Energy transfer among three luminescent centers in full-color emitting ZnGa2O4:Mn, Cr phosphors

The ZnGa₂O₄:Mn²⁺, Cr³⁺ phosphors show three colors; the blue band of 380 nm from the charge transfer between Ga-O, the green band of 505 nm from Mn²⁺ and the red band of 705 nm from Cr³⁺. As a variation of Mn²⁺ or Cr³⁺ concentrations in ZnGa₂O₄:Mn²⁺, Cr³⁺, the relative emission intensity can be tuned. This phenomenon is explained in terms of the energy transfer based on four factors: the spectral overlap between the energy donors (Ga-O) and the energy accepters of Mn²⁺ or Cr³⁺, the absorption cross section of the energy accepters, the distance between them, and the decay time of the energy donors. ZnGa₂O₄:0.0025Mn²⁺, 0.010Cr³⁺ shows the CIE coordinates of x=0.4014, y=0.3368, which is a pure white light. The single-phased full-color emitting ZnGa₂O₄:Mn²⁺, Cr³⁺ phosphors can be applied to illumination devices.     

Cathode luminescence characteristics of ZnGa2O4 phosphor thin films with the doped activator

The zincgallate (ZnGa₂O₄) phosphor thin film was grown using RF magnetron sputtering system at various process parameters. A ZnGa₂O₄ phosphor thin film was deposited on Si(1 0 0) substrate and annealed by a rapid thermal processor (RTP). The X-ray diffractometer (XRD) patterns indicate that the Mn-doped ZnGa₂O₄ phosphor thin film shows a (3 1 1) main peak and a spinel phase. A ZnGa₂O₄ phosphor thin film has better crystallization due to increased substrate, annealing temperature and deposition time. Also the ZnGa₂O₄:Mn phosphor thin film shows green emission (510 nm, ⁴T₁→⁶A₁), and the ZnGa₂O₄:Cr phosphor thin film shows red emission (705 nm, ⁴A₂→⁴T₂).     

First applicability of ZnGa2O4 : Ge, Li, Mn phosphor for a plasma display panel

The green emission intensity of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ excited by the vacuum ultraviolet line of 147 nm reaches 70% of commercial green Zn₂SiO₄:Mn²⁺. The vacuum ultraviolet excitation spectra consist of four peaks. In a plasma display test bed filled with Ar and Ne plasma discharged by a radio-frequency generator of 13.6 MHz, ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ and commercial Zn₂SiO₄:Mn²⁺ phosphor screens show a linear increase in luminance with increasing self bias voltages. Increasing gas pressures cause the luminance to increase. Also, on increasing the self bias voltages and the gas pressures, the current densities of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphor screens are increased; this is the same behavior as that of the commercial phosphor.     

Luminescence enhancement of ZnGa2O4:Mn by Ge and Li doping

Structural and optical properties of ZnGa₂O₄:Ge⁴⁺ and ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors were investigated by using X-ray diffraction (XRD), photoluminescence (PL) and cathodoluminescence (CL) measurements. The XRD patterns show that Ge-doped ZnGa₂O₄ has a spinel phase and its lattice constant increases with respect to ZnGa₂O₄. Emission wavelength shifts from 400 to 360 nm in comparison with ZnGa₂O₄ when Ge is doped in ZnGa₂O₄ and a peak related with oxygen defect was observed in Ge-doped ZnGa₂O₄. The CL luminance of ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors is seven times brighter than that of ZnGa₂O₄:Mn²⁺. This drastic luminance improvement can be attributed to Ge doping in ZnGa₂O₄ acting as donor ion and Li doping resulting in increasing conductivity of ZnGa₂O₄. These results indicate that ZnGa₂O₄:Ge⁴⁺, Li⁺, Mn²⁺ phosphors hold promise for potential applications in field-emission display devices with high brightness operating in green spectral regions.     

Characterization of ZnGa2O4:Mn nanophosphor synthesized by the solvothermal method in 1,4-butanediol-water system

We characterized ZnGa₂O₄:Mn²⁺ (ZnGa₂O₄—zinc gallate) nanophosphor synthesized by the solvothermal method in 1,4-butanediol-containing water to increase the amount of Mn²⁺ ions incorporated in the ZnGa₂O₄ matrix without post-heat treatment. We investigated the influence of water content in the solvent on the photoluminescence (PL) intensity and the Mn amount, the latter being measured by X-ray fluorescence analysis and electron paramagnetic resonance spectroscopy. The PL intensity per Mn amount reached the maximum at the 50 wt% water content. The addition of water promotes repeated dissolution and precipitation, resulting in homogeneous Mn²⁺ distribution in the ZnGa₂O₄ matrix. This suggests that the solvothermal method in the 1,4-butanediol-water system is useful for increasing the amount of Mn²⁺ ions incorporated in the ZnGa₂O₄ matrix without post-heat treatment. At the water content >50 wt%, the decrease in PL intensity is attributed to the optical absorption of the by-product, MnOOH.     

The origin of emission color of reduced and oxidized ZnGa2O4 phosphors

The Ga-O octahedral structure of the reduced and the oxidized ZnGa₂O₄ phosphors was investigated using Reitveld refinement. The correlation between the structural change and the changing emission color was studied. The emission peak shifts to shorter wavelength because of the more contribution of a variation of ligand charge than that of bond length to crystal field. The blueshift behavior of the reduced ZnGa₂O₄ was also observed in Ge⁴⁺-doped ZnGa₂O₄. In addition, Li⁺ ions doping in ZnGa₂O₄ generate extra oxygen ions, and Li⁺-doped ZnGa₂O₄ shows the same emission color as the oxidized ZnGa₂O₄.     

Preparation and optical properties of ZnGa2O4:Cr thin films derived by sol-gel process

ZnGa₂O₄:Cr³⁺ thin films with bright red emission were synthesized using a sol-gel process, characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and UV-vis and fluorescence spectrophotometry measurements. Effects of calcining temperature, film thickness, calcining duration and substrates on the crystal structure and photoluminescent property have been investigated. It is found that the crystallinity, Ga/Zn ratio and band gap energy (E_g) are significant factors influencing optical characteristics, while the nature of substrates affect the surface morphologies of ZnGa₂O₄:Cr³⁺ thin films.     

EPR, luminescence and IR studies of Mn activated ZnGa2O4 phosphor

Electron paramagnetic resonance (EPR), luminescence and infrared spectra of Mn²⁺ ions doped in zinc gallate (ZnGa₂O₄) powder phosphor have been studied. The EPR spectra have been recorded for zinc gallate phosphor doped with different concentrations of Mn²⁺ ions. The EPR spectra exhibit characteristic spectrum of Mn²⁺ ions (S=I=5/2) with a sextet hyperfine pattern, centered at g_eff=2.00. At higher concentrations of Mn²⁺ ions, the intensity of the resonance signals decreases. The number of spins participating in the resonance has been measured as a function of temperature and the activation energy (E_a) is calculated. The EPR spectra of ZnGa₂O₄: Mn²⁺ have been recorded at various temperatures. From the EPR data, the paramagnetic susceptibility (χ) at various temperatures, the Curie constant (C) and the Curie temperature (θ) have been evaluated. The emission spectrum of ZnGa₂O₄: Mn²⁺ (0.08 mol%) exhibits two bands centered at 468 and 502 nm. The band observed at 502 nm is attributed to ⁴T₁→⁶A₁ transition of Mn²⁺ ions. The band observed at 468 nm is attributed to the trap-state transitions. The excitation spectrum exhibits two bands centered at 228 and 280 nm. The strong band at 228 nm is attributed to host-lattice absorption and the weak band at 280 nm is attributed to the charge-transfer absorption or d⁵→d⁴s transition band. The observed bands in the FT-IR spectrum are assigned to the stretching vibrations of M-O groups at octahedral and tetrahedral sites.     

Mn, Cr-co-doped MgAl2O4 phosphors for white LEDs

The Mn-, Cr-doped and Mn, Cr-co-doped MgAl₂O₄ powders have been synthesized via a gel-solid reaction method. Energy transfer from Mn²⁺ to Cr³⁺ has been observed for the first time in the co-doped MgAl₂O₄ phosphors. When excited with blue light with a wavelength of 450 nm at room temperature, both green emission from Mn²⁺ around 520 nm and red emission from Cr³⁺ around 675and 693 nm were generated. Moreover, the color of the emission can be modified by controlling the doping concentrations of Mn²⁺ and Cr³⁺. Therefore, MgAl₂O₄: Mn²⁺, Cr³⁺ could be used as a single-phased phosphor for white LED with a blue LED chip. The energy transfer in terms of Mn²⁺ to Cr³⁺ is determined by means of radiation and reabsorption.     

Green-emissive transparent BaSi2O5:Eu film phosphor on quartz glass created by a sputtering thermal diffusion process

Eu²⁺-doped BaSi₂O₅ film phosphors on quartz substrates are fabricated by radio-frequency magnetron sputtering thermal diffusion. The BaSi₂O₅: Eu²⁺ phosphor crystals have some preferred orientations that are lattice-spacing matched with the crystallized β- SiO₂ crystals, and they show pore and grain boundary-free morphology with a rod-like shape fused into the crystallized β- SiO₂ crystals. The BaSi₂O₅: Eu²⁺ film phosphor has a high transparency, with a transmittance of about 30% in visible light. The BaSi₂O₅: Eu²⁺ film phosphor shows 510 nm green emission from the f–d transition of the Eu²⁺ ions, and in particular the best sample shows a green photoluminescence brightness of about 5% of a BaSi₂O₅: Eu²⁺ powder phosphor screen. These excellences in optical properties can be explained by less optical scattering at pores or grain boundaries, and less reflection at the continuously index-changed interface.     

Effect of Sr substitution on photoluminescent properties of BaAl2O4:Eu, Dy

Phosphor material BaAl₂O₄:Eu²⁺, Dy³⁺ with varying compositions of Sr substitution were prepared by the solid-state synthesis method. The phosphor compositions were characterized for their phase and crystallinity by XRD, SEM and TEM. Photoluminescence (PL) properties were investigated measuring PL and decay time for varying Ba/Sr compositions. The PL results show the blue shift in the luminescence properties in Sr substituted BaAl₂O₄:Eu²⁺, Dy³⁺ compared to parent BaAl₂O₄:Eu²⁺, Dy³⁺. It is probably due to the influence of 5d electron states of Eu²⁺ in the crystal field because of atomic size variation causing crystal defects. Dy³⁺ ion doping in the phosphor generates deep traps, which results in long afterglow phosphorescence.     

Synthesis and properties of colloidal ternary ZnGa2O4:Eu nanocrystals

A nonhydrolytic hot solution synthesis technique was used to grow monodisperse ternary oxide nanocrystals of ZnGa₂O₄:Eu³⁺. The shape of ZnGa₂O₄:Eu³⁺ nanocrystals was a function of the type of precursor, and their size was controlled by changing the concentration ratio of Zn precursor to surfactant. The crystal structure of synthesized ZnGa₂O₄ nanocrystals was a cubic spinel with no detectable secondary phases. Photoluminescence of red-emitting ZnGa₂O₄:Eu³⁺ nanocrystals resulted in a high (⁵D₀-⁷F₂)/(⁵D₀-⁷F₁) intensity ratio, suggesting that the Eu³⁺ ions occupy tetrahedral Zn²⁺ sites or distorted octahedral Ga³⁺ sites with no inversion symmetry in ZnGa₂O₄ nanocrystals.     

High luminance of new green emitting phosphor, Mg2SnO4:Mn

Mg₂SnO₄, which has an inverse spinel structure, was adopted as the host material of a new green emitting phosphor. Luminescence properties of the manganese-doped magnesium tin oxide prepared by the solid state reaction were investigated under vacuum ultraviolet (VUV) ray and low-voltage electron excitation. The Mg₂SnO₄:Mn phosphor exhibited green luminescence with the emission spectrum centered at 500 nm due to spin flip transition of the d-orbital electron associated with the Mn²⁺ ion. Optimum Mn concentration of Mg₂SnO₄:Mn under VUV excitation with 147 nm wavelength and electron beam excitation with 800 V excitation voltage are 0.25 and 0.6 mol%, respectively. The emission intensities of Mg₂SnO₄:Mn phosphors under the two excitation sources are higher than those of Zn₂SiO₄:Mn and ZnGa₂O₄:Mn phosphors. At 0.25 mol% of Mn concentration, on the other hand, the decay time is shorter than 10 ms.     

Photoluminescence and gamma-ray irradiation of SrAl2O4:Euand Y2O3:Eu phosphors

Y₂O₃:Eu³⁺ phosphor is a very attractive material for use as a red phosphor in many fields. SrAl₂O₄:Eu²⁺ belongs to long lasting phosphor (LLP) and it is a useful bluish-green luminescence material, which can also be a promising candidate as a simple and easy-to-use radiation detection element for visual display of two dimensional radiation distributions. In the present study, both these two kinds of phosphors were synthesized using high temperature solid state reactions. In our work, the influence of gamma-ray irradiation on the properties of these two kinds of phosphors was studied by comparing photoluminescence, brightness and the decay curve of unirradiated and gamma-ray-irradiated samples. Conclusions from the present work can be briefly summarized as follows. In irradiated samples, the brightness is decreased without sensible change in the wavelength distribution of the luminescence spectrum and in the decay kinetic upon gamma exposure. Moreover, the emission due to Eu³⁺→Eu²⁺ conversion in Y₂O₃:Eu³⁺ phosphors was not observed in our sample after irradiation to high exposure. Also the brightness of SrAl₂O₄:Eu²⁺ phosphor turned out to decrease after the exposition to ionizing radiation while the luminescence wavelength distribution remained unchanged. The reason for the effect of gamma-ray irradiation on the properties of phosphors is also discussed in the paper.     

Photoluminescence of Y2O3:Eu thin film phosphors by sol-gel deposition and rapid thermal annealing

Y₂O₃:Eu³⁺ phosphor films have been developed by using the sol-gel process. Comprehensive characterization methods such as Photoluminescent (PL) spectroscopy, X-ray diffraction (XRD) and Fourier Transform Infrared (FTIR) spectroscopy were used to characterize the Y₂O₃:Eu³⁺ phosphor films. In this experiment, the XRD profiles show that the Y₂O₃:Eu³⁺ phosphor films crystallization temperature and optimum annealing temperature occur at about 650 and 750 °C, respectively. The optimum dopant concentration is 12 mol% Eu³⁺ and the critical transfer distance (R_c) among Eu³⁺ ions is calculated to be about 0.84 nm. Vacuum environment is more efficient than oxygen and nitrogen to eliminate the OH content and hence yields higher luminescent phosphor films. The PL emission intensity of Y₂O₃:Eu³⁺ phosphor films is also dependent on the annealing time. It was found that the H₂O impurities were effectively eliminated after annealing time of 25 s at 750 °C in vacuum environment. From the experiment results, the schematic energy band diagram of Y₂O₃:Eu³⁺ phosphor films is constructed.     

Sm共掺对Sr4Al14O25:M (M=Mn4+, Cr3+）荧光粉发光性能的影响

用固相反应法合成了Sr₄Al₁₄O₂₅:M和Sr₄Al₁₄O₂₅:(M+Sm³⁺)(M=Mn⁴⁺, Cr³⁺)荧光粉, 研究了其发光性能．Sm的共掺并没有改变Sr₄Al₁₄O₂₅:Cr³⁺激发带和发射带的位置, 但是显著提高了材料的发光性能;Sm共掺Sr₄Al₁₄O₂₅:Mn⁴⁺反而降低了发光强度． 对于Cr³⁺, Sm³⁺共掺的Sr₄Al₁₄O₂₅荧光粉, 呈现了从Sm³⁺到Cr³⁺ 的辐射形式的能量传递过程,说明了Sm的共掺对于Sr₄Al₁₄O₂₅:Cr³⁺荧光粉的发光强度提高的原因．     

Structure and surface characterization of ZrO2-Y2O3-Cr2O3 system

3-mol% Y₂O₃ and 0.3 to 3-mol % Cr₂O₃ co-doped ZrO₂ nanopowders were synthesized using co-precipitation technique and investigated by terms of X-ray diffraction, transmission electron microscopy and X-ray photoelectron spectroscopy. Structural analysis shows no significant impact of chromium on powders structure except of presence of small amount of m-phase. Surface analysis reveals segregation of yttrium and chromium atoms to the surface along with surface enrichment by oxygen that can be attributed to residual water. Chromium surface atoms present in three oxidation states with catalytically active Cr²⁺ sites possibly controlling m-phase appearance through lattice distortion.     

Synthesis of Gd2Ti2O7:Eu, V phosphors by sol-gel process and its luminescent properties

A red-emitting phosphor material, Gd₂Ti₂O₇:Eu³⁺, V⁴⁺, by added vanadium ions is synthesized using the sol-gel method. Phosphor characterization by high-resolution transmission electron microscopy shows that the phosphor possesses a good crystalline structure, while scanning electron microscopy reveals a uniform phosphor particle size in the range of 230-270 nm. X-ray photon electron spectrum analysis demonstrates that the V⁴⁺ ion promotes an electron dipole transition of Gd₂Ti₂O₇:Eu³⁺ phosphors, causing a new red-emitting phenomenon, and CIE value shifts to x=0.63, y=0.34 (a purer red region) from x=0.57, y=0.33 (CIE of Gd₂Ti₂O₇:Eu³⁺). The optimal composition of the novel red-emitting phosphor is about 26% of V⁴⁺ ions while the material is calcinated at 800  °C. The results of electroluminescent property of the material by field emission experiment by CNT-contained cathode agreed well with that of photoluminescent analysis.     

Y3Al5O12 ceramic absorbers for the suppression of parasitic oscillation in high-power Nd:YAG lasers

The objective of this study was to identify a material suitable to absorb radiation at the wavelength of neodymium-doped Yttrium Aluminum Garnet (Y₃Al₅O₁₂:YAG), 1064 nm. M-(M= Sm³⁺, Co²⁺, Co³⁺, Cr³⁺, and Cr⁴⁺) doped highly transparent YAG ceramics were fabricated, and their absorption spectra were measured. Unlike Co²⁺ and Cr³⁺-doped ceramic samples, Co³⁺ and Cr⁴⁺ and Sm³⁺-doped:YAG ceramics were found to have significant absorption at 1064 nm. However, the Sm³⁺-doped YAG clearly emerged as the best candidate because it is also transparent at 808 nm, the pumping wavelength laser diode (LD), and also at most absorption bands used for flash-lamp pumping.     

Photoluminescence characteristics of Se-doped ZnGa2O4:Mn2+ thin-film phosphors grown by pulsed laser deposition on Al2O3(0001) substrates

Se-doped ZnGa₂O₄:Mn²⁺ thin-film phosphors have been grown using a pulsed laser deposition technique at various growth conditions. Structural characterization was carried out on a series of Se-doped ZnGa₂O₄:Mn²⁺ films grown on Al₂O₃(0001) substrates using Zn-rich ceramic targets. The results of X-ray diffraction patterns showed that the lattice constants of the films decrease with the substitution of Se for the oxygen in the ZnGa₂O₄. Photoluminescence (PL) of Se-doped ZnGa₂O₄:Mn²⁺ thin films has indicated that Al₂O₃(0001) is a promising substrate for the growth of high-quality Se-doped ZnGa₂O₄:Mn²⁺ films. The emission spectra of Se-doped ZnGa₂O₄:Mn²⁺ films show a broad band extending from 479 to 550 nm and peaking at 508 nm. In particular, the incorporation of Se into the ZnGa₂O₄ lattice could induce an increase in the PL. The PL peak intensity of the Se-doped ZnGa₂O₄:Mn²⁺ films is a factor of 2.8 larger than that of the ZnGa₂O₄:Mn²⁺ films. This phosphor is promising for applications in flat-panel displays. PACS 78.20.-e; 78.55.-m; 78.66.-w