Vector magnetization of a Cr monolayer on an Fe(110) film

The non-collinear magnetic moment distribution at the Cr/Fe(110) interface of an Fe(110) thin film covered by a Cr monolayer is revealed by means of periodic Anderson model calculations. It is shown that the Cr surface has two magnetically non-equivalent sites with magnetic moments canted to each other. The Fe atoms in the subsurface monolayer also acquire two magnetically non-equivalent sites with magnetic moments canted to each other. Non-collinearity is shown to be a ground state for the Cr/Fe(110) multilayer.     

Spin polarization in photoelectron spectroscopy from antiferromagnets: Cr films on Fe(1 1 0) from first principles

The spin- and angle-resolved photoelectron spectroscopy from ultrathin Cr films on Fe(1 1 0) is investigated by means of first-principles electronic structure and photoemission calculations. The antiferromagnetic ordering in the Cr films leads in dependence on film thickness to a rapidly decreasing and oscillating photoelectron spin polarization, in reasonable agreement with recent experiments (Dedkov (2007) [1]). The oscillation period is explained by quantum-well states in the Cr film and by a Fermi surface nesting vector. The importance of transition matrix elements is highlighted. The findings point to a noncollinear magnetic structure at the Fe/Cr interface.     

Pulsed laser deposition of (110) oriented semiconductive SrFeO3−x thin films

 The semiconductive perovskite-type oxide SrFeO_3-x (x<0.16) (SFO) thin films have been directly fabricated on (001)SrTiO₃ and (001)LaAlO₃ single crystal substrates by pulsed laser deposition(PLD) under high oxygen partial pressure of 100 Pa. The SFO thin films were (110) oriented. The x-ray photoelectron spectroscopy (XPS) analysis showed that the surface of SFO thin film has strong gas absorption capability. The resistance versus temperature has been measured in the temperature range from 77 K to 300 K. The SFO thin film showed typical semiconductive property. Dependence of resistance of SFO thin film on oxygen pressure was measured and result showed that the SFO thin film had better oxygen sensitive property. Received: 14 May 1996/Accepted: 15 August 1996     

Optical and hydrophilic properties of Cr doped TiO2-SiO2 nanostructure thin film

Cr doped TiO₂-SiO₂ nanostructure thin film on glass substrates was prepared by a sol-gel dip coating process. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to characterize the structural and chemical properties of the films. A UV-vis spectrophotometer was used to measure the transmittance spectra of the thin film. The hydrophilicity of the thin film during irradiation and storage in a dark place was measured by a contact angle analyzer. The results indicated that Cr doping has a significant effect on the transmittance and super-hydrophilicity of TiO₂-SiO₂ thin film.     

Structural characterization of ultrathin Cr and Sc films for soft X-ray mirrors

The structure of multilayers of ultrathin scandium (Sc) and chromium (Cr) films has been characterized by means of transmission electron microscopy (TEM). Face centered cubic Sc was found both in magnetron sputtered thin Sc layers on Si(0 0 1) and in Cr/Sc multilayers for soft X-ray mirrors. The single Sc and Cr layers are polycrystalline with randomly oriented grains, while Sc and Cr within the Cr/Sc multilayer show a strong [0 0 1] texture in the deposition direction. From high-resolution images the orientation-relationship at the Cr/Sc interfaces could be deduced as: Sc_[110]//Cr_[100] and Sc_[010]//Cr_[110], which was confirmed by image simulations.     

Quantum-well states and resonances in thin single-crystal layers of noble metals on W(110) substrates

This paper reports on the first experimental observation of quantum-well states and sp-type resonances in thin single-crystal gold, silver, and copper layers formed on single-crystal W(110) surfaces, which result from spatial localization of Bloch-type electronic wave functions in a quantum well with potential barriers at the vacuum/metal and metal/W(110) interfaces. The quantization of the valence-band electronic structure in Au/W(110), Ag/W(110), and Cu/W(110) systems was studied experimentally using angle-resolved photoelectron spectroscopy.     

Suppression of incommensurate spin-density waves in thin epitaxial Cr(110) layers of a V/Cr multilayer

We observed a complete suppression of the incommensurate spin-density wave in thin Cr layers of a V/Cr multilayer in a temperature range from 550 K down to 2 K. The (110)-oriented V/Cr multilayer consisting of 30 nm thick Cr layers and 5 nm thick V layers was investigated by neutron and X-ray diffraction (XRD). From the XRD experiments we were able to determine that the epitaxial strain of the Cr layers in the V/Cr multilayer is about 90% larger than in earlier studied Fe/Cr(110) multilayers. That leads to a completely different magnetic phase diagram as revealed by neutron diffraction experiments. The existence of the commensurate antiferromagnetic structure in the Cr layers can be observed in the whole temperature range without a phase transition to an incommensurate spin-density wave at lower temperatures. In order to elucidate the proximity effects further we also performed experiments in an external magnetic field. Up to a field of 4 T we found no change in the magnetic structure of the Cr films whereas in earlier experiments on Fe/Cr(110) multilayers we could observe a strong perpendicular pinning of the Cr polarization to the Fe magnetization.Received: 28 August 2003, Published online: 8 December 2003PACS: 75.30.Fv spin-density waves - 75.70.-i magnetic properties of thin films, surfaces, and interfaces - 61.12.-q Neutron diffraction and scattering     

Splitting of the Cr 2p ions states in some ternary sulphides and selenides

X-ray photoelectron spectroscopy was used to investigate ACr₂S₄ (, Zn, Mn, Fe, Fe:Cu) and BCr₂Se₄ (, Cu, Hg, Hg:Cu) single crystals. Well defined splitting of the Cr 2p core level has been found. The local magnetic moments of the Cr ions are responsible for the observed effect. Received 2 November 1999     

The epitaxial growth of the chromium bcc (111) layers

Cr/Tb/Cr thin films have been obtained by pulsed laser deposition (PLD) on sapphire substrates. The crystal structure of the films was characterised in-situ by means of reflection high energy electron diffraction (RHEED) and Auger spectroscopy (AS) and ex-situ by X-ray grazing incidence diffraction (GID) and scanning tunnelling microscopy (STM). The deposition of chromium on the Tb(0001) layers at 300 °C was found to lead to the formation of three Cr(110) crystalline domains. Chromium deposited on Tb(0001) initially (first 50 Å) at room temperature and then at 300 °C grew epitaxially in the [111] direction and formed two Cr(111) crystalline domains shifted by 30°. Due to the lower density of the atoms in Cr(111) plane, compared to the Cr(110) and Cr(001) ones, this orientation is interesting for magnetic studies.     

Spin-resolved photoelectron spectroscopy of the MgO/Fe(110) system

The surface structure and electronic properties of ultrathin MgO layers grown on epitaxial Fe(110) films were investigated at room temperature by means of electron diffraction, Auger electron spectroscopy, scanning tunneling microscopy, and spin-resolved photoelectron spectroscopy. The spin polarization at the Fermi level (E_F) of the Fe(110) film decreases sharply with increasing thickness of the MgO layer. This behavior arises from the formation of a thin FeO layer at the MgO(111)/Fe(110) interface, as revealed by structural and spectroscopic investigations. The strong attenuation of the intrinsic spin polarization is qualitatively attributed to the scattering of spin-polarized electrons at the unoccupied d-orbitals of Fe²⁺. PACS 68.35.-p; 68.55.-a; 73.20.r; 75.70.Cn; 79.60.-I     

Characterization of Cr/6H-SiC(0 0 0 1) nano-contacts by current-sensing AFM

The electrical properties and interface chemistry of Cr/6H-SiC(0 0 0 1) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H₂ and in situ Ar⁺ ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured I-V characteristics and the modeling calculations enabled to estimate changes of the Schottky barrier height caused by Ar⁺ bombardment. Formation of ohmic nano-contacts on Ar⁺-bombarded surfaces was observed.     

Magnetic Behaviour of Sm2Co7/Fe/Sm2 Co7, Nanocomposite Trilayers with Cr and Ti Additions

Trilayered Sm2Co7/Fe/Sm2Co7 spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates. Very thin layers （0.3-0.7 nm） of Cr and Ti are added at the interfaces of the two magnetic phases. The thickness of StucCo7 is kept at 20nm and Fe at 6nm while the thickness of Cr and Ti are varied as 0.3, 0.5, and 0.7nm. The base pressure of sputtering chamber is kept below 10^-7 Torr and Ar pressure at 3-8m Torr. The samples are characterized by x-ray diffraction （XRD） and SQUID magnetometer. We report improvement in exchange coupling of nonacomposite magnets by addition of thin layers of Cr at interfaces.     

Correlation between electrical and optical properties of Cr:ZnO thin films grown by pulsed laser deposition

Highly transparent and conducting Chromium doped ZnO (Cr:ZnO) thin films with preferential c-axis orientation were grown on (0 0 0 1) sapphire substrates using buffer assisted pulsed laser deposition. The resistivity of Cr:ZnO thin films was found to decrease to a minimum value of ∼1.13×10⁻³Ω cm with the increasing Cr concentration up to ∼1.9 at.% and then increase with further increase of Cr concentration. On the contrary, the band gap and carrier concentration of Cr:ZnO thin films increased up to ∼3.37 eV and ∼2×10²⁰ cm⁻³, respectively, with the increase of Cr concentration up to ∼1.9 at.%, then decreased with further increase of Cr concentration. The increase of carrier concentration and conductivity with Cr doping at low Cr concentrations (<1.9 at.%) could be attributed to the presence of Cr in +3 valence state in ZnO thus acting as donor while decrease of carrier concentration beyond ∼1.9 at.% of Cr concentration could be attributed to the charge compensating effect due to the presence of acceptor like point defects such as oxygen interstitials. This was experimentally confirmed using x-ray photoelectron spectroscopy. The observed variation in the band gap of Cr:ZnO thin films with increasing Cr doping was attributed to the competing effects of the high free carrier concentration induced Burstein-Moss blue shift and band gap narrowing.     

On the growth of conversion chromate coatings on 2024-Al alloy

The initial growth of chromate conversion coatings on aluminium 2024-T3 alloy has been investigated by scanning Auger microscopy, scanning electron microscopy and X-ray photoelectron spectroscopy. The coating initiation is shown to be influenced by the alloy microstructure. In agreement with previously proposed growth models, Cr(VI) to Cr(III) reduction begins on the Al-Cu-Fe-Mn intermetallic second-phase particles, which act as cathodic sites, and then over the entire Al matrix surface. The less noble Al-Cu-Mg second-phase particles demonstrate dual behaviour during the initial stage of coating; some dealloy, with formation of a Cu-rich sponge-like structure, while others show no evidence for etching during the first few seconds and coating deposits on them similar to the situation for the Al-Cu-Fe-Mn particles. XPS measurements show more Cr(III) at the very initial stage of nucleation and growth, whereas the amount of Cr(VI) in the coating increases with the length of the chromating treatment. This is discussed in relation to Raman spectroscopy measurements made in a separate study.     

Investigation of a stainless-steel surface irradiated with protons in an iodine medium

The surface of 1Cr18Ni10Ti stainless steel irradiated by protons with an energy of 5.7 MeV in an iodine medium is studied by Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS). Iodine bonded with oxygen and molecular I₂ is observed in a thin 10-nm-thick steel surface layer. Iodine depth profiles are obtained using the RBS and XPS spectra. The possibility of the formation of chemical compounds containing iodine on the steel surface with allowance for the proton-irradiation effect on iodine adsorption is discussed.     

Alloy formation at the Ni–Al interface for nickel films deposited on Al(110) surfaces

Alloy formation at the Ni–Al interface for thin nickel films deposited on Al(110) surfaces has been studied using high-energy ion scattering/channeling (HEIS) and X-ray photoelectron spectroscopy (XPS). For nickel atoms deposited at room temperature on Al(110), a large amount of nickel–aluminum intermixing occurs at the interface. For the first two monolayers (ML) of deposited nickel, an NiAl-like compound is formed. The intermixing continues with a different rate, forming an Ni₃Al-like compound for nickel coverages from 2 to 8 ML, at which point a nickel metal film begins to grow on the surface. Nickel atoms deposited at 250°C on the Al(110) surface exhibit no surface compound formation, but diffuse up to 400 Å into the aluminum substrate. Interatomic potentials based on the embedded-atom method (EAM) are used in a Monte Carlo approach to simulate the evolution of the Ni–Al(110) interface as a function of the nickel coverage. The calculated ion-scattering yields and X-ray photoelectron intensities from nickel and aluminum atoms in these simulated interfaces are in good quantitative agreement with the experimental results. The simulations show a high-density Ni–Al alloy forming at the Al(110) surface which apparently inhibits outward diffusion of aluminum, leading to the more nickel-rich alloy and finally nickel film growth. The ion-scattering simulations show an unusually large amount of backscattering occurring below the Ni–Al(110) interface, apparently associated with defocusing of the incident ion beam.     

CEMS-study of the interface in Fe/Cr multilayer systems

The magnetic hyperfine (hf.) fields at the Fe/Cr interface were analyzed in epitaxial Fe/Cr thin film structures of (100)- and (110)-orientation with monolayer resolution by means of in-situ⁵⁷Fe Conversion Electron Mössbauer Spectroscopy (CEMS). The hf. field (300 K) in the 1st Fe-monolayer (ML) at the interface has been found to be strongly reduced to 22.0/20.9 T for (110)-/(100)-orientation, whereas the 2nd and 3rd ML reveal a slightly increased hf. field of 33.7 T as compared with the Fe-bulk value of 33.4 T. The temperature dependence of the hf. field at the interface shows aT ^3/2 spin wave law. The spin wave parameters are enlarged with respect to the bulk value indicating a reduced exchange interaction. A discontinuity in theT ^3/2-dependence is interpreted by the onset of magnetic order (Néel-temperature) of the Cr layers adjoining the⁵⁷Fe probe layer.     

Inhibition of initial surface oxidation by strongly bound hydroxyl species and Cr segregation: H2O and O2 adsorption on Fe-17Cr

The initial stages of surface oxidation of Fe-17Cr (ferritic stainless steel) were investigated at 323 K by X-ray photoelectron spectroscopy (XPS) and inelastic electron background analysis. The results indicated the formation of a mixed iron-chromium oxide layer upon O₂ exposure and the formation of a thin chromium oxyhydroxide layer upon H₂O exposure. The oxidation of Fe did not occur in the latter case. Moreover, it was found that pre-exposing the Fe-17Cr surface to H₂O significantly hinders subsequent oxidation by O₂, thus providing a way to control the formation of nanoscale oxides on stainless steel materials. It was concluded that the formation of strongly bound hydroxyl species together with adsorbate-induced segregation of Cr severely limits the reaction between O₂/H₂O and Fe from the alloy.     

Study of oxidation process of Cr/Cu/Cr thin film electrodes

Understanding the oxidation process of Cr/Cu/Cr laminated thin film electrode is important for developing new oxidation-resistant electrodes. By studying the evolution of crystal structure, morphology and electric resistivity of Cr/Cu/Cr thin films and electrodes that were post-annealed at different temperatures, the oxidation mechanism and process of Cr/Cu/Cr electrode were proposed. Copper is first oxidized into Cu₂O at low temperatures (<310 °C), and converts to CuO phase at higher temperatures. Two pathways for oxygen diffusion were identified: diffusion from the protective Cr layer, and diffusion from the sidewall of electrode, of which the latter one leads to total oxidation of copper interlayer at high temperatures (>310 °C). As a result, the passivation of Cu metal at electrode sidewalls is crucial in reducing oxidation of Cr/Cu/Cr electrodes or designing new copper-containing oxidation-resistant electrodes.     

Orientation dependence of the electrocaloric effect of ferroelectric bilayer thin films

An analytical thermodynamic theory is applied to investigate the electrocaloric effect of ferroelectric BaTiO₃/SrTiO₃ bilayer thin films with different orientations at room temperature. Theoretical analysis indicates that the strong electrostatic coupling between the layers results in the suppression of ferroelectricity at a critical relative thickness which occurs approximately at 50%, 23%, and 12% of SrTiO₃ fraction in the (001), (110), and (111) bilayer thin films, respectively. The ferroelectric bilayer thin films are respected to have the largest electrocaloric effect at this critical relative thickness. Moreover, the electrocaloric effect strongly depends on the orientation and the (110) oriented bilayer thin films have the largest electrocaloric effect. Consequently, control of the orientation and the relative thickness of SrTiO₃ layer can be used to adjust the electrocaloric effect of ferroelectric bilayer thin films, which may provide the potential for practical application in refrigeration devices.