Spectroscopic properties of Ce doped silica annealed at different temperatures

Ce³⁺-doped silica was synthesized by sol-gel technique. The absorption band at 252 nm of Ce³⁺-doped silica is close to the main absorption band of Ce(NO₃)₃ solution. Three different luminescence bands were observed in the samples annealed at temperatures from 100 to 1200 °C, and the intensity of these luminescence bands changed with the alteration of the heat-treating temperatures. In addition to two well-known main luminescence bands of 4f-5d transition of Ce³⁺ with the wavelength at 357 and 450 nm, a rarely reported luminescent band with the wavelength at 344 nm was also observed, which was attributed to some kind of oxygen-related defects of silica.     

Photoluminescent behavior of heat-treated porous alumina films formed in malonic acid

In the present work IR spectroscopy, electron probe microanalysis (EPMA) and photoluminescence (PL) spectral measurements were applied to study the effect of treatment temperature (T) on compositional and luminescent properties of malonic acid alumina films. Our studies have shown that the heat treatment of anodic alumina films at investigated temperatures from 100 up to 700 °C changes their photoluminescence spectra considerably. An increase in T results in the PL intensity growth. When reaching its maximum at 600 °C the luminescence intensity then decreases drastically with further T growth. The films heat-treated at 500 and 600 °C demonstrate asymmetrical PL band with Gaussian peaks at 437 and 502 nm. We proved that the malonic acid species incorporated into the alumina bulk during the film formation are responsible for photoluminescence band with its peak at 437 nm.     

Preparation and luminescent characteristic of Li3NbO4 nanophosphor

Synthesis and luminescence properties of Li₃NbO₄ oxides by the sol-gel process were investigated. The products were characterized by the X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy and absorption spectra. The PL spectra excited at 247 nm have a broad and strong blue emission band maximum at 376 nm, corresponding to the self-activated luminescence of the niobate octahedra group [NbO₆]⁷⁻. The optical absorption spectra of the samples sintered at temperatures of 600 and 700 °C exhibited the band-gap energies of 4.0 and 4.08 eV.     

Influence of deposition temperature on the structural and morphological properties of Be3N2 thin films grown by reactive laser ablation

Be₃N₂ thin films have been grown on Si(1 1 1) substrates using the pulsed laser deposition method at different substrate temperatures: room temperature (RT), 200 °C, 400 °C, 600 °C and 700 °C. Additionally, two samples were deposited at RT and were annealed after deposition in situ at 600 °C and 700 °C. In order to obtain the stoichiometry of the samples, they have been characterized in situ by X-ray photoelectron (XPS) and reflection electron energy loss spectroscopy (REELS). The influence of the substrate temperature on the morphological and structural properties of the films was investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The results show that all prepared films presented the Be₃N₂ stoichiometry. Formation of whiskers with diameters of 100-200 nm appears at the surface of the films prepared with a substrate temperature of 600 °C or 700 °C. However, the samples grown at RT and annealed at 600 °C or 700 °C do not show whiskers on the surface. The average root mean square (RMS) roughness and the average grain size of the samples grown with respect the substrate temperature is presented. The films grown with a substrate temperature between the room temperature to 400 °C, and the sample annealed in situ at 600 °C were amorphous; while the αBe₃N₂ phase was presented on the samples with a substrate temperature of 600 °C, 700 °C and that deposited with the substrate at RT and annealed in situ at 700 °C.     

Photoluminescence properties of heat-treated porous alumina films formed in oxalic acid

Photoluminescence and optical properties of as-anodized and heat-treated at 500 °C porous alumina films formed in a 0.3 M oxalic acid at 40 V have been studied. The FTIR indicates that the oxalate ions are embedded in the anodic alumina as chelating bidentate structures and further heating up to 500 °C does not cause any change in ion coordination. The results of time-resolved spectroscopy show the presence of two luminescence centers both in the as-anodized and heat-treated anodic alumina films with lifetimes of about 0.25 and 4.0 ns. The F⁺-centers in anodic alumina are responsible for the luminescence peak at about 420 nm, with a lifetime of about 4.0 ns. The luminescence peak at about 480 nm, with lifetime of about 0.25 ns, can be attributed to the luminescence of carboxylate ions existing in bulk of anodic alumina.     

Structure and luminescent properties of LaNbO4 synthesized by sol-gel process

The luminescence properties of LaNbO₄ synthesized by the citric gel process were investigated. The crystallized orthorhombic and monoclinic biphasic structure forms at temperatures below 1100 °C and well-crystallized monoclinic LaNbO₄ is obtained by heat treatment at a temperature of 1200 °C for 3 h. All of LaNbO₄ phosphors derived from the citric gel method exhibit red-shifted excitation spectra as the calcining temperature increased from 700 to 1200 °C. The effect of the heat treatment conditions on the peak shape and the peak positions of the photoluminescence (PL) emission are undetectable, and the PL spectra excited at 260 nm have a blue emission band maximum at 408 nm, corresponding to the self-activated luminescence center of LaNbO₄. The sample heat treated at 1100 °C for 3 h showed the highest absorption and fluorescence intensities among the prepared samples.     

Effects of post-thermal annealing temperature on the optical and structural properties of gold particles on silicon suboxide films

In this work, silicon suboxide (SiO_x) thin films were deposited using a RF magnetron sputtering system. A thin layer of gold (Au) with a thickness of about 10 nm was sputtered onto the surface of the deposited SiO_x films prior to the thermal annealing process at 400 °C, 600 °C, 800 °C and 1000 °C. The optical and structural properties of the samples were studied using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffractometry (XRD), Fourier transform infrared spectroscopy (FTIR) and optical transmission and reflection spectroscopy. SEM analyses demonstrated that the samples annealed at different temperatures produced different Au particle sizes and shapes. SiO_x nanowires were found in the sample annealed at 1000 °C. Au particles induce the crystallinity of SiO_x thin films in the post-thermal annealing process at different temperatures. These annealed samples produced silicon nanocrystallites with sizes of less than 4 nm, and the Au nanocrystallite sizes were in the range of 7-23 nm. With increased annealing temperature, the bond angle of the Si-O bond increased and the optical energy gap of the thin films decreased. The appearance of broad surface plasmon resonance absorption peaks in the region of 590-740 nm was observed due to the inclusion of Au particles in the samples. The results show that the position and intensity of the surface plasmon resonance peaks can be greatly influenced by the size, shape and distribution of Au particles.     

Luminescence property of Ce-doped silica decorated with S and Cl anions

Ce³⁺-doped silica was synthesized by sol-gel technique and was further decorated with S²⁻ and Cl⁻ anions through chemical exchange in controlled ambient at elevated temperature. The structure and optical property of samples were examined by X-ray diffraction spectrum, XPS pattern, reflection pattern, and photoluminescence patterns. There is a broad luminescence band at 445 nm under the excitation at 320 nm in the Ce³⁺-doped silica heat-treated in air at 1000 °C. The heat-treatment of the sample in vacuum at 800 °C can increase the intensity of luminescence but have no effect on the wavelength of luminescence. The decoration of S²⁻ and Cl⁻ anions cannot only increase the luminescent intensity but also shift the luminescent wavelength to shorter wavelength.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

rf reactive co-sputtered Au-Ag alloy nanoparticles in SiO2 thin films

We have studied formation of Au-Ag alloy nanoparticles in sputtered SiO₂ thin films. Silica thin films containing Au-Ag nanoparticles were deposited on quartz substrates using rf reactive magnetron co-sputtering technique. The films heat-treated in reducing Ar + H₂ atmosphere at different temperatures. They were analyzed by using UV-vis spectrophotometry, atomic force microscopy and X-ray photoelectron spectroscopy (XPS) methods for their optical, surface morphological as well as structural and chemical properties. The optical absorption of the Au-Ag alloy nanoparticles illustrated one plasmon resonance absorption peak located at 450 nm between the absorption bands of pure Au and Ag nanoparticles at 400 and 520 nm, respectively, for the thin films annealed at 800 °C. XPS results showed that the alloys were in metallic state, and they had a greater tendency to lose electrons as compared to their corresponding monometallic state. Using lateral force microscopy analysis, we have found that the alloy particles were uniformly distributed on the surface with grain size of about 20 nm.     

Porosity depth profiling of spin-coated silica thin films produced by different precursors sols

The structural evolution of nanoporous silica thin films was studied by Doppler broadening spectroscopy (DBS), 2-3 gamma ratio of positronium (3γ-PAS) and Fourier transform infrared spectroscopy (FT-IR). Four series of silica films with thickness in the 300-600 nm range were deposited by spin coating on Si substrate changing the content of sacrificial porogen in the sol precursors. The effect on the porosity of different amount of porogen and of the thermal treatments in the 400-900 °C temperature range have been highlighted. The evolution of the porosity is discussed considering the removal of porogen and of the silanol Si-OH groups by thermal treatments as pointed out by FT-IR. Pores with size from less than 1 nm up to sizes larger than 2.0 nm have been detected. In samples with maximum porogen load oPs escaping was observed indicating onset of connected porosity. At temperatures higher than 700 °C a decrease of the porosity due to a progressive pore collapsing was evidenced. A strong correlation was found between the shift of the Si-O-Si transversal optical (TO₃) mode in the FT-IR spectra and the pore size in the porous silica films as revealed by DBS and 3γ-PAS.     

Preparation and photoluminescent properties of Ni-doped ZrO2 fibers

Ni²⁺-doped ZrO₂ precursor fibers were prepared via sol-gel technique by dry-spinning method and then heat-treated at different temperatures. The surface of the fibers is smooth with uniform diameter and no cracks have been observed by scanning electron microscopy (SEM). The emission intensity reaches a maximum value at 1 mol% Ni²⁺ because of the concentration quenching. The photoluminescence (PL) relative intensity is apparently intensifying with increasing temperature before 700 °C due to the crystallinity of the ZrO₂ lattice improvement. The PL results show that the typical emission center is at 510 nm excited at 315 nm.     

Magnetic properties of MnO nanocrystals dispersed in a silica matrix

Magnetic nanocrystalline MnO particles have been synthesized in a silica glass matrix by the sol-gel method at calcination temperatures up to 1000 °C. EPR spectra of 0.1 mol% MnO doped silica gel and glasses studied in the temperature range 10-290 K show with the exception of those samples calcined at 900 and 1000 °C 6-line characteristic Mn(II) hyperfine (HF) lines. Additionally five spin-forbidden doublets have been observed at 100 K and below. Small spreads in spin Hamiltonian parameters (D and E) imply that the ligand field environments of Mn(II) ions embedded in the silica glass are nearly uniform. Monotonous decrease in HF linewidth in going from 120 °C gel to 800 °C calcined glass has been interpreted as the continuous decrease in population of isolated Mn²⁺ ions in silica glass matrix resulting in the decrease of magnetic dipolar interactions leading to the observed decrease in HF linewidth. XRD and TEM of sample calcined at 1000 °C shows the presence of nanocrystals of MnO having orthorhombic crystalline phase and sizes about 10 nm. The thermal behavior of magnetization (zero-field-cooled and field-cooled) and magnetic hysteresis of MnO nanocrystals in the 5-300 K temperature interval have demonstrated that the MnO nanocrystals display superparamagnetic-ferromagnetic transition at low temperatures. X-band EPR linewidth data plotted versus inverse of temperature (1/T) for samples calcined at 900 and 1000 °C (EPR recorded in the vicinity of 0.35 T applied field) depict similar transitions.     

Thermoluminescent and stuctural properties of BaAl2O4:Eu,Nd,Gdphosphors prepared by combustion method

BaAl₂O₄:Eu²⁺,Nd³⁺,Gd³⁺ phosphors were prepared by a combustion method at different initiating temperatures (400–1200 °C), using urea as a comburent. The powders were annealed at different temperatures in the range of 400–1100 °C for 3 h. X-ray diffraction data show that the crystallinity of the BaAl₂O₄ structure greatly improved with increasing annealing temperature. Blue-green photoluminescence, with persistent/long afterglow, was observed at 498 nm. This emission was attributed to the 4f⁶5d¹–4f⁷ transitions of Eu²⁺ ions. The phosphorescence decay curves were obtained by irradiating the samples with a 365 nm UV light. The glow curves of the as-prepared and the annealed samples were investigated in this study. The thermoluminescent (TL) glow peaks of the samples prepared at 600 °C and 1200 °C were both stable at ∼72 °C suggesting that the traps responsible for the bands were fixed at this position irrespective of annealing temperature. These bands are at a similar position, which suggests that the traps responsible for these bands are similar. The rate of decay of the sample annealed at 600 °C was faster than that of the sample prepared at 1200 °C.     

Optical characterization of SiO2/Zn2SiO4:V nanocomposite obtained after the incorporation of ZnO:V nanoparticles in silica host matrix

Vanadium-doped Zn₂SiO₄ particles embedded in silica host matrix were prepared by a simple solid-phase reaction under natural atmosphere at 1200 °C after the incorporation of ZnO:V nanoparticles in silica monolith using sol-gel method with supercritical drying of ethyl alcohol in two steps. The obtained sample, exhibits a strong PL band in the visible range at 540 nm and two thin emission lines in the UV range at 394 and 396 nm under intensive power excitation. Photoluminescence excitation (PLE) measurements show different origins of the emission bands. It is suggested that radiative defects attributed to vanadium in the interfaces between Zn₂SiO₄ particles and SiO₂ host matrix resulting from heat treatment and zinc oxide excitonic emissions, were responsible for theses luminescence bands.     

Hydrothermal preparation and photoluminescent properties of MgAl2O4: Eu spinel nanocrystals

Nanoplates of the MgAl₂O₄ spinel doped with Eu³⁺ ions were prepared by a microwave assisted hydrothermal method. Structural properties of the precursor calcined at 700 and 1000 ^oC powders were characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). According to the obtained XRD patterns the formation of single-phase spinels after calcination was confirmed. The average spinel particle size was determined to be 11 nm after calcination at 700 °C and it increased up to 14 nm after calcination at 1000 °C. The photoluminescent properties of prepared powders with different Eu³⁺ ion concentrations (0-5% mol) were investigated using excitation and emission spectroscopy at room and low temperatures (77 K).     

The influence of substrate temperature and annealing on the properties of pulsed laser-deposited YIG films on fused quartz substrate

Yttrium iron garnet (YIG) thin films were deposited on fused quartz substrate at different substrate temperatures (T_s) varying from room temperature (RT) to 850 °C using pulsed laser deposition (PLD) technique. All the films in the as-deposited state were X-ray amorphous and non-magnetic at RT. The film deposited at RT after annealing at temperatures T_a?700 °C showed both X-ray peaks and the magnetic order. The films deposited at higher T_s (500–850 °C) and then annealed at 700 °C resulted in better-quality films with higher 4πM_s value. The highest value of magnetization was for the sample deposited at 850 °C and annealed at 700 °C, which is 68% of the bulk 4πM_s value.     

Visible luminescence of Al2O3 nanoparticles embedded in silica glass host matrix

This paper deals with the sol-gel elaboration and defects photoluminescence (PL) examination of Al₂O₃ nanocrystallites (size ∼30 nm) confined in glass based on silica aerogel. Aluminium oxide aerogels were synthesized using esterification reaction for hydrolysis of the precursor and supercritical conditions of ethyl alcohol for drying. The obtained nanopowder was incorporated in SiO₂ host matrix. After heating under natural atmosphere at 1150 °C for 2 h, the composite Al₂O₃/SiO₂ (AS) exhibited a strong PL bands at 400-600 and 700-900 nm in 78-300 K temperature range. PL excitation (PLE) measurements show different origins of the emission. It was suggested that OH-related radiative centres and non-bridging oxygen hole centres (NBOHCs) were responsible for the bands at 400-600 and 700-900 nm, respectively.     

Effect of isochronal annealing on photoluminescence properties of Mn-implanted GaN

Mn ions were implanted into metal organic chemical vapour deposition (MOCVD)-grown GaN with dose ranging from 10¹⁴ to 5×10¹⁶ cm⁻². Isochronal annealing at 800 and 850 °C has been carried out after implantation of the samples. Photoluminescence measurements were carried out on the implanted samples before and after annealing. A peak found at 3.34 eV in the spectra of implanted samples after annealing at 850 °C is attributed to the stacking faults. Blue and green luminescence bands have been observed suppressed and an oxygen-related peak appeared at 3.44 eV in the PL spectra. The suppression of blue and green luminescence bands has been assigned to dissociation of V_GaO_N complex. Near-band-edge (NBE) peak exhibited a blue shift after 800 °C anneal and then red shift to restore its original energy position when annealed at 850 °C.     

The Influences of Structural Evolution of Silica Gel Glass on the Photophysical Properties of Benzoic Acid

Benzoic acid was dispersed into silica gel glass at molecular level by sol-gel process. The luminescence properties of benzoic acid in gel glass heat-treated at various temperatures were studied. The changes in gel glass structure and the surrounding environment of benzoic acid resulted in different electronic transitions, and thus the different luminescence spectra. The fluorescence bands centered at 320 nm and 355 nm, respectively induced by the S_1* S₀ transition of benzoic acid and S_1n* S₀ transition of benzoate anions, respectively, were observed when the doped gel glass was heat-treated at the temperatures below 200°C and at the temperature range 300 400°C, respectively. On heating at 500°C, benzoate anions were steadily immobilized in the cages of the Si–O network with the SiO₄ tetrahedra formation and the RTP of benzoate anions is observed. It is proposed that the luminescence spectra of benzoic acid can be used as a structural evolution probe of gel glass.