Structural, optical and electrical properties of Zn1−xCdxO thin films prepared by PLD

Ternary polycrystalline Zn_1−xCd_xO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn_1−xCd_xO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd content x also leads to the broadening of the emission peak. The resistivity of Zn_1−xCd_xO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn_1−xCd_xO films potential candidate for optoelectronic device.     

Annealing effect on the structural and optical properties of a Cd1−xZnxS thin film for photovoltaic applications

Herein is a report of a study on a Cd_1−xZn_xS thin film grown on an ITO substrate using a chemical bath deposition technique. The as-deposited films were annealed in air at 400 °C for 30 min. The composition, surface morphology and structural properties of the as-deposited and annealed Cd_1−xZn_xS thin films were studied using EDX, SEM and X-ray diffraction techniques. The annealed films have been observed to possess a crystalline nature with a hexagonal structure. The optical absorption spectra were recorded within the range of 350-800 nm. The band gap of the as-deposited thin films varied from 2.46 to 2.62 eV, whereas in the annealed film these varied from 2.42 to 2.59 eV. The decreased band gap of the films after annealing was due to the improved crystalline nature of the material.     

Structural,electronic and optical properties of CdxZn1 − xS alloys from first-principles calculations

Structural, electronic and optical properties as well as structural phase transitions of ternary alloy Cd_xZn_1 − xS have been investigated using the first-principles calculations based on the density functional theory. We found that the crystal structure of Cd_xZn_1 − xS alloys transforms from wurtzite to zinc blende as Cd content of x=0.83$x=0.83$. Effect of Cd content on electronic structures of Cd_xZn_1 − xS alloys has been studied. The bandgaps of Cd_xZn_1 − xS alloys with wurtzite and zinc blende structures decrease with the increase of Cd content. Furthermore, dielectric constant and absorption coefficient also have been discussed in detail.     

Oxygen flux influence on the morphological, structural and optical properties of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

The Zn_1−xMg_xO thin films were grown on Al₂O₃ substrate with various O₂ flow rates by plasma-assisted molecular beam epitaxy (P-MBE). The growth conditions were optimized by the characterizations of morphology, structural and optical properties. The Mg content of the Zn_1−xMg_xO thin film increases monotonously with decreasing the oxygen flux. X-ray diffractometer (XRD) measurements show that all the thin films are preferred (0 0 2) orientated. By transmittance and absorption measurements, it was found that the band gap of the film decreases gradually with increasing oxygen flow rate. The surface morphology dependent on the oxygen flow rate was also studied by field emission scanning electron microscopy (FE-SEM). The surface roughness became significant with increasing oxygen flow rate, and the nanostructures were formed at the larger flow rate. The relationship between the morphology and the oxygen flow rate of Zn_1−xMg_xO films was discussed.     

Growth of cubic MgxZn1−xO alloy films by electron beam evaporation

We report the growth of cubic Mg_xZn_1−xO alloy thin films on quartz by electron beam evaporation. It can be found that all the samples have sharp absorption edges by the absorption measurements. X-ray diffraction measurements indicate the Mg_xZn_1−xO films are cubic phase with preferred orientation along the (1 1 1) direction. Energy dispersive spectrometry (EDS) demonstrates that the Mg concentration in Mg_xZn_1−xO films is much higher than the ceramic target used, and the composition can be tuned in a small scope by varying the substrate temperature and the beam electric current. The reasons of this phenomenon are also discussed.     

Properties of MgxZn1−xO thin films sputtered in different gases

Mg_xZn_1−xO alloy films were prepared on sapphire substrates using Ar and N₂ as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the Mg_xZn_1−xO films was studied. By using N₂ as the sputtering gas, the Mg_xZn_1−xO film shows p-type conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N-O or N-Zn, and the N-doping.     

BiFeO3/Zn1−xMnxO bilayered thin films

BiFeO₃/Zn_1−xMn_xO (x = 0-0.08) bilayered thin films were deposited on the SrRuO₃/Pt/TiO₂/SiO₂/Si(1 0 0) substrates by radio frequency sputtering. A highly (1 1 0) orientation was induced for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO thin films demonstrate diode-like and resistive hysteresis behavior. A remanent polarization in the range of 2P_r ∼ 121.0-130.6 μC/cm² was measured for BiFeO₃/Zn_1−xMn_xO. BiFeO₃/Zn_1−xMn_xO (x = 0.04) bilayer exhibits a highest M_s value of ∼15.2 emu/cm³, owing to the presence of the magnetic Zn_0.96Mn_0.04O layer with an enhanced M_s value.     

Effect of substrate temperature on the morphology, structural and optical properties of Zn1−xCoxO thin films

Zn_1−xCo_xO thin films with c-axis preferred orientation were deposited on sapphire (0 0 0 1) by pulsed laser deposition (PLD) technique at different substrate temperatures in an oxygen-deficient ambient. The effect of substrate temperature on the microstructure, morphology and the optical properties of the Zn_1−xCo_xO thin films was studied by means of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted as substrate temperature rose. The structure of the samples was not distorted by the Co incorporating into ZnO lattice. The surface roughness of all samples decreased as substrate temperature increased. The Co concentration in the film was higher than in the target. Emission peak near band edge emission of ZnO from the PL spectra of the all samples was quenched because the dopant complexes acted as non-radiative centers. While three emission bands located at 409 nm (3.03 eV), 496 nm (2.5 eV) and 513 nm (2.4 eV) were, respectively, observed from the PL spectra of the four samples. The three emission bands were in relation to Zn interstitials, Zn vacancies and the complex of V_O and Zn_i (V_OZn_i). The quantity of the Zn interstitials maintained invariable basically, while the quantity of the V_OZn_i slightly decreased as substrate temperature increased.     

Characterization and properties of ZnO1−xSx alloy films fabricated by radio-frequency magnetron sputtering

A series of ZnO_1−xS_x alloy films (0 ≤ x ≤ 1) were grown on quartz substrates by radio-frequency (rf) magnetron sputtering of ZnS ceramic target, using oxygen and argon as working gas. X-ray diffraction measurement shows that the ZnO_1−xS_x films have wurtzite structure with (0 0 2) preferential orientation in O-rich side (0 ≤ x ≤ 0.23) and zinc blende structure with (1 1 1) preferential orientation in S-rich side (0.77 ≤ x ≤ 1). However, when the S content is in the range of 0.23 < x < 0.77, the ZnO_1−xS_x film consists of two phases of wurtzite and zinc blende or amorphous ZnO_1−xS_x phase. The band gap energy of the films shows non-linear dependence on the S content, with an optical bowing parameter of about 2.9 eV. The photoluminescence (PL) measurement reveals that the PL spectrum of the wurtzite ZnO_1−xS_x is dominated by visible band and its PL intensity and intensity ratio of UV to visible band decrease greatly compared with undoped ZnO. All as-grown ZnO_1−xS_x films behave insulating, but show n-type conductivity for w-ZnO_1−xS_x and maintain insulating properties for β-ZnO_1−xS_x after annealed. Mechanisms of effects of S on optical and electrical properties of the ZnO_1−xS_x alloy are discussed in the present work.     

Study of polycrystalline bulk CuIn1-xGaxTe2

Polycrystalline CuIn_1−xGa_xTe₂ bulk films were synthesized by reacting, in stoichiometric proportions, high purity Cu, In, Ga and Te in a vacuum sealed quartz ampoule. The phase structure and composition of the bulk films were analysed by X-ray diffraction and energy-dispersive X-ray analysis, respectively. The bulk samples, of p-type conductivity, are found to be near-stoichiometric, polycrystalline, with tetragonal chalcopyrite structure, predominantly oriented along a direction perpendicular to the (1 1 2) plane. Photoluminescence spectra were recorded at 7 K and 700 mW to characterize the defects and the structural quality. The main peak as a function of composition has been studied.     

Structure and electrical properties of Bi5GexSe95−x thin films

Bi₅Ge_xSe_95−x (30, 35, 40 and 45 at.%) thin films of thickness 200 nm were prepared on glass substrates by the thermal evaporation technique. The influence of composition and annealing temperature, on the structural and electrical properties of Bi₅Ge_xSe_95−x films was investigated systematically using X-ray diffraction (XRD), energy dispersive X-ray analysis (EDX). The XRD patterns showed that the as-prepared films were amorphous in nature with few tiny crystalline peaks of relatively low intensity for 30 and 45 at.% and the Bi₅Ge₄₀Se₅₅ annealed film was polycrystalline. The chemical composition of the Bi₅Ge₃₀Se₆₅ film has been checked using energy dispersive X-ray spectroscopy (EDX). The electrical conductivity was measured in the temperature range 300-430 K for the studied compositions. The effect of composition on the activation energy (ΔE) and the density of localized states at the Fermi level N(E_F) were studied, moreover the electrical conductivity was found to increase with increasing the annealing temperature and the activation energy was found to decrease with increasing the annealing temperature. The results were discussed on the basis of amorphous-crystalline transformations.     

Optical properties of MgxZn1−xO thin films deposited on silicon and sapphire substrate by rf magnetron sputtering

The index dispersion at UV–VIS range for polycrystalline Mg_xZn_1−xO films on silicon with different Mg concentration was obtained by spectroscopic ellipsometry (SE) method. It decreases with the increase of the Mg content. Above the relative peak wavelength, they are well fitted by the first-order Sellmeier relation. The band gap of films on sapphire of different Mg content was determined from transmission measurements. Photoluminescence (PL) illustrated that for Mg_xZn_1−xO films every PL peak corresponded to a special excitation wavelength. The wavelength of the PL peak was proportional to the special excitation wavelength. A strong peak was obtained in the blue band for the films due to the large amount of oxygen vacancies caused by excess Zn and Mg atoms, while weak peak at ultraviolet band.     

Formation of ZnO and Zn1−xCdxO films on CdTe/CdZnTe single crystals

In this work we report on the properties of ZnO and Zn_1−xCd_xO films formed on top of CdTe and CdZnTe single crystals. The films have been obtained by thermal evaporation of Zn metal films and further oxidation in atmospheric conditions. The structural and compositional characteristics of the films have been analysed by means of scanning electron microscopy and energy-dispersive X-ray analysis. The chemical composition of the films as a function of growth parameters has been obtained. It has been possible to demonstrate by Raman spectroscopy the formation of both ZnO and Zn_1−xCd_xO films. The possible inter-diffusion effects between the films and the substrate, derived from the oxidation process, have been discussed. It has been possible to check by means of photoluminescence, the optical quality of the ZnO and Zn_1−xCd_xO films, also regarding to the presence of local changes. Differences between the optical spectra obtained from various ZnO films grown on top of CdTe and CdZnTe substrates enabled the determination of compositional differences introduced by the substrate when the deposition parameters are modified.     

Investigations on structural and optical properties of Zn1−xGdxS nanoparticles

Zn_1−xGd_xS (x = 0.00, 0.02 and 0.04) nanoparticles were synthesized by facile chemical co-precipitation method using PVP as a surfactant. ZnS nanoparticles could be doped with Gd ions during synthesis without altering the XRD patterns of ZnS. Also, the pattern of the powders showed cubic zincblende structure. The particle size obtained from the XRD studies lies in the range 3-5 nm, whereas from TEM analysis it is 4 nm for x = 0.02 sample. The UV-Vis absorption spectra revealed that Zn_1−xGd_xS nanoparticles exhibit strong confinement effect as the blue shift in the absorption spectra with that of the undoped ZnS. The photoluminescence spectra showed enhanced luminescence intensity and the entry of Gd into host lattice.     

Structural,optical, FTIR and photoluminescence properties of Zn0.96−xCo0.04CuxO (x=0.03, 0.04 and 0.05) nanopowders

Un-hydrogenated and hydrogenated Cu, Co co-doped ZnO (Zn_0.96−xCo_0.04Cu_xO, x=0.03, 0.04 and 0.05) nanopowders have been synthesized by co-precipitation method. The synthesized samples have been characterized by powder X-ray diffraction, energy dispersive X-ray spectra, UV–Visible spectrophotometer and Fourier transform infrared spectroscopy. The calculated average crystalline size increases from 37.3 to 50.6 nm for un-hydrogenated samples from x=0.03 to 0.05 and it changes from 29.4 to 34.9 nm for hydrogenated samples. The change in lattice parameters, micro-strain, a small shift of X-ray diffraction peaks towards lower angles and reduction in energy gap reveal the substitution of Cu²⁺ ions into Zn–Co–O lattice. The hydrogenation effect reduces the particle size and induces the more uniform distribution of particles than the un-hydrogenated samples which is confirmed by SEM micrographs. Photoluminescence spectra of Zn_0.96−xCo_0.04Cu_xO system shows that red shift in near band edge ultraviolet emission from 393 to 403 nm with suppressing intensity and a blue shift in green band emission from 537 to 529 nm with enhancing intensity confirms the substitution of Cu into the Zn–Co–O lattice.     

Structural and electrical characterization of SxSe100−x thin films

Thin films of samples of the glassy S_xSe_100−x system with 0 ≤ x ≤ 7.28 have been prepared by thermal evaporation technique at room temperature (300 K). X-ray investigations show that the structure of pure selenium (Se) does change seriously by the addition of small amount of sulphur S ≤7.28%. The lattice parameters were determined as a function of sulphur content. Results of differential thermal analysis (DTA) of the glassy compositions of the system S_xSe_100−x were discussed. The characteristic temperatures (T_g, T_c and T_m) were evaluated. Dark electrical resistivities, ρ, of S_xSe_100−x thin films with different thicknesses from 100 to 500 nm, were measured in the temperature range from 300 to 423 K. Two distinct linear parts with different activation energies were observed. The variation of electrical resistivity of examined compositions has been discussed as a function of the film thickness, temperature and the sulphur content. The application of Mott model for the phonon assisted hopping of small polarons gave the same two activation energies obtained from the resistivity temperature calculations.     

Composition-dependent structural and electrical properties of PbSe1−xTex thin films

Polycrystalline PbSe_1−xTe_x ingots were prepared by solid-state microwave synthesis. Thin films of PbSe_1−xTe_x were then deposited onto clean glass substrates using vacuum evaporation technique. Their nanostructure morphologies and stoichiometric ratio were examined using scanning electron microscopy (SEM) and energy dispersive X-ray spectra (EDX). X-ray diffraction (XRD) patterns indicated that the lattice constants of PbSe_1−xTe_x powders and thin films increased with the increasing amount of Te. From the electrical property measurements, the thin films were characterized by n-type behavior.     

Theoretical research on optical properties and quantum efficiency of Ga1−xAlxN photocathodes

In order to design the optimal component structure of transmission-mode (t-mode) Ga_1−xAl_xN photocathode, the optical properties and quantum efficiency of Ga_1−xAl_xN photocathodes are simulated. Based on thin film principle, optical model of t-mode Ga_1−xAl_xN photocathodes is built. And the quantum efficiency formula is put forward. Results show that Ga_1−xAl_xN photocathodes can satisfy the need of detectors with “solar blind” property when the Al component is bigger than 0.375. There is an optimal thickness of Ga_1−xAl_xN layer to get highest quantum efficiency, and the optimal thickness is 0.3 μm. There is close relation between absorptivity and quantum efficiency, which is in good agreement with the “three-step” model. This work gives a reference for the experimental research on the Ga_1−xAl_xN photocathodes.     

Nanoscale semiconductor Pb1−xSnxSe (x = 0.2) thin films synthesized by electrochemical atomic layer deposition

In this paper the fabrication and characterization of IV-VI semiconductor Pb_1−xSn_xSe (x = 0.2) thin films on gold substrate by electrochemical atomic layer deposition (EC-ALD) method at room temperature are reported. Cyclic voltammetry (CV) is used to determine approximate deposition potentials for each element. The amperometric I-t technique is used to fabricate the semiconductor alloy. The elements are deposited in the following sequence: (Se/Pb/Se/Pb/Se/Pb/Se/Pb/Se/Sn …), each period is formed using four ALD cycles of PbSe followed by one cycle of SnSe. Then the deposition manner above is cyclic repeated till a satisfactory film with expected thickness of Pb_1−xSn_xSe is obtained. The morphology of the deposit is observed by field emission scanning electron microscopy (FE-SEM). X-ray diffraction (XRD) pattern is used to study its crystalline structure; X-ray photoelectron spectroscopy (XPS) of the deposit indicates an approximate ratio 1.0:0.8:0.2 of Se, Pb and Sn, as the expected stoichiometry for the deposit. Open-circuit potential (OCP) studies indicate a good p-type property, and the good optical activity makes it suitable for fabricating a photoelectric switch.     

Growth, structural and optical transport properties of nanocrystal Zn1−xCdS thin films deposited by solution growth technique (SGT) for photosensor applications

Solution Growth Technique (SGT) has been used for deposition of Zn_1−xCdS nanocrystalline thin films. Various parameters such as solution pH (10.4), deposition time, concentration of ions, composition and deposition and annealing temperatures have been optimized for the development of device grade thin film. In order to achieve uniformity and adhesiveness of thin film on glass substrate, 5 ml triethanolamine (TEA) have been added in deposition solution. The as-deposited films have been annealed in Rapid Thermal Annealing (RTA) system at various temperature ranges from 100 to 500 °C in air. The changes in structural formation and optical transport phenomena have been studied with annealing temperatures and composition value (x). As-deposited films have two phases of ZnS and CdS, which were confirmed by X-ray diffraction studies; further the X-ray analysis of annealed (380 °C) films indicates that the films have nanocrystalline size (150 nm) and crystal structure depends on the films stoichiometry and annealing temperatures. The Zn_0.4CdS films annealed at 380 °C in air for 5 min have hexagonal structure where as films annealed at 500 °C have represented the oxide phase with hexagonal structure. Optical properties of the films were studied in the wavelength range 350-1000 nm. The optical band gap (E_g=2.94-2.30 eV) decreases with the composition (x) value. The effect of air rapid annealing on the photoresponse has also been observed on Zn_1−xCdS nanocrystal thin films. The Zn_1−xCdS thin film has higher photosensitivity at higher annealing temperatures (380-500 °C), and films also have mixed Zn_1−xCdS/Zn_1−xCdSO phase with larger grain size than the as-deposited and films annealed up to 380 °C. The present results are well agreed with the results of other studies.