Conductivity anisotropy of a TlGaTe<Subscript>2</Subscript> chain single crystal under hydrostatic pressure

Pressure and temperature dependences of the conductivity anisotropy of TlGaTe₂ chain single crystals have been investigated. It has been found that the conductivity anisotropy of TlGaTe₂ can be controlled by choosing the values of temperature and pressure. The temperatures (216, 193, and 77 K) and corresponding pressures (0, 0.31, and 0.71 GPa) have been determined, at which the conductivity of the TlGaTe₂ single crystal becomes isotropic.     

Temperature-dependent capacitance–voltage biasing of the highly tunable TlGaTe2 crystals

The temperature effects on the capacitance–voltage characteristics as well as the room temperature capacitance–frequency characteristics of TlGaTe₂ crystals are investigated. A very wide range of linearly varying tunable capacitance from 6.0 μF to 60 pF was recorded. The capacitance–voltage characteristics, being recorded in the temperature range of 290–380 K, revealed a linear increase in the build in voltage associated with exponential decrease in the density of non-compensated ionized carriers with increasing temperature. The high temperature (up to 380 K) biasing ability, the linear tunability and the high dielectric constant values (∼10³) make the TlGaTe₂ crystals applicable in microelectronic components.     

Deformation of single crystal sample using D-DIA apparatus coupled with synchrotron X-rays: In situ stress and strain measurements at high pressure and temperature

We present a technique for high pressure and high temperature deformation experiment on single crystals, using the Deformation-DIA apparatus at the X17B2 beamline of the NSLS. While deformation experiments on polycrystalline samples using D-DIA in conjunction with synchrotrons have been previously reported, this technical paper focuses on single crystal application of the technique. Our single crystals are specifically oriented such that only [1 0 0] slip or [0 0 1] slip in (0 1 0) plane is allowed. Constant applied stress (sigma <300 MPa) and specimen strain rates were monitored using in situ time-resolved X-ray diffraction and radiography imaging, respectively. Rheological properties of each activated slip system in the crystals can be revealed using this technique. In this paper, we describe the principle of sample preparation (e.g. [1 1 0]_c and [0 1 1]_c orientations) to activate specific slip systems (i.e. [1 0 0](0 1 0) and [0 0 1](0 1 0), respectively), stress measurement and procedures of the deformation experiments.     

Electrical properties of high Curie temperature (1−x)Pb(In1/2Nb1/2)O3-xPbTiO3 single crystals grown by the solution Bridgman technique

0.65Pb(In_1/2Nb_1/2)O₃-0.35PbTiO₃ (PINT65/35) (starting composition) single crystals were grown successfully through the solution Bridgman technique using PbO flux and PMNT67/33 seed crystals. Because of the composition variation, the final composition of achievable crystals is in a range of 0.32-0.34 with the corresponding T_c range of 265-269 °C. The (001) plates of as-grown PINT66/34 single crystals show high Curie temperature (T_c=269 °C) and rhombohedral-tetragonal phase transition temperature (T_rt=134 °C). Besides, good electrical properties with high dielectric constant (ε>3000), low dielectric loss (tan δ∼1.2%), high piezoelectric constant (d₃₃∼2000 pC/N) and large electromechanical coupling factor (k_t≈59%) at room temperature have been obtained on the (001) plates. The sound velocity, acoustic impedance and other piezoelectric parameters were also measured on the (001) plates in this study, which provide us more detailed information about PINT66/34 single crystals.     

Growth of textured nonstoichiometric MoTe2 films from Mo/Te layers and their use as precursor in the synthesis of MoTe2−xSx films

Molybdenum ditelluride, MoTe₂, thin films have been prepared on a glass substrate by depositing first a layer of Mo of 1 μm thickness by rf sputtering and then layers of tellurium of 4 μm thickness followed by annealing, in a vacuum sealed Pyrex tube, at 823 K for one hour. The films have been studied by X-ray diffraction, electron microprobe analysis, scanning electron microscopy and for optical and electrical properties. This indicated that the films so prepared are well crystallized and textured with a hexagonal structure similar to 2H-MoS₂. However, the film is non stoichiometric due to the presence of small amounts of oxygen. The optical properties are in good agreement with those of single crystals and film deposited by other means. The room temperature conductivity is of the same order of magnitude as that of single crystals. Finally, MoTe₂ has been used as a precursor for the growth of MoTe_2−xS_x films.     

Effect of ionizing radiation on the dielectric characteristics of TlInSe<Subscript>2</Subscript> and TlGaTe<Subscript>2</Subscript> single crystals

The temperature dependences of the electrical conductivity and the permittivity of TlInSe₂ and TlGaTe₂ crystals unirradiated and irradiated with 4-MeV electrons at a doze of 10¹⁶ cm⁻² have been investigated. It has been established that electron irradiation leads to a decrease in the electrical conductivity σ and the permittivity ɛ over the entire temperature range under study (90–320 K). It has been revealed that the TlInSe₂ and TlGaTe₂ single crystals undergo a sequence of phase transitions characteristic of crystals of this type, which manifest themselves as anomalies in the temperature dependences σ = f(T) and ɛ = f(T). Electron irradiation at a doze of 10¹⁶ cm⁻² does not affect the phase transition temperatures of the crystals under investigation.     

Synthesis and characterization of porous silicon layers for 1D photonic crystal application

In this paper, we studied the optical and physical properties of electrochemically prepared porous silicon layers. The atomic force microscopy analysis showed that the etching depth, pore diameter and surface roughness increase as the etching time increased from 30 to 50 mA/cm². By tuning two current densities J₁ = 50 mA/cm² and J₂ = 30 mA/cm², two samples of 1D porous silicon photonic crystals were fabricated. The layered structure of 1D photonic crystals has been confirmed by scanning electron microscopy measurement which showed white and black strips of two distinct refractive index layers. Finally, the measured reflectance spectra of 1D porous silicon photonic crystals were compared with simulated results.     

ESR spectra of Eu centers in defect Ga2S3 single crystals

In this paper, the author presents the results of measurements of the low-temperature and angular dependences of the ESR spectra of Eu²⁺ centers in defect Ga₂S₃ single crystals in the temperature range 8–29 K and for 0–180° orientations of the static magnetic field. The electron structure of impurity ¹⁵¹Eu atoms in Ga₂S₃:Eu single crystals has been studied by using the ESR method at different doping proportions of Eu atoms. Ga₂S₃ single crystals were grown from the melt using the Bridgman method. The Eu concentration was determined by atomic absorption analysis and X–ray fluorescence analysis (XRFA). By investigation on the ESR spectra, the author has first determined the values of charge states for Eu, which have turned out to be a Eu²⁺(4f⁷) ion with spin S=7/2, g=4.18±0.02 and concentration of the states of Eu N=6.3×10¹⁴ cm⁻³.     

Preparation and properties of spray-deposited ZnIn2Se4 nanocrystalline thin films

Zinc indium selenide (ZnIn₂Se₄) thin films have been deposited onto amorphous and fluorine doped tin oxide (FTO)-coated glass substrates using a spray pyrolysis technique. Aqueous solution containing precursors of Zn, In, and Se has been used to obtain good quality deposits at different substrate temperatures. The preparative parameters such as substrate temperature and concentration of precursors solution have been optimized by photoelectrochemical technique and are found to be 325 °C and 0.025 M, respectively. The X-ray diffraction patterns show that the films are nanocrystalline with rhombohedral crystal structure having lattice parameter a=4.05 Å. The scanning electron microscopy (SEM) studies reveal the compact morphology with large number of single crystals on the surface. From optical absorption data the indirect band gap energy of ZnIn₂Se₄ thin film is found to be 1.41 eV.     

High-pressure and optical properties of lanthanum magnesium hexa-aluminate doped with Mn (LMA:Mn) laser material

The effect of hydrostatic pressure on the emission spectra and fluorescence lifetime (τ) of Mn²⁺ in LaMgAl₁₁O₁₉ (LMA) crystals up to 101 kbar has been studied at room temperature. From the position of the peak (⁴T₁ → ⁶A₁ transition) in the emission spectra, we estimated that the pressure induced red-shift. A variation, slowly decreasing, in the fluorescence lifetime (τ) values for ⁴T₁ → ⁶A₁ transition was observed. The pressure-induced red-shift and lifetime variation could be described by simple models. In the considered pressure range (0-101 kbar), a good agreement between the experimental values and theoretically predicted values was obtained.     

Synthesis of Co2N by a simple direct nitriding reaction between nitrogen and cobalt under 10 GPa and 1800 K using diamond anvil cell and YAG laser heating

Synthesis of cobalt nitrides has been tried in a supercritical nitrogen fluid at high pressure (about 10 GPa) and high temperature (about 1800 K) using diamond anvil cell and YAG laser heating system. We have succeeded to synthesize a single phase of the CFe₂-type Co₂N easily in a short time. This is the first synthesis by a simple reaction between the pure cobalt and pure nitrogen (supercritical fluid nitrogen). The cell parameters of the synthesized Co₂N are a=4.662(9) Å, b=4.332(5) Å and c=2.749(9) Å, respectively.     

Growth and characterization of a new organic NLO material: Glycine nitrate

Single crystals of glycine nitrate [(C₂H₆NO₂)⁺ · (NO₃)⁻] were grown using submerged seed solution method. The crystals were characterized by using single crystal X-ray diffraction and density measurements. Spectroscopic, thermal and optical studies were carried out for analyzing the presence of the functional groups, thermal stability, decomposition and transparency of the sample. These studies showed that the crystals are thermally stable upto 145 °C and transparent for the fundamental and second harmonic generation of Nd:YAG (λ = 1064 nm) laser. Second harmonic generation (SHG) conversion efficiency was investigated to explore the NLO characteristics of this material. Microhardness and dielectric studies were also carried out.     

Structural and physical properties of SrMn2As2

SrMn₂As₂ single crystals were grown by the Sn flux method. Structural features of these crystals were characterized by means of X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The XRD results show that the single crystal has a rhombohedral structure and grows along the c-axis direction. The microstructure and layered structural features of this material have been examined by SEM and high-resolution TEM observations. The measurements of in-plane resistivity as a function of temperature demonstrate that SrMn₂As₂ undergoes a phase transition of semiconductor-insulator at a low temperature; the active energies are estimated to be Δ=0.64 and 0.29 eV for two distinct regions. Magnetic measurements show a clear antiferromagnetic (AFM) transition at about T_N=125 K. Therefore, the SrMn₂As₂ material is an AFM insulator at low temperatures and could be a potential parent compound for superconductors.     

Some studies about the green and red light emitting structures in NaCl1−xBrx:Mn

In this work we present the results obtained from the luminescence spectra and X-ray diffraction as well as transmission electron microscopy, at room temperature on crystals of NaCl_1−xNaBr_x:MnCl₂:0.3% (x=0.00, 0.05, 0.25, and 0.50). The results suggest the existence of structures between the crystal planes (1 1 1) and (2 0 0), which may be associated with different types of Mn²⁺ arrangements, such as dipole complexes, octahedral and rhombohedral structures as well as other possible nanostructures that include mixtures of bromine/chlorine ions. These are responsible for the emission spectra of “as grown” crystals consisting of maxima around 500 nm and 600 nm. The green emission has been usually attributed to rhombohedral/tetrahedral symmetry sites; the present results point out that this is due to Mn–Cl/Br nanostructures with rhombohedral structure. On the other hand when the crystals are thermally quenched from 500 °C to room temperature the structures previously detected present changes. Only a red band appears around 620 nm if the samples are later annealed at 80 °C.     

EPR and optical investigation of VO(II) in Zn(C3H3O4)2(H2O)2 single crystals: An interstitial site

EPR spectroscopic investigations on single crystals of diaquabis[malonato(1-)-κ²O,O′] zinc(II) doped with VO(II) ion have been carried out at X-band frequencies and at 300 K. The single crystal, rotated along the three mutually orthogonally axes, has yielded spin-Hamiltonian parameters g and A as: g_xx=1.980, g_yy=1.972, g_zz=1.937 and A_xx=8.4, A_yy=6.1, A_zz=18.1 mT, respectively. These spin-Hamiltonian parameters reflect a slight deviation from axial symmetry to rhombic, which is elucidated by the interstitial occupation of vanadyl ions. The isofrequency plots and powder EPR spectrum have been simulated. The percentage of metal-oxygen bond has been estimated. The optical absorption spectrum exhibits four bands at 257, 592, 720 and 764 nm suggesting a C_4v symmetry. The admixture coefficients and bonding parameters have also been calculated by collaborating EPR data with optical data.     

Decoupling of the order-disorder and displacive contributions to the phase transition in NH4H(ClH2CCOO)2

The effects of hydrostatic pressure and substitution of Rb⁺for the ammonium cations on the ferroelectric phase transition temperature in NH₄H(ClH₂CCOO)₂ have been studied by electric permittivity measurements. The transition temperature (T_c) decreases with increasing pressure up to 800 MPa and the pressure coefficient dT_c/dp=−1.4×10⁻² [K/MPa] has been experimentally determined. The substitution of Rb⁺ for the ammonium cations has been shown to considerably lower the ferroelectric phase transition temperature T_c. In mixed crystals, additional electric permittivity anomaly has been clearly evidenced. The results are discussed assuming a model, which combines polarizability effects, related to the heavy ion units, with the pseudo-spin tunnelling.     

A new sodium samarium borate Na3Sm2(BO3)3

A new sodium samarium borate with composition Na₃Sm₂(BO₃)₃ (NSBO) has been synthesized by high temperature solid state reaction. The yellowish transparent single crystals of Na₃Sm₂(BO₃)₃ have been grown from the Na₂CO₃-H₃BO₃ flux system using the top-seeded solution growth (TSSG) method. X-ray diffraction analysis demonstrated that the NSBO crystals belong to orthorhombic systems and lattice parameters are a=5.0585 Å, b=11.0421 Å, c=7.0316 Å. The measurement of the infrared spectrum indicated that the basic anionic groups are the BO³⁻₃ groups. Furthermore, Na₃Sm₂(BO₃)₃ exhibits an optical second harmonic generation effect which is close to that of KDP (KH₂PO₄).     

Growth and spectral characterization of β-Ga2O3 single crystals

Beta gallium oxide (β-Ga₂O₃) single crystals were grown by the floating zone technique. The absorption spectra and the luminescence of the crystals were measured. The absorption spectra showed an intrinsic short cutoff edge around 260 nm with two shoulders at 270 and 300 nm. Not only the characteristic UV (395 nm), blue (471 nm) and green (559 nm) lights, but also the red (692 nm) light can be seen in the emission spectra. The deep UV light was attributed to the existing of quantum wells above the valence band and the red light was owed to the electron-hole recombination via the vicinity donors and acceptors.     

PLD of Fe3O4 thin films: Influence of background gas on surface morphology and magnetic properties

Ablation of Fe₃O₄ targets has been performed using a pulsed UV laser (KrF, λ = 248 nm, 30 ns pulse duration) onto Si(100) substrates, in reactive atmospheres of O₂ and/or Ar, with different oxygen partial pressures. The as-deposited films were characterised by atomic force microscopy (AFM), X-ray diffraction (XRD), conversion electron Mössbauer spectroscopy (CEMS) and extraction magnetometry, in order to optimise the deposition conditions in the low temperature range. The results show that a background mixture of oxygen and argon improves the Fe:O ratio in the films as long as the oxygen partial pressure is maintained in the 10⁻² Pa range. Thin films of almost stoichiometric single phase polycrystalline magnetite, Fe_2.99O₄, have been obtained at 483 K and working pressure of 7.8 × 10⁻² Pa, with a high-field magnetization of ∼490 emu/cm³ and Verwey transition temperature of 112 K, close to the values reported in the literature for bulk magnetite.     

Ultra high Q crystalline microcavities

We report on the fabrication technique of ultra high Q optical crystalline whispering gallery mode microresonators and discuss their properties. The technique is suitable for the majority of available optical crystals and for production of resonators with small size. To validate the method, we made CaF₂ resonators with Q factors exceeding 4 × 10⁸ and a diameter smaller than 100 μm. A single mode resonator has also been fabricated. Possible utilization of these new resonators in quantum optics is discussed.