (ethanol) results in regulated assembly of the NCs through condensation of hydrolyzed MPS. The SiO2 particles thus prepared have, for example, a diameter of 16 nm and contain three NCs each. The PL efficiency of these particles is 40 %, while the initial efficiency is 46 % in a colloidal solution. The redshift and narrowed spectral width in PL observed after impregnation indicate that the concentration of NCs in these nearly reaches the ultimate value (on the order of 1021 particles per liter). The porosity of these particles is investigated by means of N2 adsorption–desorption isotherms. Due to the SiO2 shell, these particles have higher stability in phosphate‐buffered saline buffer solution than the initial NCs. Their potential use for labeling in bio‐applications is investigated by conjugating biotinylated immunoglobulin G to them by using streptavidin maleimide as linker. Successful conjugation is confirmed by electrophoresis in agarose gel. This preparation method is an important step towards fabricating intensely emitting biocompatible SiO2 particles impregnated with semiconductor NCs.  相似文献   

15.
In this study, interaction of tetracycline (TC) and DNA in the Britton? Robinson buffer solution (BR) was studied by cyclic voltammetry. The experimental results reveal that TC can bind strongly to DNA and the association constant and binding number between TC and DNA was obtained. Then DNA was immobilized on a glassy carbon electrode by UV‐irradiation. Through this process, water‐soluble DNA was converted into insoluble materials, and a stable DNA film was formed on the electrode. The electrochemical oxidation behavior of TC was studied at UV‐irradiated DNA film modified glassy carbon electrode (UV‐DNA‐GCE). The response of modified electrode was optimized with respect to pH, accumulation time, ionic strength, drug concentration and other variables. TC at the surface of modified electrode showed a linear dynamic range of 0.30–90.00 µM and a detection limit of 0.27 µM. To demonstrate the applicability of the modified electrode, it was used for the analysis of real samples such as pharmaceutical formulations and milk.  相似文献   

16.
Single‐walled carbon nanotube (SWNT)‐based nanohybrid compositions based on (6,5) chirality‐enriched SWNTs ([(6,5) SWNTs]) and a chiral n‐type polymer (S‐PBN(b)‐Ph4PDI) that exploits a perylenediimide (PDI)‐containing repeat unit are reported; S‐PBN(b)‐Ph4PDI‐[(6,5) SWNT] superstructures feature a PDI electron acceptor unit positioned at 3 nm intervals along the nanotube surface, thus controlling rigorously SWNT–electron acceptor stoichiometry and organization. Potentiometric studies and redox‐titration experiments determine driving forces for photoinduced charge separation (CS) and thermal charge recombination (CR) reactions, as well as spectroscopic signatures of SWNT hole polaron and PDI radical anion (PDI?.) states. Time‐resolved pump–probe spectroscopic studies demonstrate that S‐PBN(b)‐Ph4PDI‐[(6,5) SWNT] electronic excitation generates PDI?. via a photoinduced CS reaction (τCS≈0.4 ps, ΦCS≈0.97). These experiments highlight the concomitant rise and decay of transient absorption spectroscopic signatures characteristic of the SWNT hole polaron and PDI?. states. Multiwavelength global analysis of these data provide two charge‐recombination time constants (τCR≈31.8 and 250 ps) that likely reflect CR dynamics involving both an intimately associated SWNT hole polaron and PDI?. charge‐separated state, and a related charge‐separated state involving PDI?. and a hole polaron site produced via hole migration along the SWNT backbone that occurs over this timescale.  相似文献   

17.
New p‐type, n‐type, and ambipolar molecules were synthesized from commercially available 4,10‐dibromoanthanthrone dye. Substitution at the 4,10‐ and 6,12‐positions with different electron‐rich and electron‐poor units allowed the modulation of the optoelectronic properties of the molecules. A bis(dicyanovinylene)‐functionalized compound was also prepared with a reduction potential as low as ?50 mV versus Ag+ with a crystalline two‐dimensional lamellar packing arrangement. These characteristics are important prerequisites for air‐stable n‐type organic field‐effect transistor applications.  相似文献   

18.
New diketopyrrolopyrrole (DPP)‐containing amorphous conjugated polymers, such as poly(3‐(5‐((9,10‐bis((4‐hexylphenyl)ethynyl)‐6‐(prop‐1‐ynyl)anthracen‐2‐yl)ethynyl) thiophen‐2‐yl)‐5‐(2‐hexyldecyl)‐2‐(2‐octyldodecyl)‐6‐(thiophen‐2‐yl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione) ( 4 ), and poly(3‐(5‐((2,6‐bis((4‐hexylphenyl)ethynyl)‐10‐(prop‐1‐ynyl)anthracen‐9‐yl)ethynyl)thiophen‐2‐yl)‐2,5‐bis(2‐octyldodecyl)‐6‐(thio phen‐2‐yl)pyrrolo[3,4‐c]pyrrole‐1,4(2H,5H)‐dione) ( 7 ), were successfully synthesized via Sonogashira coupling reactions under microwave conditions. Copolymer 7 , incorporating a DPP moiety at the 9,10‐position of the anthracene ring through a triple bond, showed a much lower bandgap energy (Eg = 1.81 eV) than copolymer 4 (Eg = 2.13 eV). Tuning of the molecular frontier orbital energies was achieved by only changing the anchoring position of dithiophenyl‐DPP from the 2,6‐ to the 9,10‐position in the anthracene ring. Because of the donor–acceptor (D–A) interaction and the two‐dimensional planar structure of the X‐shaped donor monomer, the resulting polymers showed good interchain π?π stacking in the thin‐film state, despite being amorphous polymers. When the newly synthesized polymer 7 was used as a semiconductor material in an organic thin‐film transistor, the best mobility of up to 0.12 cm2 V?1 s?1 (Ion/off = ~ 4.4 × 106) was observed, which is one of the highest values recorded for amorphous polymer films reported to date. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012  相似文献   

19.
A new triphenylamine‐based polyamide I was prepared by direct polycondensation of AB‐type monomer, 4‐amino‐4′‐carboxy‐4″‐methoxytriphenylamine ( 4 ), in the presence of triphenyl phosphite and pyridine as condensation agents. The obtained polyamide I showed excellent solubility in aprotic polar solvents such as NMP, DMAc, DMF, and DMSO and could be cast into transparent film with weight‐average molecular weight (Mw = 63,400) and polydispersity index (PDI = 1.79). The polyamide I exhibited good thermal stability with relatively high glass‐transition temperature (282 °C), 10% weight‐loss temperature above 470 °C under a nitrogen atmosphere, and char yield at 800 °C in nitrogen higher than 64%. It also showed maximum ultraviolet‐visible absorption at 362 nm and exhibited fluorescence emission maxima at 493 nm in NMP solution with fluorescence quantum yield 4.4%. Cyclic voltammogram of polyamide I film cast onto an indium tin oxide coated glass substrate exhibited one oxidative redox couple at 0.72 V (oxidation onset potential) versus Ag/AgCl in acetonitrile solution and revealed good stability of the electrochromic characteristic with a color change from colorless to green at applied potentials ranging from 0.00 to 1.10 V. © 2009 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 47: 1988–2001, 2009  相似文献   

20.
Aligned crystallites of 1,6‐di‐(N‐carbazolyl)‐2,4‐hexadiyne (DCHD) were prepared on the phenyltrichlorosilane‐modified SiO2/Si surface using the brush‐coating method. The length and width as well as the orientation of the crystallites depend on the coating speed. At a lower coating speed of 0.2 ~ 0.3 mm/s, well‐separated fibers with a width of 1–2 μm and a length of hundreds of μm were grown along the coating direction. Higher speeds resulted in shorter fibers together with randomly oriented tiny crystallites appearing in between. The diacetylene crystallites upon UV irradiation gave polydiacetylene fibers with deformations along the fiber axis. The poly(ene‐yne) backbones were shown to align along the fiber axes. With these poly‐DCHD fibers as a conducting channel for transistor fabrication, a highest field‐effect mobility of 0.039 cm2/Vs was obtained.  相似文献   

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