Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Duree de vie et depolarisation par collisions avec l''helium des niveaux 5P3/2 Et 5P1/2 de l''ion Cd

The lifetimes of the Cd⁺ 5²P_3/2 and 5²P_1/2 states have been measured by the Hanle effect. The Cd⁺ ions are produced in a d.c. discharge in cadmium vapor, with helium as buffer gas. The results are: τ(5²P_3/2) = (2.60±0.20) ×10⁻⁹sec, and τ(5²P_1/2) = (3.05 ± 0.13) × 10⁻⁹sec.

We measured also the cross sections for the destruction of the orientation in the 5²P_1/2Cd⁺ state (<5Ų), of the orientation (18±10Ų) and of the alignment (46±10Ų) in the 5²P_3/2 state due to collisions with the helium atoms.     

Escape of charged particles at stopping annihilation of antiprotons in the heavy nuclei of nuclear photoemulsion

“Rare” annihilation channels for antiprotons stopping on heavy (Ag, Br) nuclei of photoemulsion, have been sought; 4872 stops of antiprotons on photoemulsion nuclei are analysed. Events of formation and decay of the hyperfragment _Λ⁴H, escape of ⁸He and ⁸Li nuclei, one-prong stars with the mean range 79.5±5.1 μm of secondary slow “b” particles are found among the annihilation stars at capture on nuclei (Ag, Br). The lower limits for the production probability of _Λ⁴H and ⁸He, ⁸Li nuclei per antiproton stopping in the nuclei (Ag, Br) are

W_Λ⁴H2×10⁻⁴ and W_⁸He,⁸Li=(1.3±0.6)×10⁻³.

The branching ratio for the production of one-prong stars with the secondary “b” particles is at least (1.3±0.6)×10⁻³. Possible mechanisms for a production of these events in annihilation processes are considered.     

Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 1]P_b centers (^*Si ≡ Si₃ defects with unpaired sp³ hybrid [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO₂ interface. This has been enabled by the perfectly reversible H₂ passivation of P_b, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the P_b density in the range 5 × 10¹⁰ < [P_b] (1.14 ± 0.06) × 10¹³ cm^-2. With increasing [P_b] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO₂ interfaces, dry thermally grown at ≈920°C, naturally comprise a ^*Si ≡ Si₃ defect density — passivated or not — of 1.14 × 10¹³ cm^-2.     

A new measurement of the weak magnetism term in the betaspectra of B and N

The betaspectra of ¹²B and ¹²N have been measured with a NaI crystal as spectrometer. Assuming a shape correction factor 1 + aW + bW² and b₋ = 1.106 × 10⁻⁴ MeV⁻², b₊ = −1.397 × 10⁻⁴ MeV⁻², the spectra yield a₋ = (+0.91 ± 0.11) × 10⁻² MeV⁻¹ and a₊ = (−0.07 ± 0.09) × 10⁻² MeV⁻. the a₋ − a₊ = (+0.98 ± 0.09) × 10⁻² MeV⁻¹ is in agreement with the weak magnetism prediction.     

π Meson interaction on He at 120, 145 and 165 MeV

The total cross sections and the differential cross sections of π⁺-⁴He elastic and inelastic reactions at E_π=120, 145 and 165 MeV have been measured using a 38 cm diffusion cloud chamber in a magnetic field exposed to the Frascati Laboratories' pion beam. Total π⁺ track lengths of (2141 ± 10) × 10³ cm, (3435 ± 10) × 10³ cm and (2413 ± 10) × 10³ cm were measured at the three considered energies, respectively. The elastic cross-section data are in good agreement with the results of the Dubna-Torino collaboration. The total inelastic cross sections have been obtained taking into account the contributions from all the inelastic channels. The analysis of the various inelastic processes has allowed us to distinguish five main reaction mechanisms, which compare reasonably with the existing data and with the models for pion-light-nuclei interactions.     

The BCC to FCC/HCP phase transformation of the Co70Fe30 alloy produced by ion irradiation of Co70Fe30/Cu discontinuous multilayers

We report on the BCC to FCC/HCP structural transformation of Co₇₀Fe₃₀ alloy produced by room temperature ion irradiation of Co₇₀Fe₃₀/Cu discontinuous multilayers. The structural changes were analyzed by X-ray diffraction and X-ray absorption spectroscopy. For this study, two different samples were examined, one irradiated with 50 keV He⁺ and another with 600 keV Kr⁺ with doses of 1×10¹⁷ and 3×10¹⁵ ions/cm², respectively. No substantial change is observed after He⁺ irradiation, while after Kr⁺ irradiation an unexpected structural transition from BCC to FCC/HCP closed packed of the Co₇₀Fe₃₀ alloy was found.     

Cross section of the charged current reaction C(ve, e)Ng.s.

The charged current nuclear transition ¹²C(v_e, e⁻)¹²N_g.s. has been observed in the KARMEN experiment. The flux average cross section for v_e from μ⁺ decay at rest is determined to be σ = [8.1±0.9(stat.)±0.75 (syst.)]×10⁻⁴²cm². For the first time also the energy dependence of the cross section has been measured for neutrino energies up to 50 MeV.     

Optical pumping of the 2p3sP0 State of Ne (I = 3/2): g factor and metastability exchange cross section

A C.W. multi-mode dye laser is used to obtain by optical pumping an orientation of the 2p⁵ 3s³P₀ (F = 3/2) state of ²¹Ne. A magnetic resonance experiment leads to the measurement of the g factor g (³P₀) = 3.027 (8) × 10⁻⁴ to be compared with the theoretical prediction (3.025(6) × 10⁻⁴). One obtains also the metastability exchange cross section σ(³P₀) = 18.4 ± 4 Ų for collisions between metastable (³P₀) Ne atoms and ground state Ne atoms. This result is compared with other measurements and theoretical evaluation.     

Domain wall pinning in polycrystalline perovskite La0.7Sr0.3MnO3

Reversible and irreversible domain wall (DW) motions have been investigated in La_0.7Sr_0.3MnO₃ ceramic samples using frequency-response complex permeability with various amplitudes of AC field. We also examine the effects of temperature in the range from 293 to 368 K and transverse DC magnetic field with a maximum of 4.40×10⁵ A/m on the real part of permeability (μ′). Two relaxations corresponding to reversible wall motions and domain rotations occur in low and high frequency regions, respectively. The irreversible DW displacements can be activated as the amplitude larger than the pinning field of 3 A/m, leading to an increase in μ′. The μ′ obeys a Rayleigh law at the temperature below 343 K or under DC field of less than 4.22×10⁴ A/m. The Rayleigh constant η increases from 5.45×10⁻² to 1.54×10⁻¹ (A/m)⁻¹ as the temperature rises from 293 to 343 K, and η decreases from 5.58×10⁻² to 3.67×10⁻² (A/m)⁻¹ with increasing DC field from 1.99×10³ to 4.22×10⁴ A/m.     

Transparent conductive oxide thin films of CdTe-doped indium oxide prepared by pulsed-laser deposition

Transparent conducting oxide thin film CdTe-doped indium oxide (In₂O₃) has been grown by pulsed-laser deposition from a target of CdTe powder embedded in metallic indium. The electro-optical and structural properties were investigated as a function of oxygen partial pressure (PO₂) and substrate temperature (T_s). A film deposited at T_s=420 °C and PO₂=4 Pa shows the minimum resistivity 7.5×10⁻⁴ Ω cm, its optical transmission is 83% and the carrier concentration was 8.9×10²⁰ cm³. The optical band gap and the average roughness of that sample were 3.6 eV and 6.45 Å, respectively. X-ray diffraction studies indicated that the films were polycrystalline. This material is a good candidate for being used as transparent conductor in the CdTe–CdS solar cell.     

Observation of two-photon emission in nuclear pion capture

The emission of two photons above 25 MeV energy was observed in the capture of stopped pions by beryllium and carbon with a rate of (1.0 ± 0.1) × 10⁻⁵, respectively (1.4 ± 0.2) × 10⁻⁵ per capture. These rates are about two to four times greater than various free-nucleon estimates based on the π⁻+π⁺→γγ annihilation mechanism alone.     

Surface tension and density measurements for indium and uranium using a sessile-drop apparatus with glow discharge cleaning

The sessile-drop method is used to measure the surface tension and density of liquid indium and uranium under high vacuum. Measurements are made over the temperature range 156–500°C for In and at the melting point for U. Surface oxides are efficiently removed with a glow discharge system. Drop profiles are captured by photograph and processed using nonlinear regression to yield the surface tension and density. In this regression procedure, normal distances from calculated profiles to data points are minimized. For indium, the density and surface tension measurements yield _mp = 7.05 × 10³kg/m³, d/dT = −0.776 kg/m³·°C, and γ_mp = 0.568 N/m, dγ/dT = −9.45 × 10⁻⁵ N/m·°C. The results for uranium at the melting point are _mp = 17.47 × 10³ kg/m³ and γ_mp = 1.653 N/m.     

Determination of different oxygen transport mechanisms and measurement of the oxygen ion conductivity of Y1Ba2Cu3O7−x

By undertaking AC electrochemical impedance experiments on yttria stabilised zirconia electrolytes with polished Y₁Ba₂Cu₃O_7−x electrodes, the activation energy for oxygen ion transport within the bulk of Y₁Ba₂Cu₃O_7−x, in air, over the temperature range 823 K–1043 K, was determined to be 1.50 ± 0.05 eV. At 1000 K the oxygen ionic conductivity was calculated to be around one order of magnitude lower than that in yttria stabilised zirconia. Typical calculated values were σ=5×10⁻⁵ (ω cm)⁻¹ and 6×10⁻³ (ω cm)⁻¹ at the respective temperatures 823 K and 1043 K. By employing a similar cell but with Y₁Ba₂Cu₃O_7−x paste electrodes, oxygen transfer between the Y₁Ba₂Cu₃O_7−x and the electrolyte was found to occur via a surface diffusional processes. Over the temperature range 873 K–1098 K, in air, the activation energy for in-diffusion at the surface was found to be 1.4±0.1 eV and that for out-diffusion at the surface to be 1.76±0.05 eV.     

Correlation between electrical, optical properties and Ag centers of ZnO:Ag thin films

ZnO:Ag films have been fabricated on a n-Si (1 1 1) substrate and then annealed in situ in an O₂ ambient, using Ag₂O as a silver dopant by pulsed laser deposition. Hall measurements reveal that the films prepared at 400 and 450 °C show p-type behavior with a hole concentration of 6.3×10¹⁶–1.2×10¹⁷ cm^–3 and a mobility of 2.48–3.30 cm²/V s. By combining Hall measurements, electron paramagnetic resonance (EPR) signals, and photoluminescence (PL) spectra, a correlation is observed between the free hole carriers, the Ag²⁺ centers, and the neutral acceptor bound excitons. Additionally, the p-ZnO:Ag/n-Si heterojunction shows a diode-like I–V characteristic.     

Optical second-harmonic investigations of the isothermal desorption of SiO from the Si(100) and Si(111) surfaces

The isothermal desorption of SiO from the Si(100) and Si(111) surfaces was investigated by means of optical second-harmonic generation (SHG). Due to the high adsorbate sensitivity of this method, desorption rates could be measured over a wide range from 10⁻¹ to 10⁻⁶ ML s⁻¹. From their temperature dependence between 780 and 1000 K, activation energies of E_A=3.4±0.2 eV and E_A=4.0±0.3 eV and pre-exponential factors of ν₀=10^16±1 s⁻¹ and ν₀=10^20±1 s⁻¹ for SiO desorption were obtained for Si(100) and Si(111), respectively. In the case of the Si(100) surface, a pronounced decrease of the first-order rate constants was observed upon increasing the initial coverage from 0.02 to 0.6 ML. The results are interpreted in terms of coverage-dependent oxygen-binding configurations, which influence the stability of the oxide layer.     

Quadrupole interactions in pionic and muonic tantalum and rhenium

The hyperfine splitting of pionic and muonic X-rays in natural Re has been studied using the known ratio (accurate to 1.6 parts in 10⁵) of the quadrupole moments of the two naturally occurring ¹⁸⁵Re and ¹⁸⁷Re isotopes. From the hyperfine splitting of the ⁵g → 4f and 4f → 3d pionic X-rays the effective quadrupole hyperfine constants were determined to be ¹⁸⁷A₂^eff(4f) = 1.163 ± 0.010 keV and ¹⁸⁷A₂^eff(3d) = 5.39 ± 0.63 keV, giving strong interaction quadrupole shifts ₂(4f) = 46 ± 10 eV and ₂(3d) = 1.3 ± 0.6 keV. The strong interaction monopole shifts ₀ and widths Γ₀ of the 5g, 4f and 3d levels have also been measured. For the two higher orbits, standard optical-potential calculations fit the measured shifts and widths quite well. The observed deeper-lying 3d state, however, has shifts and widths that differ by a factor of 2 or more from the predictions. From the measured quadrupole hyperfine constants of the 4f level we calculate the spectroscopic quadrupole moments to be ¹⁸⁷Q^μ(gm) = 2.09 ± 0.04 b, ¹⁸⁷Q^π = 2.07 ± 0.02 b, ¹⁸⁵Q^μ = 2.21 ± 0.04 b, and ¹⁸⁵Q^π = 2.1 addition, muonic X-rays from ¹⁸¹Ta were observed; using the same methods for determining the quadrupole moment as above, a value of ¹⁸¹Q^μ = 3.28 ± 0.06 b was obtained, in good agreement with earlier published data.     

Symmetry breaking and the decays ψ′ → J/ψπ(η) and J/ψ → η(η′) γ

The theoretical mechanisms for the decays ψ′ → ψπ⁰ and ψ′ → ψη, which violate SU₂ and SU₃, respectively discussed. It is argued that symmetry breaking in the decay amplitudes may be as important as π⁰ −η −η′ mixing. The π⁰ −η mechanism ψ′ → ψν → ψπ⁰ leads to Γ(ψ′ → ψπ⁰) = (3.3±1.0) × 10⁻³ Γ(ψ′ → ψν), but this number may be enhanced by a factor as large as 12 by π⁰−η′ mixing and isospin violation in the decay amplitude. The related decays ψ → ηγ and ψ → η′γ are also discussed.     

βγ(CP) correlation measurements and anti-analogue structure in the decay of Ca

β-γ(CP) correlation measurements have been carried out on the sequence in the decay of the ground state of ⁴⁹Ca to the (presumed) anti-analogue state at 3.105 MeV excitation in ⁴⁹Sc. An asymmetry parameter of A = −0.132 ± 0.017 was obtained, making any spin-parity assignment other than very unlikely for the 3.105 MeV state. The deduced Fermi matrix element for the decay is |M_{v| = |1.4 ± 9.7| × 10⁻³}, which leads to an isospin impurity ( ) corresponding to the mixing of the analogue state (at 11.6 MeV) and the 3.105 MeV state of ||² 1.6 × 10⁻⁵. This leads in turn to an effective Coulomb matrix element of |H_c| = |3.9 ± 27.4| keV, a low value compared to the value of 100 keV obtained from a theoretical estimate based on simple shell-model wave functions for the single-particle states involved.