Exciton condensation in semiconductor quantum wells with a periodical modulation of potential

The appearance and properties of a structure in the density distribution of indirect excitons in coupled quantum wells in semiconductor alloys upon periodical field modulation are studied. Calculations showed that besides periodical dependence of density distribution, caused by the potential modulation, a stratification of the exciton density shafts into separate islands in the cross direction arises. Appearance of islands is the result of exciton condensed phase formation and a nonequilibrium state of the system due to the finite exciton lifetime and pumping presence. The dependence of the structure on system parameters (the pumping value, the modulated field depth and period) is investigated. Also the influence of the exciton–exciton annihilation is taken into account.     

Exciton band structure of crystalline anthracene

The density of states in the first exciton band of crystalline anthracene has been obtained at room, dry-ice-alcohol, and liquid nitrogen temperatures by applying a thermal modulation technique to observe the hot band-first exciton band optical transition (1-0 transition). The density of states function obtained has been interpreted in terms of the exciton band structure and the Davydov splitting. The K dependent selection rule for the 1-0 transition is discussed. The bandwidth of the first exciton band is 0.09 eV.     

Fine structure of indirect exciton in GaP

Wavelenght modulation spectra of the 1s indirect exciton in GaP are reported. Four lines are found which can be easily explained taking into account the “camel's back” structure of the conduction band. An exciton splitting of 0.9 meV^- ±0.2 has been measured.     

Modulation of the resonant Rayleigh light scattering spectrum of GaAs/AlGaAs structures with quantum wells under above-barrier illumination

It is found that additional illumination by photons with energies above the band gap width in barrier layers leads to a strong (up to 40% in depth at the values of the illumination power used in this work) modulation of the light intensity elastically scattered upon resonant excitation of exciton states in quantum wells of GaAs/AlGaAs structures. Evidently, the effect observed is associated with the redistribution of oscillator strengths of exciton transitions due to the formation of three-particle exciton complexes (trions). These complexes arise through preferred capture of nonequilibrium like charge carriers (in our case, holes).     

Chirping of an optical transition by an ultrafast acoustic soliton train in a semiconductor quantum well

Acoustic solitons formed during the propagation of a picosecond strain pulse in a GaAs crystal with a ZnSe/ZnMgSSe quantum well on top lead to exciton resonance energy shifts of up to 10 meV, and ultrafast frequency modulation, i.e., chirping, of the exciton transition. The effects are well described by a theoretical analysis based on the Korteweg-de Vries equation and accounting for the properties of the excitons in the quantum well.     

Exciton states in alkali halides

Recent experiments based on modulation spectroscopy have shown that it is possible to detect exciton levels in alkali halides up to n = 4. Therefore we worked out numerical calculations in order to predict the whole exciton series in KI and RbI. In our calculations the deep exciton levels are treated by considering the actual hole-electron interaction, whereas the effective mass approximation is used for the shallow exciton levels. The direct and exchange terms of the hole-electron interaction have been evaluated by performing three and four center integrals, the Wannier wave functions appearing in such integrals being approximated by suitable gaussian expansions of atomic orbitals.It is shown that by allowing the exciton state to extend up to 42 shells of neighbors it is possible to predict the exciton levels up to n = 2, the n = 3, 4 excitons being accounted for by the effective mass approximation. Similar computations performed for excitons in solid rare gases were found in excellent agreement with the experimental data and confirmed the reliability of our method.     

Exciton optoelectronic transistor

We demonstrate experimental proof of principle for an optoelectronic transistor based on the modulation of exciton flux via gate voltage. The exciton optoelectronic transistor (EXOT) implements electronic operation on photons by using excitons as intermediate media; the intensity of light emitted at the optical output is proportional to the intensity of light at the optical input and is controlled electronically by the gate. We demonstrate a contrast ratio of 30 between an on state and an off state of the EXOT and its operation at speeds greater than 1 GHz. Our studies also demonstrate high-speed control of both the flux and the potential energy of excitons on a time scale much shorter than the exciton lifetime.     

Fine structures of indirect exciton absorption in phosphorus-doped silicon

A new indirect exciton absorption structure has been observed in phosphorus-doped silicon crystals by using a wavelength modulation method. The structure is interpreted in terms of two-electron transitions involving a free exciton and the valley-orbit states of a phosphorus donor, in which the donor is left in the 1s (A₁) singlet state.     

Oscillations of the Degree of Circular Polarization in the Optical Spin Hall Effect

The optical spin Hall effect appears when elastically scattered exciton polaritons couple to an effective magnetic field inside of quantum wells in semiconductor microcavities. Theory predicts an oscillation of the pseudospin of the exciton polaritons in time. Here, we present a detailed analysis of momentum space dynamics of the exciton polariton pseudospin. Compared to what is predicted by theory, we find a higher modulation of the temporal oscillations of the pseudospin. We attribute the higher modulation to additional components of the effective magnetic field which have been neglected in the foundational theory of the optical spin Hall effect. Adjusting the model by adding non-linear polariton-polariton interactions, we find a good agreement in between the experimental results and simulations.     

Measurements of exciton absorption with pico-second light pulses produced by a self-phase modulation technique

Time-resolved absorption spectra of the A exciton in CdSe are measured by using pico-second white-light pulses produced by a self-phase modulation technique. The absorption peak of the n = 1 A exciton shifts to the high-energy side due to the high-density effect. The magnitude of the shift reaches a maximum at 20 psec after the pulse excitation, which is considered to indicate that the time constant for the formation of the n = 1 excitons by band-to-band excitation is about 20 psec.     

AC modulation of the recombination electroluminescence in anthracene single crystal

The recombination electroluminescence (REL) in an anthracene single crystal has been modulated by ac voltage at different dc biasing voltages. The frequency and ac voltage dependences observed are interpreted in terms of the presented model of sinusoidal current wave. The dc-voltage-induced changes in the modulation are explained by the voltage variation of the triplet exciton lifetime and wavelength of the current wave based on concomitant evolution of the triplet-to-singlet exciton concentration ratio responsible for the contribution of delayed and prompt components of the REL.     

Femtosecond vibrational dynamics of self-trapping in a quasi-one-dimensional system

We have directly time resolved the lattice motions associated with the formation of the self-trapped exciton in the quasi-one-dimensional system [Pt(en)(2)] [Pt(en)2Br2];(PF6)(4) ( en = ethylene-diamine, C2H8N2), using femtosecond impulsive excitation techniques. A strongly damped, low-frequency wave packet modulation at approximately 110 cm(-1) accompanies the formation of the self-trapped exciton on a approximately 200 fs time scale following excitation of the intervalence charge-transfer transition. Coherent oscillations at the ground state vibrational frequency and its harmonics are also detected.     

GaAs-InP异质材料的结构特性和光学特性研究

我们在低压金属有机汽相沉积(MOCVD)设备上采用两步升温法与金属有机源流量周期调制生长界面过渡层方法制备出GaAs-InP材料,并对此进行了X-射线衍射、低温光致发光谱(PL)和Raman谱分析,结果表明,GaAs外延层的位错密度低于用两步升温法得到的GaAs材料,PL谱峰较强,GaAs的特征激子峰和杂质相关的激子峰同时被测到。Raman谱PL谱的峰移表明GaAs外延层处于(100)双轴伸张应力下,应力大小随温度变化是由于GaAs、InP之间的热膨胀系数不同。     

Direct observation of split-off exciton and phonon structures in absorption spectrum of silicon

The split-off band exciton of silicon has been observed in the absorption spectrum by using a wavelength modulation technique. The spin-orbit splitting of the valence band is determined to be 44.1 ± 0.3 meV at 1.8 °K. The structures associated with some two-phonon indirect transitions have also been observed in the absorption spectrum.     

Optical and photocurrent spectroscopy with picosecond strain pulses

This paper gives an overview of optical experiments using picosecond strain pulses. The strain pulses, which propagate with the sound velocity, are incident on a semiconductor nanostructure and induce an ultrafast shift of the exciton resonance energy by an amount, that exceeds the spectral width of the corresponding optical transition. When the duration of the high-amplitude strain pulse is long enough compared with the coherence time of the optical resonance, modulation of the resonance takes place adiabatically and exciton energy can be accurately defined at each momentary position. If the coherence time exceeds the characteristic time of the strain pulse, a non-adiabatic regime is realized and the exciton cannot be related to an optical transition with a specific photon energy. In more detail, we describe the recent experiments on the gating of photocurrent in a tunneling p-i-n device and the generation of THz polariton sidebands in an optical microcavity strongly coupled to the excitons in an embedded quantum well. These two experiments represent, respectively, examples of adiabatic and non-adiabatic behaivior of excitons in the presence of the high-amplitude picosecond strain pulse.     

Modulation of the exciton density in a hybrid electron-exciton system

The induced modulation of the exciton density in a system consisting of spatially separated layers of a two-dimensional electron gas and indirect dipolar excitons is studied theoretically. In particular, it is shown that an external potential causes Friedel oscillations in the density of excitons due to their interaction with electrons. Possibilities for experimental observation of this effect are briefly discussed.     

Excitons in GaAs quantum wells

This paper attempts to summarize some of the salient properties of excitons in GaAs quantum wells and in doing so it will emphasize work at AT&T Bell Labs with which the authors have been associated. Although the text relies heavily on published material, an effort has been made to stress new material, and where feasible, unpublished aspects, e.g., figures, related to earlier work. Topics discussed on the quasi-2D excitons in GaAs quantum well include: their inherent tendency for intrinsic free-exciton emission, exciton binding energies, bound and localized excitons including biexcitons and excitons bound to neutral impurities, effects of n- and p-type modulation and antimodulation doping, and the developments leading to a proposed set of quantum well parameters that results in acceptable fits to the observed exciton transitions for GaAs quantum wells with both square and parabolic potential profiles.     

半导体超晶格和量子阱中量子态的光谱研究

本文讨论半导体超晶格及量子阱导带和价带的量子化亚带或子能级之间的带间光跃迁过程。所讨论的光跃迁过程或光谱研究方法有吸收光谱、光电流谱、光荧光和荧光激发谱、调制光谱以及喇曼散射光谱。关于亚带能量状态将着重讨论量子阱中的激子效应和价带亚带混和及其对带间光跃迁的影响。     

Modulated cyclotron resonance in multi-quantum well structure of In0.53Ga0.47As/InP induced by interband and exciton excitation

We report for the first time the modulated cyclotron resonance of electrons in the lattice-matched multi-quantum well structures of In_0.53Ga_0.47As/InP induced by monochromatic light beam of excitation. The resonant enhancement and modulation of the cyclotron resonance of electron due to interband and exciton excitation in the structures have been observed experimentally, which shows the possible prospect of the method for the observation of cyclotron resonances in semiconductors.October 26, 1993