Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions

A series of exchange-biased magnetic tunneling junctions (MTJs) were made in an in-plane deposition field (h) = 500 Oe. The deposition sequence was Si(1 0 0)/Ta(30 Å)/CoFeB(75 Å)/AlO_x(d Å)/Co(75 Å)/IrMn(90 Å)/Ta(100 Å), where d was varied from 12 Å to 30 Å. The MTJ was formed by the cross-strip method with a junction area of 0.0225 mm². The tunneling magnetoresistance (ΔR/R) of each MTJ was measured. The high-resolution cross-sectional transmission electron microscopic (HR X-TEM) image shows the very smooth interface and clear microstructure. X-ray diffraction (XRD) demonstrates that the IrMn layer of the MTJ exhibits a (1 1 1) texture. From the results (ΔR/R) increases from 17% to 50%, as d increases from 12 Å to 30 Å. The tunneling resistance (R_o) of these junctions ranges from 150 Ω to 250 Ω. The exchange-biasing field (H_ex) of the MTJ is 50-95 Oe. Finally, the saturation resistance (R_s) was measured as a function of the angle (α) of rotation, where α is the angle between h and the in-plane saturation field (H_s) = 1.1 kOe. The following figure presents the dependence of R_s on α, instead of originally expected independence, the curve actually varies with a period of π.     

Doping and temperature dependence of inversion symmetry breaking in La2−xSrxCuO4

The doping dependence of the Raman spectra of high quality La_2−xSr_xCu^16,18O₄ polycrystalline compounds has been investigated at low temperatures. It is shown that symmetry forbidden bands peaked at ∼150 cm⁻¹, ∼280 cm⁻¹, and ∼370 cm⁻¹ are activated in the (xx/yy) polarization Raman spectra due to the local breaking of the inversion symmetry mainly at low temperatures and for doping concentrations for which the compound is superconducting. The apparent A₁-character of the activated modes in the symmetry reduced phase indicates a reduction from the D_2h to C_2v or D₂ crystal symmetries, which associates the observed modes to specific IR-active phonons with eigenvectors mainly along the c-axis. The temperature and doping dependence of this inversion symmetry breaking and the superconducting transition temperature are very similar, though the symmetry reduction occurs at significantly higher temperatures.     

Formation of a cubic Sr2MnWO6 phase at elevated temperature; a neutron powder diffraction study

In a temperature dependent neutron powder diffraction (NPD) study we observed the high temperature cubic phase at 973 K in the polycrystalline double perovskite Sr₂MnWO₆. Rietveld analysis of the NPD data shows that the room temperature tetragonal phase exists up to 573 K (space group P4₂/n, a=8.0119 (4) Å, c=8.0141(8) Å). At 773 K, the primitive tetragonal symmetry change to body-centred tetragonal (space group I4/m, a=5.6935(5) Å, c=8.077(1) Å) and finally at 973 K it becomes face-centred cubic (space group Fm-3m, a=8.0864(8) Å). The changes in the structural symmetry are connected to the small distortion of the B-site octahedra, which are insensitive to the Differential Thermal Analysis (DTA) signal.     

The size and strain effects on the Raman spectra of Ce1−xNdxO2−δ (0≤x≤0.25) nanopowders

Ultrafine Ce_1−xNd_xO_2−δ (x=0-0.25) powders were synthesized by self-propagating room temperature synthesis. Raman spectra were measured at room temperature in the 300-700 cm⁻¹ spectral range. The shift and asymmetric broadening of the Raman F_2g mode at about 454 cm⁻¹ in pure and doped ceria samples could be explained with combined size and inhomogenous strain effects. Increased concentration of O²⁻ vacancies with doping is followed by an appearance of new Raman feature at about 545 cm⁻¹.     

Electronic structure of Cr1−δS (δ=0, 0.17) with NiAs-type crystal structure

Valence-band and conduction-band the electronic structure of the CrS (δ=0) and Cr₅S₆ (δ=0.17) has been investigated by means of photoemission and inverse-photoemission spectroscopies. The bandwidth of the valence bands of Cr₅S₆ (8.5 eV) is wider than that of CrS (8.1 eV), though the Cr 3d partial density of states evaluated from the Cr 3p-3d resonant photoemission spectroscopy is almost unchanged between the two compounds concerning shapes as well as binding energies. The Cr 3d (t_2g) exchange splitting energies of CrS and Cr₅S₆ are determined to be 3.9 and 3.3 eV, respectively.     

FSDP-related correlations in γ-irradiated chalcogenide semiconductor glasses: The case of glassy arsenic trisulphide g-As2S3 revised

Influence of high-energy γ-irradiation on the FSDP in XRD pattern is investigated at the example of g-As₂S₃. Spectroscopic measurements in the fundamental optical absorption edge regions were used to characterize the value of γ-induced changes through the observed darkening effect. It is concluded that γ-irradiation with ~3 MGy dose does not produce any detectable changes in the FSDP parameters, but leads to the appearance of satellite peaks at the left and right sides of the FSDP. Detailed analysis allows attributing of these peaks to crystalline As₂O₃ and S phases, which appear at the surface of g-As₂S₃ after prolonged γ-irradiation. Some correlations with the value of γ-induced optical changes in g-As₂S₃ were detected only for pre-FSDP.     

Synthesis and structure of the monolayer hydrate K0.3CoO2·0.4H2O

The monolayer hydrate (MLH) K_0.3CoO₂·0.4H₂O was synthesized from K_0.6CoO₂ by extracting K⁺ cations using K₂S₂O₈ as an oxidant and the subsequent intercalation of water between the layers of edge-sharing CoO₆ octahedra. A hexagonal structure (space group P6₃/mmc) with lattice parameters a=2.8262(1) Å, c=13.8269(6) Å similar to the MLH Na_0.36CoO₂·0.7H₂O was established using high-resolution synchrotron X-ray powder diffraction data. The K/H₂O layer in the K-MLH is disordered, which is in contrast to the Na-MLH. At low temperatures metallic and paramagnetic behavior was found.     

Stress induced preferred orientation and phase transition for ternary WCxNy thin films

We deposit ternary WC_xN_y thin films on Si (1 0 0) substrates at 500 °C using direct current (DC) reactive magnetron sputtering in a mixture of CH₄/N₂/Ar discharge, and explore the effects of substrate bias (V_b) on the intrinsic stress, preferred orientation and phase transition for the obtained films by virtue of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and selective area electron diffraction (SAED). We find that with increasing the absolute value of V_b up to 200 V the carbon (x) and nitrogen (y) atom concentrations of WC_xN_y films keep almost constant with the values of 0.75 and 0.25, respectively. The XPS and SAED results, combined with the density-functional theory (DFT) calculations on the electronic structure of WC_0.75N_0.25, show our obtained WC_xN_y films are single-phase of carbonitrides. Furthermore, we find that the compressive stress sharply increases with increasing the absolute value of V_b, which leads to a pronounced change in the preferred orientation and phase structure for the film, in which a phase transition from cubic β-WC_xN_y to hexagonal α-WC_xN_y occurs as V_b is in the range of −40 to −120 V. In order to reveal the relationship between the stress and phase transition as well as preferred orientation, the DFT calculations are used to obtain the elastic constants for β-WC_xN_y and α-WC_xN_y. The calculated results show that the preferred orientation is dependent on the competition between strain energy and surface energy, and the phase transition can be attributed to a decrease in the strain energy.     

Spin-glass-like phase behaviour in CeNi2−xCuxSn2

We report the results of our investigation in CeNi_2−xCu_xSn₂ (x=0, 0.4, 1.0, 1.6 and 2.0), a new pseudoternary series with CaBe₂Ge₂-type tetragonal structure. Substitution of Cu for Ni leads to a linear increase in the constants a, c and the unit cell volume v. As probed by the low temperature dependence of ac susceptibility χ_ac(T), the T_f temperature, which corresponds to the freezing temperature of the spin-glass clusters, is annihilated above 2.0 K significantly for the samples with x≥1.6. This observation proves conclusively that the Ni-rich samples in the series CeNi_2−xCu_xSn₂ have the advantage of forming the spin-glass-like state.     

Proximity effect in the finite and incommensurate ferromagnet/superconductor systems

The original theory of a proximity effect is proposed for the bi- and tri-layered system ferromagnetic metal/superconductor (F/S) in dirty limit. The F₁/S/F₂ trilayer is examined more closely. The distinctions in materials, in thicknesses of F layers (d_f1 and d_f2), in parameters interfaces, and in local environments of layers are considered among the causes of incommensurability of trilayer. The peculiar T_c(d_f1, d_f2) interference pattern is predicted for the F₁/S/F₂ systems. The reentrant superconductivity and possibility of the better observability of the spin-valve regime are discussed.     

Ca2BO3Cl:Ce,Eu: A potential tunable yellow-white-blue-emitting phosphors for white light-emitting diodes

Polycrystalline Ca₂BO₃Cl:Ce³⁺,Eu²⁺ phosphors were synthesized by a solid-state reaction and which could display tunable color emission from blue to yellow under an ultraviolet (UV) source by adjusting the ratio of Ce³⁺ and Eu²⁺ appropriately. The mechanism of resonance-type energy transfer from Ce³⁺ to Eu²⁺ was established to be electric dipole-dipole natured, and the critical distance was estimated to be 31 Å based on the spectral overlap and concentration quenching model. A white light was obtained from Ca₂BO₃Cl:0.06Ce³⁺,0.01Eu²⁺ phosphor with chromaticity coordinates (x=0.31, y=0.29) and relative color temperature of 7330 K upon excitation with 360 nm, which is potentially a good candidate as an UV-convertible phosphor for white light-emitting diodes (LEDs).     

Influence of B2O3 to the inhomogeneous broadening and spectroscopic properties of Er/Yb codoped fluorophosphate glasses

In a three-components fluorophosphate glass system, the introduction of H₃BO₃ brings some valuable influence to the spectroscopic and thermal properties of the glasses. With H₃BO₃ increases from 2 to 20 mol%, Ω₆, S_ed4I13/2, FWHM, T_g and fluorescence lifetime change from 3.21×10⁻²⁰ cm², 1.77×10⁻²⁰ cm², 45 nm, 480 °C and 8.8 ms to 4.66×10⁻²⁰ cm², 2.11×10⁻²⁰ cm², 50 nm, 541 °C and 7.4 ms, respectively. σ_abs, σ_emi, FWHM×τ_f×σ_emi has a maximum when H₃BO₃ is 11 mol%. T_g and T_x−T_g increases with H₃BO₃ introduction. Results showed that in fluorophosphate glasses, proper amount of B₂O₃ can be used as a modifier to suppress upconversion and improve spectroscopic properties, broadband property and crystallization stability of the glasses while keeps the fluorescence lifetime relatively high.     

Effect of surface preparation on the properties of Au/p-Cd1−xZnxTe

The effect of bromine methanol (BM) etching and NH₄F/H₂O₂ passivation on the Schottky barrier height between Au contact and semi-insulated (SI) p-Cd_1−xZn_xTe (x ≈ 0.09-0.18) was studied through current-voltage (I-V) and capacitance-voltage (C-V) measurements. Near-infrared (NIR) spectroscopy technique was utilized to determine the Zn concentration. X-ray photoelectron spectroscopy (XPS) for surface composition analysis showed that BM etched sample surface left a Te⁰-rich layer, however, which was oxidized to TeO₂ and the surface [Te]/([Cd] + [Zn]) ratio restored near-stoichiometry after NH₄F/H₂O₂ passivation. According to I-V measurement, barrier height was 0.80 ± 0.02-0.85 ± 0.02 eV for Au/p-Cd_1−xZn_xTe with BM etching, however, it increased to 0.89 ± 0.02-0.93 ± 0.02 eV with NH₄F/H₂O₂ passivation. Correspondingly, it was about 1.34 ± 0.02-1.43 ± 0.02 eV and 1.41 ± 0.02-1.51 ± 0.02 eV by C-V method.     

Spectroscopic investigations of Nd-, Er-, Er/Yb-, and Tm-ions doped SiO2-Al2O3-CaF2-GdF3 glasses

This paper reports on the absorption, visible and near-infrared luminescence properties of Nd³⁺, Er³⁺, Er³⁺/2Yb³⁺, and Tm³⁺ doped oxyfluoride aluminosilicate glasses. From the measured absorption spectra, Judd-Ofelt (J-O) intensity parameters (Ω₂, Ω₄ and Ω₆) have been calculated for all the studied ions. Decay lifetime curves were measured for the visible emissions of Er³⁺ (558 nm, green), and Tm³⁺ (650 and 795 nm), respectively. The near infrared emission spectrum of Nd³⁺ doped glass has shown full width at half maximum (FWHM) around 45 nm (for the ⁴F_3/2→⁴I_9/2 transition), 45 nm (for the ⁴F_3/2→⁴I_11/2 transition), and 60 nm (for the ⁴F_3/2→⁴I_13/2 transition), respectively, with 800 nm laser diode (LD) excitation. For Er³⁺, and Er³⁺/2Yb³⁺ co-doped glasses, the characteristic near infrared emission bands were spectrally centered at 1532 and 1544 nm, respectively, with 980 nm laser diode excitation, exhibiting full width at half maximum around 50 and 90 nm for the erbium ⁴I_13/2→⁴I_15/2 transition. The measured maximum decay times of ⁴I_13/2→⁴I_15/2 transition (at wavelength 1532 and 1544 nm) are about 5.280 and 5.719 ms for 1Er³⁺ and 1Er³⁺/2Yb³⁺ (mol%) co-doped glasses, respectively. The maximum stimulated emission cross sections for ⁴I_13/2→⁴I_15/2 transition of Er³⁺ and Er³⁺/Yb³⁺ are 10.81×10⁻²¹ and 5.723×10^-21 cm². These glasses with better thermal stability, bright visible emissions and broad near-infrared emissions should have potential applications in broadly tunable laser sources, interesting optical luminescent materials and broadband optical amplification at low-loss telecommunication windows.     

Synthesis of Co2N by a simple direct nitriding reaction between nitrogen and cobalt under 10 GPa and 1800 K using diamond anvil cell and YAG laser heating

Synthesis of cobalt nitrides has been tried in a supercritical nitrogen fluid at high pressure (about 10 GPa) and high temperature (about 1800 K) using diamond anvil cell and YAG laser heating system. We have succeeded to synthesize a single phase of the CFe₂-type Co₂N easily in a short time. This is the first synthesis by a simple reaction between the pure cobalt and pure nitrogen (supercritical fluid nitrogen). The cell parameters of the synthesized Co₂N are a=4.662(9) Å, b=4.332(5) Å and c=2.749(9) Å, respectively.     

On a presence of SimHn clusters in a-Si:H/c-Si structures

Dominant aim of the paper was to verify the existence of the Si_mH_n clusters in a-Si:H layers. Thin layers were deposited by plasma-enhanced chemical vapor deposition (PECVD) on both glass and crystalline silicon substrates. Their IR and structural properties were investigated by Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction at grazing incidence angle (XRDGI). We have found that the layer probably consists of larger structurally ordered parts corresponding to Si_mH_n clusters and separated groups of (Si-H_x)_N. The ordered parts could be identified as some of Si_mH_n clusters ranging from (10, 16) to (84, 64) represented by corresponding vibration frequencies in three following IR regions: 600-750, 830-900 and 2080-2180 cm⁻¹. XRDGI measurement indicates that diffraction maximum at around 2Θ = 28° can be attributed to an existing Si_mH_n cluster.     

Spectral analysis of Pr-, Sm- and Dy-doped transparent GeO2-BaO-TiO2 glass ceramics

In this paper, we present the photoluminescence properties of Pr³⁺-, Sm³⁺- and Dy³⁺-doped germanate glasses and glass ceramics. From the X-ray diffraction measurement, the host glass structure was determined. These glasses have shown strong absorption bands in the near-infrared (NIR) region. Compared to Pr³⁺-, Sm³⁺- and Dy³⁺-doped glasses, their respective glass ceramics have shown stronger emissions due to the Ba₂TiGe₂O₈ crystalline phase. For Pr³⁺-doped glass and glass ceramic, emission bands centered at 530 nm (³P₀→³H₅), 614 nm (³P₀→³H₆), 647 nm (³P₀→³F₂) and 686 nm (³P₀→³F₃) have been observed with 485 nm (³H₄→³P₀) excitation wavelength. Of them, 647 nm (³P₀→³F₂) has shown bright red emission. Emission bands of ⁴G_5/2→⁶H_5/2 (565 nm), ⁴G_5/2→⁶H_7/2 (602 nm) and ⁴G_5/2→⁶H_9/2 (648 nm) for the Sm³⁺:glass and glass ceramic, with excitation at ⁶H_5/2→⁴F_7/2 (405 nm) have been recorded. Of them, ⁴G_5/2→⁶H_7/2 (602 nm) has shown a bright orange emission. With regard to the Dy³⁺:glass and glass ceramic, a bright fluorescent yellow emission at 577 nm (⁴F_9/2→⁶H_13/2) has been observed, apart from ⁴F_9/2→⁶H_11/2 (667 nm) emission transition with an excitation at 454 nm (⁶H_15/2→⁴I_15/2) wavelength. The stimulated emission cross-sections of all the emission bands of Pr³⁺, Sm³⁺ and Dy³⁺:glasses and glass ceramics have been computed based on their measured full-width at half-maxima (FWHM, Δλ) and lifetimes (τ_m).     

ESR spectra of Eu centers in defect Ga2S3 single crystals

In this paper, the author presents the results of measurements of the low-temperature and angular dependences of the ESR spectra of Eu²⁺ centers in defect Ga₂S₃ single crystals in the temperature range 8–29 K and for 0–180° orientations of the static magnetic field. The electron structure of impurity ¹⁵¹Eu atoms in Ga₂S₃:Eu single crystals has been studied by using the ESR method at different doping proportions of Eu atoms. Ga₂S₃ single crystals were grown from the melt using the Bridgman method. The Eu concentration was determined by atomic absorption analysis and X–ray fluorescence analysis (XRFA). By investigation on the ESR spectra, the author has first determined the values of charge states for Eu, which have turned out to be a Eu²⁺(4f⁷) ion with spin S=7/2, g=4.18±0.02 and concentration of the states of Eu N=6.3×10¹⁴ cm⁻³.     

Preparation and multi-properties of insulated single-phase BiFeO3 ceramics

Six types of BiFeO₃ ceramic samples, with subtle differences in synthesis conditions, were prepared. The comparison of their phases, electrical resistivity, and porosity revealed that the use of Bi₂O₃ and Fe₂O₃ powders of <1 μm size and a rapid liquid-phase sintering process of 855 °C for 5 min at 100 °C/s is beneficial to synthesize poreless single-phase BiFeO₃ samples with high electrical resistivity of ∼5×10¹² Ω cm. Deoxygenated Bi_xFe_yO_{1.5x+1.5y−δ} (x≠y, δ≥0) impurities were identified and found to be the main cause of low electrical resistivity and high porosity in the multi-phase samples. Large saturation polarization of 16.6 μC/cm² and low leakage current density of 30 mA/m², both at a high electric field of 145 kV/cm, were measured in the optimized single-phase samples at room temperature besides a large piezoelectric d₃₃ coefficient of 27 pC/N and an obvious canted antiferromagnetic behavior.     

Residual surface stress measurements in YBa2Cu3Ox superconductors

XRD and residual surface stress (sin² ψ) measurements were carried out on YBa₂Cu₃O_x superconductors with varying oxygen stoichiometry (6.3 < x < 7.0). Slopes of the surface strain versus sin² ψ were plotted against oxygen content for certain reflections. Compressional surface stress has been found along the c-axis, while a tensile surface stress has been observed along the ab-plane. Both surface stresses were found to vary slightly with oxygen content. These findings qualitatively agree with a very small hydrostatic pressure effect on T_c for fully oxygenated YBa₂Cu₃O_x (x = 7) compared to oxygen deficient material at the surface.