The properties of K and coadsorbed CO + K on Ru (001): II. Electronic structure

The electronic properties of K and CO + K mixed layers on Ru(001) have been examined in detail with XPS, polarization and angle dependent UPS, and work function changes. The adsorption of K is accompanied by a gradual decrease of the K 2p binding energies and a normal work function behaviour which are discussed in detail. Adsorption of CO on K predosed surfaces also causes a K 2p binding energy decrease at all K coverages which can be understood as repulsion of substrate charge back into the K atom induced by CO orbitals overlapping with the substrate valence band. The complex change in work function caused by CO adsorption is explained by the combination of three effects, CO addition, charge exchange, and K displacement. All results in this and the first paper, in particular the additional peaks in the He I spectra and the HREELS results, are only compatible with the model of a sp²-rehybridized CO molecule in the vicinity of coadsorbed K.     

Understanding the electronic properties of molecule/metal junctions: The case study of thiols on gold

In this work, I review our recent results on the electronic properties of thiolate/metal interface. Work function change, molecular level alignment and interfacial state formation of the methylthiolate/Au(1 1 1) and dimethyl-disulfide/Au(1 1 1) interfaces are investigated by means of UPS and XPS. A complete picture of the electronic properties of both the dimethyl-disulfide (DMDS) weakly-adsorbed and the methylthiolate (MT) chemisorbed phases is obtained by direct quantitative comparison between the experiment and theory. The modifications of the electronic properties of the DMDS thin film, induced by a MT buffer layer are also discussed.Moreover, the cysteine/Au(1 1 1) system is investigated as an example of interface formed by molecules with large intrinsic dipole moment. Finally, surface inhomogeneity and its influence on the interface electronic properties is briefly discussed, in light of the important concept of local work function.     

Alkali metal intercalation into SnS2

The intercalation of sodium and potassium into the layered semiconductor SnS₂ has been investigated by ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), and ion scattering spectroscopy (ISS). After deposition of the alkali metals onto (0001) cleavage planes of SnS₂ in ultra high vacuum (UHV), semiconducting intercalation phases were formed. They seem to be homogeneous and disordered under the given experimental conditions. The valence electrons of the alkali metals are transferred into electronic states of the host lattice, whose valence band density of states changes significantly during intercalation. The underlying changes of the binding properties of the host lattice are discussed. The course of intercalation can be separated into three phases. During an induction period the concentration of the alkali metal on the surface remains very small, the electronic states of the substrate are shifted by band bending. During an intercalation period the topotactic reaction proceeds. After reaching saturation compositions of the intercalation phase at the surface, the alkali metal diffuses into the bulk. Crystal or surface defects seem to have a significant influence on the kinetics of intercalation and on the stoichiometry of the intercalation compounds.     

Interfacial electronic states of an anthracene derivative deposited on a SiO2 /Si substrate

The interfacial electronic states of an anthracene derivative (9,10-bis (methylthio) anthracene) on a SiO₂/Si(100) substrate were studied using ultraviolet photoelectron spectroscopy (UPS). From the UPS measurements, the work function of the sample surface was found to decrease with increasing molecular coverage in the sub-monolayer range. It is concluded that an interfacial electronic dipole (about 0.34 eV) forms at the molecule/ SiO₂ interface and decreases the effective work function.     

Electron spectroscopic studies of the adsorption of methanol on zinc oxide powder

X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and Auger electron spectroscopy (AES) have been used to study the adsorption of methanol on ZnO powder. The He(II) spectrum of electron-beam-eleaned ZnO was similar to that reported by Rubloff .¹ for the ZnO (11̄ 0 0) surface. The spectrum of methanol condensed at ?150°C matched that of gas-phase methanol. At low methanol coverages, difference spectra showed no increase in the methanol O(2p) lone pair binding energy reported to be indicative of chemisorption. A residual carbon and oxygen surface component on the ZnO powder may have prevented chemisorption. XPS measurements were found to be more useful in observing this layer than was AES. A decrease in the ZnO valence band intensity near the valence band maximum indicated that a strong interaction with the substrate had occurred.In this system the valence bands of the adsorbate and substrate overlap, and the true position of the methanol O(2p) lone pair orbital is obscured by the effects of the substrate band modification. Also, for insulators or semiconductors, a change in the measured position of the valence band maximum relative to the Fermi level may occur upon adsorption. Since the Zn(3d) core level should not be affected, it was used as an energy reference for the present work. The problems of energy referencing in UPS studies of adsorption on semiconductors are discussed.     

Electronic properties of single-walled V2O5 nanotubes

Atomistic models of quasi-one-dimensional vanadium pentoxide nanostructures—single-walled nanotubes formed by rolling (010) layers of V₂O₅ are constructed and their electronic properties and bond indices are studied using the tight-binding band method. We show that all zigzag (n,0)- and armchair (n,n)-like nanotubes are uniformly semiconducting, and the band gap trends to vanish as the tube diameters decrease. The V-O covalent bonds were found to be the strongest interactions in V₂O₅ tubes, whereas V-V bonds proved to be much weaker.     

Band offsets and electronic properties of the Ga2O3/FTO heterojunction via transfer of free-standing Ga2O3 onto FTO/glass

The determination of band offsets is crucial in the optimization of Ga₂O₃-based devices, since the band alignment types could determine the operations of devices due to the restriction of carrier transport across the heterogeneous interfaces. In this work, the band offsets of the Ga₂O₃/FTO heterojunction are studied using x-ray photoelectron spectroscopy (XPS) based on Kraut's method, which suggests a staggered type-Ⅱ alignment with a conduction band offset (ΔE_C) of 1.66 eV and a valence band offset (ΔE_V) of -2.41 eV. Furthermore, the electronic properties of the Ga₂O₃/FTO heterostructure are also measured, both in the dark and under ultraviolet (UV) illuminated conditions (254 nm UV light). Overall, this work can provide meaningful guidance for the design and construction of oxide hetero-structured devices based on wide-bandgap semiconducting Ga₂O₃.     

Interfacial electronic structure at a metal–phthalocyanine/graphene interface:Copper–phthalocyanine versus iron–phthalocyanine

The energy level alignment of CuPc and FePc on single-layer graphene/Ni(111)(SLG/Ni)substrate was investigated by using ultraviolet and X-ray photoelectron spectroscopy(UPS and XPS).The highest occupied molecular orbitals(HOMOs)in a thick layer of CuPc and FePc lie at 1.04 eV and 0.90 eV,respectively,below the Fermi level of the SLG/Ni substrate.Weak adsorbate–substrate interaction leads to negligible interfacial dipole at the CuPc/SLG/Ni interface,while a large interfacial dipole(0.20 eV)was observed in the case of FePc/SLG/Ni interface,due to strong adsorbate–substrate coupling.In addition,a new interfacial electronic feature was observed for the first time in the case of FePc on SLG/Ni substrate.This interfacial state can be attributed to a charge transfer from the SLG/Ni substrate to unoccupied orbitals of FePc.     

First surface electronic structure of a wurtzite-type semiconductor the polar and nonpolar surfaces of ZnO

We report the first calculations of the surface electronic structure for a Wurtzite-type semiconductor, namely ZnO. The bulk electronic properties of the material are described by a realistic empirical tight binding Hamiltonian which we obtained by fitting a selfconsistent pseudopotential bulk band structure and experimental bulk XPS and UPS data. Using the scattering theoretical method, we have calculated the surface band structures and wavevector-integrated as well as wavevector-resolved layer densities of states for polar and nonpolar ZnO surfaces. In agreement with experiment, we find no surface states in the gap on clean ZnO surfaces. Within the projection of the bulk valence and conduction bands, however, distinct surface features occur. First, there are ionic O-2p and Zn-4s surface states which have predominantly resonance character. In addition, more covalent back bond and anti back bond surface states are found which are occupied and empty, respectively. We find very good agreement with recent EELS and UPS surface data.     

Effect of the crystalline constitution of TiO2 substrates on the growth of ultrathin Mo layer

Metallic molybdenum was deposited by magnetron sputtering on amorphous and (110) rutile TiO₂ substrates. An interfacial reaction between the deposited Mo and the TiO₂ substrates generating Ti^3 +, Ti^2 + oxidation states is evidenced by X-ray photoelectron spectroscopy. Our XPS data suggest, as compared to the (110) rutile substrate, a higher reactivity of the amorphous TiO₂ leading to a stronger Mo oxidation. In both cases, this reaction, leads to the formation of MoO_x nanostructures at the interfaces. The growth mechanism of the Mo deposit as a function of the crystalline constitution of the TiO₂ substrate was analyzed by processing the XPS data using the Quases ® software. The data reveal a layer-by-layer growth of the Mo deposit on the (110) rutile substrate and a Stranski–Krastanov growth on the amorphous one. We explain these different growth modes based on the TiO₂ surface reactivity and electronic structure using the Cabrera–Mott theory. This explanation is supported by Time-of-Flight Secondary Ion Mass spectrometry profiling.     

Electronic structure of PdO studied by photoemission (XPS,UPS)

In this paper we present the results of photoemission studies (XPS and UPS) performed on a polycrystalline surface of PdO. The electron density of states (EDOS) deduced both from XPS and UPS (He_I and He_II) are very similar. The valence band of PdO, which differs significantly from the Pd one, can be built up by four structures located at 0.5 eV, 2.2eV, 4.5 eV and 6.5 eV below E_F. The various electronic contributions (p or d) in the band are considered and, in order to explain our spectra, we discuss several hypothesis taking into account the possible existence of satellite lines or crystal field effects. Our XPS and UPS spectra show that the energy bands of PdO are narrow (～ 2–3 eV), moreover the energy shift of the core levels (|ΔE^F_B| = 2 eV) is important : these results suggest that the correlations between the d electrons may be important in PdO.     

Chemical bonding and electronic structures at magnesium/copper phthalocyanine interfaces

Chemistry, electronic structure and electrical behavior at the interfaces between copper phthalocyanine (CuPc) and Mg with a reverse formation sequence were investigated using X-ray photoemission spectroscopy (XPS), ultraviolet photoemission spectroscopy (UPS), and current-voltage (I-V) measurements. A chemical reaction occurs between CuPc and Mg irrespective of the deposition sequence. Despite having different reaction zone thicknesses, both the CuPc-on-Mg and the Mg-on-CuPc interfaces exhibit chemistry-induced gap states and identical carrier injection barriers, which are confirmed by the symmetric electrical behavior obtained from I-V characteristics of devices with a structure of Mg/CuPc/Mg. These findings contrast with those expected from physisorptive noble metal-CuPc interfaces and suggest that strong local chemical bonding is a primary factor determining molecular level alignment at reactive metal-CuPc interfaces.     

Photoelectron-spectroscopic study of nickel,manganese and cobalt selenides

Photoelectron-spectroscopic studies (XPS and UPS) have been carried out to investigate electronic structure and chemical bonding in the monoselenides of nickel, manganese and cobalt. Binding-energy values and chemical shifts are reported from the XPS measurements for Ni 2p and 3s, Mn 2p and 3s, Co 2p and 3s and Se 3p and 3d. The electronic structure and bonding in the monoselenides are interpreted from an analysis of the valence-band spectra. The combined XPS and UPS data suggest transfer of electrons from the metal orbitals (Ni, Mn and Co) to selenium, contrary to bonding schemes proposed previously in the literature. Magnetic-susceptibility measurements performed by us indicate NiSe to be diamagnetic and MnSe and CoSe to be highly paramagnetic at room temperature. The presence of shake-up satellites in the XPS spectra for MnSe and CoSe and their absence for NiSe are discussed in relation to these magnetic properties.     

Charge transfer and polarization screening in organic thin films: phthalocyanines on Au(100)

Core hole screening effects at organic/metal interfaces were studied by core level X-ray photoemission spectroscopy (XPS), X-ray excited Auger electron spectroscopy (XAES), and valence band ultraviolet photoemission spectroscopy (UPS). The comparison of energetic shifts in XPS and XAES enables the estimation of electronic relaxation energy (screening ability). Magnesium phthalocyanine (MgPc) and zinc phthalocyanine (ZnPc) evaporated on single crystalline Au(100) were used as model molecules. Two different features in the Mg KLL spectra can be clearly separated for (sub-)monolayer coverages, while only minor changes of the shape of Mg 1s are observed. Applying a dielectric continuum model, the major screening mechanism cannot be described sufficiently by polarization screening due to mirror charges, significant contributions by charge transfer screening have to be considered. In contrast, small screening effects in the bulk material can be explained by surface polarization.     

Work function measurements on indium tin oxide films

We determined the work function of indium tin oxide (ITO) films on glass substrates using photoemission spectroscopy (PES). The ITO coated glass substrates were chemically cleaned ex-situ, oxygen plasma treated ex-situ, or sputtered in-situ. Our results suggest that the performance of ultraviolet photoemission spectroscopy (UPS) measurements can induce a significant work function reduction on the order of 0.4–0.5 eV, on ex-situ chemically and oxygen-plasma treated ITO samples. This was demonstrated by the use of low intensity X-ray photoemission spectroscopy (XPS) work function measurements before and after the UPS measurements were carried out.     

Spectroscopic analysis of CIGS2/CdS thin film solar cell heterojunctions on stainless steel foil

This paper presents a spectroscopic analysis of the interface between a CuIn_1−xGa_xS₂ (CIGS2) absorber and a CdS buffer layer on stainless steel foil by Auger electron spectroscopy (AES), inverse photoemission spectroscopy (IPES) and photoelectron spectroscopy (PES) such as X-ray photoelectron spectroscopy (XPS), and ultraviolet photoelectron spectroscopy (UPS). By combining these spectroscopic techniques, detailed information about the electronic and chemical properties of the CIGS2 surface and the CdS/CIGS2 interface can be obtained. The gallium concentration in CIGS2 films was found to increase continuously towards the Mo back contact. XPS analysis showed the presence of KCO₃ on the surface of CdS, deposited on etched and un-oxidized samples indicating diffusion of potassium. No potassium was observed on oxidized as well as samples having thicker CdS (50 nm) indicating the effectiveness of oxidation and chemical bath deposition (CBD) process in cleaning the sample surface effectively. In addition, investigation of the electronic level alignment at the interface has been carried out by combining PES and IPES. Conduction band offset of −0.45 (±0.15) eV and a valence band offset of −1.06 (±0.15) eV were measured. These unfavorable conditions limit efficiency of CIGS2 thin film solar cells.     

Preparation and spectroscopic characterization of γ-Al2O3 thin films

The electronic structure and surface properties of γ-Al₂O₃ thin films are studied. We have prepared the films by oxydizing Al foils under controlled conditions and we characterize the γ-Al₂O₃ samples by means of XPS, UPS, and TEM and found no charging. Pronounced effects in temperature-dependent changes of the work function are observed which result from changes in band bending and electron affinities by reorganisation and migration of defects. Thereby the ability of these systems for prototype studies in catalysis and analysis of defects is demonstrated.     

Electron spectroscopy studies of surface In-Ag alloy formation on the tungsten surface

XPS and UPS investigations of ultrathin films of In/Ag and Ag/In, deposited onto the W(1 1 0) surface in the ultrahigh vacuum conditions have been performed. Indium and silver films were formed by “in-situ” evaporation on W(1 1 0) substrate. XPS and UPS studies have been performed by means of SCIENTA ESCA200 instrument. The changes of In4d core-level and Ag4d valence band emissions with increasing Ag and In coverage were monitored to observe the energy shift and shape of the spin-orbit doublet of In4d and Ag4d lines in the Ag/In/W and In/Ag/W systems. UPS (HeI and HeII) measurements were supported by XPS AlK_α measurements of In3d and W4p levels, as well as by investigations of Ag3d levels. XPS and UPS data allowed to evaluate the coverage and make conclusions concerning intermixing and surface alloying in the In/Ag/W and Ag/In/W systems. W(1 1 0) substrate can be cleaned after each deposition by thermal desorption and no alloying in the In/W and Ag/W systems is observed.     

第一原理研究界面弛豫对InAs/GaSb超晶格界面结构、能带结构和光学性质的影响

通过广义梯度近似的第一原理全电子相对论计算, 研究了不同界面类型InAs/GaSb超晶格的界面结构、电子和光吸收特性. 由于四原子界面的复杂性和低对称性, 通过对InAs/GaSb超晶格进行电子总能量和应力最小化来确定弛豫界面的结构参数. 计算了InSb, GaAs型界面和非特殊界面(二者交替)超晶格的能带结构和光吸收谱, 考察了超晶格界面层原子发生弛豫的影响.为了证实能带结构的计算结果, 用局域密度近似和Hartree-Fock泛函的平面波方法进行了计算. 对不同界面类型InAs/GaSb超晶格的能带结构计算结果进行了比较, 发现界面Sb原子的化学键和离子性对InAs/GaSb超晶格的界面结构、 能带结构和光学特性起着至关重要的作用.     

Photoemission Spectroscopy and Electronic Structures of LiMn2O4

We study the electronic structures of LiMn2O4 by x-ray and ultraviolet photoelectron spectroscopy （XPS, UPS） and resonant photoelectron spectroscopy （RPES）. XPS data suggest that the average oxidation state of Mn ions is 3.55, probably due to the small amount of lithium oxides on the surface. UPS and RPES data imply that Mn ions are in a high spin state, and RPES results show strong Mn3d-O2p hybridization in the LiMn2O4 valence band.