Electronic structure of collapsed C,BN, and BC3 nanotubes

The electrical properties of single-wall C, BN, and BC₃ nanotubes in ideally rolled-up forms show a wide spectrum from truly metals to large band gap semiconductors. In the presence of radial deformations that collapse tubes, the electrical properties are severely modified such that metals turn into semiconductors and vice versa. Based on first-principles pseudopotential calculations, we find that metallic C nanotubes have a finite band gap if radial deformations break all mirror symmetries of the tubes, and that original finite gaps (∼0.5 eV) of semiconducting C and BC₃ tubes are closed by collapsing deformations. In BN tubes, band gaps can be tuned in the range 2–5 eV. On the other hand, the band gaps of armchair BN and zigzag BC₃ nanotubes are found to be insensitive to radial deformations. These new findings can be applied to design new types of nanotube-based functional devices using radial deformations.     

First-principle study of interaction of molecular hydrogen with BC<Subscript>3</Subscript> composite single-walled nanotube

The physisorption of molecular hydrogen in BC₃ composite single-walled nanotube, investigated using density functional theory, was compared with single-walled carbon nanotube. Both external and internal adsorption sites of these two nanotubes have been studied with the hydrogen molecular axis oriented parallel to the nanotube wall. The calculated results show that: ([see full textsee full text]) the physisorption energies of a H₂ molecule are larger for BC₃(8,0) composite nanotube than for C(8,0) nanotube at all adsorption sites examined. ([see full textsee full text]) For these two nanotubes, the physisorption energies are larger for hydrogen bound inside the nanotubes than for adsorption outside the nanotubes. The different behavior between these two nanotubes is explained by the contour plots of electron density and charge-density difference of them. The present computations suggest that BC₃ nanotube may be a better candidate for hydrogen storage than carbon nanotube.     

Electronic structure of BN nanotubes with intrinsic defects NB and BN and isoelectronic substitutional impurities PN, AsN, SbN, InB, GaB, and AlB

The effect of intrinsic defects and isoelectronic substitutional impurities on the electronic structure of boron-nitride (BN) nanotubes is investigated using a linearized augmented cylindrical wave method and the local density functional and muffin-tin approximations for the electron potential. In this method, the electronic spectrum of a system is governed by a free movement of electrons in the interatomic space between cylindrical barriers and by a scattering of electrons from the atomic centers. Nanotubes with extended defects of substitution N_B of a boron atom by a nitrogen atom and, vice versa, nitrogen by boron B_N with one defect per one, two, and three unit cells are considered. It is shown that the presence of such defects significantly affects the band structure of the BN nanotubes. A defect band π(B, N) is formed in the optical gap, which reduces the width of the gap. The presence of impurities also affects the valence band: the widths of s, sp, and p_π bands change and the gap between s and sp bands is partially filled. A partial substitution of the N by P atoms leads to a decrease in the energy gap, to a separation of the Ds(P) band from the high-energy region of the s(B, N) band, as well as to the formation of the impurity Dπ(P) and Dπ*(P) bands, which form the valence-band top and conduction-band bottom in the doped system. The influence of partial substitution of N atoms by the As atom on the electronic structure of BN nanotubes is qualitatively similar to the case of phosphorus, but the optical gap becomes smaller. The optical gap of the BN tubule is virtually closed due to the effect of one Sb atom impurity per translational unit cell, in contrast to the weak indium-induced perturbation of the band structure of the BN nanotube. Introduction of the one In, Ga or Al atom per three unit cells of the (5, 5) BN nanotube results in 0.6 eV increase of the optical gap. The above effects can be detected by optical and photoelectron spectroscopy methods, as well as by measuring electrical properties of the pure and doped BN nanotubes. They can be used to design electronic devices based on BN nanotubes.     

Tamm states and quantum dots in carbon and heteroatomic nanotubes

The electronic structure of C-BN nanotubes is discussed in the π approximation. Two types of such structures with (n,0)-tubulet topology are investigated: 1) semiinfinite C-BN and C nanotubes and 2) C-BN nanotubes, consisting of two semiinfinite BN nanotubes coupled by a ring-shaped carbon fragment C_mn. It is shown that, in the first case, energy levels (Tamm levels) whose wave functions are localized on the terminal fragment can exist under certain conditions. In the second case, bound states localized on atoms of the carbon fragment exist. It is established that if a quite extended, cylindrical, carbon cluster is present at the end of a semiinfinite BN nanotube, then such a system can be viewed as a very simple model of a quantum dot. C-BN nanotubes where the carbon fragment couples two semiinfinite BN nanotubes can also be interpreted similarly. A simple analytic method is proposed for finding the Tamm energy levels in heteroatomic nanotubes. Fiz. Tverd. Tela (St. Petersburg) 41, 1515–1519 (August 1999)     

Elastic properties of single-wall nanotubes

3 , BC₂N, and C₃N₄. These studies have been carried out using a total-energy, non-orthogonal, tight-binding parametrisation which is shown to provide results in good agreement both with calculations using higher levels of theory and the available experimental data. Our results predict that of all types of nanotubes considered, carbon nanotubes have the highest Young’s modulus. We have considered tubes of different diameters, ranging from 0.5 to 2 nm, and find that in the limit of large diameters the mechanical properties of nanotubes approach those of the corresponding flat graphene-like sheets. Received: 30 November 1998 / Accepted: 14 December 1998     

Filling boron nitride nanotubes with metals

The authors’ endeavors over the last few years with respect to boron nitride (BN) nanotube metal filling are reviewed. Mo clusters of 1–2 nm in size and FeNi Invar alloy (Fe ∼60 at. %; Ni ∼40 at. %) or Co nanorods of 20–70 nm in diameter were embedded into BN nanotube channels via a newly developed two-stage process, in which multi-walled C nanotubes served as templates for the BN multi-walled nanotube synthesis. During cluster filling, low-surface-tension and melting-point Mo oxide first filled a C nanotube through the open tube ends, followed by fragmentation of this filling into discrete clusters via O₂ outflow and C→BN conversion within tubular shells at high temperature. During nanorod filling, C nanotubes containing FeNi or Co nanoparticles at the tube tips were first synthesized by plasma-assisted chemical vapor deposition on FeNi Invar alloy or Co substrates, respectively, and, then, the nanomaterial was heated to the melting points of the corresponding metals in a flow of B₂O₃ and N₂ gases. During this second stage, simultaneous filling of nanotubes with a FeNi or Co melt through capillarity and chemical modification of C tubular shells to form BN nanotubes occurred. The synthesized nanocomposites were analyzed by scanning and high-resolution transmission electron microscopy, electron diffraction, electron-energy-loss spectroscopy and energy-dispersive X-ray spectroscopy. The nanostructures are presumed to function as ‘nanocables’ having conducting metallic cores (FeNi, Co, Mo) and insulating nanotubular shields (BN) with the additional benefit of excellent environmental stability. Received: 10 October 2002 / Accepted: 25 October 2002 / Published online: 10 March 2003 RID="*" ID="*"Corresponding author. Fax: +81-298/51-6280, E-mail: golberg.dmitri@nims.go.jp     

Fe nanowire encapsulated in boron nitride nanotubes

Boron nitride (BN) nanotubes, nanohorns, nanocoils were synthesized by annealing Fe₄N and B powders at 1000 °C for 1 h in nitrogen gas atmosphere. Especially, Fe-filled BN nanotubes were produced, and investigated by high-resolution electron microscopy, high-angle annular dark-field scanning transmission electron microscopy, electron diffraction and energy dispersive X-ray spectroscopy, which indicates that the [110] of Fe is parallel to the BN nanotube axis. Formation mechanism of Fe-filled BN nanotube was speculated based on these results.     

Effect of doping on electronic properties of double-walled carbon and boron nitride hetero-nanotubes

The effect of boron nitride (BN) doping on electronic properties of armchair double-walled carbon and hetero-nanotubes is studied using ab initio molecular dynamics method. The armchair double-walled hetero-nanotubes are predicted to be semiconductor and their electronic structures depend strongly on the electronic properties of the single-walled carbon nanotube. It is found that electronic structures of BN-doped double-walled hetero-nanotubes are intermediate between those of double-walled boron nitride nanotubes and double-walled carbon and boron nitride hetero-nanotubes. Increasing the amount of doping leads to a stronger intertube interaction and also increases the energy gap.     

First-principles study of single-walled armchair Cx(BN)y nanotubes

The structural and electronic properties of the armchair C_x(BN)_y nanotubes are studied using the density functional theory with a generalized gradient approximation. The results show that the properties of the C_x(BN)_y nanotubes are intermediate between those of carbon nanotubes and BN nanotubes, and also adjustable by their radius, ratio of carbon component, and configurations.     

Nonchiral BN Haeckelite nanotubes

A new class of boron-nitrogen (BN) nanotubes composed of tetragons, pentagons, hexagons, heptagons, and octagons is considered. By analogy with carbon nanotubes of the same topological structure, these nanotubes were called Haeckelites. The geometry, energetics, and electronic properties were studied in detail for two regular mutual arrangements of the polygons. It was found that Haeckelite nanotubes are dielectrics with the energy gap E_g = 3.24–4.09 eV. As the nanotube diameter increases, the energy gap E_g decreases, approaching the value for the corresponding planar Haeckelite layer. The ground-state energy of the Haeckelite BN nanotubes is 0.3 eV/atom higher than that of well-known hexagonal BN nanotubes.     

Structure and electronic properties of a heterojunction between a single wall carbon nanotube and a TiC cluster

Atomic structures and electronic properties of heterojunctions of Ti-TiC and TiC-single wall carbon nanotube, Ti₄₈-Ti₁₉C₂₆ and Ti₁₉C₂₄-C₃₀, are studied by the first principles calculation based on the density functional theory. At the junctions, these substrates are smoothly connected with each other and keep their original structures and electronic properties. The structures of the junctions obtained in the present work give a realistic model to ab initio study for electronic transport properties through the junction of a carbon nanotube and an electrode.     

N-doping and coalescence of carbon nanotubes: synthesis and electronic properties

Self-assembly pyrolytic routes to large arrays (<2.5 cm²) of aligned CN_x nanotubes (15–80 nm OD and <100 μm in length) are presented. The method involves the thermolysis of ferrocene/melamine mixtures (5:95) at 900–1000 °C in the presence of Ar. Electron energy loss spectroscopy (EELS) reveals that the N content varies from 2–10%, and can be bonded to C in two different fashions (double-bonded and triple-bonded nitrogen). The electronic densities of states (DOS) of these CN_x nanotubes, using scanning tunneling spectroscopy (STS), are presented. The doped nanotubes exhibit strong features in the conduction band close to the Fermi level (0.18 eV). Using tight-binding and ab initio calculations, we confirm that pyridine-like (double-bonded) N is responsible for introducing donor states close to the Fermi Level. These electron-rich structures are the first example of n-type nanotubes. Finally, it will be shown that moderate electron irradiation at 700–800 °C is capable of coalescing single-walled nanotubes (SWNTs). The process has also been studied using tight-binding molecular dynamics (TBMD). Vacancies induce the coalescence via a zipper-like mechanism, which has also been observed experimentally. These vacancies trigger the organization of atoms on the tube lattices within adjacent tubes. These results pave the way to the fabrication of nanotube heterojunctions, robust composites, contacts, nanocircuits and strong 3D composites using N-doped tubes as well as SWNTs. Received: 10 October 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

Adsorption of mercaptopurine drug on the BN nanotube,nanosheet and nanocluster: a density functional theory study

ABSTRACT

We have investigated the interaction of mercaptopurine (MP) drug with BN nanotube, nanosheet and nanocluster using density functional theory calculations in the gas phase, and aqueous solution. We predicted that the MP drug tends to be physically adsorbed on the surface of BN nanosheet with an adsorption energy (E_ad) about ?3.2?kcal/mol. The electronic properties of BN nanosheet are not affected by the MP drug, and this sheet is not a sensor. But the electronic properties of BN nanotube and nanocluster are significantly sensitive to this drug in both gas phase, and aqueous solution. The BN nanocluster suffers from a long recovery time (8.8?×?10⁸?s) because of a strong interaction (E_ad?=??28.6?kcal/mol), and this cluster is not a proper sensor for MP detection. But the BN nanotube benefits from a short recovery time about 49.5?s at room temperature, and may be a promising candidate for application in the MP sensors. The water solvent decreases the strength of interaction between the BN nanotube, and MP drug, but it does not affect the electronic sensitivity of the nanotube sensibly.     

Size-dependent electronic structures of boron carbonitride (BC2N) nanotubes. A DFT approach

The electronic structures and physical properties of zigzag BC₂N (n,0; n = 4–10) and armchair BC₂N (n,m; n = m = 4–10) nanotubes (type III) are studied by using density functional theory with the generalized gradient approximation. From a comparison of the binding energies, it is inferred that in the large diameter BC₂N nanotubes, the zigzag form is thermally more stable than the armchair form. BC₂N nanotubes (with the exception of (4,0) which is conductor) are gapless semiconductors. Depend on the chirality index, the zigzag forms of BC₂N nanotubes have narrower band gap than the armchair form. Semiconductor character in the studied BC₂N nanotubes is due to contribution of p electrons in the Fermi level. Mulliken population analyses show that significant amounts of electron charge are transferred between atoms; which suggests the existence of polar covalent bonds in the BC₂N nanotubes.     

Synthesis and Raman characterization of mono-sized single-wall carbon nanotubes in one-dimensional channels of AlPO4-5 crystals

Mono-sized single-wall carbon nanotubes were formed in one-dimensional channels of AlPO₄-5 single crystal (AFI) by pyrolysis of tripropylamine (TPA). Raman spectra have been measured for the TPA-AFI crystals thermally processed at different conditions. TPA molecules are carbonized at 400 °C, and carbon nanotubes were formed at 500 °C or above. The radial-breathing mode, which is special for carbon nanotube geometry, was observed. Three Raman-active modes with symmetry A _1g, E _1g, and E _2g were identified by detailed symmetrical analysis for the polarized-Raman spectra. Received: 29 October 1998 / Accepted: 29 March 1999 / Published online: 24 June 1999     

拉伸形变下BC3纳米管的能带结构

运用紧束缚能带理论,研究拉伸形变下BC₃纳米管的能带结构. 研究表明:随着拉伸和压缩强度的不断增加,BC₃纳米管的导带能级和价带能级逐渐靠近,最终发生能带交叠. 压缩形变下能带的交叠程度可达05 eV,而拉伸形变下只有02 eV. 对于扶手椅型BC₃纳米管,随着拉伸和压缩的不断增加,BC₃纳米管首先由直接半导体转化为间接半导体,进而发生能带的交叠,表现出金属性. 在无形变时,扶手椅型BC₃纳米 关键词： 3纳米管')" href="#">BC₃纳米管 能隙 拉伸形变 半导体     

Study of titanium adsorption on perfect and defected BC3 nanotubes using density functional theory

Density functional theory calculations were used to study the titanium (Ti) adsorption on perfect and defected (4, 0) BC₃ nanotubes, considering Stone–Wales and vacancy defects. The binding energy values for these nanotubes were larger than the corresponding values for carbon nanotubes. The charge transfer from the Ti atom to nanotube was observed for all systems studied. The most exothermic binding process occurred for the Ti adsorption on a native V_B defect, which showed minimum structural deformation with respect to a perfect BC₃ tube. In the case of a nanotube with a reconstructed carbon vacancy, the adsorption of Ti generated a half-metallic anti-ferromagnet. The results obtained in this paper are relevant for spintronics and hydrogen adsorption applications.     

Electronic,structural, and thermal properties of a nanocable consisting of carbon and BN nanotubes

The band structure and thermal behavior of a coaxial C/BN nanocable (5,5)C@(17,0)BN consisting of a carbon nanotube and a boron nitride nanotube have been studied using a tight-binding approximation based on density functional theory. The system is stable up to T～3500–3700 K. As the temperature increases, deformations of the BN tube begin earlier than those of the carbon tube. The near-Fermi states of the nanocable are formed by the overlapping π-π* bands of the carbon tube, and the outer BN nanotube (the nanocable sheath) is an insulator with a bandgap of ～4 eV. The electronic properties of the nanocable (the metallic-type conductivity of the C tube and the insulating character of the BN tube) are retained over the entire temperature interval.     

C/SiC纳米管异质结电子结构的第一性原理研究

采用基于密度泛函理论的第一性原理计算,对扶手椅型(4,4)和(6,6)及锯齿型(8,0)和(10,0)C/SiC纳米管异质结的电子结构进行了研究.结果表明两类异质结结构都表现为半导体特性.扶手椅型纳米管异质结形成了Ⅰ型异质结,电子和空穴都限制在碳纳米管部分.锯齿型纳米管异质结中价带顶主要分布在碳纳米管部分及C/SiC界面处,而导带底均匀分布在整个纳米管异质结上.这两种异质结结构在未来纳米器件中具有潜在的应用价值. 关键词： C/SiC纳米管异质结 第一性原理 电子结构     

Influence of isoelectronic impurities on the electronic structure of BN nanotubes

Via the example of a (5, 5) boron-nitrogen armchair nanotube, the influence of isoelectronic substitutional impurities on the electronic structure of BN nanotubes has been investigated with the use of linear augmented cylindrical waves. The treatment is based on the local density approximation and the muffin-tin approximation for the electron potential. In this method, the electronic spectrum of a system is governed by the free motion of electrons in the interatomic space between cylindrical barriers and the electron scattering on atomic centers. It has been found that the substitution of one atom of N by P leads to the splitting of all twofold degenerate bands by 0.2 eV on average, a decrease in the energy gap from 3.5 to 2.8 eV, the separation of the s(P) band from the high-energy region of the s(B, N) band, as well as to the formation of the impurity π(P) and π*(P) bands, which form the valence-band top and conduction-band bottom in the doped system. The influence of an As atom on the electronic structure of (5, 5) BN nanotubes is qualitatively similar to the case of phosphorus, but the energy gap is smaller by 0.5 eV. The optical gap in the nanotubes is closed due to the effect of the Sb atom impurity. A substitution of one B atom by an Al atom results in the strong perturbation of the band structure and the energy gap in this case is only 1.6 eV in contrast to the weak indium-induced perturbation of the band structure of the BN nanotube. In the latter case, the energy gap is 2.9 eV. The above effects can be detected by the optical and photoelectron spectroscopy methods, as well as by measuring the electrical properties of the nanotubes. They can be used to create electronic devices based on boron-nitrogen nanotubes.