Multiple superconducting gap and anisotropic spin fluctuations in iron arsenides: Comparison with nickel analog

We present extensive ⁷⁵As NMR and NQR data on the superconducting arsenides PrFeAs_0.89F_0.11, LaFeAsO_0.92F_0.08, LiFeAs and Ba_0.72K_0.28Fe₂As₂ single crystal, and compare with the nickel analog LaNiAsO_0.9F_0.1. In contrast to LaNiAsO_0.9F_0.1 where the superconducting gap is shown to be isotropic, the spin lattice relaxation rate 1/T₁ in the Fe-arsenides decreases below T_c with no coherence peak and shows a step-wise variation at low temperatures. The Knight shift decreases below T_c and shows a step-wise T variation as well. These results indicate spin-singlet superconductivity with multiple gaps in the Fe-arsenides. The Fe antiferromagnetic spin fluctuations are anisotropic and weaker compared to underdoped copper-oxides or cobalt-oxide superconductors, while there is no significant electron correlations in LaNiAsO_0.9F_0.1. We will discuss the implications of these results and highlight the importance of the Fermi surface topology.     

Optical phonon modes and structure of ZnGa2Se4 and ZnGa2S4

We present the infrared and Raman study of the optical phonon modes of the defective compounds ZnGa₂Se₄ and ZnGa₂S₄. Most of the compounds have been found to crystallize in the thiogallate structure (defect chalcopyrite) with space group where all cations and vacancies are ordered. For some Zinc compounds a partially disordered cationic sublattice with various degrees of cation and vacancy statistical distribution, which lead to the higher symmetry (defect stannite), has been reported. For ZnGa₂Se₄ we have found three modes of A symmetry, showing Raman activity only. In addition, we have observed each five modes of B and E symmetry, showing infrared as well as Raman activity. The number of modes and their symmetry assignment, based on polarized measurements, clearly indicate space group for the investigated crystals of ZnGa₂Se₄.Regarding ZnGa₂S₄ we have found three modes exclusively showing Raman activity (2A⊕1B₁), and only eight modes showing infrared as well as Raman activity (3B₂⊕5E). The assignment of the modes has been derived by analyzing the spectral positions of the vibrational modes in comparison to a number of compounds. From the number and symmetry assignment of the optical phonon modes we confirm that ZnGa₂S₄ most likely crystallizes in space group .     

Electronic and elastic properties of a double perovskite slab-rocksalt layer of Eu2SrAl2O7 investigated by LSDA+U

The electronic structure and elastic properties of a double perovskite slab-rocksalt layer compounds of Eu₂SrAl₂O₇ were calculated by local- (spin-) density approximation [L(S) DA] band theory with Hubbard term of U. We used and for the calculations. The band gap of Eu₂SrAl₂O₇ is 4.8 eV. Both of Eu-O and Al-O bonds have strong covalent character and Sr-O is a perfect ionic bond. The full set elastic constants indicate the elastic modulus of Eu₂SrAl₂O₇ is 224 and 240 GPa by calculation and experiment, respectively.     

Optical properties of the iron-chalcogenide superconductor FeTe0.55Se0.45

The complex optical properties of the iron-chalcogenide superconductor FeTe_0.55Se_0.45 with T_c=14 K have been examined over a wide frequency range for light polarized in the Fe-Te(Se) planes above and below T_c. At room temperature the optical response may be described by a weakly interacting Fermi liquid; however, just above T_c this picture breaks down and the scattering rate takes on a linear frequency dependence. Below T_c there is evidence for two gap features in the optical conductivity at and . Less than 20% of the free carriers collapse into the condensate for T?T_c, and this material is observed to fall on the universal scaling line for a BCS dirty-limit superconductor in the weak-coupling limit.     

The effect of the Bi source on optical properties of Bi2Te3 nanostructures

nanostructures were synthesized by using different Bi sources via a simple solvothermal process, in which and BiCl₃ were used as the Bi sources. Optical properties of nanostructures prepared with and BiCl₃ as the Bi sources were investigated by micro-Raman spectroscopy. The Raman scattering spectrum of hexagonal nanoplates prepared by using as the Bi source shows that the infrared (IR) active mode A_1u, which must be odd parity and is Raman forbidden for bulk crystal due to its inversion symmetry, is greatly activated and shows up clearly in the Raman scattering spectrum. We attribute the appearance of the infrared active A_1u mode in the Raman spectrum to crystal symmetry breaking of hexagonal nanoplates. However, the Raman scattering spectrum of nanostructures with irregular shape prepared by using as the Bi source only exhibits the two characteristic Raman modes of crystals. Micro-Raman measurements on nanostructures with different morphologies offer us a potential way to tailor optical properties of nanostructures by controlling the morphologies of the nanostructures, which is very important for practical applications of nanostructures in thermoelectric devices.     

Low-temperature measurements of magnetic susceptibility and specific heat of Eu2Ti2O7—An XY pyrochlore

Magnetic susceptibility obtained from magnetization measurement (for fields H=0.1 and 1.0 T) of polycrystalline Eu₂Ti₂O₇ shows two distinct features. Firstly, increases on cooling below 300 K and attains a temperature-independent constant value at 68 K (T_max). Secondly, shows an antiferromagnetic increase below 4.9±0.1 K. The former behavior is explained by crystal field (CF) theory. CF levels and wave functions of ground and excited states are determined accurately from analyses of and earlier reported Mössbauer and optical spectra. Analysis of vs. 1/T curve at low temperatures gives the classical nearest-neighbor exchange interaction J^cl=−0.76 K and a weak dipolar interaction D_nn=0.0056 K. C_P of polycrystalline sample of Eu₂Ti₂O₇ and Y₂Ti₂O₇ are measured between 1.8-35 and 1.8-120 K respectively and θ_D vs. T (K) curves are calculated. At 4 K, θ_D of Eu₂Ti₂O₇ shows a kink and dC_P/dT curve show a maximum. Optical results show energy exchange between Eu³⁺ ions at intrinsic and extrinsic (defect) sites via super-exchange interaction at low temperature which may account for the observed anomalous behavior of and C_P.     

Low-temperature lattice thermal expansion of the II-VI semiconductor ZnSe

The low-temperature lattice thermal expansion of the wide gap semiconductor ZnSe is investigated using the quasi-harmonic theory of thermal expansion. The generalized Grüneisen parameters (GPs) of the elastic waves propagating in different directions with respect to the [001] crystallographic axis are calculated using the second-and third-order elastic constants. The values of the generalized GPs γ_j are generally positive except for γ₂ from θ=25 to 65°. The Brugger gamma is calculated and the low-temperature limit of the Grüneisen gamma is determined using the procedure of Menon and Rao. The low-temperature limit has been obtained as 0.46 for ZnSe. The volume expansion is expected to be positive down to absolute zero for ZnSe, since is positive.     

Quantum critical behaviour in doped Y bB12 studied by ab initio calculations

The Kondo insulator Y bB₁₂ is known to undergo a transition to the metallic state with doping or under an external magnetic field. Within the virtual crystal approximation (VCA), we calculated the occupation of the Yb 4f and 5d shells, and , as a function of doping of Y bB₁₂ with the rare earths Tm and Lu. We found that exhibits an anomalous change at the critical concentration of the dopant, in agreement with experiment ( for Y b_1−xLu_xB₁₂ and for Y b_1−xTm_xB₁₂). We suggest that the critical behaviour seems to be strictly connected with the change of and in consequence the change of the Yb valency.     

Ac magnetotransport in La0.7Sr0.3Mn0.95Fe0.05O3 at low dc magnetic fields

We report the ac electrical response of La_0.7Sr_0.3Mn_1−xFe_xO₃(x=0.05) as a function of temperature, magnetic field (H) and frequency of radio frequency (rf) current (). The ac impedance (Z) was measured while rf current directly passes through the sample as well as in a coil surrounding the sample. It is found that with increasing frequency of the rf current, Z(T) shows an abrupt increase accompanied by a peak at the ferromagnetic Curie temperature. The peak decreases in magnitude and shifts down with increasing value of H. We find a magnetoimpedance of for at around room temperature when the rf current flows directly through the sample and when the rf current flows through a coil surrounding the sample. It is suggested that the magnetoimpedance observed is a consequence of suppression of transverse permeability which enhances skin depth for current flow. Our results indicate that the magnetic field control of high frequency impedance of manganites is more useful than direct current magnetoresistance for low-field applications.     

Local magnetization study of the first-order superconducting transition in CeCoIn5

We report local magnetization measurements on the heavy fermion superconductor CeCoIn₅ using a micro-Hall probe. Below a critical point T₀ (), the local magnetization shows a clear jump at the superconducting transition temperatures for both H∥a and H∥c, indicating that the phase transition at the upper critical field H_c2 becomes a first-order phase transition. In addition, we observed an undershoot behavior of magnetization jump above (H∥c), which suggests a rapid change of textured superconducting structure with vortices and the nodal planes expected in the Fulde-Ferrell-Larkin-Ovchinnikov state.     

Harmonic oscillator model and determination of optical parameters

The Lorentz dispersion theory and the Kramers-Kronig transformation were widely used to determine optical constants and oscillator parameters from reflectivity spectrum. Each range of data correspond to a different oscillation. Since the experimental data is in the limited range, this technique can be used to subtract information from unmeasured range. The inter-band optical properties in UV region have been investigated. Hydrogenated amorphous silicon nitride thin film was used as an example. The reflectivity spectrum of a-SiN_x:H was used to obtain the energy band gap in both standard and this technique. The measurement is in the UV-visible range. The optical energy gap value was found to be about for the sample illustrated, and these values are consistent for both techniques.     

Giant optical anisotropy in R-plane GaN/AlGaN quantum wells caused by valence band mixing effect

This study investigates the optical anisotropy spectrum in the R-plane (i.e., the -oriented layer plane) of GaN/Al_0.2Ga_0.8N quantum wells of different widths. The optical matrix elements in the wurtzite quantum wells are calculated using the k⋅p finite difference scheme. The calculations show that the valence band mixing effect produces giant in-plane optical anisotropy in -oriented GaN/Al_0.2Ga_0.8N quantum wells with a narrow width. The nature of the in-plane optical anisotropy is found to be dependent on the well width. Specifically, it is found that the anisotropy changes from x^′-polarization to y^′-polarization as the well width increases.     

Effect of Mn-doping on the electrical properties of Cu2GeSe3

In this work we report the temperature dependence of the resistivity ρ of p-Cu₂GeSe₃ and manganese-doped p-Cu₂GeSe₃ at low temperature. It was found that for a intrinsic sample ρ obeys the Shklovskii-Efros-type variable-range hopping resistivity law in the temperature range from 4 to 63 K. This behaviour is governed by generation of a Coulomb gap Δ=78 meV in the density of localized states. We find a low activation term T₀=0.24 K, which is an indication of a large localization length ξ. For Mn-doped sample a metal-insulator transition (MIT) is observed at T=65 K. On the basis of the Mott criterion for metal-insulator transition, the critical carrier density n_c is determined. From the analysis of resistivity data it is concluded that Mn acts as acceptor impurity.     

Spin-Peierls and incommensurate states in layered S=1/2 system TiOCl

We demonstrate that TiOCl is a good model inorganic system to investigate spin-Peierls state. Our ³⁵Cl and ^47,49Ti NMR data show that a pseudo spin-gap behavior below T*=135 K precedes successive phase transitions at T_c=94 K and into a singlet spin-Peierls ground state with a large energy gap E_g/k_B=430 K.     

Electronic structure and band gap of the negative charge-transfer material Sr3Fe2O7

We studied the electronic structure of the Sr₃Fe₂O₇ compound using X-ray photoelectron spectroscopy (XPS). The charge-transfer satellites in the Fe 2p XPS spectra were analyzed using standard cluster model calculations. The analysis indicates that Sr₃Fe₂O₇ is in the negative charge-transfer regime, and that the ground state is dominated by the configuration (where denotes an O 2p hole in the oxygen band). These results are similar to those found in the related SrFeO₃ and Sr₂FeO₄ compounds. The band gap of the Sr₃Fe₂O₇ compound is split off by the relatively large value of the p-d transfer integral T_σ. The lowest lying excitations are and consequently the band gap is of the p-p type. The band gap in the Sr_n+1Fe_nO_3n+1 series can be understood taking into account the trend in the O 2p bandwidths.     

Determination of electrical and solar cell parameters of FTO/CuPc/Al Schottky devices

A Schottky structure is fabricated using CuPc sandwiched between fluorinated tin oxide (FTO) and aluminium electrodes. The electrical properties of the device are measured at room temperature. Permittivity of the device is calculated from capacitance measurements. The saturation current density, , diode ideality factor, n=3.02 and barrier height, are determined for the Schottky juction. Reverse bias versus is interpreted in terms of Schottky emission. Solar cell parameters are determined from the J-V characteristics. Power conversion efficiency, η of 0.0024% is obtained for the cell. Band gap energy of the material is determined from UV-visible absorption spectrum.     

Theoretical study of local lattice structure of Mn in perovskite fluorides A2MF4 (A=K, Rb; M=Mg, Zn, Cd) series

A theoretical method for investigating the inter-relation between the molecular structure and electronic structure has been established on the basis of the 252×252 complete energy matrices for a 3d⁵ configuration ion in a tetragonal ligand field. By means of this method, which is independent of the X-ray diffraction, the local structure of the paramagnetic Mn²⁺ ion in perovskite fluorides A₂MF₄ (A=K, Rb; M=Zn, Mg, Cd) are determined directly by analyzing the EPR spectrum of octahedral Mn²⁺ center in A₂MF₄ crystals and the optical absorption spectrum of the (MnF₆)⁴⁻ cluster. It is shown that, comparing with the octahedral cubic structure, the local micro-structure in the vicinity of Mn²⁺ displays an elongated distortion when and a compressed distortion when , and ΔR vs. as well as ΔR vs. in the distortion region is, respectively, approximately linear. Simultaneously, the theoretical zero-field-splitting parameters , and are in good agreement with the experimental values.