退火温度对声表面波检测器电极 表面粗糙度的影响*

该文实验研究了退火温度对声表面波检测器电极表面粗糙度的影响。电极表面的粗糙度随着退火温度不同而变化,实验中分别选择常温(25?C)、200?C和300?C作为退火温度对两种镀膜方式制备的声表面波器件进行退火,最后得到退火温度和电极表面粗糙度的对应关系。从实验结果来看,退火温度为200?C时,得到的电极表面粗糙度最大。该研究为声表面波检测器表面粗糙度优化及灵敏度提升提供了基础。     

The influence of char surface oxidation on thermal annealing and loss of combustion reactivity

Thermal annealing associated with heat treatment of coal chars affects gasification reactivity and levels of unburned carbon in residual ash from coal-fired furnaces. The present study addresses the effect of char surface oxidation, occurring upon exposure to oxygen, on the course of thermal annealing, and related loss of combustion reactivity. This goal is pursued by comparing the extent of thermal annealing suffered by coal char upon heat treatment in a nitrogen atmosphere with that of chars that underwent oxidation prior to or during heat treatment. Oxidation of char was accomplished by supplying single or multiple pulses of air during the heat treatment, which were sufficient to oxidize the char surface but small enough to limit carbon gasification to less than 5%. The extent of thermal annealing was characterized both in terms of the loss of combustion reactivity and of the development of structural anisotropy of char samples, investigated by HRTEM. Results of the present study confirm that heat treatment reduces oxyreactivity of char samples, the effect being more pronounced at temperatures exceeding 1200 °C. Oxidation of samples mitigates the effects of heat treatment, as demonstrated by the smaller loss of gasification reactivity and by the more limited development of structural anisotropy of oxidized samples. Correspondingly, elemental analysis of samples indicates the formation of stable surface oxides upon oxidation, that are subsequently desorbed upon heat treatment. At temperatures exceeding 1200 °C, the effect of oxidation vanishes. Results are analysed and discussed in the light of the possible hindrance of thermal annealing due to the formation of stable surface oxides and of the parallel modifications occurring to the ash constituents.     

The influence of chemical treatment and thermal annealing on AlxGa1−xN surfaces: An XPS study

The influences of chemical treatment and thermal annealing of Al_xGa_1−xN (x = 0.20) have been investigated by X-ray photoelectron spectroscopy (XPS). XPS analysis showed that successive chemical treatments and annealing produced changes in the stoichiometry of the Al_xGa_1−xN surface, with the surface concentration of N increasing and Al and Ga decreasing with increasing temperature. Band bending occurred at the Al_xGa_1−xN surface, in parallel with the observed changes in stoichiometry. These results are discussed in the context of the creation of surface states via the activation of vacancies and induced by defects. These findings point towards the possibility of selecting and/or engineering the band structure at Al_xGa_1−xN surfaces through a combination of surface preparation and annealing.     

真空退火对L1_0-CoPt薄膜结构、磁性及表面形貌的影响

本文利用磁控溅射的方法制备了L1_0-CoPt薄膜,研究了不同退火条件对薄膜结构、磁性以及表面形貌的影响.通过优化退火温度、保温时间以及升温速率,制备出了具有大矫顽力、高矩形比、粗糙度小的垂直各向异性L1_0-CoPt薄膜.实验发现,较高的退火温度有利于克服CoPt薄膜有序化转变所需要的能量,同时适当延长退火时间可以提高CoPt薄膜的扩散系数,从而促使无序相fcc转化为L1_0有序相fct结构.此外,退火过程中减缓升温速率可以有效减小薄膜粗糙度,从而形成平整连续膜.     

介质pH对银基上4-甲基-4H-3-巯基-1,2,4-三氮唑成膜结构和缓蚀性能影响的SERS和电化学研究

在不同pH介质中,缓蚀试剂4-甲基-4H-3-巯基-1,2,4-三氮唑(4-MTTL)都能在银基底上形成自组装膜。SERS光谱表明:当pH=3时,4-MTTL分子是以硫醇式,通过两个氮原子为吸附位点,以较平躺方式在银表面构筑自组装膜;当介质为pH=7和pH=11时,4-MTTL以硫醇式,通过氮和硫原子为吸附位点倾斜或垂直方式作用于银表面。由于后者的吸附方式比前者更为垂直于表面,所以形成的膜中分子排列更为致密。电化学极化实验也表明,在pH=3的条件下,形成的4-MTTL单层有更正的腐蚀电位;在pH=11时,构筑的膜缓蚀能力强于pH=7的。并由电化学交流阻抗数据解析了相应的缓蚀机理。     

Band structure of surface states and resonances for clean Cu(1 1 0) surface

We have used the layer KKR method to calculate the Shockley and Rydberg surface states and resonances for Cu(1 1 0) for a given model of the surface potentials. This method has not been used before to predict all of the surface band structure for the energy range from the bottom of the conduction band to ∼7 eV above the vacuum level. The previous methods that used only local electron interactions in ab initio calculations could not produce the Rydberg surface barrier bands while those relying on nearly-free-electron parameterisation of bands could not deal with d-bands.     

Ab initio calculations of surface structure and electronic properties caused by adsorption of Ca atoms on a Si(1 1 0) surface

The adsorption of Ca metals onto a Si(1 1 0) surface has been theoretically investigated by first-principle total-energy calculations. We employed a local density approximation of the density functional theory as well as a pseudopotential theory to study the atomic and electronic properties of the Ca/Si(1 1 0) structure. The (1×1) and (2×1) surface structures were considered for Ca coverages of 0.5 and 0.25 ML, respectively. It is found that the (1×1) phase is not expected to occur even for rich Ca regime. It was found that Ca adatoms are adsorbed on top of the surface and form a bridge with the uppermost Si atoms. The most stable structure of Ca/Si(1 1 0)-(2×1) surface produces a semiconducting surface band structure with a direct band gap that is slightly smaller than that of the clean surface. We have observed one filled and two empty surface states in the gap region. These empty surface states originated from the uppermost Si dangling bond states and the Ca 4s states. Furthermore, the Ca-Si bonds have an ionic nature with almost complete charge transfer from Ca to the surface Si atoms. The structural parameters of the ground state atomic configuration are detailed and compared with the available results of metal-adsorbed Si(1 1 0) surface, Ca/Si(0 0 1), and Ca/Si(1 1 1) structures.