Tuning the electronic and magnetic properties of the Si nanoribbons through dangling bond

Combined with three spin configurations, the effects of the dangling bonds on the electronic and magnetic properties of both zigzag edge and armchair edge Si nanoribbions (ZSiNR and ASiNR) have been investigated systematically by the first-principles calculations in the local spin-density function theory. The dangling bonds at one edge or both edges make ZSiNR to transform from ferromagnetic state of the perfect ZSiNR to antiferromagnetic state. However, the dangling bonds at one edge and both edges make ASiNR to transform from nonmagnetic semiconductor of the perfect ASiNR to ferromagnetic and antiferromagnetic metals, respectively. Furthermore, the magnetic moment of the ferromagnetic state increases for the perfect bare one edge and bare both edges successively for either ZSiNR or ASiNR.     

Dangling bond modulating the electronic and magnetic properties of zigzag SiGe nanoribbon

First-principles nonmagnetic calculations reveal a metallic character in zigzag SiGe nanoribbons (ZSiGeNRs) regardless of their width. The partial DOS projected onto the Si and Ge atoms of ZSiGeNR shows that a sharp peak at the Fermi level is derived from the edge Si and Ge atoms. The charge density contours show the Si–Ge bond is covalent bond, while for the Si–H bond and Ge–H bond, the valence charges are strongly accumulated around H atoms due to their stronger 1 s potential and the higher electronegativity of 2.20 than that of 1.90 for Si atom and 2.01 for Ge atom, so that a significant charge transformation from Si or Ge atoms to H atoms and thus an ionic binding feature. Spin–polarization calculations show that the band structures of ZSiGeNR are modified by the dangling bonds. Compared with perfect ZSiGeNR which is a ferrimagnetic semiconductor, the bands of the ZSiGeNRs with bare Si edge, bare Ge edge, and bare Si and Ge edges shift up and nearly flat extra bands appear at the Fermi level. The ZSiGeNR with bare Si edge or bare Ge edge is a ferrimagnetic metal, while ZSiGeNR with bare Si and Ge edges is a nonmagnetic metal.     

First-principles study of electronic structure and ferromagnetism in Ti-doped ZnO

We perform first-principles spin polarized calculations of the electronic structure of Ti-doped in ZnO. Ferromagnetism in Ti-doped ZnO is identified, which is in agreement with recent experimental and calculated results. A net magnetic moment of 0.715μ_B is found per Ti. At a Ti concentration of 12.5%, total energy calculations show that the ferromagnetic state is 68 meV lower than the antiferromagnetic state. The electronic states near Fermi energy are dominated by strong hybridization between O 2p and Ti 3d, which is just the origin of impurity band in Ti-doped ZnO and also implies that the Ti-O bond is quite covalent instead of purely ionic. Since there is no magnetic element in this compound, Ti-doped ZnO appears to be an unambiguous dilute magnetic semiconductor.     

Electronic and magnetic properties of copper-family-element atom adsorbed graphene nanoribbons with zigzag edges

We have investigated the electronic and magnetic properties of copper-family-element (CFE) atom adsorbed graphene nanoribbons (GNRs) with zigzag edges using first-principles calculations based on density functional theory. We found that CFE atoms energetically prefer to be adsorbed at the edges of nanoribbons. Charges are transferred between the CFE atom and carbon atoms at the edge, which reduce the local magnetic moment of carbon atoms in the vicinity of adsorption site and change the electronic structure of GNRs. As a result, Cu adsorbed zigzag GNR is a semiconductor with energy band gap of 0.88 eV in beta-spin and energy gap of 0.22 eV in alpha-spin, while Ag adsorbed zigzag GNR and Au adsorbed zigzag GNR are both half-metallic with the energy gaps of 0.68 eV and 0.63 eV in beta-spin, respectively. These results show that CFE atom adsorbed zigzag GNRs can be applied in nanoelectronics and spintronics.     

过渡金属掺杂的扶手椅型氮化硼纳米带的磁电子学特性及力-磁耦合效应

基于密度泛函理论的第一性原理计算方法,研究了多种过渡金属(TM)掺杂扶手椅型氮化硼纳米带(ABNNR-TM)的结构特点、磁电子特性及力-磁耦合效应.计算的结合能及分子动力学模拟表明ABNNRTM的几何结构是较稳定的,同时发现对于不同的TM掺杂,ABNNRs能表现出丰富的磁电子学特性,可以是双极化磁性半导体、一般磁性半导体、无磁半导体或无磁金属.双极化磁性半导体是一种重要的稀磁半导体材料,它在巨磁阻器件和自旋整流器件上有重要的应用.此外,力-磁偶合效应研究表明:ABNNR-TM的磁电子学特性对应力作用十分敏感,能实现无磁金属、无磁半导体、磁金属、磁半导体、双极化磁性半导体、半金属等之间的相变.特别是呈现的宽带隙半金属对于发展自旋电子器件有重要意义.这些结果表明:可以通过力学方法来调控ABNNR-TM的磁电子学特性.     

First-principles study on the influence of biaxial strain on the electronic and magnetic properties of defective blue phosphorene

Regulating the magnetic state of 2D materials is becoming increasingly important for the next generation of spintronic devices. In this study, the first-principles calculation method is used to study the synergistic modulating effect of biaxial strain and vacancy defects on the magnetic properties of blue phosphorene. Results show that only Single Vacancy (SV) doping magnetizes the intrinsic blue phosphorene, Double Vacancy-1 (DV-1), Double Vacancy-2 (DV-2) and Double Vacancy-3 (DV-3) doped blue phosphorene are magnetized under biaxial strain. The magnetic states of SV, DV-1, DV-2 and DV-3 systems change with the intensity of biaxial strain. In some cases, the magnetic moment of the system can be changed from 0 μB to 4 μB. The biaxial strain affects the partially bonding structure near the defects, changes the position of the dangling bond, and thereby adjusts the magnetic state. Our research provides positive guidance for the future application of blue phosphorene in the semiconductor field.     

Screening of Local Magnetic Moment by Electrons of Disordered Graphene

Based on the Anderson impurity model and self-consistent approach, we investigate the condition for the screening of a local magnetic moment by electrons in graphene and the influence of the moment on electronic properties of the system. The results of numerical calculations carried out on a finite sheet of graphene show that when the Fermi energy is above the single occupancy energy and below the double occupancy energy of the local impurity, a magnetic state is possible. A phase diagram in a parameter space spanned by the Coulomb energy U and the Fermi energy is obtained to distinguish the parameter regions for the magnetic and nonmagnetic states of the impurity. We find that the combined effect of the impurity and finite size effect results in a large charge density near the edges of the finite graphene sheet. The density of states exhibits a peak at the Dirac point which is caused by the appearance of the edge states localized at the zigzag edges of the sheet.     

Theoretical study of magnetic ordering and electronic properties of AgxAl1−x N compounds

Ferromagnetic ordering of silver impurities in the AlN semiconductor is predicted by plane-wave ultrasoft pseudopotential and spin-polarized calculations based on density functional theory (DFT). It was found that an Ag impurity atom led to a ferromagnetic ground state in Ag_0.0625Al_0.9375N, with a net magnetic moment of 1.95 μ_B per supercell. The nitrogen neighbors at the basal plane in the AgN₄ tetrahedron are found to be the main contributors to the magnetization. This magnetic behavior is different from the ones previously reported on transition metal (TM) based dilute magnetic semiconductor (DMS), where the magnetic moment of the TM atom impurity is higher than those of the anions bonded to it. The calculated electronic structure band reveals that the Ag-doped AlN is p-type ferromagnetic semiconductor with a spin-polarized impurity band in the AlN band gap. In addition, the calculated density of states reveals that the ferromagnetic ground state originates from the strong hybridization between 4d-Ag and 2p-N states. This study shows that 4d transition metals such as silver may also be considered as candidates for ferromagnetic dopants in semiconductors.     

First-principles study of the structural, electronic, and magnetic properties of InCCo3 and InNCo3

Spin-polarized calculations were performed to investigate the structural, elastic, electronic, and magnetic properties of InCCo₃ and InNCo₃. The deviation of our calculated lattice parameters and equilibrium volume from experimental results is less than 0.8% and 2.5%, respectively. The obtained values of elasticity moduli C_ij, bulk modulus B, and shear modulus G are discussed. From the calculated band structure and the total and partial densities of states, we have concluded that these compounds are electrical conductors; moreover, they are bonded by a mixture of covalent, ionic, and metallic bonds. Our calculations show that InCCo₃ has nonmagnetic properties, while InNCo₃ could have a magnetic behaviour, with an average magnetic moment about 0.54 μ_B/atom, which is mostly derived from d electrons of the cobalt atoms in the energy range from −5 eV up to the Fermi level.     

应变对两层半氢化氮化镓薄膜电磁学性质的调控机理研究

采用基于密度泛函理论的第一性原理模拟计算,研究了在应变作用下两层半氢化氮化镓纳米薄膜的电学和磁学性质.没有表面修饰的两层氮化镓纳米薄膜的原子结构为类石墨结构,并具有间接能隙.然而,当两层氮化镓纳米薄膜的一侧表面镓原子被氢化时,该纳米薄膜却依然保持纤锌矿结构,并且展示出铁磁性半导体特性.在应变作用下,两层半氢化氮化镓纳米薄膜的能隙可进行有效调控,并且它将会由半导体性质可转变为半金属性质或金属性质.这主要是由于应变对表面氮原子的键间交互影响和p-p轨道直接交互影响之间协调作用的结果.该研究成果为实现低维半导体纳米材料的多样化提供了有效的调控手段,为其应用于新型电子纳米器件和自旋电子器件提供重要的理论指导.     

Calculation of binding energy from moments via Jacobi polynomials

Moments contain essential information for the density of states, and they can be readily computed within the tight-binding framework; therefore, it is desirable to obtain the bond energy from the moments. A linear-scaling moment-based potential via orthogonal polynomials (LMPO) was proposed recently by (Qin, 2010) [29]. Arbitrary orthogonal polynomials can be implemented within the LMPO. This paper will concentrate on Jacobi polynomials, and these polynomials have finite support intervals. In order to match these support intervals with the band edges of the density of states, the band edges need to be obtained first, ideally from the moments. Algorithms obtaining the band edges from the moments are analysed, and a more convergent algorithm is proposed. Then the combination of this band edge algorithm and the LMPO is examined on an s-band system and a d-band tungsten system. As demonstrated from the results, even though the band edges are not fully converged within only a limited number of moments, this combined method is able to converge to the tight-binding results in terms of binding energy. Consequently, this can significantly reduce the computation time.     

锯齿型石墨烯纳米带的能带研究

运用π电子紧束缚模型,具体研究了锯齿型石墨烯纳米带(ZGNRs)的边界结构对能带,特别是费米面附近的导带和价带电子的影响.计算了七种不同边界结构的ZGNRs的能带色散关系及费米面附近价带电子在原胞中各原子上的分布情况.计算结果表明:两边界都无悬挂原子的NN-ZGNRs,只有一边界有悬挂原子的DN-ZGNRs,两边界都有五边形环的SPP-ZGNRs和ASPP-ZGNRs为金属性.两边界都有悬挂原子的DD-ZGNRs,一边界为五边形环另一边界无悬挂原子的PN-ZGNRs和一边界为五边形环另一边界有悬挂原子的P 关键词： 锯齿型石墨烯纳米带 紧束缚模型 电子密度分布 缺陷结构     

六角氮化硼纳米带的几何和电子结构理论研究

本文采用密度泛函B3LYP方法在6-31G*水平上,对一系列不同宽度的锯齿型和扶手椅型六角氮化硼纳米带进行了理论研究。结果表明纳米带宽度对体系的性质有规律性的影响。随着宽度的增加,纳米带不同位置的硼氮键键长差异逐步减小从而提高了整个体系的共轭性;锯齿型纳米带的能隙单调减小而扶手椅型纳米带的能隙在减小的同时出现振荡,且振幅随宽度逐渐减小。锯齿型氮化硼纳米带的化学势在特定宽度出现了极值点。前线分子轨道的分布随着宽度的增加出现了非均匀分布,呈现出向边界偏移的现象。     

六角氮化硼纳米带的几何和电子结构理论研究

本文采用密度泛函B3LYP方法在6-31G*水平上，对一系列不同宽度的锯齿型和扶手椅型六角氮化硼纳米带进行了理论研究。结果表明纳米带宽度对体系的性质有规律性的影响。随着宽度的增加，纳米带不同位置的硼氮键键长差异逐步减小从而提高了整个体系的共轭性；锯齿型纳米带的能隙单调减小而扶手椅型纳米带的能隙在减小的同时出现振荡，且振幅随宽度逐渐减小。锯齿型氮化硼纳米带的化学势在特定宽度出现了极值点。前线分子轨道的分布随着宽度的增加出现了非均匀分布，呈现出向边界偏移的现象。     

半氢化石墨烯与单层氮化硼复合体系的电子结构和磁性的调控

采用密度泛函理论第一性原理的PBE-D_2方法,对半氢化石墨烯与单层氮化硼(H-Gra@BN)复合体系的结构稳定性、电子性质和磁性进行了系统的研究.计算了六种可能的堆叠方式,结果表明:H-Gra@BN体系的AB-B构型是最稳定的,为铁磁性半导体,上、下自旋的带隙分别为3.097和1.798 e V;每个物理学原胞具有约1μB的磁矩,该磁矩主要来源于由未氢化的C_2原子的贡献;在z轴方向压应力的作用下,最稳的H-Gra@BN体系的电子性质由磁性半导体转变为半金属,再转变为非磁性金属;预测了一种能方便地通过应力调控电子性质和磁性质的新型材料,有望应用在纳米器件以及智能建筑材料等领域.     

Tunable magnetism through edge functionalization in zigzag green phosphorene nanoribbons

Ab initio density-functional theory calculations with spin polarization are performed to explore magnetic properties in zigzag green phosphorene nanoribbons (ZGPNRs) with no passivation or edge-saturated by H, OH and O chemical species. It is found that antiferromagnetic order at intra-edges is the most energetically favorable for the pristine and oxygen passivated ribbons, while H- or OH-saturated ZGPNRs show nonmagnetic order. It indicates that edge states arising from the unsaturated bonds are vital for the formation of the magnetic moment in the ZGPNRs. The magnitude of the edge magnetism in the pristine and O-saturated ZGPNRs is comparable to that in zigzag black phosphorene nanoribbons. Electronic band structures, spin densities and spd-orbital projected density of states for the studied pristine and O-passivated ZGPNRs are further analyzed to study their electronic properties. The magnetic and electronic properties discovered in the ZGPNRs may suggest potential applications in future spintronics and electronics.     

Half-metallic properties of Ti2FeSi full-Heusler compound

In this study, the electronic structure and magnetic properties of novel half-metallic Ti₂FeSi full-Heusler compound with CuHg₂Ti-type structure were examined by density functional theory (DFT) calculations. The electronic band structures and density of states of the Ti₂FeSi compound show the spin-up electrons are metallic, but the spin-down bands are semiconductor with a gap of 0.45 eV, and the spin-flip gap is of 0.43 eV. Fe atom shows only a small magnetic moment and its magnetic moment is antiparallel to that of Ti atoms, which is indicative of ferrimagnetism in Ti₂FeSi compound. The Ti₂FeSi Heusler compound has a magnetic moment of 2 μ_B at the equilibrium lattice constant a=5.997 Å.     

含单排线缺陷锯齿型石墨烯纳米带的电磁性质

基于密度泛函理论的第一性原理方法,研究了含单排线缺陷锯齿型石墨烯纳米带(ZGNR)的电磁性质,主要计算了该缺陷处于不同位置时的能带结构、透射谱、自旋极化电荷密度、总能以及布洛赫态.研究表明,含单排线缺陷的ZGNR和无缺陷的ZGNR在非磁性态和铁磁态下都为金属.虽然都为金属,但其呈金属性的成因有差异.在反铁磁态下,单排线缺陷越靠近ZGNR的边缘,对ZGNR电磁性质的影响越明显,缺陷由ZGNR对称轴线向边缘移动过程中,含单排线缺陷的ZGNR有一个半导体-半金属-金属的相变过程.虽然线缺陷靠近中线的ZGNR为半导体,但由于缺陷引入新的能带,导致含单排线缺陷的ZGNR的带隙小于无缺陷ZGNR的带隙.单排线缺陷紧邻边界时,含缺陷ZGNR最稳定;单排线缺陷位于次近邻边界位置时,含缺陷ZGNR最不稳定.在反铁磁态下,对单排线缺陷位于对称轴线的ZGNR施加适当的横向电场,可以实现半导体到半金属的转变.这些研究结果对于发展基于石墨烯的纳米电子器件有重要的意义.     

First principles calculations of armchair graphene nanoribbons interacting with Cu atoms

We have investigated the electronic properties of bare, H-terminated, Cu-terminated and Cu-doped armchair graphene nanoribbons (AGNRs) using ab-initio approach. We found that H-termination enhances the stability and band gap whereas H extraction introduces dangling bands and lowers the band gap making bare ribbons indirect band gap semiconductors. The calculations revealed that strong hybridization between Cu atoms and AGNRs, lessen the band gap for Cu-terminated ribbons and gives rise to metallicity in Cu-doped AGNRs irrespective of their widths. Formation energy of considered ribbons yield that H-terminated AGNRs with lowest formation energy are most energetically favored, next are one edge Cu-terminated ribbons followed by bare ones whereas both edges Cu-doped ribbons are least energetically plausible. We predict that presence of Cu atoms in GNRs, significantly alter the band gap and can be used in band gap engineering of nanoribbons.     

Structural and electronic properties of a single Si chain doped zigzag AlN nanoribbon

The first-principles projector-augmented wave (PAW) potentials within the density function theory (DFT) framework have been used to determine the geometry structures and electronic properties of the zigzag edge AlN nanoribbons (ZAlNNRs) doped with a single Si chain under generalized gradient approximation (GGA). The average Al–Si, Si–Si, Al–N, Si–N, Al–H and N–H bond lengths are 2.39, 2.16, 1.83, 1.74, 1.59 and 1.03 Å, respectively. Pure 7-ZAlNNR is an indirect semiconductor with a large band gap of 2.235 eV, while a semiconductor to metal transformation is taken place after a single Si chain substituting for a single Al–N chain at various positions. In pure 7-ZAlNNR, the HVB and LCB are mainly attributed to the edge N and Al atoms, respectively, while in a single Si chain substituting doped 7-ZAlNNR, the HVB and LCB are mainly attributed to the Si atoms. The Al–N, Al–H and Al–Si bonds are ionic bond, the Si–Si and Si–H bonds are covalent bond, the N–H and N–Si bonds are covalent bond modified ionic bond.