Low-field AC susceptibility in Pr1−xHoxMn2Ge2

We report the structure and magnetic properties of Pr_1−xHo_xMn₂Ge₂ (0.0≤x≤1.0) germanides by means of X-ray diffraction (XRD), differential scanning calorimetry (DSC) techniques and AC magnetic susceptibility measurements. All compounds crystallize in the ThCr₂Si₂-type structure with the space group I4/mmm. Substitution of Ho for Pr leads to a linear decrease in the lattice constants and the unit cell volume. The samples with x=0 and x=0.8 have spin reorientation temperature. The results are collected in a phase diagram.     

Influence of Ho substitution for Nd on magnetic properties of the Nd1−xHoxMn2Ge2 germanides

The structure and magnetic properties of Nd_1−xHo_xMn₂Ge₂ (0.0≤x≤1.0) germanides were studied by X-ray diffraction (XRD), differential scanning calorimetry (DSC) techniques and AC magnetic susceptibility measurements. All compounds crystallize in the ThCr₂Si₂-type structure with the space group I4/mmm. Substitution of Ho for Nd leads to a linear decrease in the lattice constants and the unit cell volume, and the magnetic interactions in the Mn sublattice cross over from a ferromagnetic character to an antiferromagnetic one. A typical SmMn₂Ge₂-like behavior is observed for x=0.6 and 0.8. The results are collected in a phase diagram.     

Structure, transport and magnetic properties in La2xSr2−2xCo2xRu2−2xO6

The perovskite solid solutions of the type La_2xSr_2−2xCo_2xRu_2−2xO₆ with 0.25≤x≤0.75 have been investigated for their structural, magnetic and transport properties. All the compounds crystallize in double perovskite structure. The magnetization measurements indicate a complex magnetic ground state with strong competition between ferromagnetic and antiferromagnetic interactions. Resistivity of the compounds is in confirmation with hopping conduction behaviour though differences are noted especially for x=0.4 and 0.6. Most importantly, low field (50 Oe) magnetization measurements display negative magnetization during the zero field cooled cycle. X-ray photoelectron spectroscopy measurements indicate the presence of Co²⁺/Co³⁺ and Ru⁴⁺/Ru⁵⁺ redox couples in all compositions except x=0.5. Presence of magnetic ions like Ru⁴⁺ and Co³⁺ gives rise to additional ferromagnetic (Ru-rich) and antiferromagnetic sublattices and also explains the observed negative magnetization.     

Magnetocaloric effect of GdCo2−xAlx compounds

The structure, magnetic property and magnetocaloric effect of GdCo_2−xAl_x (x=0, 0.06, 0.12, 0.18, 0.24, 0.4) compounds have been investigated by X-ray diffraction (XRD) and magnetic measurement techniques. The experimental results show that the GdCo_2−xAl_x (x≤0.4) compounds are single phase with a Laves-phase MgCu₂-type structure. The Curie temperature T_c initially increases, and then decreases with increasing Al content. The maximum value of T_c, 418 K, is reached for the compound with x=0.06. The magnetic entropy change, which is determined from the temperature and field dependence of the magnetization by the Maxwell relation, decreases almost linearly with increasing Al content.     

Bulk Sn1−xMnxO2 magnetic semiconductors without room-temperature ferromagnetism

Polycrystalline Sn_1−xMn_xO₂ (0≤x≤0.05) diluted magnetic semiconductors were prepared by solid-state reaction method and their structural and magnetic properties had been investigated systematically. The three Mn-doped samples (x=0.01, 0.03, 0.05) undergo paramagnetic to ferromagnetic phase transitions upon cooling, but their Curie temperatures are far lower than room temperature. The magnetization cannot be attributed to any identified impurity phase. It is also found that the magnetization increases with increasing Mn doping, while the ratio of the Mn ions contributing to ferromagnetic ordering to the total Mn ions decreases.     

Enhanced ferroelectric, magnetic and magnetoelectric properties of Bi1−xCaxFe1−xTixO3 solid solutions

We report on the enhanced electromechanical, magnetic and magnetoelectric properties of Bi_1−xCa_xFe_1−xTi_xO₃ solid solutions. The crystal structure of the x≈0.25 compounds are close to the rhombohedral-orthorhombic phase boundary, and the solid solutions are characterized by increased electromechanical properties due to the polarization extension near the polar-nonpolar border. The homogenous weakly ferromagnetic state is established at x>0.15 doping. The chemical doping shifts the magnetic transition close to room temperature, thus enlarging the magnetic susceptibility of the compounds. The solid solutions at the morphotropic phase boundary exhibit a nearly twofold increase in piezoelectric response, whereas the magnetoelectric coupling shows five times enhancement in comparison with the parent bismuth ferrite.     

Influence of Ce doping on electrical and thermal properties of La0.7−xCexCa0.3MnO3 (0.0≤x≤0.7) manganites

The effect of Ce-doping on structural, magnetic, electrical and thermal transport properties in hole-doped manganites La_0.7−xCe_xCa_0.3MnO₃ (0.0≤x≤0.7) is investigated. The structure of the compounds was found to be crystallized into orthorhombically distorted perovskite structure. dc Susceptibility versus temperature curves reveal various magnetic transitions. For x≤0.3, ferromagnetic regions (FM) were identified and the magnetic transition temperature (T_C) was found to be decreasing systematically with increasing Ce concentration. The electrical resistivity ρ(T) separates the well-define metal-semiconducting transition (T_MS) for low Ce doping concentrations (0.0≤x≤0.3) consistent with magnetic transitions. For the samples with 0.4≤x≤0.7, ρ(T) curves display a semiconducting behavior in both the high temperature paramagnetic (PM) phase and low temperature FM or antiferromagnetic phase. The electron–phonon and electron–electron scattering processes govern the low temperature metallic behavior, whereas small polaron hopping model is found to be operative in PM phases for all samples. These results were broadly corroborated by thermal transport measurements for metallic samples (x≤0.3) in entire temperature range we investigated. The complicated temperature dependence of Seebeck coefficient (S) is an indication of electron–magnon scattering in the low temperature magnetically ordered regime. Specific heat measurements depict a broadened hump in the vicinity of T_C, indicating the existence of magnetic ordering and magnetic inhomogeneity in the samples. The observation of a significant difference between ρ(T) and S(T) activation energies and a positive slope in thermal conductivity κ(T) implying that the conduction of charge carriers were dominated by small polaron in PM state of these manganites.     

Structure and superconductivity of Mg1−xPbxB2

A series of polycrystalline samples of Mg_1−xPb_xB₂ (0≤x≤0.10) were prepared by a solid state reaction method and their structure, superconducting transition temperature and transport properties were investigated by means of X-ray diffraction (XRD) and resistivity measurements. Mg_1−xPb_xB₂ compounds were shown to adopt an isostructural AlB2-type hexagonal structure in a relatively small range of lead concentration, x≤0.01. The crystalline lattice constants were evaluated and were found to exhibit slight length compression as x increases. The superconducting transition temperature (T_c) steadily decreases with Pb doping. It is suggested that the mechanism of superconductivity reduction by lead doping can be attributed to the chemical pressure effect.     

Field and temperature induced colossal strain in Gd5(SixGe1−x)4

Gd₅(Si_xGe_1−x)₄, known for its giant magnetocaloric effect, also exhibits a colossal strain of the order of 10,000 ppm for a single crystal near its coupled first-order magnetic-structural phase transition, which occurs near room temperature for the compositions 0.41≤x≤0.575. Such colossal strain can be utilised for both magnetic sensor and actuator applications. In this study, various measurements have been carried out on strain as a function of magnetic field strength and as a function of temperature on single crystal Gd₅Si₂Ge₂ (x=0.5), and polycrystalline Gd₅Si_1.95Ge_2.05 (x=0.487) and Gd₅Si_2.09Ge_1.91 (x=0.52). Additionally a giant magnetostriction/thermally induced strain of the order of 1800 ppm in polycrystalline Gd₅Si_2.09Ge_1.91 was observed at its first order phase transition on varying temperature using a Peltier cell without the use of bulky equipment such as cryostat or superconducting magnet.     

Structural, magnetic and magnetocaloric properties of the Gd5Si4−xSbx (x=0.5-3.5) phases

Substitution of Sb for Si in the Gd₅Si₄ phase results in the formation of ternary Gd₅Si_4−xSb_x phases with three different structure types. For x≤0.38 the Gd₅Si₄-type structure (Pnma space group) with all interslab T-T dimers intact exists (T is Si or Si/Sb mixture), in the x=1.21-1.79 region the Sm₅Ge₄-type structure (Pnma) with all interslab dimers broken is found. A further increase in the Sb concentration (x=2.27-3.1) leads to the appearance of the Eu₅As₄-type structure (Cmca) with broken but equivalent interslab T?T bonds. The Gd₅Si_4−xSb_x phases with 1.21≤x≤3.1 undergo ferromagnetic transitions in the temperature range from 164 to 295 K. Magnetocaloric effect in terms of the isothermal entropy change, ΔS, reaches the maximum values of -3.7(4), -4.2(6) and -4.6(7) J/kg K for the Gd₅Si₂Sb₂, Gd₅Si_1.5Sb_2.5 and Gd₅SiSb₃ samples, respectively.     

Structural, magnetic and transport properties in the manganites La0.7Sr0.3−xTexMnO3 (0≤x≤0.15)

The effect of Te-doping at La-site on structural, magnetic and transport properties in the manganites La_0.7Sr_0.3−xTe_xMnO₃ (0≤x≤0.15) has been investigated. All samples show a rhombohedral structure with the space group . It shows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increases with the increase of Te content. The Curie temperature T_C decreases with increasing Te-doping level, in contrast, the magnetization magnitude of Te-doping samples at low temperatures increase with increasing x as x≤0.05 and then decrease with further increasing x to 0.15. The results are discussed in terms of the combined effects of the opening of the new double exchange (DE) channel between Mn²⁺-O-Mn³⁺ due to the introduction of Mn²⁺ ions because of the substitution of Te⁴⁺ for Sr²⁺ and the reduction of the transfer integral b due to the decrease of the Mn-O-Mn bond angle.     

The influence of substitution of Co for Mn on magnetism of the HoMn6−xCoxSn6 compounds (0⩽x⩽0.25)

We have studied the effects of Co substitution for Mn on the structure and magnetic properties of the HoMn_6−xCo_xSn₆ compounds (0?x?0.25) with HfFe₆Ge₆-type structure (space group P6/mmm) by X-ray powder diffraction and magnetization measurements. A monotonic decrease of the lattice parameters a and c is observed with increasing Co content. While the compounds with x=0 and 0.05 exhibit ferrimagnetism in the whole temperature range, the compounds with 0.1?x?0.15 show ferrimagnetism, helimagnetism and re-entrant ferrimagnetism with decreasing temperature. For the compounds with x=0 and 0.05, the spin reorientation temperature is observed. A metamagnetic transition from helimagnetic magnetic ordering to ferrimagnetism is observed for the compounds with x=0.1 and 0.2. The results are summarized in the HoMn_6−xCo_xSn₆ magnetic phase diagram.     

Annealing of thin Zr films on Si1−xGex(0≤x≤1): X-ray diffraction and Raman studies

X-ray diffraction experiments have been combined with Raman scattering and transmission electron microscopy data to analyze the result of rapid thermal annealing (RTA) applied to Zr films, 16 or 80 nm thick, sputtered on Si_1−xGe_x epilayers (0≤x≤1). The C49 Zr(Si_1−xGe_x)₂ is the unique phase obtained after complete reaction. ZrSi_1−xGe_x is formed as an intermediate phase. The C49 formation temperature T_f is lowered by the addition of Ge in the structure. Above a critical Ge composition close to x=0.33, a film microstructure change was observed. Films annealed at temperatures close to T_f are continuous and relaxed. Annealing at T>T_f leads to discontinuous films: surface roughening resulting from SiGe diffusion at film grain boundaries occurred. Grains are ultimately partially embedded in a SiGe matrix. A reduction in the lattice parameters as well as a shift of Raman lines are observed as T exceeds T_f. Both Ge non-stoichiometry and residual stress have been considered as possible origins for these changes. However, as Ge segregation has never been detected, even by using very efficient techniques, it is thought that the changes originate merely from residual stress. The C49 grains are expected to be strained under the SiGe matrix effect and shift of the Raman lines would indicate the stress is compressive. Some simple evaluations of the stress values indicate that it varies between −0.3 and −3.5 GPa for 0≤x≤1 which corresponds to a strain in the range (−0.11, −1.15%). X-ray and Raman determinations are in good agreement.     

The correlation between structure and magnetic properties in the manganites La0.7Ca0.3−xTexMnO3 (0≤x≤0.15)

The effect of Te-doping at La-site on structural, magnetic and transport properties in the manganites La_0.7Ca_0.3−xTe_xMnO₃ (0≤x≤0.15) has been investigated. All samples show an orthorhombic structure (O′-Pbnm) at room temperature. It shows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increases with the increase in the Te content. All samples exhibit an insulator-metal (I-M) transition and the resistivity increases with the increase in the Te-doping level. Additionally, the Curie temperature T_c decreases and the transition becomes broader with increasing Te-doping level, in contrast, the magnetization of Te-doping samples at low temperatures decrease with increasing x as x≤0.10 and then increase with further increasing x to 0.15. The results are discussed in terms of Jahn-Teller (JT) vibrational anisotropy Q₃/Q₂ and the opening of the new DE channel between Mn²⁺-O-Mn³⁺ due to the introduction of Mn²⁺ ions because of the substitution of Te⁴⁺ ions for Ca²⁺ ions.     

Positive secondary Ion emission from Si1−xGex bombarded by O2

The positive secondary ion yields of B⁺ (dopant), Si⁺ and Ge⁺ were measured for Si_1−xGe_x (0 ≤ x ≤ 1) sputtered by 5.5 keV ¹⁶O₂⁺ and ¹⁸O₂⁺. It is found that the useful yields of Ge⁺ and B⁺ suddenly drop by one order of magnitude by varying the elemental composition x from 0.9 to 1 (pure Ge). In order to clarify the role of oxygen located near surface regions, we determined the depth profiles of ¹⁸O by nuclear resonant reaction analysis (NRA: ¹⁸O(p,α)¹⁵N) and medium energy ion scattering (MEIS) spectrometry. Based on the useful yields of B⁺, Si⁺ and Ge⁺ dependent on x together with the elemental depth profiles determined by NRA and MEIS, we propose a probable surface structure formed by 5.5 keV O₂⁺ irradiation.     

Formation mechanism of ferromagnetism in Si1−xMnx diluted magnetic semiconductors

Si_1−xMn_x diluted magnetic semiconductor (DMS) bulks were formed by using an implantation and annealing method. Energy dispersive X-ray fluorescence, transmission electron microscopy (TEM), and double-crystal rocking X-ray diffraction (DCRXD) measurements showed that the grown materials were Si_1−xMn_x crystalline bulks. Hall effect measurements showed that annealed Si_1−xMn_x bulks were p-type semiconductors. The magnetization curve as a function of the magnetic field clearly showed that the ferromagnetism in the annealed Si_1−xMn_x bulks originated from the interaction between interstitial and substitutional Mn⁺ ions, which was confirmed by the DCRXD measurements. The magnetization curve as a function of the temperature showed that the ferromagnetic transition temperature was approximately 75 K. The present results can help to improve understanding of the formation mechanism of ferromagnetism in Si_1−xMn_x DMS bulks.     

Magnetic properties of Mn-rich Rh2Mn1+xSn1−x Heusler alloys

X-ray powder diffraction and magnetization measurements have been carried out on Rh₂Mn_1+xSn_1−x (0≤x≤0.3) alloys. The alloys, which crystallize in the L2₁ structure, were found to exhibit ferromagnetic behavior. The lattice constant a at room temperature decreases with increasing x, whereas the Curie temperature T_C decreases linearly. At 5 K the magnetic moment per formula unit first increases with increasing x and then saturates for x≥0.2. The experimental results are discussed in terms of the influence of the Mn-Mn exchange interactions between the Mn atoms on the Sn and Mn sites.     

Critical behaviour and magnetic properties of A-B spinel ZnxCu1−xFe2O4

Polycrystalline Zn_0.6Cu_0.4Fe₂O₄ ferrites have been prepared using a solid-state reaction technique. Their structural and magnetic properties have been studied, using X-ray diffraction and Mössbauer and magnetic measurements. These results have been compared to a more general theoretical study, on Zn_xCu_1−xFe₂O₄, based on mean field theory and high-temperature series expansions (HTSE), and extrapolated with the Padé approximant method. The nearest neighbour super-exchange interactions for the intra-site and the inter-site of Zn_xCu_1−xFe₂O₄ spinel ferrites, in the range 0≤x≤1, have been computed using the probability approach, based on Mössbauer data. The Curie temperature T_C is calculated as a function of Zn concentration. The theoretical results obtained are in good agreement with the experimental results obtained by magnetic measurements.     

The effect of different temperature annealing on phase relation of LaFe11.5Si1.5 and the magnetocaloric effects of La0.8Ce0.2Fe11.5−xCoxSi1.5 alloys

The phase relation of LaFe_11.5Si_1.5 alloys annealed at different high-temperature from 1223 K (5 h) to 1673 K (0.5 h) has been studied. The powder X-ray diffraction (XRD) patterns show that large amount of 1:13 phase begins to form in the matrix alloy consisting of α-Fe and LaFeSi phases when the annealing temperature is 1423 K. In the temperature range from 1423  to 1523 K, α-Fe and LaFeSi phases rapidly decrease to form 1:13 phase, and LaFeSi phase is rarely observed in the XRD pattern of LaFe_11.5Si_1.5 alloy annealed at 1523 K. With annealing temperature increasing from 1573  to 1673 K, the LaFeSi phase is detected again in the LaFe_11.5Si_1.5 alloy, and there is La₅Si₃ phase when the annealing temperature reaches 1673 K. There almost is no change in the XRD patterns of LaFe_11.5Si_1.5 alloys annealed at 1523 K for 3-5 h. According to this result, the La_0.8Ce_0.2Fe_11.5−xCo_xSi_1.5 (0≤×≤0.7) alloys are annealed at 1523 K (3 h). The analysis of XRD patterns shows that La_0.8Ce_0.2Fe_11.5xCo_xSi_1.5 alloys consist of the NaZn₁₃-type main phase and α-Fe impurity phase. With the increase of Co content from x=0 to 0.7, the Curie temperature T_C increases from 180 to 266 K. Because the increase of Co content can weaken the itinerant electron metamagnetic transition, the order of the magnetic transition at T_C changes from first to second-order between x=0.3 and 0.5. Although the magnetic entropy change decreases from 34.9 to 6.8 J/kg K with increasing Co concentration at a low magnetic field of 0-2 T, the thermal and magnetic hysteresis loss reduces remarkably, which is very important for the magnetic refrigerant near room temperature.     

Kondo lattice behaviour in CePt2(Si1−xSnx)2 alloys

Measurements of electrical resistivity are presented for polycrystalline alloys in the CePt₂(Si_1−xSn_x)₂ system. Results of X-ray diffraction indicate that the tetragonal region of the CePt₂(Si_1−xSn_x)₂ alloy system that is amenable for study only extends up to x=0.3. The resistivity maximum characteristic of a Kondo lattice is observed at a temperature T_max=63 K for the parent compound CePt₂Si₂ and shifts to lower temperatures with increase in Sn content. The compressible Kondo lattice model is applied to describe the results of T_max in terms of the on-site Kondo exchange interaction J and the electron density of states at the Fermi level N(E_F). A value of |JN(E_F)|=0.060±0.009 for the parent compound is obtained from the experimental results.