Raman scattering and hot luminescence spectra of Zn1 − x Mn x Te quantum wires

The Raman scattering and luminescence spectra of Zn_{1 − x} Mn _x Te (0 ≤ x ≤ 0.6) quantum wires have been investigated. The quantum wires have been grown by molecular-beam epitaxy on the (100)GaAs substrate with Au used as a catalyst. The spectrum of optical phonons in ZnMnTe quantum wires varies with a variation in x in accordance with an intermediate (between one- and two-mode) type of transformation. The optical phonon spectrum has been analyzed in terms of the microscopic theory. It has been demonstrated that the experimental data can be brought in accord with the theory by properly modifying the calculated density of phonon states for ZnTe. The spatial confinement has been found to affect the electronic states in Zn_{1 − x} Mn _x Te quantum wires.     

Influence of the thickness of CdTe and ZnTe layers on cathodoluminescence spectra of strained CdTe/ZnTe superlattices with quantum-dot layers

The influence of the thickness of ZnTe barrier layers on the cathodoluminescence spectra of strained CdTe/ZnTe superlattices containing layers of quantum dots with an average lateral size of approximately 3 nm has been investigated. In samples with thick barrier layers (30, 15 nm), the cathodoluminescence spectra of quantum dots exhibit one band with a maximum at E = 2.03 eV. It has been revealed that, at a barrier layer thickness of ∼3 nm, the luminescence band is split. However, at a ZnTe layer thickness of 1.5 nm, the luminescence spectrum also contains one band. The experimental results have been interpreted with allowance made for the influence of elastic biaxial strains on the energy states of light and heavy holes in the CdTe and ZnTe layers. For the CdTe/ZnTe heterostructure with quantum dots in which the thickness of the deposited CdTe layer is 1.5 monolayers and the thickness of the barrier layer is 100 monolayers, the cathodoluminescence spectrum contains 2LO-phonon replicas. This effect has been explained by the resonance between two-phonon LO states and the difference between the energy states in the electronic spectrum of wetting layer fragments.     

IR transmission and reflection spectra of structures with ZnTe and ZnTe/ZnMgTe quantum wires

The IR transmission and reflection spectra of ensembles of one-layer (ZnTe) and two-layer (ZnTe/ZnMgTe) quantum wires have been measured in s- and p-polarized light. The optical parameters of the structures and the material/vacuum volume ratio have been found by dispersion analysis. The frequencies of IR-active modes have been calculated using a quasi-electrostatic approximation and models of prolate ellipsoid and two-layer cylinders. The spectra of ensembles of ZnTe nanowires differ little from the spectrum of bulk ZnTe, exception for some softening of the LO-like mode. The spectra of two-layer ZnTe/ZnMgTe nanowires contain interface modes along with the TO-like mode. The calculated and measured data agree well.     

Manifestation of the composition inhomogeneity of Zn1 − x Mg x Te quantum wires in Raman spectra

The resonant Raman spectra of Zn_{1 − x} Mg _x Te quantum wires have been investigated. The dependences of the frequencies of longitudinal optical phonons of the ZnTe-like and MgTe-like modes (LO1 and LO2) on the photon energy have been found. The character of these dependences correlates with the variation in the frequencies of optical phonons of the Zn_{1 − x} Mg _x Te alloys on the composition (x). This gives grounds to assume that the quantum wires are inhomogeneous in the composition. This assumption is also confirmed by the fact that the intensity ratio of the LO2 and LO1 modes in the Raman spectra increases with increasing excitation energy.     

Dependence of the activation energies on the well width in CdTe/ZnTe strained single quantum wells

Photoluminescence (PL) measurements on the CdTe/ZnTe strained single quantum wells grown by using the molecular beam epitaxy technique showed that the sharp excitonic peaks corresponding to the transition from the first electronic subband to the first heavy-hole (E₁–HH₁) were shifted to lower energy with increasing well width. The (E₁–HH₁) interband transitions were calculated by using an envelope function approximation taking into account the strain effects, and the values were in reasonable agreement with those obtained from the (E₁–HH₁) excitonic transitions of the PL spectra. The activation energies of the confined electrons in the CdTe quantum well were obtained from the temperature-dependent PL spectra, and their values increased with increasing CdTe well width due to the quantum confinement effect. The present results can help to improve the understanding of the activation energies dependent on the CdTe well width in CdTe/ZnTe single quantum wells.     

Photoluminescence and exciton resonances over the scattered light in multiphonon spectra of resonant scattering in the CdTe/ZnTe superlattices with narrow quantum wells

Photoluminescence and Raman scattering spectra in CdTe/ZnTe heterostructures and superlattices with narrow quantum wells (4.8–9.2 Å) in a temperature range of 5–300 K have been measured. The temperature dependences of the intensity of exciton luminescence in isolated quantum wells have been studied, and the thermal activation energies associated with the effective barriers for electrons and holes have been determined. In CdTe/ZnTe heterostructures, the binding energies of an exciton with a heavy hole have been determined as functions of the quantum well width. The multiphonon Raman spectra that exhibit distinctive features, such as the weak intensity of nLO phonon lines of ZnTe (n < 8), the absence of their dependence on the number n (n > 2), and the multiple participation in scattering of acoustic LA phonons with large wave vector, have been investigated. The results have been explained based on the concept of the relaxation of hot excitons over the exciton band.     

Thermal quenching of luminescence in erbium doped semiconductors

The nature of the temperature dependence of luminescence intensity from Er⁺ ions in GaInAsP, Si, InP, GaAs, AlGaAs, ZnTe, as observed by Favennecet al [1] has been examined in terms of a double exponential model. The smaller activation energy is found to be 58–100 meV, characteristic of a localized energy barrier at the Er⁺ centre while the higher activation energy is approximately 0.8E _g attributed to an Auger non-radiative process of carrier excitation into bands. This model has been found to describe the observed temperature dependences with reasonably good agreement.     

Frequency Spectra of Quantum Beats in Nuclear Forward Scattering of 57Fe: The Mössbauer Spectroscopy with Superior Energy Resolution

Frequency spectra of quantum beats (QB) in nuclear forward scattering (NFS) are analysed and compared to Mössbauer spectra. Lineshape, number of lines, sensitivity to minor sites, and other specific properties of the frequency spectra are discussed. The most characteristic case of combined magnetic and quadrupole interactions is considered in detail for ⁵⁷Fe. Pure magnetic Zeeman splitting corresponds to a eight-line spectrum of QB, six of which show the same energy separation as the six lines in Mössbauer spectra. Two other lines (called 2′ and 3′) are the lower-energy satellites of the lines 2 and 3. As the quadrupole interaction E _Q appears, the satellites remain unsplit in the quantum beat frequency spectra, as well as the first (zero-frequency) and the 6th (largest frequency) lines. Each of the lines 3 and 5 generates a doublet split by 2E _Q, and the lines 2 and 4 generate triplets. In QB frequency spectra (QBFS) of thin absorbers of GdFeO₃ we demonstrate the enhanced spectral resolution compared to Mössbauer spectra. Small particle size in an antiferromagnet (Fe₂O₃) was found to affect the QBFS via enhancement of the intensity around zero-frequencies. An asymmetric hyperfine field distribution mixes up into the hybridization with dynamical beats, which enlarges the frequencies of the low-lying QBFS lines and makes their shifts relatively large compared to the shift of the highest-frequency line.     

Investigation of free and bound excitons in strained ZnTe films grown by MBE on GaAs(100) substrates

A study is reported of the reflectance and low-temperature photoluminescence (PL) spectra of ZnTe films grown by molecular-beam epitaxy (MBE) on GaAs substrates [(100) orientation, 3° deflection toward 〈110〉]. It is shown that the strain-induced splitting of the free-exciton energy level (ΔE _ex) does not depend on ZnTe film thickness within the 1–5.7 μm range and is due to biaxial in-plane film tension. The stresses are primarily determined by the difference between the thermal expansion coefficients of the film and the substrate. It is also shown that the residual stresses originating from incomplete relaxation of the film lattice parameter to its equilibrium value at the growth temperature likewise provide a certain contribution. The position of the spectral line of an exciton bound to a neutral acceptor (As) is well approximated in terms of the present models, taking into account the stresses calculated using the value of ΔE _ex.     

A complete and self-consistent evaluation of XPS spectra of TiN

The electron configuration in single crystalline (sc-)titanium nitride (TiN) has been quantitatively studied using angle resolved X-ray photoelectron spectroscopy (AR-XPS). All samples were fabricated and transferred in situ so that only minimal surface contaminations were observed. The residual oxygen contamination was separated from the bulk information by extrapolating angle resolved measurements. Special attention is given to the quantitative evaluation of the spectra based on basic principles. Shake-up features are observed on core level lines and appear due two final ionized states. The ratio of this shake-up and the main Ti 2p energy line are investigated in this paper. In order to quantify this shake-up a precise evaluation is required. Here we present an approach to evaluate the XPS spectra of the Ti 2p photoemission line in TiN in a self-consistent manner that accounts for all features observable in an energy window of 80 eV. The evaluation considers the appropriate Tougaard background correction, shake-up features as well as surface and bulk plasmons. The ratio of the Ti 2p_1/2 and Ti 2p_3/2 and the corresponding peaks in the energy loss features fulfill the requirements given by quantum mechanics. The energy loss ΔE due to the shake-up process and the shake-up ratio have been determined quantitatively for oxygen-free bulk titanium nitride. The origin of the shake-up, its intensity and energy difference ΔE are explained by a two electron excitation process.     

Dependence of the interband transition and the activation energy on the ZnTe spacer thickness in CdTe/ZnTe double quantum dots

Photoluminescence (PL) measurements were carried out to investigate the interband transition and the activation energy in CdTe/ZnTe double quantum dots (QDs). While the excitonic peaks corresponding to the interband transition from the ground electronic subband to the ground heavy-hole (E₁-HH₁) in the CdTe/ZnTe double QDs shifted to higher energy with decreasing ZnTe spacer thickness from 30 to 10 nm due to transformation from CdTe QDs to Cd_xZn_1−xTe QDs, the peaks of the (E₁-HH₁) transitions shifted to lower energy with decreasing spacer thickness from 10 to 3 nm due to the tunneling effects of the electrons between CdTe double QDs. The decrease in the activation energy with decreasing ZnTe spacer thickness might originate from an increase in the number of defects in the ZnTe spacer. The present results can help improve the understanding of the interband transition and the activation energy in CdTe/ZnTe double QDs.     

Influence of spin-orbit coupling on vibronic spectra of metalocomplexes porphin: Manifestation of out-of-plane vibrations

In fine-structure phosphorescence spectra of metallocomplexes of porphin with ions of the Pd(II) and Pt(II) and their meso-deuterated derivatives additional lines have been detected which have no analogs in fluorescence and resonance Raman spectra of metalloporphyrins and in phosphorescence spectra of metallocomplexes of porphin with light ions of the Mg(II) and Zn(II). For Zn-porphin, quantum-chemical calculations of frequencies and forms of in-plane and out-of-plane vibrations have been performed. Based on experimental data and calculation results it has been found, that in vibronic phosphorescence spectra of metallocomplexes of porphin, out-of-plane gerade modes of the E _g symmetry (D _4h symmetry group) are manifested. The activity of out-of-plane vibrations increases with enhancing spin-orbital coupling upon changing to heavier chelated metal ions. Vibronic transitions with participation of out-of-plane gerade E _g vibrations manifest in the T ₁ → S ₀ transition through the vibronic intensity borrowing from the triplet-triplet ³ E _u -³ E _g transition.     

A nanometric electron multiplexer

A simple nanostructure resonantly coupling two semiconductor quantum wires is proposed as an electron multiplexer, which selectively transfers electrons of a given energy E₀ from one wire to the other, while letting all the neighbouring states within a certain energy range around E₀ propagate virtually unaffected along the input wire. Closed-form expressions are derived for characteristic wire lengths within the coupling structure facilitating such a directional transfer, which enables one to determine optimal parameters for the device fabrication.     

Energy and angular distributions of backscattered electrons from collisions of 5 keV electrons with thick Al,Ti, Ag,W and Pt targets

The energy and angular distributions of backscattered electrons produced under the impact of 5 keV electrons with thick Al, Ti, Ag, W and Pt targets are measured. The energy range of backscattered electrons is considered between E _B = 50 eV and 5000 eV. The angle of incidence α and take-off angle θ are chosen to have values α = 0 and 10 and θ = 100, 110 and 120 respectively. The measured energy spectra are compared with the available theoretical models for α = 0 and 10. The elastic peak intensity of backscattered electrons is found to be a function of angle of incidence, take-off angle and atomic number of the target material. The considered theories are reasonably in good agreement with experiment for the energy spectra of the backscattered electrons having their reduced energies ∈ (= E _B/E ₀) in the range of 0.20 to 1.00.      

A simple analysis of the subband energies in quantum-confined non-parabolic semiconductors in the presence of a parallel magnetic field

Summary We study the subband energies in quantum wells and quantum wires in the presence of a parallel magnetic field in non-parabolic semiconductors, on the basis of a generalized dispersion relation considering all types of anisotropies of the energy-band parameters within the framework ofk·p formalism, by formulating the respective electron energy spectra. It is found, by takingn-Cd₃As₂ as an example, that the subband energies are greater for quantum wires and smaller for quantum wells, respectively. The magnetic field diminishes the above values and the corresponding well-known results for quantum-confined parabolic semiconductors have also been obtained from our generalized expressions under certain limiting conditions.     

Effects of the emission charge saturation in photocathodes under nonuniform illumination

Photoemission from a semiconductor having a negative electron affinity under nonuniform illumination is investigated theoretically for stationary and pulsed excitation regimes. The maximum emission current is shown to grow exponentially with increasing ratio of the negative electron affinity Δ₀ to a characteristic tunneling energy E ₀, and the excitation intensity I _opt corresponding to the maximum current has been determined. Excitation nonuniformity results in a weakening of the dependence of the emission current on illumination intensity near the current maximum. The quantum efficiency recovery time measured in a two-pulse excitation mode depends weakly on the illumination intensity and on its nonuniformity over the illuminated spot and is close to the relaxation time of low photovoltages.     

The Spectra of Cosmic Pions and Nucleons at Low and High Geomagnetic Latitudes at the Top of the Atmosphere

The spectra of cosmic pions and nucleons at an atmospheric depth of 100 g cm^?2 have been derived from sea level muon spectra at low and high latitudes. The derived spectra of pions and nucleons at low and high latitudes follow the relations N(Eπ) dEπ = 0.23 E_π^?2.68dEπ and N(E_p) dE_p = 2.98 E dE_p per cm² sec str GeV in the energy range 15–1200 GeV. Below 15 GeV it is found that the exponent of the energy spectrum is very much dependent upon the incident energy and latitude of the location. The major difference between low and high latitude pion spectra can be explained in terms of geomagnetic effects.     

Temperature properties of exciton luminescence from CdTe quantum wells with different thicknesses in the CdTe/CdMnTe structure

The optical spectra of the CdTe/Cd_0.7Mn_0.3Te structure containing three CdTe quantum wells with nominal thicknesses of 16, 8, and 4 monolayers have been investigated. The temperature dependences of parameters of the exciton luminescence spectra (integrated intensity, full-width at half-maximum, position of the maximum, Stokes shift) for quantum wells with different thicknesses differ substantially. These differences are explained by a strong thickness dependence of the energy of Coulomb coupling in the exciton, the energy of localization of the exciton on bulges of the quantum well, and the degree of penetration of the exciton wave function into the barrier. At high excitation power densities, the emission contours of the quantum wells with thicknesses of 8 and 16 monolayers contain short-wavelength tails that correspond to optical transitions between excited quantum-well levels.     

Specific features in the temperature dependence of photoluminescence from CdTe/ZnTe size-quantized islands and ultrathin quantum wells

A study has been carried out of the temperature dependences of luminescence spectra on a large number of CdTe/ZnTe structures differing in average thickness, 〈L _z〉=0.25–4 monolayers (ML), and CdTe layer geometry (continuous, island type). The influence of geometric features in the structure of ultrathin layers on linewidth, the extent of lateral localization of excitons, their binding energy, and exciton-phonon coupling is discussed. It is shown that in island structures there is practically no lateral exciton migration. The exciton-phonon coupling constant in a submonolayer structure has been determined, Γ_ph=53 meV, and it is shown that in structures with larger average thicknesses Γ_ph is considerably smaller. Substantial lateral exciton migration was observed to occur in a quantum well with 〈L _z〉=4 ML, and interaction with acoustic phonons was found to play a noticeable part in transport processes. It has been established that the depth of the exciton level in a quantum well and structural features of an ultrathin layer significantly affect the temperature dependences of integrated photoluminescence intensity. Fiz. Tverd. Tela (St. Petersburg) 41, 717–724 (April 1999)     

强激光照射下,α-LiIO3晶体中晶格振动的多模激发和模之间的相互作用

本文叙述了用调Q倍频YAG脉冲激光照射α-LiIO₃晶体,在不同的散射配置下,获得了各种散射谱图。实验表明,当用e光入射时,可以比用o光入射激发起更多不同模的晶格振动;获得了E₂模的很强的一阶、二阶斯托克斯散射线和反斯托克斯散射线,E₁模Polariton的一阶、二阶、三阶斯托克斯线和反斯托克斯线,还获得了反斯托克斯频率区一条频移为469cm^-1的新线,认为是不同模的Polariton之间的相互作用引起的。最后,提到实验中初步观察到的晶体拉曼活性的“疲劳现象”。 关键词：