Dependence of high electric-field-induced strain on the composition and orientation of Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals

Electric-field-induced strain behavior of (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMNT) crystals with different orientations and compositions was investigated for use as electromechanical actuators. Crystallographically, high strains with low hysteresis were achieved for 〈001〉 oriented rhombohedral crystals (29%≤x≤31%) near a morphotropic phase boundary, rather than 〈110〉 and 〈111〉. Domain instability could explain inferior strain levels and large hysteresis for 〈110〉 and 〈111〉 oriented crystals. Ultrahigh strain levels up to 1.8% could be achieved for 〈001〉 oriented PMNT crystals, being related to an E-field induced phase transition. −2 kV/cm negative E-field can be applied to PMNT ferroelectric material with low hysteresis. High strain with low hysteresis makes PMNT crystals promising candidates for high performance solid-state actuators.     

铁电单晶Pb (Mg1/3Nb2/3)O3-PbTiO3的高场致应变及其在层叠式驱动器中的应用

通过研究(1_x)Pb(Mg_1/3Nb_2/3)O_{3_x}PbTiO3(PMNT)单晶在不同方向、不同组分下高场致应变的特性，确定了〈001〉取向 PMNT单晶（29％≤x≤31%）为制作层叠式驱动器的最佳组分范围，这组分的单晶具有高场致应变、低滞后而且性能较稳定的特点.研究结果表明，在保证应变曲线的线性和低滞后的前提下，将近-2kV/cm的负电场能够运用于〈001〉方向的PMNT晶体上. 40层（每片晶片尺寸为7mm×7mm×0.7mm）PM 关键词： PMNT单晶 场致应变 PMNT驱动器     

High electric-field-induced strain of Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 crystals and their application in multilayer actuators

Electric-field-induced strain behavior of differently oriented and componential (1-x)Pb(Mg_1/3Nb_2/3)O₃xPbTiO₃ (PMNT) crystals was investigated. An optimum composition range (29%≤x≤31%) of 〈001〉-oriented PMNT crystals was ascertained for multilayer actuator applications, which exhibited high-strain and low-hysteresis behavior. The rhombohedral (monoclinic)–tetragonal phase-transition behavior in PMNT single crystals is dependent on their thermal and electric history, which markedly impacts on the strain performance of the crystals. In contrast to PZT-SF (doped PZT ceramics) multilayer actuators, the strain values for 20-layer PMNT actuators with individual element sizes of 6×6×0.3 mm³ are larger by more than five times at 20 kV/cm (0.373% compared to 0.072%), and 23-μm displacements can been achieved. Against 40-N load, the displacements are decreased to 20.2 μm. PACS 77.80.Bh; 77.80.-e; 77.65.Dq; 77.65.Ly; 77.22.-d     

Preparation and multi-properties of insulated single-phase BiFeO3 ceramics

Six types of BiFeO₃ ceramic samples, with subtle differences in synthesis conditions, were prepared. The comparison of their phases, electrical resistivity, and porosity revealed that the use of Bi₂O₃ and Fe₂O₃ powders of <1 μm size and a rapid liquid-phase sintering process of 855 °C for 5 min at 100 °C/s is beneficial to synthesize poreless single-phase BiFeO₃ samples with high electrical resistivity of ∼5×10¹² Ω cm. Deoxygenated Bi_xFe_yO_{1.5x+1.5y−δ} (x≠y, δ≥0) impurities were identified and found to be the main cause of low electrical resistivity and high porosity in the multi-phase samples. Large saturation polarization of 16.6 μC/cm² and low leakage current density of 30 mA/m², both at a high electric field of 145 kV/cm, were measured in the optimized single-phase samples at room temperature besides a large piezoelectric d₃₃ coefficient of 27 pC/N and an obvious canted antiferromagnetic behavior.     

Investigation on optical transmission spectra of (1−x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 single crystals

The optical transmission spectra from 0.3 to 11 μm of relaxor ferroelectric single crystals (1−x)Pb(Mg_1/3Nb_2/3)O₃-xPbTiO₃ (PMN-xPT) were systematically studied at room temperature in this paper. The crystal is transparent between 0.45 and 5.5 μm and becomes completely absorbing around 0.4 μm in near UV region and 10 μm in infrared region. But the wavelength cutoff in near UV is much sharper than the long wavelength cutoff. As compared with other configurations, tetragonal single crystals possess the optimal transmission properties. The optical transmittance in the wavelength region from 0.45 to 5.5 μm is about 70%. The results show that tetragonal PMN-xPT single crystals are promising for a wide range of optical applications. Some discussions about the oxygen-octahedra structure that determines the basic energy level of the crystals are also presented on the optical properties of PMN-xPT single crystals.     

Ferroelectric properties of highly c-axis oriented Bi4−xLaxTi3O12 film-based capacitors

Highly c-axis oriented lanthanum-modified bismuth titanate (Bi_4−xLa_xTi₃O₁₂) films having a variety of lanthanum (La) contents were grown on Pt/TiO₂/SiO₂/Si(100) substrates using metal-organic sol deposition and subsequent annealing at 650 °C for 1 h. After systematically examining the ferroelectric properties of Bi_4−xLa_xTi₃O₁₂ films as a function of the La-content, it was concluded that the film with x=0.85 had the largest remanent polarization in the direction parallel to the c-axis. The Pt/Bi_3.15La_0.85Ti₃O₁₂/Pt capacitor showed a well-saturated polarization-electric field (P-E) switching curve with the switching remanent polarization (2P_r) value of 33 μC/cm² and the coercive field (E_c) of 68 kV/cm at an applied voltage of 10 V. More importantly, the capacitor exhibited fatigue-free behavior up to 6.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure.     

Electromechanical properties and dielectric behavior of (Bi1/2Na1/2)(1−1.5x)BixTiO3 lead-free piezoelectric ceramics

Bismuth doped bismuth sodium titanate ceramics [(Bi_1/2Na_1/2)_(1−1.5x)Bi_xTiO₃, x=0 to 0.06] were prepared, and the resulting effects on the microstructure and dielectric properties were examined. All of the Bi-doped ceramics exhibited a single phase of perovskite structure with rhombohedral symmetry. The poling leakage current was significantly reduced by the doping of Bi, facilitating the poling process of the ceramics. The doping with Bi enhances the piezoelectric properties and increases the dielectric constant and the dielectric loss of the ceramics. At 2 mol% Bi-doping level, the ceramics exhibit a large remanent polarization of 47 μC/cm² and a relatively low coercive field of 71 kV/cm, while their d₃₃ and k_p reach a maximum value of 95 pC/N and 21%, respectively.     

Compositional dependence of ferroelectric properties of highly c-axis oriented Bi4−xNdxTi3O12 film capacitors

Highly c-axis oriented neodymium-modified bismuth titanate (Bi_4−xNd_xTi₃O₁₂) films having a variety of neodymium (Nd) contents were successfully grown on Pt/TiO₂/SiO₂/Si(100) substrates using metal-organic sol decomposition. After systematically examining ferroelectric properties of the c-axis oriented Bi_4−xNd_xTi₃O₁₂ film capacitors as a function of the Nd-content, we concluded that the capacitor with x=0.85 had the largest remanent polarization. The Bi_3.15Nd_0.85Ti₃O₁₂ capacitor fabricated using a top Pt electrode showed well-saturated polarization-electric field (P-E) switching curves with the remanent polarization (P_r) of 51 μC/cm² and the coercive field (E_c) of 99 kV/cm at an applied voltage of 10 V. More importantly, the Pt/Bi_3.15Nd_0.85Ti₃O₁₂/Pt capacitor exhibited fatigue-free behavior up to 4.5×10¹⁰ read/write switching cycles at a frequency of 1 MHz. The capacitor also demonstrated an excellent charge-retaining ability and a strong resistance against the imprinting failure.     

Photoluminescence properties of Eu in Y(PO3)3 under VUV excitation

The photoluminescence properties of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) are investigated. The excitation spectrum of Y_0.85(PO₃)₃:0.15Eu₃⁺ shows that both the (PO₃)₃³⁻ groups and the CT bands of O²⁻-Y³⁺ can efficiently absorb the excitation energy in the region of 120-250 nm. Under 147 nm excitation, the optimal emissive intensity of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) is about 36% of the commercial phosphor (Y,Gd)BO₃:Eu³⁺, which hints that the absorbed energy by the host matrix could be efficiently transferred to Eu³⁺. We try to study the concentration quenching mechanism of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) under 147 and 172 nm excitation.     

Evolution from relaxor-like dielectric to ferroelectric in Ba[(Fe0.5Nb0.5)1−xTix]O3 solid solutions

Ba[(Fe_0.5Nb_0.5)_1−xTi_x]O₃ (x=0.2,0.4,0.6,0.8,0.85,0.9 and 0.95) solid solutions were synthesized by a standard solid-state reaction technique. X-ray diffraction at room temperature and dielectric characteristics over a broad temperature and frequency range were evaluated systematically. The structure of Ba[(Fe_0.5Nb_0.5)_1−xTi_x]O₃ solid solutions changed from cubic to tetragonal with increasing x. A Debye-like dielectric relaxation following the Arrhenius law similar to that in Ba(Fe_0.5Nb_0.5)O₃ was observed at lower temperature in the composition range 0.2≤x≤0.8, while the relaxor ferroelectric, diffused ferroelectric and normal ferroelectric behavior were observed for x=0.85,0.9 and 0.95, respectively. The process of the evolution of relaxor-like dielectric to ferroelectric suggested the changing from dilute polar micro-domains to polar micro-domains, polar micro/macro-domains and then polar macro-domains in the present ceramics.     

Crystal growth and dielectric, piezoelectric and elastic properties of Ca3TaGa3Si2O14 single crystal

Single crystals of Ca₃TaGa₃Si₂O₁₄ (CTGS) were successfully grown from stoichiometric melts by the conventional Czochralski technique. The relative dielectric constants, the piezoelectric strain constants and the elastic compliance constants of CTGS single crystal have been determined by an electric bridge and resonance-antiresonance method. At room temperature, the two piezoelectric strain constants d₁₁ and d₁₄ are −4.58×10⁻¹² coulombs per newton (C/N) and 10.43×10⁻¹² coulombs per newton (C/N), respectively. The velocities of the bulk acoustic wave are also calculated.     

Densification, microstructural evolution, and dielectric properties of CaTiO3-LaGaO3 microwave ceramics

The relations among the densification, microstructural evolution, and microwave dielectric properties of the (1−x)CaTiO₃-xLaGaO₃ ceramics with x=0.34 and 0.36 were investigated in this study. The results indicated that (1−x)CaTiO₃−xLaGaO₃ ceramics can be densified at 1300 °C with at least 97% of the theoretical value. The ceramics reported an orthorhombic perovskite structure, and no other detectable phases were found. Both ε_r and Q×f values can be improved by slowing the cooling rate during sintering. The ε_r and Q×f values of the 0.64CaTiO₃-0.36LaGaO₃ ceramics at cooling rates of >10 °C/min and 0.1 °C/min are 48.1 and 27,500 and 48.7 and 38,000, respectively. The higher densification obtained at a slower cooling rate plays an important role in improving the microwave dielectric properties.     

Influence of Al2O3 additions on crystallization mechanism and conductivity of Li2O-Ge2O-P2O5 glass-ceramics

The crystallization mechanism and conductivity of lithium aluminum germanium phosphate [LAGP] glass-ceramics fabricated from Li_1+xAl_xGe_2−x(PO₄)₃ (x=0.0-0.7) glass system were investigated as a function of Al₂O₃ additions. A non-isothermal analysis was performed to study the crystallization behavior of LAGP glass-ceramics at various heating rates (5-25K min⁻¹) by the Kissinger equation and the Augis-Bennett equation, illustrating volume crystallization for the glass-ceramics. The crystal identification and microstructure in glass-ceramics containing various Al₂O₃ contents were analyzed by means of XRD and FESEM. The main phase of the glass-ceramics was found to be LiGe₂(PO₄)₃, with AlPO₄ as the impurity phase. Additionally the highest total ionic conductivity (5.8×10⁻⁴ S/cm) at room temperature was obtained when x=0.5 for Li_1+xAl_xGe_2−x(PO₄)₃ (x=0.0-0.7) glass-ceramics, suggesting that it was a promising electrolyte for practical application in all-solid-state lithium batteries.     

Characterization of lead free (K0.5Na0.5)NbO3-LiSbO3 piezoceramic

(K_0.5Na_0.5)NbO₃ (KNN) based lead free ceramics have been fabricated by a solid state reaction. In this work, LiSbO₃ (LS) modified KNN based ceramics were sintered at atmospheric pressure and high density (>96% theoretical) was obtained. The detailed elastic, dielectric, piezoelectric and electromechanical properties were characterized by using the resonance technique combined with the ultrasonic method. The full set of material constants for the obtained polycrystalline ceramics were determined and compared to the pure hot pressed KNN counterpart. KNN-LS polycrystalline ceramic was found to have higher elastic compliance, dielectric permittivity and piezoelectric strain coefficients, but lower mechanical quality factor, when compared to pure KNN, exhibiting a “softening” behavior. However, a high coercive field (∼17 kV/cm) was found for the LS modified KNN material. The properties as a function of temperature were determined in the range of −50-250 ^°C, showing a polymorphic phase transition near room temperature, giving rise to improved piezoelectric behavior.     

The effect of Cu substitution on the A1g mode of La0.7Sr0.3MnO3 manganites

We report on the first Raman data of Cu substituted La_1−ySr_yMn_1−xCu_xO₃ (0≤x≤0.10 and 0.17≤y≤0.3, accordingly in order to have the same Mn⁴⁺/[Mn⁴⁺+Mn³⁺] ratio), collected in the frequency range 100-900 cm⁻¹ and at room temperature, with parallel (e_i∥e_s) and crossed (e_i⊥e_s) polarizations of the incident (e_i) and scattered (e_s) light. Spectra were fitted with a Drude-Lorentz model, and peaks at 190-220 and 430 cm⁻¹, together with two broad structures centered at near 500 and 670 cm⁻¹, have been found. We also have observed that the A_1g mode is substantially shifted with increasing Cu substitution. The A_1g phonon shift is a linear function of the tolerance factor t and the rhombohedral angle α_r, thus following the structural changes of the MnO₆ octahedra in the system.     

Parallel syntheses and thermoelectric properties of Ce-doped SrTiO3 thin films

Thermoelectric properties of single crystalline Ce_xSr_1−xTiO₃ films (0 ≤ x ≤ 0.5) have been studied by using combinatorial pulsed-laser deposition. Temperature gradient method was used for identifying an optimum growth temperature for SrTiO₃ homoepitaxial growth, at which both oxygen stoichiometry and persisting layer-by-layer growth mode could be accomplished. Electrical conductivity (σ) and Seebeck coefficient (S) were measured at room temperature for the composition-spread films grown at the optimized temperature and found to be considerably higher than those reported for bulk poly-crystalline compounds. Hall measurement revealed that carrier density linearly increased with increasing x, suggesting that a trivalent Ce ions substituted divalent Sr ions to supply electrons. A maximum power factor (S²σ) was obtained for the x = 0.2 film, being 7 and 14 μW/K² cm at 300 and 900 K, respectively.     

Phase transformation behavior and dielectric characteristics of BaTi1−x(Al1/2Nb1/2)xO3 (0.01≤x≤0.40) ceramics

Microstructure, phase transformation behavior and dielectric properties of BaTi_1−x(Al_1/2Nb_1/2)_xO₃ (0.01≤x≤0.40) ceramics were investigated. A high level of (Al_1/2Nb_1/2)⁴⁺ substitution for Ti⁴⁺ ions was not conducive to the stability of the perovskite structure and resulted in the formation of BaAl₂O₄. As x was increased, lattice constants and unit cell volume decreased, reached a minimum at x=0.10 and then increased. The BaTi_1−x(Al_1/2Nb_1/2)_xO₃ ceramics at room temperature experienced a transformation from ferroelectric to paraelectric phase with increasing (Al_1/2Nb_1/2)⁴⁺ concentration. Meanwhile, permittivity of the BaTi_1−x(Al_1/2Nb_1/2)_xO₃ ceramics was markedly reduced, while Q value was slightly increased. Frequency dispersion of dielectric peak was obviously increased as x was increased from 0.01 to 0.10. It is of great interest that a dielectric abnormity represented by a broad dielectric peak at 200-400 K was observed for the composition with x=0.40.     

Effects of vanadium doping on structure and electrical properties of SrBi4Ti4O15 thin films

The effects of vanadium(V) doping into SrBi₄Ti₄O₁₅ (SBTi) thin films on the structure, ferroelectric, leakage current, dielectric, and fatigue properties have been studied. X-ray diffraction result showed that the crystal structure of the SBTi thin films with and without vanadium is the same. Enhanced ferroelectricity was observed in the V-doped SrBi₄Ti₄O₁₅ (SrBi_4−x/3Ti_4−xV_xO₁₅, SBTiV-x (x = 0.03, 0.06, and 0.09)) thin films compared to the pure SrBi₄Ti₄O₁₅ thin film. The values of remnant polarization (2P_r) and coercive field (2E_c) of the SBTiV-0.09 thin film capacitor were 40.9 μC/cm² and 105.6 kV/cm at an applied electric field of 187.5 kV/cm, respectively. The 2P_r value is over five times larger than that of the pure SBTi thin film capacitor. At 100 kHz, the values of dielectric constant and dielectric loss were 449 and 0.04, and 214 and 0.06 for the SBTiV-0.09 and the pure SBTi thin film capacitors, respectively. The leakage current density of the SBTiV-0.09 thin film capacitor measured at 100 kV/cm was 6.8 × 10⁻⁹ A/cm², which is more than two and a half orders of magnitude lower than that of the pure SBTi thin film capacitor. Furthermore, the SBTiV-0.09 thin film exhibited good fatigue endurance up to 10¹⁰ switching cycles. The improved electrical properties may be related to the reduction of internal defects such as bismuth and oxygen vacancies with changes in the grain size by doping of vanadium into SBTi.     

The great potential of coupled substitutions in In2O3 for the generation of bixbyite-type transparent conducting oxides, In2−2xMxSnxO3

The study of coupled substitution of In³⁺ by Sn⁴⁺/M²⁺ species in In₂O₃ has allowed In_2−2xSn_xM_xO₃ solid solutions with bixbyite structure to be synthesized for M=Ni, Mg, Zn, Cu and Ca. The latter exhibit a rather broad homogeneity range and are characterized by an ordered cationic distribution. More importantly, these novel oxides are transparent conductors, and among them the Zn and Cu phases show a great potential, since one observes a semi-metallic behavior with conductivity up to 3×10² and 3×10³ (Ω cm)⁻¹, respectively, to be compared to 2×10³ (Ω cm)⁻¹ for reduced ITO. Moreover, in contrast to the latter no reducing conditions are required for reaching such performances.     

Dielectric properties and phase transitions of (Pb0.87La0.02Ba0.1)(Zr0.6Sn0.4−xTix)O3 ceramics with compositions near AFE/RFE phase boundary

The electrical properties and phase transition behavior of (Pb_0.87La_0.02Ba_0.1)(Zr_0.6Sn_0.4−xTi_x)O₃ solid solutions (PLBZST, 0.04≤x0.2) were investigated by the X-ray diffraction, permittivity, pyroelectric current, and P-E electric hysterisis loops. As the composition x increased from 0.04 to 0.2, the antiferroelectric ceramics (x≤0.07, AFE) with tetragonal phase changed to the ferroelectric relaxors (RFE, 0.09≤x). AFE ceramics showed a peculiar diffuse phase transition and dielectric relaxation at the low temperature (down to −100 °C) due to a frustration between AFE and FE state. With an increase in composition x, electrically field-induced AFE-FE switching field (E_AFE-FE) and AFE-paraelectric (PE) phase transition temperature (T_c) are depressed in the temperature (T)-Ti composition (x) phase diagram, a FE-AFE-PE triple phase point (T_tr) with the lowest transition temperature occurred at x=0.09. The pyroelectric currents under an application of various external electric field (E) were measured to identify a T-E phase diagram of the PLBZST compound.