Curvature-induced bound states and coherent electron transport on the surface of a truncated cone

We study the curvature-induced bound states and the coherent transport properties for a particle constrained to move on a truncated cone-like surface. With longitudinal hard wall boundary condition, the probability densities and spectra energy shifts are calculated, and are found to be obviously affected by the surface curvature. The bound-state energy levels and energy differences decrease as increasing the vertex angle or the ratio of axial length to bottom radius of the truncated cone. In a two-dimensional (2D) GaAs substrate with this geometric structure, an estimation of the ground-state energy shift of ballistic transport electrons induced by the geometric potential (GP) is addressed, which shows that the fraction of the ground-state energy shift resulting from the surface curvature is unnegligible under some region of geometric parameters. Furthermore, we model a truncated cone-like junction joining two cylinders with different radii, and investigate the effect of the GP on the transmission properties by numerically solving the open-boundary 2D Schrödinger equation with GP on the junction surface. It is shown that the oscillatory behavior of the transmission coefficient as a function of the injection energy is more pronounced when steeper GP wells appear at the two ends of the junction. Moreover, at specific injection energy, the transmission coefficient is oscillating with the ratio of the cylinder radii at incoming and outgoing sides.     

Epitaxial growth of Au and Pt on Fe3O4(1 1 1) surface

We have studied the epitaxial growth of Au and Pt layers on Fe₃O₄(1 1 1) as a function of the deposition temperature and thickness. The layers were deposited by UHV sputtering and the structural properties were investigated by reflection high energy electron diffraction (RHEED), X-ray experiments and transmission electron microscopy (TEM). The epitaxial growth of both metals was obtained whatever the deposition conditions but the wetting is however different for the two metals. Comparison between the coverage ratios of Au and Pt is correlated with their surface and interfaces energies. The optimum conditions to achieve a 2D flat epitaxial metallic layer are determined.     

Magnetoquantum de Haas-van Alphen oscillations in spin-split two-dimensional Fermi liquid

Theory of magnetoquantum oscillations with spin-split structure in strongly anisotropic (two-dimensional (2D)) metal is developed in the formalism of level approach. Parametric method for exact calculation of oscillations wave forms and amplitudes, developed earlier for spin degenerate levels is generalized on a 2D electron system with spin-split levels. General results are proved: 1) proportionality relation between magnetization and chemical potential oscillations accounting for spin-split energy levels and magnetic field unperturbed levels (states of reservoir), 2) basic equation for chemical potential oscillations invariant to various models of 2D and 1D energy bands (intersecting or overlapping) and localized states. Equilibrium transfer of carriers between overlapping 2D and 1D bands, characterizing the band structure of organic quasi 2D metals, is considered. Transfer parameter, calculated in this model to be of the order of unity, confirms the fact that the wave form of oscillations in organic metals should be quasisymmetric up to ultralow temperature. Presented theory accounts for spin-split magnetization oscillations at magnetic field directions tilted relative to the anisotropic axis of a metal. Theoretical results are compared with available experimental data on organic quasi-2D metal α-(BEDT-TTF)₂KHg(SNC)₄ explaining the appearance of clear split structure under the kink magnetic field and absence above by the corresponding change in the electron g-factor rather than cyclotron mass. Received 20 December 2000 and Received in final form 13 July 2001     

相干输运中的接点问题

为了研究介观体系的相干输运中接点的重要作用,采用一简单的纳米单势垒“二维-一维-二维”(2D-1D-2D)模型,应用散射矩阵方法和托马斯-费米近似,计算了体系透射率和在直流电压下电势分布. 结果表明： 1)接点对其透射率有显著的影响; 2)电势降落表现的电导性质违背了与经典串联电路中等价的基尔霍夫定律. 因此介观体系中各器件与接点间是量子相干的,考虑接点问题有利于对介观体系相干输运更为深入的研究. 关键词： 相干输运 接点 介观体系     

Flux-dependent anti-crossing of resonances in parallel non-coupled double quantum dots

We present novel resonant phenomena through parallel non-coupled double quantum dots (QDs) embedded in each arm of an Aharonov-Bohm (AB) ring with magnetic flux passing through its center. The electron transmission through this AB ring with each QD formed by two short-range potential barriers is calculated using a scattering matrix at each junction and a transfer matrix in each arm. We show that as the magnetic flux modulates, a distortion of the grid-like square transmission occurs and an anti-crossing of the resonances appears. Hence, the modulation of magnetic flux in this system can have an equivalent effect to the control of inter-dot coupling between the two QDs.     

Transport properties of graphene/metal planar junction

The transport properties of graphene/metal (Cu(111), Al(111), Ag(111), and Au(111)) planar junction are investigated using the first-principles nonequilibrium Green's function method. The planar junction induce second transmission minimum (TM2) below the Fermi level due to the existence of the Dirac point of clamped graphene. Interestingly, no matter the graphene is p- or n-type doped by the metal substrate, the TM2 always locates below the Fermi level. We find that the position of the TM2 is not only determined by the doping effect of metal lead on the graphene, but also influenced by the electrostatic potential of the metal substrate and the work function difference between the clamped and suspended graphene.     

Valley-dependent electron transport in ferromagnetic/normal/ferromagnetic silicene junction

The electron transport through ferromagnetic/normal/ferromagnetic silicene junction with an induced energy gap is investigated in this work. The energy gap can be tuned by applying electric field or exchange fields due to the buckled structure of silicene. We analyze the local electric field, exchange field, length of normal region-dependence transmission probabilities of four groups and valley conductance. These transmission probabilities and valley conductance can be turned on or off by adjusting the local electric field and exchange field. In particular, a fully valley polarized conductance with 80% transmission is found in this junction, which can be caused by the interplay of valley-dependent massive Dirac electron, the exchange potential and the on-site potential difference of sublattices. Our findings will benefit applications in silicene-based high performance nano-electronics.     

Electron Transport Properties of Two-Dimensional Si_1P_1 Molecular Junctions

We focus on two new 2D materials, i.e., monolayer and bilayer silicon phosphides(Si_1 P_1). Based on the elasticscattering Green's function, the electronic-transport properties of two-dimensional monolayer and bilayer AuSi_1 P_1-Au molecular junctions are studied. It is found that their bandgaps are narrow(0.16 eV for a monolayer molecular junction and 0.26 eV for a bilayer molecular junction). Moreover, the calculated current-voltage characteristics indicate that the monolayer molecular junction provides constant output current(20nA) over a wide voltage range, and the bilayer molecular junction provides higher current(42nA).     

Stability and dissociation of quadruple junctions in polycrystals

Junctions of four grain boundaries (quadruple junctions) may form during grain growth. An analysis of the stability/unstability of quadruple junctions in 2D polycrystals is presented based on simple thermodynamic arguments. Depending on the angles between the four grain boundaries, their junction may dissociate into two triple junctions or be stable. In the first case there are two possible dissociations, but in general one is favored. A stable quadruple junction moves as a whole to a new position before it dissociates. These alternatives in the behavior of a quadruple junction are conveniently displayed in maps which indicate the regions where each alternative occurs.     

钢结构装配式住宅墙板连接方式对隔声性能的影响*

为提升其隔声性能,通过有限元法数值分析,比较了不同位置墙板的连接方式对房间隔声性能的影响。结果表明：(1)侧墙墙板柔性连接处理对侧向传声的抑制作用显著,当侧墙墙板采用柔性连接后,房间的隔声量在低频段平均可以提升3 dB左右;(2)公共隔墙墙板的柔性连接对房间低频段隔声量提升不明显,甚至在160 Hz、400 Hz、500 Hz等频率下隔声量有所降低。最后,基于模拟分析结果对装配式墙体连接方式提出了改进策略。     

Light-propagation characteristics of Y-branch defect waveguides in AlGaAs-based air-bridge-type two-dimensional photonic crystal slabs

Y-branch defect waveguides (DWGs) in an AlGaAs-based air-bridge-type two-dimensional (2D) photonic crystal (PC) slab were fabricated, and the resulting optical transmission spectra were measured. Optical beam propagation along the waveguide was successfully observed in vidicon IR images. The measured transmission spectra at the two output ports in the Y-branch DWG were remarkably similar in shape and magnitude. From comparison between the measured and calculated transmission spectra, the observed optical beam was identified as the guided mode based on the Y-branch DWG in the 2D PC slab. The results suggest that the Y-branch DWG used in the experiment has the potential to function as an ultrasmall 3-dB beam splitter with good performance.     

ANALYSIS AND DESIGN OF MULTIPORT WAVEGUIDE JUNCTIONS WITH ARTIFICIAL INCLUSIONS FORMED OF CONDUCTING STRIPS

A rigorous electromagnetic theory is developed to analyze multiport waveguide junctions with artificial inclusions formed of the conducting strips and dielectric layers. The method is based on the Fourier transform technique combined with the mode matching method technique that takes into account the edge conditions in vicinity of the strip edges. The scattering characteristics of a 3-port junction are discussed with the numerical examples for the SWR maps, the power reflection and transmission coefficients, and the 2D plots of near fields distributions inside the junction area. A strategy of optimize matching properties of the 3-port waveguide junctions is also presented.     

Electron-vibration interaction in single-molecule junctions: from contact to tunneling regimes

Point contact spectroscopy on a H(2)O molecule bridging Pt electrodes reveals a clear crossover between enhancement and reduction of the conductance due to electron-vibration interaction. As single-channel models predict such a crossover at a transmission probability of tau=0.5, we used shot noise measurements to analyze the transmission and observed at least two channels across the junction where the dominant channel has a tau=0.51 +/- 0.01 transmission probability at the crossover conductance, which is consistent with the predictions for single-channel models.     

Effects of interface bound states on the shot noise in normal metal–low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential

We consider the effects of interface bound states on the electrical shot noise in tunnel junctions formed between normal metals and one-dimensional(1 D) or two-dimensional(2 D) Rashba semiconductors with proximity-induced s-wave pairing potential. We investigate how the shot noise properties vary as the interface bound state is evolved from a non-zero energy bound state to a zero-energy bound state. We show that in both 1 D and 2 D tunnel junctions, the ratio of the noise power to the charge current in the vicinity of zero bias voltage may be enhanced significantly due to the induction of the midgap interface bound state. But as the interface bound state evolves from a non-zero energy bound state to a zero-energy bound state, this ratio tends to vanish completely at zero bias voltage in 1 D tunnel junctions, while in 2 D tunnel junctions it decreases smoothly to the usual classical Schottky value for the normal state. Some other important aspects of the shot noise properties in such tunnel junctions are also clarified.     

Spin resonance transport properties of a single Au atom in S–Au–S junction and Au–Au–Au junction

The spin transport properties of S–Au–S junction and Au–Au–Au junction between Au nanowires are investigated with density functional theory and the non-equilibrium Green's function. We mainly focus on the spin resonance transport properties of the center Au atom. The breaking of chemical bonds between anchor atoms and center Au atom significantly influences their spin transmission characteristics. We find the 0.8 eV orbital energy shift between anchor S atoms and the center Au atom can well protect the spin state stored in the S–Au–S junction and efficiently extract its spin state to the current by spin resonance mechanism, while the spin interaction of itinerant electrons and the valence electron of the center Au atom in the Au–Au–Au junction can extract the current spin information into the center Au atom. Fermi energy drift and bias-dependent spin filtering properties of the Au–Au–Au junction may transform information between distance, bias,and electron spin. Those unique properties make them potential candidates for a logical nanocircuit.     

Standing waves and resonance transport mechanism in quantum networks

One-electron spin-dependent scattering problem is considered on the star-shaped 2-d quantum network consisting of a quantum well and few relatively thin leads attached to it. The resonance nature of transmission coefficients is revealed based on accurate analysis of interaction between the running spin-waves in the leads and the standing spin-waves in the quantum well. Modeling of the transport problem on the two-dimensional junction by the 1-d scattering problem on the corresponding quantum graph is discussed.     

Valley splitting and anomalous Klein tunneling in borophane-based n-p and n-p-n junctions

We analytically investigate the transport properties of electron in borophane-based n-p and n-p-n junctions. When the electron beam in n region go through the n-p junction, the beam will be split into two valley-dependent beam in p region. This comes from the valley-dependent refraction angle induced by the anisotropic band structure of borophane. Interestingly, the behavior of valley splitting can be generated in a borophane-based n-p junction naturally without any external modulation methods. Generally, the Klein tunneling is described as the perfect transmission at a zero incident angle of electron regardless of the width and height of potential barrier. However, in a borophane-based n-p-n junction, the anomalous Klein tunneling, i.e., the perfect transmission exists at a nonzero incident angle, is found due to the anisotropic band structure of borophane. Our work designs an alternative valley splitter and provides an insight into the understanding of the Klein tunneling.     

Dislocations in two-dimensional liquid foams

In this analysis we make the analogy between the dislocations in metals and the behaviour of 2D liquid foams in the presence of external forces. It is shown that the edge defect which appears in metals can also be introduced in a similar manner in 2D liquid foams and that the motion of this defect through the foam can occur by the process of T1 transformations. The analogy leads to the motion of local cells as opposed to the motion of a row of cells. That is, the T1 process occurs ‘locally’ and the ‘defect’, primarily introduced here as an edge dislocation, can move through the whole 2D liquid foam through the local motion of these edge dislocations. These defects as in the theory of metals lead to the reduction of the critical stress required for the ‘slipping’ of the 2D liquid foam. Furthermore, since it is these defects which are responsible for the behaviour of the 2D liquid foam to external forces and since it will be the motion of these defects which is related to the motion of the cells, it is possible, again through the analogy with ‘slipping’ in metals to determine the strain rate. The result is given as strain rate = ϱ b 〈V〉.     

Effect of transparency on Josephson junction between s+g-wave superconductors

In this paper, a dc Josephson junction between borocarbide superconductors has been studied theoretically. The s+g-wave pairing symmetry which is observed in rare earth complex of borocarbides has a huge anisotropy and is an interesting form of unconventional superconductivity. We calculate the Josephson current in a superconductor--insulator--superconductor (SIS) Josephson junction with s+g-wave superconducting pairing symmetry. In our planar junction c-axis is parallel to an interface with finite transparency but ab-planes of two tetragonal superconductors are misorientated by angle α. We obtain that the Josephson current is strongly dependent on mis-orientation between the left and the right ab-planes. An insulator sandwiched between two superconductors which acts as a potential barrier is demonstrated by a transparency coefficient. The effects of the potential barrier and the mis-orientation on the current are studied analytically and numerically. Occurrence of 0--π transition in this s+g-wave junction is investigated in this paper. A comparison between d-wave Josephson junction and s+g-wave one is also made in the present paper.