Atomic geometry and electronic properties of the Ge(1 1 1)2 × 1-Sb surface studied by scanning tunneling microscopy/spectroscopy and core-level photoemission

By scanning tunneling microscopy and spectroscopy (STM/S) and high-resolution core-level photoemission using synchrotron radiation, we have investigated the atomic structure and electronic properties of Sb-induced 2 × 1 reconstruction on Ge(1 1 1). Our results support well the zigzag-chain model proposed for this phase in the literature; in particular, the STM images visualize the Sb zigzag (Seiwatz) chain in a real space, and the STS I-V spectrum suggests this surface to be semiconducting, in good agreement with the atomic configuration proposed. However, a closer inspection of the STM results does not support the buckling of Sb chains reported in earlier studies. Moreover, the analysis of the Sb 4d core-level line shape of the (2 × 1) reconstruction shows that the bonding state of the Sb atoms is very similar, suggesting an unbuckled Seiwatz chain. In addition, the Ge 3d core-level emission reveals only one component, giving evidence for the ideal bulk-terminated structure of the Ge substrate.     

Angle-resolved X-ray photoemission electron microscopy

Synchrotron based photoemission electron microscopy with energy filter combines real space imaging with microprobe diffraction (μ-ARPES), giving access to the local electronic structure of laterally inhomogeneous materials. We present here an overview of the capabilities of this technique, illustrating selected applications of angle resolved photoemission electron microscopy and related microprobe methods. In addition, we report the demonstration of a darkfield XPEEM (df-XPEEM) imaging method for real space mapping of the electronic structure away from Γ at a lateral resolution of few tens of nm. The application of df-XPEEM to the (1 × 12)-O/W(1 1 0) model oxide structure shows the high sensitivity of this technique to the local electronic structure, allowing to image domains with inequivalent adsorption site symmetry. Perspectives of angle-resolved PEEM are discussed.     

Accessing fast magnetization dynamics by XPEEM: Status and perspectives

Being already well established as a versatile technique for high-resolution static magnetic domain imaging, X-ray photoemission electron microscopy (XPEEM) is now also capturing the field of time-resolved magnetic investigations. Using appropriate operation modes at synchrotron radiation sources, a time resolution of 10 ps and less can be achieved in recent magnetodynamics studies, giving access even to phenomena involving precessional processes.     

Core-level spectroscopy of the Pd/W(1 1 0) interface: Evidence of long-range Pd-island-W interactions at submonolayer Pd coverages

We have measured W 4f_7/2 core-level photoemission spectra from W(1 1 0) in the presence of Pd overlayers for coverages up to ∼1 pseudomorphic monolayer (ML). At coverages close to 0.05 ML a striking change in the W core-level spectrum is observed, which we interpret as indicating a long-range lateral effect of 2D Pd islands upon the W electronic structure in both the first and second W layers. As the coverage increases the long-range effect weakens and finally vanishes near 0.85 ML. Above this coverage the W spectra are typical for a W-based bimetallic interface, with the first-layer W atoms exhibiting a small interfacial core-level shift (−95 ± 5 meV) compared to the bulk atoms.     

Core-level shifts at the Pt/W(1 1 0) monolayer bimetallic interface

We have measured W and Pt 4f_7/2 core-level photoemission spectra from interfaces formed by ultrathin Pt layers on W(1 1 0), completing our core-level measurements of W(1 1 0)-based bimetallic interfaces involving the group-10 metals Ni, Pd, and Pt. With increasing Pt coverage the sequence of W spectra can be described using three interfacial core-level peaks with binding-energy (BE) shifts (compared to the bulk) of −0.220 ± 0.015, −0.060 ± 0.015, and +0.110 ± 0.010 eV. We assign these features to 1D, 2D pseudomorphic (ps), and 2D closed-packed (cp) Pt phases, respectively. For ∼1 ps ML the Pt 4f_7/2 BE is 71.40 ± 0.02 eV, a shift of +0.46 ± 0.09 eV with respect to the BE of bulk Pt metal. The W 4f_7/2 core-level shifts induced by all three adsorbates are semiquantitatively described by the Born-Haber-cycle based partial-shift model of Nilsson et al. [39]. As with Ni/W(1 1 0), the difference in W 4f_7/2 binding energies between ps and cp Pt phases has a large structural contribution. The Pt 4f lineshape is consistent with a small density of states at the Fermi level, reflective of the Pt monolayer having noble-metal-like electronic structure.     

Photoemission study of the Li/Ge(1 1 1)-3 × 1 reconstruction

In this article we report our findings on the electronic structure of the Li induced Ge(1 1 1)-3 × 1 reconstruction as determined by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and core-level spectroscopy using synchrotron radiation. The results are compared to the theoretical honeycomb-chain-channel (HCC) model for the 3 × 1 reconstruction as calculated using density functional theory (DFT). ARUPS measurements were performed in both the and directions of the 1 × 1 surface Brillouin zone at photon energies of 17 and 21.2 eV. Three surface related states were observed in the direction. In the direction, at least two surface states were seen. The calculated band structure using the single-domain HCC model for Li/Ge(1 1 1)-3 × 1 was in good agreement with experiment, allowing for the determination of the origin of the experimentally observed surface states. In the Ge 3d core-level spectra, two surface related components were identified, both at lower binding energy with respect to the Ge 3d bulk peak. Our DFT calculations of the surface core-level shifts were found to be in fair agreement with the experimental results. Finally, in contrast to the Li/Si(1 1 1)-3 × 1 case, no double bond between Ge atoms in the top layer was found.     

Core-level shifts of the c(8 × 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) surfaces

We have studied In-stabilized c(8 × 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III–V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the ζ and ζa models, which have been previously established to describe the atomic structures of the III–V(1 0 0)c(8 × 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III–V(1 0 0)c(8 × 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated ζ and ζa SCLS values shows that the InSb spectra are reproduced by the ζ SCLSs better than by the ζa SCLSs. Interestingly, the ζa fits agree better with the InAs spectra than the ζ fits do, indicating that the ζa model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III–V(1 0 0)c(8 × 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges.     

Surface core-level shift of Pd at the AgcPd1−c(1 1 1) surface: Nonlinear subsurface effects

The surface core-level binding-energy shift (SCLS) of Pd at the Ag_cPd_1−c(1 1 1) surface is calculated as a function of bulk concentration of the alloy. The equilibrium volume and the surface concentration profile used in the calculations refer to the 0 K case. The SCLSs are evaluated within the Z + 1 approximation. The results are analysed using the mixing enthalpy of the alloy and the bulk and surface chemical potentials. A relation of the SCLS to the bulk concentration is considered. This relation is shown to be mediated by the surface concentration profile which induces the observed nonlinear behaviour. The results are interpreted using a simple model for the alloy electronic structure.     

Methyl concentration time-histories during iso-octane and n-heptane oxidation and pyrolysis

Methyl radical concentration time-histories were measured during the oxidation and pyrolysis of iso-octane and n-heptane behind reflected shock waves. Initial reflected shock conditions covered temperatures of 1100-1560 K, pressures of 1.6-2.0 atm and initial fuel concentrations of 100-500 ppm. Methyl radicals were detected using cw UV laser absorption near 216 nm; three wavelengths were used to compensate for time- and wavelength-dependent interference absorption. Methyl time-histories were compared to the predictions of several current oxidation models. While some agreement was found between modeling and measurement in the early rise, peak and plateau values of methyl, and in the ignition time, none of the current mechanisms accurately recover all of these features. Sensitivity analysis of the ignition times for both iso-octane and n-heptane showed a strong dependence on the reaction C₃H₅ + H = C₃H₄ + H₂, and a recommended rate was found for this reaction. Sensitivity analysis of the initial rate of CH₃ production during pyrolysis indicated that for both iso-octane and n-heptane, reaction rates for the initial decomposition channels are well isolated, and overall values for these rates were obtained. The present concentration time-history data provide strong constraints on the reaction mechanisms of both iso-octane and n-heptane oxidation, and in conjunction with OH concentration time-histories and ignition delay times, recently measured in our laboratory, should provide a self-consistent set of kinetic targets for the validation and refinement of iso-octane and n-heptane reaction mechanisms.     

Formation of vinylidene and vinylene by selective reactivity of Si(1 0 0)2 × 1 towards iso, cis and trans isomers of dichloroethylene

The room temperature (RT) chemisorption of three (iso, cis and trans) isomers of dichloroethylene (DCE) on Si(1 0 0)2 × 1 have been investigated by X-ray photoelectron spectroscopy (XPS) and temperature programmed desorption (TPD). Unlike ethylene, the lack of molecular desorption features in the TPD data effectively rules out the cycloaddition adsorption mechanism for all three isomers. XPS spectra show that cis- and trans-DCE adsorb dissociatively on the 2 × 1 surface in equal proportion as mono-σ bonded 2-chlorovinyl and di-σ bonded vinylene adspecies, which could be produced by dechlorination mechanisms involving the proposed tri-atom π-complex and diradical intermediates, respectively. Acetylene (m/z 26) evolution from 2-chlorovinyl adspecies at 590 K and vinylene at 750 K are also observed for both cis- and trans-DCE, further confirming the common adsorption mechanisms for these geometrical isomers and the relative stabilities of the adspecies. In contrast, only vinylidene adspecies is found for iso-DCE, which indicates that the high ionicity of the CCl₂ group favours the diradical dechlorination mechanism. The single m/z 26 desorption peak for iso-DCE adspecies observed at a higher temperature (780 K) than cis and trans isomers is consistent with the higher adsorption energy of vinylidene than vinylene on Si(1 0 0) obtained in our ab initio calculations. The different relative locations of the Cl atoms in these isomers therefore play a crucial role in controlling the adsorption and thermal evolution on Si(1 0 0)2 × 1. The selective reactivity of the 2 × 1 surface towards these isomers can be used to generate vinylene or vinylidene templates from their corresponding adspecies.     

Generation of optically active states in a-SiNx by thermal treatment

Amorphous silicon nitride (a-SiN_x) films were deposited using plasma-enhanced chemical-vapor deposition (PECVD) and subsequently, thermal annealing processes were performed at 700-1000 °C in the ultra-high vacuum (UHV) condition. A strong photoluminescence (PL) peak induced by luminescent defect centers was observed at 710 nm for the as-deposited sample. When the sample was annealed at 700-1000 °C, the PL peak intensity became about 3-12 times stronger with no shift of the PL peak. To investigate the origin of the change in PL peak intensity after the thermal annealing, Si 2p and N 1s core-level spectra were systematically analyzed by high-resolution photoemission spectroscopy (HRPES) using synchrotron radiation. In particular, N 1s spectra were decomposed with three characteristic nitrogen-bonding states. It is revealed that the nitrogen bonding state with N-Si and NSi₂ configurations (denoted as N3) contributes mainly to the change in PL peak intensity. We note that luminescent nitrogen related defect centers such as N₄⁺ and N₂° are localized in the state N3. Detailed analysis of the experimental results shows that the state N3 is located in the interface bounded by the region of the nano-sized stoichiometric silicon nitride Si₃N₄ (denoted as N1) and is considerably influenced by the thermal annealing, which is an appropriate process to cause strong photoluminescence of the related samples as mentioned above.     

Binding energy shift in photoemission spectroscopy study of Ni clusters deposited on rutile TiO2 surfaces

Cluster-size-dependent binding energy (BE) shifts of Ni 2p_3/2 spectra in Ni clusters with respect to bulk Ni metal have been studied as a function of Ni coverage on clean rutile TiO₂(0 0 1) surfaces at room temperature. Auger parameter (AP) analysis of photoelectron spectra has been employed and revealed an obvious initial state contribution at the coverage of 0.5 monolayers (ML). The initial state effect was demonstrated to be strongly affected by the substrate and was assigned to a combination of eigenvalue shift in surface core-level shift (SCLS) and charge transfer between the metal clusters and substrates. The TiO₂(0 0 1) surface stoichiometry was found to introduce different charge transfer behaviors. Our results experimentally present that the Ni clusters are charged positively on stoichiomtric TiO₂ surface and less positively or even negatively on various reduced surfaces.     

Oxidation and thermal reduction of the Cu(1 0 0) surface as studied using positron annihilation induced Auger electron spectroscopy (PAES)

Changes in the surface of an oxidized Cu(1 0 0) single crystal resulting from vacuum annealing have been investigated using positron annihilation induced Auger electron spectroscopy (PAES). PAES measurements show a large increase in the intensity of the annihilation induced Cu M_2,3VV Auger peak as the sample is subjected to a series of isochronal anneals in vacuum up to annealing temperature 300 °C. The intensity then decreases monotonically as the annealing temperature is increased to ∼600 °C. Experimental probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons are estimated from the measured intensities of the positron annihilation induced Cu M_2,3VV and O KLL Auger transitions. Experimental PAES results are analyzed by performing calculations of positron surface states and annihilation probabilities of surface-trapped positrons with relevant core electrons taking into account the charge redistribution at the surface, surface reconstructions, and electron-positron correlations effects. The effects of oxygen adsorption on localization of positron surface state wave function and annihilation characteristics are also analyzed. Possible explanation is proposed for the observed behavior of the intensity of positron annihilation induced Cu M_2,3VV and O KLL Auger peaks and probabilities of annihilation of surface-trapped positrons with Cu 3p and O 1s core-level electrons with changes of the annealing temperature.     

A theoretical study of FeCN in the Δ electronic ground state

The three-dimensional potential energy and dipole moment surfaces for the electronic ground state ⁶Δ of FeCN have been computed at the MR-SDCI + Q + E_rel/[Roos ANO (Fe), aug-cc-pVQZ (C, N)] level of theory, where MR-SDCI means ‘multi-reference single and double excitation configuration interaction’ and ANO means ‘atomic natural orbital’. Based on these potential energy and dipole moment surfaces, the spectroscopic parameters, rovibronic energies, structural parameters, vibrational transition moments, and the wavenumbers and intensities of selected rotation-vibration transitions have been calculated. The equilibrium structure is linear with r_e(Fe-C) = 2.048 Å and r_e(C-N) = 1.168 Å, and the zero-point averaged structure is bent with 〈r(Fe-C)〉₀ = 2.082 Å, 〈r(C-N)〉₀ = 1.172 Å, and 〈∠(Fe-C-N)〉₀ = 170(5)°. At all the MR-SDCI + Q and the size-extensive multi-reference averaged quadratic coupled-cluster (MR-AQCC) levels of theory, with and without relativistic correction E_rel, that were employed in the present work, ⁶Δ FeCN is predicted to be slightly more stable than ⁶Δ FeNC. For example, the energy difference between the two isomers is approximately 150 cm⁻¹ at the highest level of theory employed, MR-AQCC + E_rel/[Roos ANO (Fe), aug-cc-pVQZ (C, N)] with zero-point energy correction. The electronic structure of ⁶Δ FeCN has also been compared with that of ⁶Δ FeNC. At present, no experimental spectroscopic data are available for ⁶Δ FeCN. It is hoped that the present work will stimulate experimental investigations of this molecule.     

Kinetics of the H + NCO reaction

Ab initio transition state theory (TST) based master equation simulations are used to predict the temperature and pressure dependence of the H + NCO reaction rate and product branching. The barrierless entrance channels to form singlet HNCO and NCOH are studied with variable reaction coordinate TST employing a potential energy surface obtained from multi-reference configuration interaction ab initio calculations. The remaining channels, including reactions on the triplet surface, are studied with standard TST methods employing high level electronic structure results. The energy transfer parameters for the master equation simulations arise from a fit to the experimentally observed HNCO dissociation rate. The lowest energy threshold to formation of bimolecular products, ³NH + CO, lies well below the reactants. The bottleneck for intersystem crossing, which precedes the formation of ³NH + CO from the singlet adducts, becomes the dominant bottleneck for that channel at quite low energies relative to reactants. The effect of this bottleneck is studied with model calculations designed to reproduce detailed experimental observations of photolysis branching ratios. This bottleneck greatly reduces the flux from H + NCO to ³NH + CO via the singlet adducts. As a result, stabilization and reaction on solely the triplet surface are significant components of the overall rate. The present predictions for the high pressure and collisionless limit rate coefficients are accurately reproduced over the 200-2500 K range by the expressions, 1.53 × 10⁻⁵T^−1.86exp(−399/T) + 1.07 × 10³T^−3.15exp(−15219/T) and 5.62 × 10⁻¹²T^0.493exp(148/T) cm³ molecule⁻¹ s⁻¹, respectively, where T is in K. These predictions are in reasonably satisfactory agreement with the somewhat discordant experimental rate measurements.     

Ab-initio pseudopotential study of electronic structure and chemisorption of oxygen on aluminium surface

Chemisorption of oxygen atom on aluminium (1 1 1), (1 1 0) and (1 0 0) surfaces is studied using ab-initio plane wave pseudopotential method based on density functional theory (DFT). Oxygen atom chemisorbed on three different high symmetry sites; top, short-bridge and hollow sites on the aluminium surfaces are examined. It has been found that the O-adatom adsorbed at the hollow site on aluminium (1 1 1), (1 1 0) and (1 0 0) plane yield energetically most stable structure. Calculation of chemisorption energies of O-adatom on aluminium surfaces shows that oxygen is most strongly bound to aluminium atoms on Al(1 1 1) plane and the calculated value of the chemisorption energy of O-adatom at the hollow site on Al(1 1 1) surface is 4.8 eV. In this work, the chemisorption energies calculated for O-adatom on Al(1 1 0) and Al(1 0 0) surfaces are reported for the first time. The electronic structures and the electronic charge density distributions of the oxygen chemisorbed aluminium surfaces are also investigated. Calculations show that for aluminium, p orbitals also contribute significantly along with the s orbitals during the bond formation with oxygen atom. Therefore, the possibilities of hybridizations lead to the strong bonding configurations.     

Electronic surface states on the MOVPE-prepared InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface

In this paper, the InGa-terminated InGaAs(1 0 0) (4 × 2)/c(8 × 2) surface was studied in detail, which turned out to be the most suitable to develop an InGaAs/GaAsSb interface that is as sharp as possible. In ultra high vacuum the InGaAs surface was investigated with low-energy electron diffraction, scanning tunneling microscopy and UV photoelectron spectroscopy employing synchrotron radiation as light source. Scanning the Γ−Δ−X direction by varying the photon energy between 8.5 eV and 50 eV, two surface states in the photoelectron spectra were observed in addition to the valence band peaks.     

Shallow hydroxyapatite coatings pulsed laser deposited onto Al2O3 substrates with controlled porosity: correlation of morphological characteristics with in vitro testing results

We studied the influence of porous Al₂O₃ substrates on Ce-stabilized ZrO₂-doped hydroxyapatite thin films morphology pulsed laser deposited on their top. The porosities of substrates were monitored by changing sintering temperatures and measured with a high pressure Hg porosimeter.The depositions were conducted in 50 Pa water vapors by multipulse ablation of the targets with an UV KrF* (λ = 248 nm, τ ∼ 25 ns) excimer laser. The surface morphology of synthesized nanostructures was investigated by scanning electron microscopy and atomic force microcopy. Ca/P ratio within the range 1.67-1.70 was found for hydroxyapatite coatings by energy dispersive spectroscopy.The films were further seeded with mesenchymal stem cells for in vitro tests. The cells showed good attachment and spreading uniformly covering the entire surface of samples. The complexity of film morphology which is increasing with substrate porosity was shown to have a positive influence on cultivated cells density.     

Performance of a slow positron beam using a hybrid lens design

The University of Hong Kong positron beam employs conventional magnetic field transport to the target, but has a special hybrid lens design around the positron moderator that allows the beam to be focused to millimeter spot sizes at the target. The good focusing capabilities of the beam are made possible by extracting work-function positrons from the moderator in a magnetic field free region using a conventional Soa lens thus minimizing beam canonical angular momentum. An Einzel lens is used to focus the positrons into the magnetic funnel at the end of transportation magnetic field while at the same time bringing up the beam energy to the intermediate value of 7.5 keV. The beam is E × B filtered at this intermediate energy. The final beam energy is obtained by floating the Soa-Einzel system, E × B filter and flight tube, and accelerating the positrons just before the target. External beam steering saddle coils fine tune the position, and the magnetic field around the target chamber is adjusted so as to keep one of the beam foci always on the target. The system is fully computer controlled. Variable energy-Doppler broadened annihilation radiation (VEDBAR) data for a GaN sample are shown which demonstrate the performance of the positron beam system.