The microwave absorption properties of La0.8Sr0.2Mn1−yFeyO3 nanocrystalline powders in the frequency range 2-18 GHz

La_1−xSr_xMn_1−yFe_yO₃ nanocrystalline powders were prepared by the sol-gel method as a microwave absorption material. The reflectance, the dielectric loss tan δ_e and the magnetic loss tan δ_m of the samples were calculated according to the data of electromagnetism parameters measured by a microwave vector network analyzer in the frequency range 2-18 GHz. The dielectric loss tan δ_e and the magnetic loss tan δ_m had a step-change at a certain frequency so that the superiority of dielectric loss change into the superiority of magnetic loss, which indicated that anti-ferromagnetic clusters in the material change into ferromagnetic clusters by absorbing quantum of microwave electromagnetic field when the frequency of incident microwave reaches a certain value. The effective absorption bandwidth higher than 10 dB reached 6.2 GHz. As a result, the La_0.8Sr_0.2Mn_1−yFe_yO₃ has shown useful applications as a microwave absorption material.     

Effect of illumination on magnetization and microwave absorption of La1−xCaxMnO3 (x<0.2) films

Light-induced changes of the hysteresis loops of magnetization and microwave absorption are investigated in low-doped La_1−xCa_xMnO₃ (x<0.2) thin films. The width of the hysteresis loops decreases clearly under illumination with visible or near-infrared light at temperatures below 50 K. The microwave conductivity has a minimum value at magnetic fields corresponding to the magnetization reversal and is shifted towards weaker fields under illumination. These effects show complex nonexponential time evolution and dependence on strength of the magnetic field. The results can be explained by assuming that small ferromagnetic metallic regions exist within the insulating ferromagnetic phase of the sample, and that these regions are expanded by optically induced charge transfer between Jahn–Teller split e_g states of neighboring Mn³⁺ ions. Decrease of the Mn³⁺ XPS core level spectrum is observed in the samples under illumination with a HeNe laser.     

Densification, microstructural evolution, and dielectric properties of CaTiO3-LaGaO3 microwave ceramics

The relations among the densification, microstructural evolution, and microwave dielectric properties of the (1−x)CaTiO₃-xLaGaO₃ ceramics with x=0.34 and 0.36 were investigated in this study. The results indicated that (1−x)CaTiO₃−xLaGaO₃ ceramics can be densified at 1300 °C with at least 97% of the theoretical value. The ceramics reported an orthorhombic perovskite structure, and no other detectable phases were found. Both ε_r and Q×f values can be improved by slowing the cooling rate during sintering. The ε_r and Q×f values of the 0.64CaTiO₃-0.36LaGaO₃ ceramics at cooling rates of >10 °C/min and 0.1 °C/min are 48.1 and 27,500 and 48.7 and 38,000, respectively. The higher densification obtained at a slower cooling rate plays an important role in improving the microwave dielectric properties.     

Yafet-Kittel-type magnetic ordering in Ni0.35Zn0.65Fe2O4 ferrite detected by magnetosensitive microwave absorption measurements

Magnetosensitive microwave absorption measurements of polycrystalline ferrite Ni_0.35Zn_0.65Fe₂O₄ was carried out at 9.4 GHz (X-band) as a function of temperature. Temperature dependence of the total linewidth (ΔH_pp) deduced from the resonance spectra showed the passage through the Curie point (T_c~430 K). Additionally, the plot ΔH_pp vs. T also indicated the existence of another magnetic phase transition at ~240 K, which can be associated with a Yafet-Kittel-type canting of the magnetic moments. Low-field microwave absorption (LFMA) and the magnetically modulated microwave absorption spectroscopy (MAMMAS) were used to give a further knowledge on this material. For low temperature, these techniques give evidence of a Yafet-Kittel-type canting of the magnetic moments.     

Microwave solid synthesis and electrical properties of Aurivillius-type oxide-ion conductor

A new oxide-ion conductor of Aurivillius-type structure, namely BISRVOX (Bi₂Sr_xV_1−xO_{5.5-(3x/2)-δ}, 0≤x≤0.20), was successively synthesized by the microwave-assisted solid state reaction. 25 min of microwave irradiation was found to be quite sufficient to ensure the completion of reaction. Powder X-ray diffraction and differential thermal analysis showed better structural properties for the microwave-prepared samples compared to those obtained from the conventional solid synthesis route. Interestingly, the highly conducting γ-phase was effectively stabilized for x≥0.10. AC impedance spectroscopy evidenced the superiority of the microwave heating over conventional solid synthesis routes in exhibiting high oxide-ion performance.     

Low-temperature sintering and microwave dielectric properties of Ca2Zn4Ti15O36 ceramics

The sintering behavior, microstructures, and microwave dielectric properties of Ca₂Zn₄Ti₁₅O₃₆ ceramics with B₂O₃ addition were investigated. The crystalline phases and microstructures of Ca₂Zn₄Ti₁₅O₃₆ ceramics with 0-10 wt% B₂O₃ addition were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS). The sintering temperature of Ca₂Zn₄Ti₁₅O₃₆ ceramic was lowered from 1170 to 930 °C by 10 wt% B₂O₃ addition. Ca₂Zn₄Ti₁₅O₃₆ ceramics with 8 wt% B₂O₃ addition sintered at 990 °C for 2 h exhibited good microwave dielectric properties, i.e., a quality factor (Qf) 11,400 GHz, a relative dielectric constant (ε_r) 41.5, and a temperature coefficient of resonant frequency (τ_f) 94.4 ppm/°C.     

Numerical studies on wakefield excited by Gaussian-like microwave pulse in a plasma filled waveguide

Based on a differential equation derived analytically in terms of wakefield potential ?_MW in a plasma filled rectangular waveguide, we investigate the wakefield (E_MW) generated with the help of Gaussian-like microwave pulse under the effect of microwave frequency (f), pulse duration (τ), waveguide width (b), equilibrium plasma density (n₀) and microwave intensity (I). The study conducted for three cases of τ > 1/f_p, τ = 1/f_p and τ < 1/f_p, where f_p is the plasma frequency, reveals that the amplitude of the wakefield is increased for the large pulse duration and higher microwave intensity but is decreased with the waveguide width and microwave frequency for all these cases. The wakefield shows stronger dependence on the microwave frequency when the microwave with larger intensity is used. The wakefield decreases at a faster rate with the waveguide width for the case of τ > 1/f_p.     

Line patterning with large refractive index changes in the deep inside of glass by nanosecond pulsed YAG laser irradiation

Nanosecond (∼100 ns) pulsed (10 Hz) Nd:YAG laser operating at the wavelength (λ) of 1064 nm with pulse energies of 0.16-1.24 mJ/cm² has irradiated 10Sm₂O₃·40BaO·50B₂O₃ glass. It is demonstrated for the first time that the structural modification resulting the large decease (∼3.5%) in the refractive index is induced by the irradiation of YAG laser with λ=1064 nm. The lines with refractive index changes are written in the deep inside of 100-1000 μm depths by scanning laser. The line width is 1-13 μm, depending on laser pulse energy and focused beam position. It is proposed that the samarium atom heat processing is a novel technique for inducing structural modification (refractive index change) in the deep interior of glass.     

Spin-deposited nanocrystalline lithium ferrite thin films: Fabrication and characterization

Thin films of lithium ferrite (with general composition Li_0.5Fe_2.5O₄) were fabricated at low temperatures (up to 650 °C) by citrate-route using spin-deposition technique. Deposited films consisted of nanometer-sized grains as evidenced by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. XRD patterns for annealed films showed broad peaks exhibiting a spinel phase. Size of nanocrystallites is estimated to be 3-7 nm using Scherrer's equation. Average grain size ∼8.5 nm is observed from TEM images of films annealed at 650 °C. Scanning electron micrographs show the formation of spherical aggregates of around 130 nm in diameter. The AFM analysis clearly evidenced the development of nanograins even at low (∼500 °C) annealing temperatures. Significant decrease in complex dielectric permittivity (∈′ − j∈″) with frequency is observed in the low frequency (100 Hz-1 MHz) as well as in X-band microwave frequency (8-12 GHz) region. ∈′ is found to be in the range of 15.7-33.9 in low frequency region, whereas in X-band microwave frequency region, it is found to lie between 3.9 and 4.9. Similarly, ∈″ is found to be 0.16-5.9 in the low frequency region, and 0.002-0.024 in the X-band microwave frequency region. Room temperature dc resistivity of these films is estimated to lie in the range of 10⁶-10⁸ Ω cm. These results strongly suggest that citrate-route processed nanocrystalline lithium ferrite thin films are promising candidates for monolithic microwave integrated circuits (MMICs).     

Magnetic properties of xNi0.53Cu0.12Zn0.35Fe1.88O4+(1−x)BaTiO3 nanocomposites

The nanocrystalline Ni_0.53Cu_0.12Zn_0.35Fe_1.88O₄ and BaTiO₃ powders were prepared using Microwave-Hydrothermal (M-H) method at 160 °C/45 min. The as synthesized powders were characterized using the X-ray diffraction (XRD) and Transmission Electron Microscope (TEM). The size of the powders that were synthesized using M-H system was found to be ∼30 and ∼50 nm for ferrite phase and ferroelectric phases, respectively. The powders were densified using microwave sintering method at 900 °C/30 min. The ferrite and ferroelectric phases were observed from XRD and morphology of the composites was observed with the Scanning Electron Microscope (SEM).The magnetic hysteresis loops were recorded using the Vibrating Sample Magnetometer (VSM).The frequency dependence of real (μ′) and imaginary (μ″) parts of permeability was measured in the range of 1 MHz-1.8 GHz. The permeability decreases with an increase of BaTiO₃ content at 1 MHz. The transition temperature (T_C) of ferrite was found to be 245 °C. The T_C of composite materials decreases with an increase in BaTiO₃ content.     

VPO catalysts synthesized on substrates with modified activated carbons

VPO catalysts were prepared on oxidized and unoxidized activated carbons differing in initial porous structure. Carbons were oxidized under relatively soft (30% H₂O₂, 200 °C) and hard (50% H₂O₂, 350 °C) conditions. Carbon modification was carried out hydrothermally in a traditional autoclave (HTT) or a microwave reactor (MWT). The synthesis was also carried out under hydrothermal (HTS or MWS) conditions. V₂O₅ and NH₄VO₃ were used as precursors. The samples are characterized by diversified porous structure at S_BET = 732-1617 m²/g and V_por = 0.44-0.90 cm³/g, as well as various degree of VPO crystallinity. Possibility of preparation of the VPO catalysts under ecologically appropriate conditions, i.e. in aqueous solutions, was shown.     

Magnetic domain structure in Fe78.8−xCoxCu0.6Nb2.6Si9B9 nanocrystalline alloys studied by Lorentz microscopy

The magnetic domain structures of Fe_78.8−xCo_xCu_0.6Nb_2.6Si₉B₉ (x=0, 20, 40, 60) alloys are investigated by Lorentz microscopy coupled with the focused ion beam method. The specimen prepared using the FIB method is found to have a considerably more uniform thickness compared to that prepared using the ion-milling method. In Fe_38.8Co₄₀Cu_0.6Nb_2.6Si₉B₉ and Fe_18.8Co₆₀Cu_0.6Nb_2.6Si₉B₉ alloys, 180° domain walls extending in the direction of the induced magnetic anisotropy are observed. Analysis with Lorentz microscopy reveals that the width of the magnetic domains decreases with an increase in the cobalt content or the induced magnetic anisotropy K_u, that is, the domain width d is proportional to the induced magnetic anisotropy (K_u)^−1/4. On the other hand, in the in situ Lorentz microscopy observation as a function of temperature, magnetic ripple structures are found to appear in a localized area due to the fluctuation of magnetization vectors from 423 K. It is observed that the induced magnetic anisotropy caused by the applied magnetic field at 803 K is not suppressed by the magnetic ripple structures observed at 423–443 K.     

Oxidation of a cesium-covered Ni (1 1 0) surface studied by metastable-induced electron spectroscopy

An initial stage of oxidation of a cesium-covered Ni (1 1 0) surface has been studied by metastable-induced electron spectroscopy (MIES) and low-energy electron diffraction (LEED). The MIES brought spectra with Cs 6s induced peak (P_6s), Cs 5p (P_5p), O 2p induced peak (P_ox) and a structure related to the substrate Ni 3d states (P_3d). The work function change Δφ showed an oscillatory behavior in the progress of surface oxidation. The process is divided into three stages: (i) at low O₂ exposures, Δφ > 0 with unchanging P_5p and P_6s; (ii) at moderate exposures, Δφ < 0 with a drastic decrease in the P_6s intensity; (iii) at higher exposures, Δφ > 0 with shifts of peaks P_5p and P_ox to higher energies, together with an appearance of peak P_3d. A three-step model of initial oxidation of alkali-covered Ni (1 1 0) surfaces is presented.     

Ruthenium adsorption and diffusion on the GaN(0 0 0 1) surface

We report first principles calculations to analyze the ruthenium adsorption and diffusion on GaN(0 0 0 1) surface in a 2×2geometry. The calculations were performed using the generalized gradient approximation (GGA) with ultrasoft pseudopotential within the density functional theory (DFT). The surface is modeled using the repeated slabs approach. To study the most favorable ruthenium adsorption model we considered T₁, T₄ and H₃ special sites. We find that the most energetically favorable structure corresponds to the Ru- T₄ model or the ruthenium adatom located at the T₄ site, while the ruthenium adsorption on top of a gallium atom (T₁ position) is totally unfavorable. The ruthenium diffusion on surface shows an energy barrier of 0.612 eV. The resultant reconstruction of the ruthenium adsorption on GaN(0 0 0 1)- 2×2 surface presents a lateral relaxation of some hundredth of Å in the most stable site. The comparison of the density of states and band structure of the GaN(0 0 0 1) surface without ruthenium adatom and with ruthenium adatom is analyzed in detail.     

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR-CVD plasma

In this paper we have developed a passivation technique with silicon-nitride (SiN_X) film that requires no surface pre-treatment, and is fully compatible to monolithic microwave integrated circuits (MMICs). The nitride depositions were carried out by ECR-CVD (electron cyclotron resonance-chemical vapor deposition) directly over InGaP/GaAs heterojunction structures, which are used for heterojunction bipolar transistors (HBTs). Optical emission spectrometry (OES) was used for plasma characterization, and low formation of H and NH molecules in the gas phase was detected at pressure of 2.5 mTorr. These molecules can degrade III-V semiconductor surfaces due to the preferential loss of As or P and hydrogen incorporation at the substrate. The substrates were cleaned with organic solvents using a Sox-let distillate. The ECR depositions were carried out at a fixed substrate temperature of 20 °C, SiH₄/N₂ flow ratio of 1, Ar flow of 5 sccm pressure of 2.5 mTorr and microwave (2.45 GHz) power of 250 W and RF (13.56 MHz) power of 4 W. We have applied this film for InGaP/GaAs HBT fabrication process with excellent results, where two major contribuiton is related to this passivation technique, the enhancement in the transistor dc gain β and the improvement in the signal-to-noise ratio when compared unpassivated and passivated devices.     

Microwave spectroscopy of novel superconductors

A hollow dielectric resonator technique has been developed for accurate measurements of the complex microwave surface impedance of novel superconductors from 2 to 20 GHz down to 100 mK. Illustrative measurements of the antiferromagnetic ordering and spin-dynamics of Gd ions in GdBa₂Cu₃O₇ and of microwave penetration and losses in MgB₂ wires and high quality single crystals of Sr₂RuO₄ are presented. Measurements on Sr₂RuO₄ imply an unchanged electron relaxation time τ on entering the superconducting state, a power law temperature dependence of the normal state fraction implying nodes in the superconducting order parameter, and residual low temperature losses on increasing frequency.     

Quantum interference effects in a multi-driven transition Fg = 3 ↔ Fe = 2

We calculated and studied the quantum coherence effects of a degenerate transition F_g = 3 ↔ F_e = 2 system interacting with a weak linearly polarized (with σ_± components) probe light and a strong linearly polarized (with σ_± components) coupling field. Due to the competition between the drive Rabi frequency and the Zeeman splitting, electromagnetically induced transparency (EIT) and electromagnetically induced absorption (EIA) are appeared at the different values of applied magnetic field in both cases that the Zeeman splitting of excited state Δe is smaller than the Zeeman splitting of ground state Δg (i.e., Δe < Δg) and Δe > Δg. It is shown that the resonance is broader and contrasts are higher for Δe < Δg than that for Δe > Δg at the same Rabi frequencies of probe and coupling fields.     

Influence of annealing temperature on structural, optical and magnetic properties of Mn-doped ZnO thin films prepared by sol-gel method

Thin films of Zn_1−xMn_xO (x=0.01) diluted magnetic semiconductor were prepared on Si (1 0 0) substrates by the sol-gel method. The influence of annealing temperature on the structural, optical and magnetic properties was studied by X-ray diffraction (XRD), atom force microscopy (AFM), photoluminescence (PL) and SQUID magnetometer (MPMS, Quantum Design). The XRD spectrum shows that all the films are single crystalline with (0 0 2) preferential orientation along c-axis, indicating there are not any secondary phases. The atomic force microscopy images show the surfaces morphologies change greatly with an increase in annealing temperature. PL spectra reveal that the films marginally shift the near band-edge (NBE) position due to stress. The magnetic measurements of the films using SQUID clearly indicate the room temperature ferromagnetic behavior, and the Curie temperature of the samples is above room temperature. X-ray photoelectron spectroscopy (XPS) patterns suggest that Mn²⁺ ions were successfully incorporated into the lattice position of Zn²⁺ ions in ZnO host. It is also found that the post-annealing treatment can affect the ferromagnetic behavior of the films effectively.     

Microwave-absorbing properties of NiCoZn spinel ferrites

In this paper, the microwave-absorbing properties of (Ni_1−x−yCo_xZn_y)Fe₂O₄ spinel ferrites have been investigated within the frequency range of 0.5–14 GHz. There are two kinds of resonance peaks observed in the permeability spectra: domain-wall resonances at lower frequency and spin-rotation resonances at higher frequency. The reflection loss (RL) calculations show that the prepared NiCoZn spinel ferrites are good electromagnetic (EM) wave absorbers in microwave range. In terms of the absorbing frequency band (AFB) and the matching thickness (t_m), (Ni_0.407Co_0.207Zn_0.386)Fe₂O₄ shows the best performances: t_m=3.15 mm and the AFB is 8.64–11.2 GHz. Decreasing the weight ratio of NiCoZn ferrites in ferrites/wax composites, the matching thickness decreases and the AFB shifts to higher frequencies. Compared with the absorbers with single-layer ferrites, the absorbers with double-layers ferrites have better absorbing performances, such as a thinner matching thickness and a wider EM wave AFB.     

Intrinsic coercivities of molecular beam epitaxy grown single-crystal Ni films on Ag buffer layer

Single-crystal Ni films were made by the molecular beam epitaxy (MBE) method on Si(1 0 0) and Si(1 1 0) substrates, respectively, with an 100 Å thick Ag buffer layer. The growth temperature T_S was 270 °C, and the film thickness t was 500 Å. From reflection high-energy electron diffraction (RHEED) patterns, the crystalline symmetries of the two films are clear and as expected. Intrinsic coercivities, H_C(1 0 0) and H_C(1 1 0), are plotted as a function of the angle of rotation ? around the crystal axes [1 0 0] and [1 1 0], respectively. The results show that both H_C(1 0 0) and H_C(1 1 0) exhibit mixed features of the crystalline (K_C) and the induced uniaxial magnetic (K_u) anisotropies. K_u is the magneto-elastic energy, due to lattice mismatch at the Ni/Ag interface. Moreover, the crystalline anisotropy fields, H_K(1 0 0) and H_K(1 1 0), and the induced anisotropy filed, H_u, can be calculated as a function of ?, respectively. Then, each H_C curve is fitted by the equation: H_C = H_o + H_K + H_u, where H_o is the isotropic pinning field. Meanwhile, domain structures were examined by the Bitter method, using Ferrofluid 707. On the Ni(1 0 0) film, we observed the charged cross-tie walls, and on the Ni(1 1 0) film, the un-charged Bloch walls.