Reduction of core in cage protein for application to electron device

For application to floating nanodots gate memory, ferritin core, ferrihydrite nanodot, array was made and reduced to be conductive. Ammonia plasma treatment was employed to reduce the ferrihydrite cores. X-ray photoelectron spectroscopy analysis confirmed that the plasma treated cores embedded in a SiN film are successfully reduced from ferrihydrite to metal iron. It was elucidated that hydrogen radicals or ions in the plasma combine with oxygen atoms in the core and, consequently, the core is reduced to a conductive state. Transmission electron microscope analysis before and after the treatment showed that the reduced core size was smaller than ferrihydrite core by approximately 2 nm, which is consistent with theoretical calculation of the shrink size accompanying core reduction to α-Fe. The plasma treated cores embedded in SiO₂ film are found to be iron oxides, which indicates that the metal iron nanodots are vulnerable to oxygen and easy to be reoxidized.     

Numerical simulation study of organic nonvolatile memory with polysilicon floating gate

A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed.The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing(P/E) operations at various P/E voltages are discussed.The simulated results show that present memory exhibits a large memory window of 57.5 V,and a high read current on/off ratio of ≈ 10~3.Compared with the reported experimental results,these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects,which shows great promise in device designing and practical application.     

Low voltage program-erasable Pd-Al_2O_3-Si capacitors with Ru nanocrystals for nonvolatile memory application

Pd-Al2O3-Si capacitors with Ru nanocrystals are fabricated and electrically characterized for nonvolatile memory application.While keeping the entire insulator Al2O3thickness fixed,the memory window has a strong dependence on the tunneling layer thickness under low operating voltages,whereas it has weak dependence under high operating voltages.As for the optimal configuration comprised of 6-nm tunneling layer and 22-nm blocking layer,the resulting memory window increases from 1.5 V to 5.3 V with bias pulse increasing from 10 5s to 10 2s under±7 V.A ten-year memory window as large as 5.2 V is extrapolated at room temperature after±8 V/1 ms programming/erasing pulses.     

Preparation of size controllable copper nanocrystals for nonvolatile memory applications

A method of fabricating Cu nanocrystals embedded in SiO2 dielectric film for nonvolatile memory applications by magnetron sputtering is introduced in this paper. The average size and distribution density of Cu nanocrystal grains are controlled by adjusting experimental parameters. The relationship between nanocrystal floating gate micro-structure and its charge storage capability is also discussed theoretically.     

静态随机访问存储器型现场可编程门阵列辐照效应测试系统研制

在调研静态随机访问存储器型现场可编程门阵列(FPGA)器件空间辐照效应失效机理的基础上,详细论述FPGA辐照效应测试系统内部存储器测试、功能测试及功耗测试的实现原理,给出了系统的软硬件实现方法。所建立的系统可以测试FPGA器件的配置存储器翻转截面、块存储器翻转截面、功能失效截面、闭锁截面等多个参数,其长线传输距离达到50 m以上,最大可测门数达到了100万门,为FPGA辐照效应研究提供了测试平台。     

A simultaneous generation of QKD and QDC via optical memory array for distributed network security

We propose a novel system of a simultaneous generation of continuous variable quantum key distribution (QKD) and quantum dense coding (QDC) via an optical memory array. The optical memory system is formed by using an array waveguide incorporating a nano-ring resonator, whereas the different spatial light modes can be generated and stored within an optical memory unit. The polarized photon is formed and stored within a storing device, i.e. a ring resonator, whereas the different time slot entangled photons can be generated, transmitted and detected by the different subscriber in the distributed networks. By using the optical memory concept, the continuous variable quantum key distribution is provided. Furthermore, the use of quantum dense coding via time division multiplexing paths, i.e. different time slot, is also plausible. The advantage of the proposed system is that the quantum key distribution can provide the network top security with high capacity and safety, which is the large demand of usage in the public networks.     

Electrical characterization of MOS memory devices containing metallic nanoparticles and a high-k control oxide layer

We study the electrical characteristics of a MOS structure in which Pt nanoparticles are embedded. This structure has a tunneling oxide of 3.5 nm in thickness (a SiO₂ thermal oxide layer) on top of a Si wafer, and a control oxide of 27 nm (HfO₂ layer deposited by electron gun evaporation). The nanoparticles are deposited on the SiO₂ layer with electron gun evaporation, at room temperature. The electrical study of the structures demonstrates that the “write” process is initiated at low electric fields. This indicates that this type of memory structure can be very promising for the fabrication of high speed MOSFET memory devices with low power consumption. Our charge retention measurements also show promising results.     

An optimal process of femtosecond laser cutting of NiTi shape memory alloy for fabrication of miniature devices

The mechanical properties of NiTi shape memory alloy (SMA) components are sensitive to thermal influence during laser machining. To make the femtosecond laser cutting of NiTi material meet the strict fabrication requirements for miniature SMA devices with high precision, complex patterns and minimal heat affected zone (HAZ) along with high throughput, we report an optimal process of sideways-movement path planning in this article. Femtosecond laser processing of NiTi SMA using the fundamental wavelength of 775 nm from a Ti:sapphire laser along with its second and third harmonic irradiations were systematically investigated. We observed that the main impact of ultrashort laser pulse induced air breakdown on materials processing was beam widening. The laser beam at fundamental wavelength suffered less widening than its harmonic wavelengths. Femtosecond laser machining of metals is still basically a thermal mechanism. High ablation rates at higher laser fluences causes significant recast formation, while lower fluences resulted in better cutting quality at the expense of efficiency. The optimal process involving the method of sideways-movement path planning enables recast-free high-precision features at higher laser fluences with better throughput.     

静态随机访问存储器型现场可编程门阵列辐照效应测试系统研制

 在调研静态随机访问存储器型现场可编程门阵列(FPGA)器件空间辐照效应失效机理的基础上,详细论述FPGA辐照效应测试系统内部存储器测试、功能测试及功耗测试的实现原理,给出了系统的软硬件实现方法。所建立的系统可以测试FPGA器件的配置存储器翻转截面、块存储器翻转截面、功能失效截面、闭锁截面等多个参数,其长线传输距离达到50 m以上,最大可测门数达到了100万门,为FPGA辐照效应研究提供了测试平台。     

Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5~nm in diameter were clearly embedded in the SiO₂ layer on p-type Si (100). Capacitance--voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8~V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance--time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10$^{4}$~s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures.     

基于Cu/SiO_x/Al结构的阻变存储器多值特性及机理的研究

采用氧化硅材料构建了Cu/SiOx/Al的三明治结构阻变存储器件.用半导体参数分析仪对其阻变特性进行测量,结果表明其具有明显的阻变特性,并且通过调节限制电流,得到了四个稳定的阻态,各相邻阻态的电阻比大于10,并且具有良好的数据保持能力.在不同温度条件下对各个阻态进行电学测试及拟合,明确了不同阻态的电子传输机理不尽相同:阻态1和阻态2为欧姆传导机制,阻态3为P-F(Pool-Frenkel)发射机制,阻态4为肖特基发射机制.根据电子传输机制,建立了铜细丝导电模型并对Cu/SiOx/Al阻变存储器件各个阻态的电致阻变机制进行解释.     

Large‐area Ag nanorod array substrates for SERS: AAO template‐assisted fabrication,functionalization, and application in detection PCBs

Highly ordered arrays of thiolated β‐cyclodextrin (HS‐β‐CD) functionalized Ag‐nanorods (Ag‐NRs) with plasmonic antennae enhancement of electrical field have been achieved for encapsulation and rapid detection of polychlorinated biphenyls (PCBs). The large‐area ordered arrays of rigid Ag‐NRs supported on copper base were fabricated via porous anodic aluminum oxide (AAO) template‐assisted electrochemical deposition. The inter‐nanorod gaps between the neighboring Ag‐NRs were tuned to sub‐10 nm by thinning the pore‐wall thickness of the AAO template using diluted H₃PO₄. The nearly perfect large‐area ordered arrays of Ag‐NRs supported on copper base render these systems excellent in surface‐enhanced Raman scattering (SERS) performance with uniform electric field enhancement, as testified by the SERS spectra and Raman mappings of rhodamine 6 G. Furthermore, the Ag‐NRs were functionalized with HS‐β‐CD molecules so as to capture the apolar PCB molecules in the hydrophobic cavity of the CD. Compared to the ordinary undecorated SERS substrates, the HS‐β‐CD modified Ag‐NR arrays exhibit better capture ability and higher sensitivity in rapid detection of PCBs. Copyright © 2012 John Wiley & Sons, Ltd.     

基于Si掺杂Sb2Te3薄膜的相变存储器研究

采用磁控三靶(Si，Sb及Te)共溅射法制备了Si掺杂Sb₂Te₃薄膜，作为对比，制备了Ge₂Sb₂Te₅和Sb₂Te₃薄膜，并且采用微加工工艺制备了单元尺寸为10μm×10μm的存储器件原型来研究器件性能.研究表明，Si掺杂提高了Sb₂Te₃薄膜的晶化温度以及薄膜的晶态和非晶态电阻率，使得其非晶态与晶态电阻率之比达到10⁶，提高了器件的电阻开/关比；同Ge₂Sb₂Te₅薄膜相比，16at% Si掺杂Sb₂Te₃薄膜具有较低的熔点和更高的晶态电阻率，这有利于降低器件的RESET电流.研究还表明，采用16at% Si掺杂Sb₂Te₃薄膜作为存储介质的存储器器件原型具有记忆开关特性，可以在脉高3V、脉宽500ns的电脉冲下实现SET操作，在脉高4V、脉宽20ns的电脉冲下实现RESET操作，并能实现反复写/擦，而采用Ge₂Sb₂Te₅薄膜的相同结构的器件不能实现RESET操作. 关键词： 相变存储器 硫系化合物 2Te₃薄膜')" href="#">Si掺杂Sb₂Te₃薄膜 SET/RESET转变