Growth and structure of vanadium oxide on anatase (1 0 1) terraces

The interaction of vanadium oxide with epitaxial anatase films exposing (1 0 1) terraces was characterized. The TiO₂ films were grown on vicinal LaAlO₃ (1 1 0) substrates by oxygen plasma-assisted molecular beam epitaxy (OPA-MBE); reflection high energy and low energy electron diffraction (RHEED and LEED) indicated that the films exposed (1 0 1) terraces of the anatase TiO₂ polymorph. When a vanadium oxide monolayer was deposited onto the anatase surface by OPA-MBE at 725 K, only (1 × 1) RHEED and LEED patterns were observed. The V X-ray photoelectron spectroscopy (XPS) peak intensities indicated that the monolayer wetted the anatase surface and so the diffraction patterns were attributed to an epitaxial vanadia layer. Analysis of the vanadium oxide monolayer by X-ray and ultraviolet photoelectron spectroscopies revealed that the V was predominantly 5+. When the vanadia coverage was increased at 725 K, Auger electron spectra showed only very slow attenuation of the anatase Ti peaks while spots began to develop in RHEED patterns recorded along the LaAlO₃ direction; both indicative of 3-D cluster formation. In the orthogonal direction, the RHEED patterns showed unusual diagonal streaks. Meanwhile, the (1 × 1) LEED pattern persisted even after 30 nm of vanadia was deposited. This was attributed to gaps between the 3-D clusters exposing the epitaxial monolayer. Core level XPS spectra of the 3-D clusters revealed a broad V 2p_3/2 peak that was centered at the position expected for V⁴⁺ but could be deconvoluted into three peaks corresponding to V³⁺, V⁴⁺, and V⁵⁺. It is shown that crystallographic shear that accommodates such variations in the oxygen content of V oxides can lead to the diagonal streaks in RHEED patterns recorded along the LaAlO₃ [0 0 1] direction even as the pattern in the orthogonal direction shows sharp transmission spots. The results show that vanadia growth on anatase (1 0 1) proceeds through the Stranski-Krastanov mode with a strong vanadia-titania interaction stabilizing a dispersed vanadia monolayer. The results are compared with previous data for vanadia growth on anatase (0 0 1) where smooth, epitaxial VO₂ films grow ad infinitum.     

Long range one-dimensional ordering of lead phthalocyanine monolayer on InSb(1 0 0) (4 × 2)/c(8 × 2)

Sub-monolayer and monolayer of lead phthalocyanine deposited on InSb(1 0 0) (4 × 2)/c(8 × 2) surface have been investigated by scanning tunneling microscopy and low energy electron diffraction. Molecules first adsorb on the indium rows of the (4 × 2)/c(8 × 2) structure in the [1 1 0] direction and diffuse at the surface in order to form two-dimensional islands. The molecule-substrate interaction stabilizes the PbPc molecules on the In rows. It weakens the interaction between molecules located in adjacent rows resulting in numerous gliding planes between the molecular chains, in the direction parallel to the rows. At monolayer completion, a long-range one-dimensional order is adopted by the molecules in the [1 1 0] direction.     

Femtosecond pulsed laser deposition of Ge quantum dot growth on Si(1 0 0)-(2 × 1)

Ge quantum dots were grown on Si(1 0 0)-(2 × 1) by femtosecond pulsed laser deposition at various substrate temperatures using a femtosecond Ti:sapphire laser. In situ reflection high-energy electron diffraction and ex situ atomic force microscopy were used to analyze the film structure and morphology. The morphology of germanium islands on silicon was studied at different coverages. The results show that femtosecond pulsed laser deposition reduces the minimum temperature for epitaxial growth of Ge quantum dots to ∼280 °C, which is 120 °C lower than previously observed in nanosecond pulsed laser deposition and more than 200 °C lower than that reported for molecular beam epitaxy and chemical vapor deposition.     

Molecular adsorption and growth of naphthalene films on Ag(1 0 0)

The adsorption of naphthalene, vacuum deposited on a Ag(1 0 0) surface, was comprehensively investigated by means of low-energy electron diffraction (LEED), temperature-programmed thermal desorption (TPD) spectroscopy, X-ray photoelectron spectroscopy (XPS), and polarization-dependent near-edge X-ray absorption fine structure (NEXAFS) spectroscopy in the mono- and multilayer regime. A growth of long-range ordered monolayer at 140 K is observed with LEED. The polarization-dependent C 1s NEXAFS shows that the naphthalene molecules in the monolayer lie almost parallel to the Ag(1 0 0) surface. With increasing film thickness, the molecular orientation turns to upright position. Furthermore, NEXAFS measurements show that in the multilayer regime the molecular orientation depends on the substrate temperature during deposition.     

Morphology and electronic structure of bcc Co(1 1 0) and fcc/hcp Co(1 1 1) on Fe(1 1 0) investigated by STM and STS

We report on the growth of ultrathin epitaxial Co films on Fe(1 1 0) examined by scanning tunneling microscopy and spectroscopy (STM and STS). At room temperature Co forms pseudomorphic, ideally ordered body-centered cubic (bcc) layers for the first two monolayers as confirmed by atomically resolved STM images. This is in contrast to the related case of Co/Cr(1 1 0) where a superstructure occurs in the second layer. The third monolayer forms a close-packed structure and causes a transformation of the buried second monolayer into a close-packed structure. The Fe(1 1 0) substrate strongly influences the electronic structure of the first Co monolayer as concluded from the dI/dU spectra. This influence is less important for the second monolayer. The measured local density-of-states function for the bcc Co double layer is in agreement with theoretical predictions for bcc Co.     

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

In this paper, GaAs thin film has been deposited on thermally desorbed (1 0 0) GaAs substrate using laser molecular beam epitaxy. Scanning electron microscopy, in situ reflection high energy electron diffraction and in situ X-ray photoelectron spectroscopy are applied for evaluation of the surface morphology and chemistry during growth process. The results show that a high density of pits is formed on the surface of GaAs substrate after thermal treatment and the epitaxial thin film heals itself by a step flow growth, resulting in a smoother surface morphology. Moreover, it is found that the incorporation of As species into GaAs epilayer is more efficient in laser molecular beam epitaxy than conventional molecular beam epitaxy. We suggest the growth process is impacted by surface chemistry and morphology of GaAs substrate after thermal treatment and the growth mechanisms are discussed in details.     

STM study of the initial stages of C60 adsorption on the Pt(1 1 0)-(1 × 2) surface

We have studied the initial stages of adsorption of C₆₀ on the Pt (1 1 0)-(1 × 2) surface by means of STM. At room temperature, fullerene molecules adsorb in the troughs between two adjacent Pt rows of the missing row reconstruction. Mobility over the terraces is negligible, denoting strong bonding with the surface, also testified by a well-defined orientation of fullerene monomers with respect to the substrate. Upon annealing at 750 K, molecular migration towards kinks and step edges occurs, where small islands nucleation begins. A commensurate registry with the substrate is maintained by small (5-10 molecules) C₆₀ aggregates, leading to expanded nearest-neighbour distances with respect to those found in hexagonal close packed fullerene ad-islands grown on other metallic substrates.     

Addimer chain structures: Metastable precursors to island formation on Ge-Si(0 0 1)-(2 × n) alloyed surface

We have identified addimer chain structures as metastable precursors to compact epitaxial islands on the (2 × n) reconstructed SiGe wetting layer, using polarity-switching scanning tunneling microscopy (STM). These chain structures are comprised of 2-12 addimers residing in the troughs of neighboring substrate dimer rows. The chain structures extend along equivalent 〈1 3 0〉 directions across the substrate dimer rows in a zigzag fashion, giving rise to kinked and straight segments. We measure a kink-to-straight ratio of nearly 2:1. This ratio corresponds to a free energy difference of 17 ± 4 meV, favoring the formation of kinked segments. The chain structures convert to compact epitaxial islands at elevated temperatures (?90 °C). This conversion suggests that the chain structures are a precursor for compact island formation on the SiGe wetting layer. We digitally process filled- and empty-state STM images to distinguish chain structures from compact islands. By monitoring the populations of both species over time, the chain-to-island conversion rates are measured at substrate temperatures ranging from 90 to 150 °C. The activation energy for the conversion process is measured to be 0.7 ± 0.2 eV with a corresponding pre-exponential factor of 5 × 10^4±2 s⁻¹.     

The interplay between molecular orientation, film morphology and luminescence properties of tetracene thin films on epitaxial AlOx/Ni3Al(1 1 1)

We report a systematic study of the interplay between molecular orientation, film morphology and luminescence properties of tetracene thin films on epitaxial alumina films on Ni₃Al(1 1 1), employing high resolution electron energy loss spectroscopy (HREELS), X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and photoluminescence spectroscopy (PL). If deposited at low temperatures, tetracene forms laterally disordered and compact films in which at least the first monolayer is oriented parallel to the substrate. For thicknesses in the range of 10 Å or below, these as-deposited films show no luminescence, while thicker films exhibit weak luminescence from higher layers. On annealing to 210 K, tetracene films dewet the AlO_x/Ni₃Al(1 1 1) surface and transform into an island morphology. At the same time, molecules tend to re-orient into a more upright configuration. In this island configuration, even thin films show luminescence. We can thus conclude that in spite of the insulating nature of the surface, the interaction of flat-lying tetracene molecules with AlO_x/Ni₃Al(1 1 1) is strong enough to provide at least one efficient non-radiative decay channel.     

para-Sexiphenyl thin film growth on Cu(1 1 0) and Cu(1 1 0)-(2 × 1)O surfaces

We present a reflectance difference spectroscopy (RDS) study of para-sexiphenyl (p-6P) thin film growth on Cu(1 1 0) and Cu(1 1 0)-(2 × 1)O substrates. The RDS spectra show pronounced anisotropies for p-6P films formed on both substrates at room temperature, demonstrating that the molecules are uniaxially aligned within the films. Based on the RD spectra and the evolution of the optical transitions with p-6P coverage the growth mode on both substrates could be identified. From the dominating RDS feature, assigned to the lowest energy HOMO-LUMO transition, the orientation of the molecular chain can be determined. On Cu(1 1 0), the p-6P molecular chains align in the direction, i.e., along the Cu atomic rows, whereas on the Cu(1 1 0)-(2 × 1)O surface, the molecules are oriented in the orthogonal [0 0 1] direction, i.e., along the “added” Cu-O rows of the Cu(1 1 0)-(2 × 1)O surface. The energetic position and line shape of the main RDS feature differs for the two substrates and varies with p-6P coverage. This fine structure is discussed in terms of different molecular conformations, adlayer structure and vibronic replicas.     

Bimodal growth of manganese silicide on Si(1 0 0)

Two different growth modes of manganese silicide are observed on Si(1 0 0) with scanning tunneling microscopy. 1.0 and 1.5 monolayer Mn are deposited at room temperature on the Si(1 0 0)-(2 × 1) substrate. The as-grown Mn film is unstructured. Annealing temperatures between room temperature and 450 °C lead to small unstructured clusters of Mn or Mn_xSi_y. Upon annealing at 450 °C and 480 °C, Mn reacts chemically with the Si substrate and forms silicide islands. The dimer rows of the substrate become visible again. Two distinct island shapes are found and identified as MnSi and Mn₅Si₃.     

Molecular assembly of tetracene on the (2 × 1)O reconstructed Cu(1 1 0) surface

Using a combination of scanning tunneling microscopy (STM) and density functional theory calculations, we have studied the adsorption of tetracene on the Cu(1 1 0) (2 × 1)O substrate. At monolayer coverage the adsorbed molecules are in the flat-laying geometry with their long axis along the close-packed [0 0 1] direction of the substrate and a long-range ordered structure on the length scale up to 100 nm has been observed. DFT calculation results indicate a stronger interaction between tetracene molecules and Cu(1 1 0) substrate than Cu(1 1 0) (2 × 1)O substrate. The preferential adsorption sites have also been pointed out on both substrates. The observed wavelike structure is explained by the interdigitation of C-H bonds of adjacent molecules.     

Si epitaxial growth on LaAlO3(0 0 1)

We report on the growth of Si on c(2 × 2) reconstructed LaAlO₃(0 0 1) surfaces at high substrate temperature (700 °C) by molecular beam epitaxy. An initial Volmer-Weber mode is evidenced using reflection high energy electron diffraction (RHEED), X-ray photoelectron diffraction (XPD) and atomic force microscopy. After the deposition of a few monolayers, the islands coalesce. Using X-ray photoelectron spectroscopy, we demonstrate that Si islands exhibit an abrupt interface with the LaAlO₃ substrate without formation of silicate or silica. Finally, combined RHEED and XPD measurements show the epitaxial growth of Si with a unique Si(0 0 1)//LaAlO₃(0 0 1) and Si<1 0 0>//LAO<1 1 0> relationship.     

Structure analysis of W(0 0 1)2 × 1-O surface at room and liquid nitrogen temperatures

Surface structure of O-adsorbed W(0 0 1) surface after annealing to 1200 K has been analyzed by low energy electron diffraction at 77 K as well as at room temperature. The optimum structure has tungsten missing rows and oxygen double rows. Furthermore, the R-factor is minimized at the structure that O atoms are adsorbed on one of the two different threefold hollow sites of the (1 1 0) facet appearing on the W(0 0 1)2 × 1 with missing row. However, the results suggest that two domains of O atoms adsorbed on both the two different threefold hollow sites coexist. Then, I-V curves have been analyzed as a function of the mixing ratio of the two domains having different O adsorption sites at room and low temperatures. The energy difference between these two sites has been estimated to be 6.5 meV from the temperature dependence of the mixing ratio.     

Epitaxial growth of bcc-FexCo100-x thin films on MgO(1 1 0) single-crystal substrates

Fe_xCo_100-x (x=100, 65, 50 at%) epitaxial thin films were prepared on MgO(1 1 0) single-crystal substrates heated at 300 °C by ultra-high vacuum molecular beam epitaxy. The film structure and the growth mechanism are discussed. FeCo(2 1 1) films with bcc structure grow epitaxially on MgO(1 1 0) substrates with two types of variants whose orientations are rotated around the film normal by 180° each other for all compositions. Fe_xCo_100-x film growth follows the Volmer Weber mode. X-ray diffraction analysis indicates the out-of-plane and the in-plane lattice spacings are in agreement with the values of respective bulk Fe_xCo_100-x crystals with very small errors less than ±0.4%, suggesting the strains in the films are very small. High-resolution cross-sectional transmission electron microscopy shows that periodical misfit dislocations are preferentially introduced in the film at the Fe₅₀Co₅₀/MgO interface along the MgO[1 1¯ 0] direction. The presence of such periodical dislocations decreases the large lattice mismatch of about −17% existing at the FeCo/MgO interface along the MgO[1 1¯ 0] direction.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

GaN/LiNbO3 (0 0 0 1) interface formation calculated from first-principles

The stable adsorption sites for both Ga and N ions on the ideal and on the reconstructed LiNbO₃ (0 0 0 1) surface are determined by means of first-principle total energy calculations. A single N layer is found to be more strongly bound to the substrate than a single Ga layer. The adsorption of a GaN monolayer on the polar substrate within different orientations is then modeled. On the basis of our results, we propose a microscopic model for the GaN/LiNbO₃ interface. The GaN and LiNbO₃ (0 0 0 1) planes are parallel, but rotated by 30° each other, with in-plane epitaxial relationship [1 0 0]_GaN‖ [1 1  0]_LiNbO3. In this way the (0 0 0 1) plane lattice mismatch between GaN and LiNbO₃ is minimal and equal to 6.9% of the GaN lattice constant. The adsorbed GaN and the underlying LiNbO₃ substrate have parallel c-axes.     

Chemically prepared well-ordered InP(0 0 1) surfaces

In the present work HCl-isopropanol treated and vacuum annealed InP(0 0 1) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InCl_x and phosphorus. Annealing at 230 °C induces desorption of InCl_x overlayer and reveals a P-rich (2 × 1) surface. Subsequent annealing at higher temperature induces In-rich (2 × 4) surface. The structural properties of chemically prepared InP(0 0 1) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers.     

Ultra-thin Si overlayers on the TiO2 (1 1 0)-(1 × 2) surface: Growth mode and electronic properties

The growth of thin subnanometric silicon films on TiO₂ (1 1 0)-(1 × 2) reconstructed surfaces at room temperature (RT) has been studied in situ by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), Auger electron and electron-energy-loss spectroscopies (AES and ELS), quantitative low energy electron diffraction (LEED-IV), and scanning tunneling microscopy (STM). For Si coverage up to one monolayer, a heterogeneous layer is formed. Its composition consists of a mixture of different suboxides SiO_x (1 < x ? 2) on top of a further reduced TiO₂ surface. Upon Si coverage, the characteristic (1 × 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Annealing the SiO_x overlayer results in the formation of suboxides with different stoichiometry. The LEED pattern recovers the characteristic TiO₂ (1 1 0)-(1 × 2) diagram. LEED I-V curves from both, substrate and overlayer, indicate the formation of nanometric sized SiO_x clusters.