Diode-pumped continuous-wave dual-wavelength Yb:CaNb2O6 lasers at 1003 nm and 1038 nm

A diode-pumped high-power continuous-wave (cw) dual-wavelength Yb:CaNb₂O₆ lasers at 1003 nm and 1038 nm is reported. By using an end-pumped structure and employing a 978 nm diode-laser as the pump source. As a result, the total output power of 803 mW dual-wavelength lasers at 1003 nm and 1038 nm is obtained at an incident pump power of 17.8 W. Furthermore, intracavity sum-frequency mixing at 1003 and 1038 nm was then realized in a LBO crystal to reach the green range. We obtained a total cw output power of 94 mW at 510 nm.     

Investigation of Nd:YVO4/YVO4 composite crystal and its laser performance pumped by a fiber coupled diode laser

Thermal effect control is critical to scale the output power of diode end-pumping solid lasers to several watts up and beyond. Diffusion bonding crystal has been demonstrated to be an effective method to relieve the thermal lens for the end-pumping laser crystal. The temperature distribution and thermal lens in Nd:YVO₄/YVO₄ composite crystal was numerically analyzed and compared with that of Nd:YVO4 crystal in this paper. The end-pumping Nd:YVO₄/YVO₄ composite crystal laser was set up and tested with z cavity. The maximum output power of 9.87 W at 1064 nm and 6.14 W at 532 nm were obtained at the pumping power of 16.5 W. The highest optical-optical conversion efficiencies were up to 60% at 1064 nm and 40% at 532 nm, respectively.     

Anisotropic properties of self-flux grown LiB3O5 single crystals

In this paper, we report the existence of anisotropic behavior along the crystallographic axes in optical, electrical and thermal properties of lithium tri borate, a recently developed vacuum UV-NLO material. The variation of refractive index with the wavelength along the crystallographic axes was investigated by prism coupling method. The results of impedance spectroscopy measurement reveal the presence of a strong anisotropy in ionic conductivity and dielectric constant along the axes and also show the super-ionic conduction behavior along the c-axis with the activation energy of Δ∼0.20 eV. A thermo-mechanical study in the temperature range of 300-900 K indicates the existence of a strong variation in the linear thermal expansion coefficient (positive value along the a-axis, and negative value along the c-axis) of LiB₃O₅ crystals.     

Thermal-lens measurement in a side-pumped 1.3 μm Nd:YVO4 bounce laser

We investigated thermal-lensing effects in a side-pumped 1.3 μm Nd:YVO₄ slab laser amplifier having a bounce geometry. The thermal-lens power during 1.3 μm laser action was 1.3-times larger than that without laser action. Excited-state absorption is the main cause for increased heat loading during laser operation. The heat-loading formula in end-pumped 1.3 μm vanadate lasers having low Nd doping can be extended to account for heat generation in diode-side-pumped vanadate bounce lasers having high Nd doping.     

Intra-cavity second harmonic generation with Nd:YVO4/BIBO laser at 542 nm

We report, for the first time, an efficient intra-cavity second-harmonic generation (SHG) at 1084 nm in a nonlinear optical crystal, BiB₃O₆(BIBO) at the direction of (θ, ?) = (170.1°, 90°), performed with a LD end-pumped cw Nd:YVO₄ laser. With 590 mW diode pump power, a continuous-wave (cw) SHG output power of 19 mW at 542 nm yellow-green color has been obtained using a 1.5 mm-thick BIBO crystal. The optical conversion efficiency was 3.22%. It was found that the output wavelength could be 532 nm, 537 nm or 542 nm according to regulating the angle of BIBO.     

Diode-pumped Nd:BaY2F8 picosecond laser

Picosecond pulse generation at 1050 nm by a diode-pumped Nd:BaY₂F₈ (Nd:BaYF) active crystal has been investigated under low-power pumping (440 mW absorbed). The sample was oriented along the optical axes and cut at Brewster angle for y-axis laser polarization to minimize birefringence effects. Stable passive mode-locking operation has been achieved by inverse saturable absorption with 80-mW output power and 3.7-ps pulses.     

Z-Scan studies of KYW, KYbW, KGW, and Ba(NO3)2 crystals

We present the studies of nonlinear refraction and nonlinear absorption in promising crystals which are extensively used in Raman lasers or as solid-state laser host materials: Ba(NO₃)₂, KGW, KYW, and KYbW. The single-beam z-scan technique with 1 ps laser pulses at 790 and 395 nm has been applied for the study. Nonlinear refraction-index intensity-coefficients and two-photon absorption coefficients have been determined for the crystals. The considerable enhancement of nonlinear refraction is observed in the crystals at 395 nm.     

Thermal effects investigation and cavity design in passively mode-locked Nd:YVO4 laser with a SESAM

A diode-pumped passively mode-locked Nd:YVO₄ laser with a five-mirror folded cavity is presented by using a semiconductor saturable absorber mirror (SESAM). The temperature distribution and thermal lensing in laser medium are numerically analyzed to design a special cavity which can keep the power density on SESAM under its damage threshold. Both the Q-switched and continuous-wave mode-locked operation are experimentally realized. The maximum average output power of 8.94 W with a 9.3 ps pulse width at a repetition rate of 111 MHz is obtained under a pump power of 24 W, correspondingly the optical slope efficiency is 39.2%.     

Thermal conductivity of La0.67(CaxSr1−x)0.33MnO3 (x=0, 0.5, 1) and La0.6Y0.07Ca0.33MnO3 pellets between 10 and 300 K

Thermal conductivity (λ) of nanocrystalline La_0.67(Ca_xSr_1−x)_0.33MnO₃ (x=0, 0.5, 1) and La_0.6Y_0.07Ca_0.33MnO₃ pellets prepared by a novel ‘pyrophoric’ method have been studied between the temperature range 10 and 300 K. Our data show that the magnitude of thermal conductivity is strongly influenced by the ion substitutions at La-site. The analysis of the thermal conductivity data indicates that the thermal transport is governed largely by phonons scattering in these systems and the electronic contribution is as small as 0.2-1% of total thermal conductivity (λ_total). At low temperatures (<90 K) 2D like lattice defects contribute to the phonon scattering dominantly and its strength increases with increasing Sr content and also with partial substitution of La by Y. Depending upon the composition of the samples, the magnon thermal conductivity contributes 2-15% of λ_total close to T_C. In the paramagnetic regime the unusual increase in λ_total keeps signature of large dynamic lattice distortion.     

Quasi-three-level Nd:YAG laser under diode pumping directly into the emitting level

We present theoretical and experimental investigations on ground-state direct pumping at 869 nm into the emitting level ⁴F_3/2 of end-pumped quasi-three-level Nd:YAG lasers operating at 946 nm. We have demonstrated, what we believe is for the first time, a Nd:YAG laser at 946 nm directly pumped by diodes and obtained 1.6 W of output power.     

Equation of state of aluminum carbide Al4C3

Quasi-hydrostatic compression of aluminum carbide, Al₄C₃ has been studied to 6 GPa at room temperature using energy-dispersive X-ray powder diffraction with synchrotron radiation. A fit of the experimental p-V data to the Birch equation of state yields the values of the bulk modulus, B₀, of 130(5) GPa and the first pressure derivative of the bulk modulus, B′₀, of 4.6(9). The compression is found to be anisotropic, with the a-axis being more compressible than the c-axis.     

Laser-induced voltage characteristics of Bi2Sr2Co2Oy thin films on LaAlO3 substrates

We report the laser-induced voltage (LIV) effects in c-axis oriented Bi₂Sr₂Co₂O_y thin films grown on (0 0 1) LaAlO₃ substrates with the title angle α of 0°, 3°, 5° and 10° by a simple chemical solution deposition method. A large open-circuit voltage with the sensitivity of 300 mV/mJ is observed for the film on 10° tilting LaAlO₃ under a 308 nm irradiation with the pulse duration of 25 ns. When the film surface is irradiated by a 355 nm pulsed laser of 25 ps duration, a fast response with the rise time of 700 ps and the full width at half maximum of 1.5 ns is achieved. In addition, the experimental results reveal that the amplitude of the voltage signal is approximately proportional to sin 2α and the signal polarity is reversed when the film is irradiated from the substrate side rather than the film side, which suggests the LIV effects in Bi₂Sr₂Co₂O_y thin films originate from the anisotropic Seebeck coefficient of this material.     

Continuous wave diode pumped Yb:LLF and Yb:NYF lasers

Experimental and theoretical results of investigation of CW Yb:LiLuF₄ (Yb:LLF) and Yb:Na₄Y₆F₂₂ (Yb:NYF) lasers under longitudinal diode laser pump are reported. Slope efficiencies of 41%, 58% with 0.21, 0.53 W of output powers were obtained for the Yb:LLF and Yb:NYF lasers, correspondingly. The Yb:NYF laser demonstrated tunability in the region from 1005 to 1061 nm. The mathematical modelling of CW laser operation predicts under optimized laser parameters optical to optical efficiencies of about 55% and 51% for Yb:LLF and Yb:NYF lasers, respectively.     

Electrical and thermal studies in the commensurate incommensurate phase region of (NH4)2ZnCl4 single crystal

DC electrical conductivity for a virgin and poled annealed (NH₄)₂ZnCl₄b-axis single crystal shows a defect controlled property. A Schottky mechanism is a probable mechanism of conduction in regions of strong structural transitions. The rise of conductivity in the incommensurate and paraelectric phases is linked to an increase in discommensurations density. The activation energies (ΔE) in the three phases region were calculated. DTA measurements shows that the crystal is stable up to 200 °C and the phase transition temperatures were observed at 42, 94.8 and 137 °C. The effective activation energy (E_e) was obtained using Kissinger and Mahadevan equations. It was found to be equal to 0.49 eV. This correlates with the value obtained through DC conductivity.     

Effects of uniaxial pressure and annealing on the resistivity of Ba(Fe1−xCox)2As2

Single crystals of underdoped Ba(Fe_1−xCo_x)₂As₂ were detwinned by applying uniaxial pressure. The anisotropic in-plane resistivity was measured using the Montgomery method without releasing pressure. The resistivity along the a-axis shows metallic behavior down to 5 K, while the resistivity along the b-axis shows an insulator-like behavior in some temperature range. Annealing the sample radically reduces the residual resistivity for x=0, and at the same time the anisotropy becomes much smaller at low temperatures.     

4.44 W of CW 515 nm green light generated by intracavity frequency doubling Yb:YAG thin disk laser with LBO

We demonstrate the generation of 515 nm green laser with diode-pumped Yb:YAG thin disk by intracavity frequency doubling of type-I phase-matched LiB₃O₅(LBO) in a V-type cavity at room temperature. A continuous-wave (CW) output power of 4.44 W at 515 nm was obtained. Optical-optical efficiency of 515 nm green laser is 14.6%. The fluctuation of green laser was 1.6% at the maximum output power in 0.5 h. Thermal lensing effects in Yb:YAG thin disk are investigated too.     

Passively Q-switched laser performance of c-cut Nd:Gd0.63Y0.37VO4 crystal

Passively Q-switched c-cut Nd:Gd_0.63Y_0.37VO₄ laser performance at 1.06 μm was demonstrated with Cr⁴⁺:YAG as saturable absorbers for the first time to our knowledge. This c-cut mixed crystal was found to have large energy storage capacity. The shortest pulse width, largest pulse energy, and highest peak power were obtained to be 6.6 ns, 201.7 μJ, and 30.6 kW, respectively.     

Laser-induced thermoelectric voltage in normal state MgB2 thin films

Laser-induced voltage has been observed in c-axis oriented MgB₂ thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB₂.     

Group delay dispersion measurement of Yb:YAl3(BO3)4 crystal with white-light interferometry

We report the group delay dispersion of Yb³⁺:YAl₃(BO₃)₄ (Yb:YAB) crystal measured by a white-light interferometer, and compare with that calculated from the Sellmeier formulae provided by the crystal supplier, over the wavelength range from 1000 nm to 1080 nm. The data should be useful for the dispersion compensation for femtosecond pulse generation in Yb:YAB lasers.     

Equation of state of silicon nitride carbodiimide Si2CN4

The lattice parameters of silicon nitride carbodiimide Si₂CN₄ have been measured up to 8 GPa at room temperature using energy-dispersive X-ray powder diffraction with synchrotron radiation. A fit of the experimental p-V data to the Birch-Murnaghan equation of state yields the values of the bulk modulus of 8.8(2) GPa and its first pressure derivative of 3.4(1). The compression is found to be anisotropic, with the b-axis being significantly more compressible than the a-and c-axes.