The effect of oxygen exposure on pentacene electronic structure

We use ultraviolet photoelectron spectroscopy to investigate the effect of oxygen and air exposure on the electronic structure of pentacene single crystals and thin films. It is found that O₂ and water do not react noticeably with pentacene, whereas singlet oxygen/ozone readily oxidize the organic compound. Also, we obtain no evidence for considerable p-type doping of pentacene by O₂ at low pressure. However, oxygen exposure lowers the hole injection barrier at the interface between Au and pentacene by 0.25 eV, presumably due to a modification of the Au surface properties.     

Photoexcited carrier relaxation dynamics in pentacene probed by ultrafast optical spectroscopy: Influence of morphology on relaxation processes

We present a comparative study of ultrafast photoexcited state relaxation in pentacene single crystals and in pure and C₆₀-doped pentacene films using optical pump-probe spectroscopy. The photoinduced absorption spectra in pentacene crystals is consistent with a dominant singlet-triplet fission decay channel for above-gap excitation. This decay channel is suppressed in thin films and even further suppressed by electron trapping in C₆₀-doped films. Thus we show that suppression of triplet state production, which is necessary for free carrier formation and thus photovoltaic and photodiode performance, is controllable via sample morphology.     

Studies on morphology and molecular arrangement of pentacene on different substrates

Pentacene (C₂₂H₁₄) thin films with different thicknesses were fabricated to study the dynamic growth process and morphology of pentacene on different substrates. A discontinuous monomolecular layer was observed when a pentacene thin film is about 0.5 nm thick on native oxide silicon wafer. The terraced islands and dendritic structure gradually formed with increasing pentacene thin film thickness. The height of each layer is about 1.4 nm which corresponds well with the length of the long axis of the pentacene molecule at 1.45 nm. Experimental results show that the pentacene molecule is perpendicular to the silicon wafer surface with a slight tilted angle. However, the pentacene molecular orientation on a polymer pre-covered indium tin oxide coated substrate could not give any indication on the scale of nanometers. The surface roughness of substrates strongly influences pentacene molecular diffusion and the morphology of pentacene thin films.     

Exciton dynamics at interfaces of organic semiconductors

We review recent progress of using time-resolved two-photon photoelectron spectroscopy (2PPE) to study the energetics and dynamics of excitons at surfaces and interfaces of two prototypical organic semiconductors: C₆₀ and pentacene. For C₆₀ thin films epitaxially grown on Au(1 1 1) and Cu(1 1 1) surfaces, we observe both charge transfer and exciton states. For excitons in C₆₀, the proximity of a metal surface leads to rapid, exciton band-mediated quenching. At the surface of pentacene thin films we observe a series of charge-transfer excitons where the electron and the photohole are bound across the interface. The ability of 2PPE to measure and directly relate exciton levels to single-electron levels is illustrated.     

Oxidation kinetics of thin titanium films grown on tungsten

Growth of thin Ti films on (100)W and the kinetics of their oxidation are studied using thermal-desorption spectroscopy and Auger electron spectroscopy. Titanium films grow nearly layer by layer on the (100)W face at room temperature. The activation energy for desorption of Ti atoms decreases from 5.2 eV for coverage θ=0.1 to 4.9 eV in a multilayer film. Oxidation of a thin (θ=6) titanium film starts with dissolution of oxygen atoms in its bulk to the limiting concentration for a given temperature, after which the film oxidizes to TiO, with the TiO₂ oxide starting to grow when exposure of the film to oxygen is prolonged. The thermal desorption of oxides follows zero-order kinetics and is characterized by desorption activation energies of 5.1 (TiO) and 5.9 eV (TiO₂).     

Photoemission, NEXAFS and STM studies of pentacene thin films on Au(1 0 0)

We have investigated the initial stages of the growth of pentacene thin films on the Au(1 0 0) substrate using synchrotron radiation photoelectron spectroscopy (PES), near edge X-ray absorption fine structure (NEXAFS) and scanning tunnelling microscopy (STM). Results indicate a well-ordered structure with the pentacene molecules adopting a predominantly flat orientation with respect to the substrate for coverages of less than three monolayers. NEXAFS and photoemission data indicates the presence of a second molecular orientation for thicker films, with the introduction of a slight tilting away from planar bonding geometry at higher pentacene coverages. STM images of coverages less than three monolayers indicate a well-ordered pentacene structure allowing for the calculation of pentacene unit cell parameters. The pentacene molecular rows adopt a side-by-side bonding arrangement on the surface. For pentacene deposited at room temperature, step edges were observed to act as nucleation centres for film growth. Annealing of the substrate to 373 K was found to remove excess molecules and improve film quality, but did not otherwise change the bonding geometry of the pentacene with respect to the surface.     

Surface and interface properties of thin pentacene and parylene layers

To improve Organic Thin Film Transistor (OTFT) properties we study OTFT semiconductor/dielectric interfacial properties via examination of the gate dielectric using thin Parylene C layer. Structural and morphology properties of pentacene layers deposited on parylene layer and SiO₂/Si substrate structure were compared. The surface morphology was investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). AFM topography of pentacene layer in non-contact mode confirmed the preferable pentacene grain formation on parylene surface in dependence on layer thickness. The distribution of chemical species on the surfaces and composition depth profiles were measured by secondary ion mass spectroscopy (SIMS) and surface imaging. The depth profiles of the analyzed structures show a homogenous pentacene layer, characterized with C or C₂ ions. Relatively sharp interface between pentacene and parylene layers was estimated by characteristic increased intensity of CCl ions peak. For revealing the pentacene phases in the structures the Micro-Raman spectroscopy was utilized. Conformal coatings of parylene and pentacene layers without pinholes resulted from the deposition process as was confirmed by SIMS surface imaging. For the pentacene layers thicker than 20 nm, both thin and bulk pentacene phases were detected by Micro-Raman spectroscopy, while for the pentacene layer thickness of 5 and 10 nm the preferable thin phase was detected. The complete characterisation of pentacene layers deposited on SiO₂ and parylene surface revealed that the formation of large grains suggests 3D pentacene growth at parylene layer with small voids between grains and more than one monolayer step growth. The results will be utilized for optimization of the deposition process.      

Impact of molecular tilt angle on the absorption spectra of pentacene:perfluoropentacene blends

We investigate the relation between the optical properties and the average molecular tilt angle for blends of pentacene and perfluoropentacene, which can be considered as a prototypical donor–acceptor complex. Combining near‐edge X‐ray absorption fine‐structure spectroscopy and optical spectroscopy we study thin films of these compounds prepared at three different substrate temperatures T_sub. For T_sub =180 K we observe a larger average tilt angle than for blends prepared at higher substrate temperatures. This orientational change has significant impact on the uniaxial anisotropic optical properties of the mixed films which we measure post growth as well as in real‐time during growth. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electronic state observation of inner organic thin films beneath electrodes: Fluorescence-yield X-ray absorption spectra of pentacene derivative films

The electronic states of inner organic thin films have been investigated by X-ray absorption spectroscopy (XAS) in a bulk-sensitive fluorescence-yield (FY) mode with theoretical analysis. The thin films of the synthesized pentacene derivative, i.e., 6,13-dihydrodiazapentacence (C₂₀N₂H₁₄), on SiO₂-covered Si substrates were fabricated and their morphology and crystallinity were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis, respectively. The observed N K-edge FY-XAS spectra were different from the surface-sensitive XAS spectra measured in a partial-electron-yield (PEY) mode. The peaks on the FY-XAS spectra were well reproduced by the theoretical calculation of the unoccupied states of an HAPn molecule. In addition, the incident angle dependence of the FY-XAS spectra was consistent with the expected molecular orientation in the thin films. As a result, we successfully obtained the N and C K-edge FY-XAS spectra of the inner HAPn thin films even beneath Au electrodes.     

Effect of oxygen annealing on the photoresponse of PbSe thin films fabricated by the pulsed laser deposition method

In this work, we have fabricated lead selenide (PbSe) thin films by the pulsed laser deposition method on Si/SiO₂ substrates and investigated the effect of oxygen annealing (sensitization) in these films. The oxygen-sensitized films show high responsivity in the visible (VIS) and the near-infrared (NIR) region at room temperature without cooling. We also demonstrate the effective surface oxidation of PbSe thin films during the oxygen annealing process without treated with commonly used halogens that leads to a better photoresponse in these PbSe films.     

Oxidation and reduction of thin Ru films by gas plasma

The oxidation and reduction of Ru thin films grown on a Si(1 0 0) surface were studied by X-ray photoemission spectroscopy (XPS). Ru thin films were oxidized with O₂ plasma generated by an rf discharge, and their XPS spectra were measured. The spectra were decomposed into several components for Ru suboxides attributable to different stages of oxidation. After sufficient exposure to oxygen, a stoichiometric rutile RuO₂ layer was found to have formed near the surface. Thermal annealing at 500 K resulted in a thicker RuO₂ layer. Experiments demonstrated that the Ru oxide layer can be removed by H(D) atoms via the desorption of water molecules.     

Organic thin-film transistors of pentacene films fabricated from a supersonic molecular beam source

Top-contact organic thin-film transistors (OTFTs) of pentacene have been fabricated on bare SiO₂ and SiO₂ modified with hexamethyldisilazane (HMDS) and octadecyltrichlorosilane (OTS). The pentacene films were deposited from a supersonic molecular beam source with kinetic energy of incident molecules ranging from 1.5 to 6.7 eV. The field-effect mobility of OTFTs was found to increase systematically with increasing kinetic energy of the molecular beam. The improvements are more important on HMDS- and OTS-treated surfaces than on bare SiO₂. Tapping mode atomic force microscopy images reveal that pentacene thin films deposited at high kinetic energy form with significantly larger grains—independent of surface treatment—than films deposited using low-energy beams.     

Fabrication of cuprous and cupric oxide thin films by heat treatment

Cuprous oxide (Cu₂O) and cupric oxide (CuO) thin films were prepared by thermal oxidation of copper films coated on indium tin oxide (ITO) glass and non-alkaline glass substrates. The formation of Cu₂O and CuO was controlled by varying oxidation conditions such as, oxygen partial pressure, heat treatment temperature, and oxidation time. The microstructure, crystal direction, and optical properties of copper oxide films were measured with X-ray diffraction, atomic force microscopy, and optical spectroscopy. The results indicated that the phase-pure Cu₂O and CuO films were produced in the oxidation process. Optical transmittance and reflectance spectra of Cu₂O and CuO clearly exhibited distinct characteristics related to their phases. The electrical properties indicated that these films formed ohmic contacts with Cu and ITO electrode materials. Multilayers of Cu₂O/CuO were fabricated by choosing the oxidation sequence. The experimental results in this paper suggest that the thermal oxidation method can be employed to fabricate device quality Cu₂O and CuO films that are up to 200–300 nm thick.     

Thin film solid oxide fuel cells

We have investigated the deposition of 91% ZrO₂ − 9% Y₂O₃ thin films by a variety of sputtering techniques for the application as electrolytes in thin film solid oxide fuel cells. The deposition by RF sputtering was accomplished by using an oxide target of the desired composition. The deposition rate in these initial tests was limited to 0.5 μm/hr and the morphology of the film was substantially modified by deposition rate and substrate temperature. Using DC magnetron sputtering we deposited metallic films from a metallic target with the desired chemical composition. We introduced oxygen into the sputtering chamber to reactively deposit the desired 91% ZrO₂ − 9% Y₂O₃ thin films; however, we encountered problems with target oxidation and growth rate reproducibility. We subsequently demonstrated that controlled oxidation of the metallic films could result in adhering, non porous yttria stabilized zirconia films. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996     

Structural and photoluminescence properties of SnO2 obtained by thermal oxidation of evaporated Sn thin films

Tin oxide films have been prepared by oxidation of Sn thin films deposited by thermal evaporation method onto glass substrates. The oxidation of films was done, in air at a temperature of 500 °C, from 20 to 120 min. The oxidized films were characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), photoluminescence spectroscopy (PL) and surface profilometer. The XRD patterns show that the crystalline structure of the oxidized Sn films improves with the annealing time. The tetragonal SnO₂ phase (cassiterite) was obtained after 120 min of annealing with grains sizes between 15 and 20 nm. The thickness of oxide films, as function of the annealing time, follows a parabolic law. The O/Sn atomic ratio increases with the annealing time indicating an improvement of the films quality. Tin interstitials defects density, calculated from PL spectra using Smakula's formula, was found to decrease with the increasing annealing time. Tin interstitials defects density was found proportional to the increasing oxygen density (deduced from RBS). A fit of this proportionality allowed us to quantify the tin cations and oxygen anions diffused through the oxide films.     

Effects of oxygen content on the microstructures and optical properties of thermochromic vanadium oxide thin films

Reactive direct current magnetron sputtering and in situ thermal oxidation were used to prepare vanadium oxide (VO _X ) thin films with different oxygen contents. X-ray diffraction, Fourier transform infrared spectroscopy and a field emission scanning electron microscope were employed to characterize the films. The optical properties of the VO _X films at room temperature and 90 °C were investigated by applying an spectroscopic ellipsometer with a three-layer model of BEMA/Brendel–Bormann oscillator/substrate. It was demonstrated that the vanadium–oxygen bonds were strengthened, the film thickness and roughness decreased, while the grain size increased with increasing oxygen content. The increase in oxygen content had the effect of decreasing the near-infrared reflectance and free-electron concentration of the film at 90°C due to the decrease in the amount of VO₂.     

N-doping of pentacene by decamethylcobaltocene

We demonstrate n-type doping of pentacene with the powerful reducing molecule decamethylcobaltocene (CoCp₂^*). Characterization of pentacene films deposited in a background pressure of CoCp₂^* by X-ray photoemission spectroscopy and Rutherford backscattering confirm that the concentration of incorporated donor molecules can be controlled to a level as high as 1%. Ultraviolet photoemission spectroscopy show Fermi level (E _F) shifts toward unoccupied pentacene states, indicative of an increase in the electron concentration. A 1% donor incorporation level brings E _F to 0.6 eV below the pentacene lowest unoccupied molecular orbital. The corresponding electron density of ∼10¹⁸ cm⁻³ is confirmed by capacitance–voltage measurements on a metal–pentacene–oxide–silicon structure. The demonstration of n-doping suggests applications of CoCp₂^* to pentacene contacts or channel regions of pentacene OTFTs.     

Evidence for temperature-dependent electron band dispersion in pentacene

Evidence for temperature-dependent electron band dispersion in a pentacene thin film polymorph on graphite is provided by angle- and energy-dependent ultraviolet photoelectron spectroscopy. The bands derived from the highest occupied molecular orbital exhibit dispersion of approximately 190 meV at room temperature, and approximately 240 meV at 120 K. Intermolecular electronic coupling in pentacene thin films is thus confirmed to be dependent on temperature and possibly crystal structure, as suggested by additional infrared absorption measurements.     

The effect of gold on platinum oxidation in homogeneous Au-Pt electrocatalysts

Oxidation of Au-Pt thin films was carried out in ambient air at room temperature and characterized by X-ray photoelectron spectroscopy. The homogeneous films were prepared by RF co-sputtering with concentrations varying from Au₉Pt₉₁ to Au₈₉Pt₁₁ and compared to pure Pt and Au thin films. Spectral deconvolution of the Au 4f and Pt 4f core levels revealed linear peak shifts for both the Au-Au and Pt-Pt bonding components as a function of alloy mixture and metallic component peak asymmetry that remained constant for all alloy stoichiometries. The predominant oxidation products were PtO and PtO₂ and were characterized by stable core level binding energies for all films. A gradual decline in the Pt-O_x products and corresponding levels of elemental oxygen was observed with increasing Au content but was similar in proportion to the metallic Pt components. Based on these results, variations in Pt oxide phases and/or concentration do not appear to contribute to enhanced electrocatalytic activity for oxygen reduction observed for the intermediate alloy stoichiometries.     

Surface morphology characterization of pentacene thin film and its substrate with under-layers by power spectral density using fast Fourier transform algorithms

Surface morphology of pentacene thin films and their substrates with under-layers is characterized by using atomic force microscopy (AFM). The power values of power spectral density (PSD) for the AFM digital data were determined by the fast Fourier transform (FFT) algorithms instead of the root-mean-square (rms) and peak-to-valley value. The PSD plots of pentacene films on glass substrate are successfully approximated by the k-correlation model. The pentacene film growth is interpreted the intermediation of the bulk and surface diffusion by parameter C of k-correlation model. The PSD plots of pentacene film on Au under-layer is approximated by using the linear continuum model (LCM) instead of the combination model of the k-correlation model and Gaussian function. The PSD plots of SiO₂ layer on Au under-layer as a gate insulator on a gate electrode of organic thin film transistors (OTFTs) have three power values of PSD. It is interpreted that the specific three PSD power values are caused by the planarization of the smooth SiO₂ layer to rough Au under-layer.