Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

Crystal-Physical Model of Ion Transport in Nonlinear Optical Crystals of KTiOPO<Subscript>4</Subscript>

The ionic conductivity along the principal axes a, b, and c of the unit cell of the nonlinear-optical high-resistance KTiOPO₄ single crystals (rhombic syngony, space group Pna2₁), which are as-grown and after thermal annealing in vacuum, has been investigated by the method of impedance spectroscopy. The crystals were grown from a solution-melt by the Czochralski method. The as-grown KTiOPO₄ crystals possess a quasi-one-dimensional conductivity along the crystallographic c axis, which is caused by the migration of K⁺ cations: σ_║c = 1.0 × 10^–5 S/cm at 573 K. Wherein the characteristics of the anisotropy of ionic conductivity of the crystals is equal to σ_║c/σ_║a= 3 and σ_║c/σ_║b= 24. The thermal annealing at 1000 K for 10 h in vacuum increases the magnitude of σ_║c of KTiOPO₄ by a factor of 28 and leads to an increase in the ratio σ_║c/σ_║b= 2.1 × 10³ at 573 K. A crystal-physical model of ionic transport in KTiOPO₄ crystals has been proposed.     

CeAlO<Subscript>3</Subscript> crystals: Preparation and study of their electrical and optical characteristics

Crystals of cerium aluminate with perovskite structure were obtained using the cold-crucible technique. The electrical and optical properties of cerium aluminate were studied in air in the range 300–1300 K. The main characteristics of CeAlO₃ at T=300 K are a follows: electrical conductivity σ=10^?7 S/cm, dielectric permittivity ?=3000–10000 (both measured at a frequency of 1000 Hz), thermal band-gap width ΔE=2.3±0.5 eV, and optical width δE=2.65±0.25 eV, which decreases at a rate of ?0.62×10^?3 eV/K with increasing temperature in the 300-to 1500-K interval.     

Zeitliches Abklingen und Anisotropie von p-Terphenyl- undp-Terphenyl-Anthrazen-Mischkristallen bei Beschuß mit α-Teilchen

The time dependence of scintillation intensity from single crystals ofp-terphenyl and mixed crystals ofp-terphenyl and anthracene after bombarding with α-particles was investigated at the two temperaturesT=296 °K andT=92 °K. For the crystals ofp-terphenyl the time dependence of the scintillation anisotropy was also measured. Using the formulas given byKing andVoltz the decay curves ofp-terphenyl were decomposed into two components. Good agreement between experiment and theory was found. The ratio of the prompt intensity to the delayed intensity was determined to be 1∶2 atT=296 °K and 1∶3 atT=92 °K. The diffusion constants for triplet excitons were calculated to beD _T(296 °K)≈10^?5 cm² sec^?1 andD _T(92 °K)≈ 2×10^?6 cm² sec^?1, and the triplet-triplet interaction rate constantsχ _tt(296 °K)≈ 2.5×10^?11 cm³ sec^?1 andχ _tt(92 °K)≈0.5×10^?11 cm³ sec^?1.     

Thermopower in the region of hopping conduction in TlNiS<Subscript>2</Subscript>

Samples of the composition TlNiS₂ in the hexagonal system with the unit cell parameters a=12.28 Å, c=19.32 Å, and ρ=6.90 g/cm³ are synthesized. The results of the investigation into the electrical and thermoelectrical properties of TlNiS₂ samples in the temperature range 80–300 K indicate that TlNiS₂ is a p-type semiconductor. It is found that, at temperatures ranging from 110 to 240 K, TlNiS₂ samples in a dc electric field possess variable-range-hopping conduction at the states localized in the vicinity of the Fermi level. The density of localized states near the Fermi level is determined to be N_F=9×10²⁰ eV^?1 cm^?3, and the scatter of the states is estimated as J≈2×10^?2 eV. In the temperature range 80–110 K, TlNiS₂ exhibits activationless hopping conduction. At low temperatures (80–240 K), the thermopower of TlNiS₂ is adequately described by the relationship α(T)=A+BT, which is characteristic of the hopping mechanism of charge transfer. In the case when the temperature increases to the temperature of the onset of intrinsic conduction with the activation energy ΔE=1.0 eV, there arise majority intrinsic charge carriers of both signs. This leads to an increase in the electrical conductivity σ and, at the same time, to a drastic decrease in the thermopower α; in this case, the thermopower is virtually independent of the temperature.     

Frequency dispersion of dielectric coefficients of layered TlGaS<Subscript>2</Subscript> single crystals

Frequency dependence of the dissipation factor tanδ, the permittivity ɛ, and the ac conductivity σ_ac across the layers in the frequency range f=5×10⁴−3×10⁷ Hz was studied in layered TlGaS₂ single crystals. A significant dispersion in tanδ was observed in the frequency range 10⁶−3×10⁷ Hz. In the range of frequencies studied, the permittivity of TlGaS₂ samples varied from 26 to 30. In the frequency range 5×10⁴−10⁶ Hz, the ac conductivity obeyed the f ^0.8 law, whereas for f>10⁶ Hz σ_ac was proportional to f ². It was established that the mechanism of the ac charge transport across the layers in TlGaS₂ single crystals in the frequency range 5×10⁴−10⁶ Hz is hopping over localized states near the Fermi level. Estimations yielded the following values of the parameters: the density of states at the Fermi level N _F=2.1×10¹⁸ eV⁻¹ cm⁻³, the average time of charge carrier hopping between localized states τ=2 μs, and the average hopping distance R=103 ?. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 6, 2004, pp. 979–981. Original Russian Text Copyright ? 2004 by Mustafaeva.     

High-resolution spectroscopy of HoFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> crystal: a study of phase transitions

The transmission spectra of HoFe₃(BO₃) multiferroic single crystals are studied by optical Fourier-transform spectroscopy at temperatures of 1.7–423 K in polarized light in the spectral range 500–10 000 cm^–1 with a resolution up to 0.1 cm^–1. A new first-order structural phase transition close to the second-order transition is recorded at T_c = 360 K by the appearance of a new phonon mode at 976 cm^–1. The reasons for considerable differences in T_c for different samples of holmium ferroborate are discussed. By temperature variations in the spectra of the f–f transitions in the Ho³⁺ ion, we studied two magnetic phase transitions, namely, magnetic ordering into an easy-plane structure as a second-order phase transition at T_N = 39 K and spin reorientation from the ab plane to the c axis as a first-order phase transition at T_SR = 4.7 ± 0.2 K. It is shown that erbium impurity in a concentration of 1 at % decreases the spin-reorientation transition temperature to T_SR = 4.0 K.     

Peculiarities of magnetic,galvanomagnetic, elastic,and magnetoelastic properties of Eu<Subscript>0.55</Subscript>Sr<Subscript>0.45</Subscript>MnO<Subscript>3</Subscript>

Magnetic, elastic, magnetoelastic, transport, and magnetotransport properties of the Eu_0.55Sr_0.45MnO₃ ceramics have been studied. A break was detected in the temperature dependence of electrical resistivity ρ(T) near the temperature of the magnetic phase transformation (41 K), with the material remaining an insulator down to the lowest measurement temperature reached (ρ=10⁶ Ω cm at 4.2 K). In the interval 4.2≤T≤50 K, the isotherms of the magnetization, volume magnetostriction, and ρ were observed to undergo jumps at the critical field H_C1, which decreases with increasing T. For 50≤T≤120 K, the jumps in the above curves persist, but the pattern of the curves changes and H_C1 grows with increasing T. The magnetoresistance Δρ/ρ = (ρ _H ?ρ_H=0)/ρ _H is positive for H<H_C1 and passes through a maximum at 41 K, where Δρ/ρ = 6%. For H>H_C1, the magnetoresistance is negative, passes through a minimum near 41 K, and reaches a colossal value of 3×10⁵ % at H=45 kOe. The volume magnetostriction is negative and attains a giant value of 4.5×10^?4atH=45 kOe. The observed properties are assigned to the existence of three phases in Eu_0.55Sr_0.45MnO₃, namely, a ferromagnetic (FM) phase, in which carriers are concentrated because of the gain in s-d exchange energy, and two antiferromagnetic (AFM) phases of the A and CE types. Their fractional volumes at low temperatures were estimated to be as follows: ～3% of the sample volume is occupied by the FM phase; ～67%, by the CE-type AFM phase; and ～30%, by the A-type AFM phase.     

X-ray study of [N(CH<Subscript>3</Subscript>)<Subscript>4</Subscript>]<Subscript>2</Subscript>ZnCl<Subscript>4</Subscript> at low temperatures

The unit cell parameters a, b, and c of [N(CH₃)₄]₂ZnCl₄ have been measured by x-ray diffraction in the temperature range 80–293 K. Temperature dependences of the thermal expansion coefficients α_a, α_b, and α_c along the principal crystallographic axes and of the unit cell thermal expansion coefficient α_V were determined. It is shown that the a=f(T), b=f(T), and c=f(T) curves exhibit anomalies in the form of jumps at phase transition temperatures T₁=161 K and T₂=181 K and that the phase transition occurring at T₃=276 K manifests itself in the a=f(T) and b=f(T) curves as a break. A slight anisotropy in the coefficient of thermal expansion of the crystal was revealed. The phase transitions occurring at T₁=161 K and T₂=181 K in [N(CH₃)₄]₂ZnCl₄ were established to be first-order.     

Enhancement of pseudogap anomalies induced by nanoscale structural inhomogeneity in YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>6.93</Subscript> high-<Emphasis Type="Italic">T</Emphasis><Subscript>c</Subscript> superconductor

The magnetization M(H) in the superconducting state, dc magnetic susceptibility χ(T) in the normal state, and specific heat C(T) near the superconducting transition temperature T _c have been measured for a series of fine-crystalline YBa₂Cu₃O _y samples having nearly optimum values of y = 6.93 ± 0.3 and T _c = (91.5 ± 0.5) K. The samples differ only in the degree of nanoscale structural inhomogeneity. The characteristic parameters of superconductors (the London penetration depth and the Ginzburg–Landau parameter) and the thermodynamic critical field H _c are determined by the analysis of the magnetization curves M(H). It is found that the increase in the degree of nanoscale structural inhomogeneity leads to an increase in the characteristic parameters of superconductors and a decrease in H _c(T) and the jump of the specific heat ΔC/T _c. It is shown that the changes in the physical characteristics are caused by the suppression of the density of states near the Fermi level. The pseudogap is estimated by analyzing χ(T). It is found that the nanoscale structural inhomogeneity significantly enhances and probably even creates the pseudogap regime in the optimally doped high-T _c superconductors.     

Electrophysical parameters of <Emphasis Type="Italic">c</Emphasis>-oriented Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a low concentration of antistructural defects

Epitaxial c-oriented Bi₂Te₃ films 1.2 μm in thickness are grown by the hot wall method for a low supersaturation of the vapor phase over the surface of mica substrates. The hexagonal unit cell parameters a = 4.386 Å and c = 30.452 Å of the grown films almost coincide with the corresponding parameters of stoichiometric bulk Bi₂Te₃ crystals. At T = 100 K, the Hall concentration of electrons in the films is on the order of 8 × 10¹⁸ cm^?3, while the highest values of the thermoelectric coefficient (α ≈ 280 μV K^?1) are observed at temperatures on the order of 260 K. Under impurity conduction conditions, conductivity σ of the films increases upon cooling in inverse proportion to the squared temperature. In the temperature range 100–200 K, thermoelectric power parameter α²σ of Bi₂Te₃ films has values of 80–90 μW cm^?1 K^?2.     

Physical properties of FeSe<Subscript>0.5</Subscript>Te<Subscript>0.5</Subscript> single crystals grown under different conditions

We report on structural, magnetic, conductivity, and thermodynamic studies of FeSe_0.5Te_0.5 single crystals grown by self-flux and Bridgman methods. The lowest values of the susceptibility in thenormal state, the highest transition temperature T _c of 14.4 K, and the largest heat-capacity anomaly at T _c were obtained for pure (oxygen-free) samples. The criticalcurrent density j _c of 8.6 × 10⁴A/cm² (at 2 K) achieved in pure samples is attributed to intrinsic inhomogeneity due to disorder at the anion sites. The samples containing an impurity phase of Fe₃O₄ show increased j _c up to2.3 × 10⁵A/cm² due to additional pinning centers. The upper critical field\(H_{c2}\)of ~500 kOe is estimated from the resistivity studyin magnetic fields parallel to the c-axis using a criterion of a 50%drop of the normal state resistivity R _n . The anisotropy ofthe upper critical fieldγ _{H c2} =H ^ab _c2/H _c2 ^c reaches a value ~6 at\(T\longrightarrow T_c\). Extremely low values of the residualSommerfeld coefficient \(\gamma_r\) of about 1 mJ/mol K²,compared to the normal state Sommerfeld coefficient γ _n = 25mJ/mol K² for pure samples indicate a high volume fraction of thesuperconducting phase (up to 97%). The electronic contribution to the specific heat in thesuperconducting state is well described within a single-band BCS model with a temperature dependent gapΔ(0 K) = 27(1) K. A broad cusp-like anomaly in the electronic specific heat observed at low temperatures in samples with suppressed bulk superconductivity is ascribed to a splitting of the ground state of the Fe²⁺ ions at the 2c sites. This contribution is fully suppressed in the ordered state in samples with bulk superconductivity.     

Structural transformations of K<Subscript>3</Subscript>H(SO<Subscript>4</Subscript>)<Subscript>2</Subscript> crystals with variations in temperature

Single crystals of the K₃H(SO₄)₂ compound are investigated using X-ray diffraction on Xcalibur S and Bruker diffractometers. The structure of the low-temperature monoclinic phase is refined (space group C2/c, z = 4, a = 14.698(1) Å, b = 5.683(1) Å, c = 9.783(1) Å, β = 103.01(1)°, T = 293 K, Bruker diffractometer), the structural phase transition is revealed, and the structure of the high-temperature trigonal phase is determined (space group R \(\bar 3\) m, z = 3, a = 5.73(1) Å,c = 21.51(1) Å,T = 458 K, Xcalibur diffractometer).     

Conduction through localized states in a single crystal of the TlGa<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> alloy

Layered single crystals of the TlGa_0.5Fe_0.5Se₂ alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa_0.5Fe_0.5Se₂ crystals are estimated as follows: the density of states near the Fermi level N_F = 2.8 × 10¹⁷ eV^?1 cm^?3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R_av = 233 Å, and the concentration of deep-lying traps N _t = 3.6 × 10¹⁶ cm^?3.     

<Emphasis Type="Italic">K</Emphasis><Subscript><Emphasis Type="Italic">e</Emphasis>3</Subscript> Decay Studies in the OKA Experiment

Recent results from OKA setup concerning form factor studies in K_e3 decay are presented. About 5.25 M events obtained for decays of 17.7 GeV/cK⁺ are selected for the analysis. The linear and quadratic slopes for the decay form factor f₊(t) are measured: λ'₊ = 2.95 ± 0.022 ± 0.018 × 10 ^-2 for the linear slope fit and λ₊ = 2.611 ± 0.035 ± 0.028 × 10 ^-2, λ"₊ = 1.91 ± 0.19 ± 0.14 × 10 ^-3 for the quadratic one. The scalar and tensor contributions are compatible with zero. Several alternative parametrizations are tried: the Pole fit parameter is found to be M _V = 891 ± 3 MeV; the parameter of the dispersive parametrization is measured to be Λ₊ = 2.458 ± 0.018 × 10^-2.     

Novel superconducting niobium beryllide Nb<Subscript>3</Subscript>Be with A15 structure

New niobium beryllide Nb₃Be with A15 structure and lattice parameter a=0.5187±0.0007 nm, coexisting (3–5%) with a tetragonal phase, presumably, of an ordered solid solution with parameters a=0.5414±0.0008 nm and c=0.6378±0.0009 nm, was synthesized by thermal treatment (875–110°C) of amorphous film coatings containing 26.8–32.4 at. % Be and formed from short-period Nb and Be layers by magnetron sputtering. The domain of existence of the Nb₃Be phase and the critical superconducting transition temperature (10.0 K and a transition width of 2.5 K) were determined and the X-ray structural data for structure identification were obtained.     

Dielectric response of a (1000 nm)SrTiO<Subscript>3</Subscript> layer epitaxially grown on (001)La<Subscript>0.67</Subscript>Ca<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> to temperature variation and electric field

The structure and dielectric characteristics of the (1000 nm)SrTiO₃ spacer in a (001)SrRuO₃ ‖ (001)SrTiO₃ ‖ (001)La_0.67Ca_0.33MnO₃ trilayer heterostructure grown on a (001)(LaAlO₃)_0.3+(Sr₂AlTaO₆)_0.7 substrate have been studied. Both oxide electrodes, as well as the strontium titanate layer, were cube-on-cube epitaxially grown. The unit cell parameter in the SrTiO₃ layer measured in the substrate plane (3.908±0.003 Å) practically coincided with that determined along the normal to the substrate surface (3.909±0.003 Å). The temperature dependence of the real part of the permittivity ?′ of the SrTiO₃ layer in the range 70–180 K fits the relation (?′)^?1 ～ ? ₀ ^?1 C ₀ ^?1 (T-T _C ) well, where C₀ and T_C are the Curie constant and the Curie-Weiss temperature, respectively, for bulk strontium titanate crystals and ?₀ is the free-space permittivity. The data obtained on the temperature dependence of the permittivity of SrTiO₃ films enabled us to evaluate the effective depth of electric field penetration into the manganite electrode (L _e ≈ 0.5 nm) and the corresponding capacitance (C _e ≈1×10^?6 F/cm²) of the interface separating the (001)SrTiO₃ layer from the (001)La_0.67Ca_0.33MnO₃ bottom electrode.     

Optical investigations of structural phase transformations in PbMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript>-<Emphasis Type="Italic">x</Emphasis>PbTiO<Subscript>3</Subscript> single crystals located at the morphotropic phase boundary

A study has been made of the effect of a dc electric field (0 < E < 4 kV/cm) on the optical transmittance of single-crystal compounds PbMg_1/3Nb_2/3O₃-xPbTiO₃ (PMN-xPT) located at the boundaries of the morphotropic region (x = 32.0 and 36.5%) and directly at the center of the morphotropic region (x = 35%). It is shown that, at temperatures close to the morphotropic phase transition point, the electric field induces two phase transitions in PMN-32PT and PMN-35PT crystals and only one phase transition in PMN-36.5PT. The tetragonal (T) phase induced in all three compounds remains stable after the electric field is removed only in crystals with x = 35.0 and 36.5%, whereas the T phase is metastable and transforms into the monoclinic M _c phase after the field is switched off in the PMN-32PT crystals lying at the boundary of the morphotropic region on the rhombohedral side. It is found that the electric-field-induced intermediate phase M _c in PMN-35PT is inhomogeneous and that M _c transforms into the tetragonal phase in a continuous transition. It is suggested that only the presence of a third orthorhombic phase can account for the continuous character of the transition between the M _c and T phases in PMN-35PT crystals. The results obtained are interpreted in terms of the Devonshire theory for strongly anharmonic crystals. The E-T phase diagrams are constructed for all the crystals.     

Charge transport in PbMoO<Subscript>4</Subscript> crystals

Dc and ac electrical conductivity of lead molybdate crystals is studied in the temperature range 300–550 K. The electrical conductivity was shown to have electronic (hole) impurity character. The I–V characteristics are typical of a space charge-limited current. The carrier mobility was estimated to be 10^?5 cm² V^?1 sat T=300 K. The results of the study suggest the hopping mechanism of conduction in PbMoO₄ crystals.     

Green electrolytes based on dextran-chitosan blend and the effect of NH<Subscript>4</Subscript>SCN as proton provider on the electrical response studies

Dextran-chitosan blend added with ammonium thiocyanate (NH₄SCN)-based solid polymer electrolytes are prepared by solution cast method. The interaction between the components of the electrolyte is verified by Fourier transform infrared (FTIR) analysis. The blend of 40 wt% dextran-60 wt% chitosan is found to be the most amorphous ratio. The room temperature conductivity of undoped 40 wt% dextran-60 wt% chitosan blend film is identified to be (3.84?±?0.97)?×?10^?10 S cm^?1. The inclusion of 40 wt.% NH₄SCN to the polymer blend has optimized the room temperature conductivity up (1.28?±?0.43)?×?10^?4 S cm^?1. Result from X-ray diffraction (XRD) and differential scanning calorimetry (DSC) analysis shows that the electrolyte with the highest conductivity value has the lowest degree of crystallinity (χ _c) and the glass transition temperature (T _g), respectively. Temperature-dependence of conductivity follows Arrhenius theory. From transport analysis, the conductivity is noticed to be influenced by the mobility (μ) and number density (n) of ions. Conductivity trend is further verified by field emission scanning electron microscopy (FESEM) and dielectric results.