Charge conduction process and photoelectrical properties of bulk heterojunction device based on sulphonated nickel phthalocyanine and rose Bengal

The dependence of photovoltaic performance of the bulk heterojunction photovoltaic device based on the blend of sulphonated nickel phthalocyanine (NiPcS) and rose Bengal (RB) on their composition, thermal annealing and oxygen exposure has been investigated. It is found that both electron and hole mobility in RB phase and NiPcS phase, respectively has been increased on thermal annealing. The power conversion efficiency of the device increases upon thermal annealing, attributed the balance charge transport. The power conversion efficiency of the device experiences a drastic increase upon oxygen exposure, which attributed to the photo-induced doping, increase in exciton diffusion length in NiPcS phase and increased volume of exciton dissociation interfacial sites. From the impedance spectroscopy, we conclude that the change in bulk resistance and dielectric constant of the active material due to the illumination has a direct relevance to the photocurrent generated by the device.     

Correlation of stability to varied CdCl2 treatment and related defects in CdS/CdTe PV devices as measured by thermal admittance spectroscopy

A correlation between the CdCl₂ treatment and the change in conversion efficiency with light and heat stress indoors (stability) has been shown previously by our group for CdS/CdTe:Cu PV devices. In the present work CdTe devices were fabricated with various CdCl₂ treatments and with and without a Cu containing back contact. The electrical characteristics of the defects acting as traps in these devices were studied using thermal admittance spectroscopy (TAS). The activation energy E_t−E_V, the apparent capture cross section and the densities of state functions (using Walter's method) of the traps in the devices were estimated.     

Electrical properties and Schottky diodes using N-N′diphenyl-1-4phenylenediamine

Thin films of, N-N′diphenyl 1-4phenylene-diamineane are prepared using vacuum sublimation technique. The electrical conductivity from room temperature down to 127 K is studied. It is found that the conduction of charge carriers obeys T^−1/2 dependence on temperature. The average hopping distance, hopping energy, density of states and their variation due to post-deposition heat treatment are studied. Schottky diodes are fabricated with gold as ohmic contact and aluminium as Schottky contact. From the observed current voltage characteristics the saturation current density, diode ideality factor and the barrier height are determined. Their variation with air annealing is also investigated.     

Thermoelectric properties of Bi-Sb semiconducting alloys prepared by quenching and annealing

Bi_100−xSb_x (x=8-17) alloys were prepared by direct melting of constituent elements, which was followed by quenching and annealing. The synthesis of high-homogeneity alloys was confirmed by X-ray diffraction, differential thermal analyses and electron microprobe analysis. The semiconducting and thermoelectric properties of the samples were investigated by measuring Hall coefficient, electrical resistivity and Seebeck coefficient in the temperature range from 20 to 300 K for both the as-quenched and annealing samples. The properties change gradually with the Sb concentration x, which is attributed to the variation of the energy gap. The Hall mobility was enhanced by annealing, which leads to a small electrical resistivity and a large Seebeck coefficient. Consequently, large values of about 8.5 mW/mK² for the power factor were obtained in the annealed alloys of x=8,12, and 14.     

Annealed Treatment Effect in Poly（3-hexylthiophene）：Methanofullerene Solar Cells

Polymer photovoltaic devices based on poly（3-hexylthiophene） （P3HT） ： [6,6]-phenyl-C61-butyricacid methyl ester （PCBM） 1：1 weight-ratio blend are reported. The effects of various annealing treatments on the device performance are investigated. Thermal annealing shows significant improvement of the device performances. For devices at 130℃ annealing, maximum power conversion efficiency （PCE） of 3.3% and All factor up to 60.3% is achieved under air mass 1.5, 100 m W/cm^2 illumination. We discuss the effect of thermal annealing by the results of ultraviolet-visible absorption spectroscopy （UV-vis）, dark current-voltage curve, atomic force microscopy （AFM）.     

电荷转移金属[60]富勒烯盐的光电性质

用物理喷束淀积技术制备了过渡金属[60]富勒烯盐C60Ni薄膜，研究了Al/C60Ni/ITO光电池的光伏效应和正反向电学特性并与Al/C60/ITO膜进行了比较。用界面偶极电场解释了Al/C60Ni界面光伏效应和整流应的增强，表明在该样品中发生的从Ni原子到C60的电子转移使Al/C60Ni界面偶极电场增强。     

Effect of annealing temperature on the optical and electrical properties of amorphous As45.2Te46.6In8.2 thin films

The optical absorption of the As-prepared and annealed As_45.2Te_46.6In_8.2 thin films are studied. Films annealed at temperatures higher than 453 K show a decrease in the optical energy gap (E_o). The value of E_o increases from 1.9 to 2.43 eV with increasing thickness of the As-prepared films from 60 to 140 nm. The effect of thickness on high frequency dielectric constant (?_∞) and carrier concentration (N) is also studied. The crystalline structures of the As_45.2Te_46.6In_8.2 thin films resulting from heat treatment of the As-prepared film at different elevated temperatures is studied by X-ray diffraction. An amorphous-crystalline transformation is observed after annealing at temperatures higher than 453 K. The electrical conductivity at low temperatures is found due to the electrons transport by hopping among the localized states near the Fermi level. With annealing the films at temperatures higher than 473 K (the crystallization onset temperature) for 1 h, the electrical conductivity increases and the activation energy decreases, which can be attributed to the amorphous-crystalline transformations.     

Effect of composition and thermal annealing on the absorption and electrical conduction of Se85−xTe15Sbx glasses

The optical absorption of the as-prepared and thermally annealed Se_85−xTe₁₅Sb_x (0≤x≤9) thin films was measured. The mechanism of the optical absorption follows the rule of non-direct transition. The optical energy gap (E₀) decreased from 1.12 to 0.84 eV with increasing Sb content of the as-prepared films from 0 to 9 at.%. The as-prepared Se₇₆Te₁₅Sb₉ films showed an increase in (E₀) with increasing the temperature of annealing in the range above T_g (363 K). The electrical conductivity of the as-prepared and annealed films was found to be of Arrhenius type with temperature in the range 300-360 K. The activation energy for conduction was found to decrease with increasing both the Sb content and temperature of annealing. The results were discussed on the basis of the lone-pair electron effect and of amorphous crystalline transformation.     

Structural-electronic aspects related to the near-infrared light emission of Fe-doped silicon films

The need of efficient (fast and low consumption) optoelectronic devices has always been the driving force behind the investigation of materials with new or improved properties. To be commercially attractive, however, these materials should be compatible with our current micro-electronics industry and/or telecommunications system. Silicon-based compounds, with their matured processing technology and natural abundance, partially comply with such requirements—as long as they emit light. Motivated by these issues, this work reports on the optical properties of amorphous Si films doped with Fe. The films were prepared by sputtering a Si +Fe target and were investigated by different spectroscopic techniques. According to the experimental results, both the Fe concentration and the thermal annealing of the samples induce changes in their atomic structure and optical-electronic properties. In fact, after thermal annealing at ∼750 °C, the samples partially crystallize with the development of Si and/or β- FeSi₂ crystallites. In such a case, certain samples present light emission at ∼1500 nm that depends on the presence of β- FeSi₂ crystallites and is very sensitive to the annealing conditions. The most likely reasons for the light emission (or absence of it) in the considered Fe-doped Si samples are presented and discussed in view of their main structural-electronic characteristics.     

Thermal expansion and kinetic coefficients of crystals

Electrical (ρ) and thermal (W) resistivities and thermal expansion coefficient (β) of Cu, Zn, Al, Pb, Ni, β-brass, Al₂O₃, NaCl, Si, SiO₂(∥), and SiO₂(⊥) were simultaneously measured with standard four-probe, absolute steady-state, and quartz dilatometer techniques. Measurements of Ni and β-brass were performed at temperatures from 300 to 1100 K and measurements of all other samples were made between 90 and 500 K. This temperature range includes the range below and above the Debye temperature (T_D). The total uncertainties of the specific electrical and thermal resistivities and thermal expansion coefficient (TEC) measurements are 0.5%, 3.0%, and (1.5-4.0%), respectively. The universal linear relationship between the electrical and thermal resistivities and βΤ over the wide temperature range was found experimentally. Using the Landau criterion for convection development for ideal phonon and electron gases in the solids, the universal relations, ρ^ph/ρ^*≡βT and W^ph/W^*≡βT (where ρ^ph is the phonon electrical resistivity, is the characteristic electrical resistivity, W^ph is the phonon thermal resistivity, and W^*=k_BG/qc_p is the characteristic thermal resistivity) between relative phonon electrical and phonon thermal resistivities and βΤ were derived. The derived universal relations provide a new method for estimating the kinetic coefficients (electrical and thermal resistivities) from TEC measurements.     

Effect of the oligothiophene chain length on the performance of organic photovoltaic cells

We investigate photovoltaic cells based on α-oligothiophene molecules with different chain lengths nT (n=4,6,8) deposited on a sandwich structure between two electrodes: ITO and Al. From the analysis of the absorption and photocurrent spectrum, we have shown that the structure of the oligothiophene affects considerably the absorbing character of the evaporated film, which is increasingly significant from 4T towards 8T, and a significant photocurrent in agreement with strong absorption in the region Al/nT. Moreover, a theoretical model of Ghosh is used to display the photocurrent origin, proved to be sufficient after adjustment with a random term. Then we deduce that the crystalline order of the film improves the transport of charge and the photocurrent. The results are confirmed by electrical characterization under illumination that shows effectively an influence of the expansion of the molecular chains on the increase in the energy efficiencies and on the performances of organic photovoltaic cells.     

Carbon nanotubes based nanocomposites for photocurrent improvement

We measure the optical and electrical properties of nanocomposites thin films made of poly-3-hexilthiophene and multi-walled carbon nanotubes (MWNT) filled with iron/iron-oxide, as well as the performance of photovoltaic devices built with such films. We find that the devices efficiency has a maximum for a certain MWNT concentration and that the electrical behavior is mainly dependent on the charge transport properties of the MWNT. To improve some engineering aspects, a bilayer geometry is proposed, allowing rectifying J × V characteristics curves.     

Physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing

This paper presents the physical properties of vacuum evaporated CdTe thin films with post-deposition thermal annealing. The thin films of thickness 500 nm were grown on glass and indium tin oxide (ITO) coated glass substrates employing thermal vacuum evaporation technique followed by post-deposition thermal annealing at temperature 450 °C. These films were subjected to the X-ray diffraction (XRD),UV-Vis spectrophotometer, source meter and atomic force microscopy (AFM) for structural, optical, electrical and surface morphological analysis respectively. The X-ray diffraction patterns reveal that the films have zinc-blende structure of single cubic phase with preferred orientation (111) and polycrystalline in nature. The crystallographic and optical parameters are calculated and discussed in brief. The optical band gap is found to be 1.62 eV and 1.52 eV for as-grown and annealed films respectively. The I–V characteristics show that the conductivity is decreased for annealed thin films. The AFM studies reveal that the surface roughness is observed to be increased for thermally annealed films.     

The effects of annealing on Au/pyronine-B/MD n-InP Schottky structure

Thin film of non-polymeric organic compound pyronine-B has been fabricated on moderately doped (MD) n-InP substrate as an interfacial layer using spin coating technique for the electronic modification of Au/MD n-InP Schottky contact. The electrical characteristics have been determined at room temperature. The barrier height and the ideality factor values for Au/pyronine-B/MD n-InP Schottky diode have been obtained from the forward bias I-V characteristics at room temperature as 0.60 eV and 1.041; 0.571 and 1.253 eV after annealing at 100 and 250 °C, respectively. An increase in annealing temperature at the Au/n-InP Schottky junction is shown to increase the reverse bias leakage current by about one order of magnitude and decrease the Schottky barrier height by 0.027 eV. Furthermore, the barrier height values for the Au/pyronine-B/MD n-InP Schottky diode have also been obtained from the C-V characteristics at room temperature as 1.001 and 0.709 eV after annealing at 100 and 250 °C, respectively. Finally, it was seen that the diode parameters changed with increase in the annealing temperature.     

Surface modifications of ITO electrodes for polymer light-emitting devices

Surface modifications were performed on the indium tin oxide (ITO) substrates for polymer light-emitting devices, using the different treatment methods including solvent cleaning, hydrochloric acid treatment and oxygen plasma. The influence of modifications on the surface properties of ITO electrodes were investigated by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), contact angle, and four-point probe. The surface energies of the ITO substrates were also calculated from the measured contact angles. Experimental results demonstrate that the surface properties of the ITO substrates strongly depend on the modification methods, and oxygen plasma more effectively improves the ITO surface properties compared with the other treatments. Furthermore, the polymer light-emitting electrochemical cells (LECs) with the differently treated ITO substrates as device electrodes were fabricated and characterized. It is observed that the surface modifications on ITO electrodes have a certain degree of influence upon the injection current, luminance and efficiency, but hardly upon the turn-on voltages of current injection and light emission which are close to the measured energy gap of electroluminescent polymer. Oxygen plasma treatment on the ITO electrode yields the better performance of the LECs, due to the improvement of interface formation and electrical contact of the ITO electrode with the polymer blend in the LECs.     

Annealing of In0.45Ga0.55As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devices

The effects of thermal annealing on the large monolayer (11 ML) coverage of In_0.45Ga_0.55As/GaAs quantum dots (QDs) is being investigated in this study. Low temperature (8 K) photoluminescence (PL) spectra exhibits suppressed blueshift of the strongest PL emission peak even at high temperature annealing (800 °C). TEM and DCXRD characterizations showed the existence of the dots with good crystalline quality at annealing temperatures of 800-850 °C. The physics of annealing induced compositional modification of the InGaAs QDs with various monolayer coverage has been studied by a theoretical model and simulation. All our studies establish the thermal stability of large ML coverage InGaAs QDs, which is desirable for optoelectronic devices required for selective wavelength tuning in specific applications.     

Preferential regrowth of indium–tin oxide (ITO) films deposited on GaN (0001) by rf-magnetron sputter

Effects of thermal treatments on the electrical properties and microstructures of indium–tin oxide (ITO)/GaN contacts have been investigated using a rf-magnetron sputter deposition followed by rapid thermal annealing. ITO films annealed at 800 °C revealed Schottky contact characteristics with a barrier height corresponding to ITO’s work function of 4.62 eV. The evolution of electrical properties of ITO/GaN contacts was attributed to the preferential regrowth of In₂O₃ (222)//GaN (0001) with an ideal metal–semiconductor Schottky contact. The feasible use of ITO/GaN as a transparent Schottky contact would be realized by the enhanced regrowth of In₂O₃ at high temperature. Received: 1 September 2000 / Accepted: 15 November 2000 / Published online: 28 February 2001     

Characterization of Ohmic contacts on GaN/AlGaN heterostructures

The surface morphology and electrical resistance of the contacts on semiconductor devices are strongly influenced by metallization scheme and annealing conditions. In this work is presented an investigation of Ohmic contacts formed by metal-semiconductor alloying on epitaxial GaN/AlGaN heterostructures. After the deposition of metallic multi-layers (Ti, Al, Au and Pt), the process of rapid thermal annealing was carried out in nitrogen, argon and forming gas atmosphere.A series of the samples with different sequences of metallic layers and diverse thicknesses was prepared by employing electron beam evaporation and lift-off deposition techniques. The chemical composition of the samples before and after annealing was studied by means of X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) techniques combined with low energy Ar⁺ ion sputtering. The sputtering has been carried out in two different modes: by using constant (square) or gradually narrowed sputtered area. The changes in the chemical state of constituent elements and compositional profiles of the contacts after thermal annealing were revealed from the obtained results. Among the technological problems, influencing on the quality of the contact, were found to be the oxidation and nitridation of the contact surface during thermal annealing, as well as the intermediate sub-layers of Al and Ti oxides, formed during the deposition of metallic multi-layered structure.     

Fiber laser annealing of indium-tin-oxide nanoparticles for large area transparent conductive layers and optical film characterization

Indium tin oxide (ITO) coatings are widely used as transparent electrodes for optoelectronic devices. The most common preparation methods are sputtering, evaporation, and wet chemical deposition. ITO coatings can also be manufactured by solution deposition of ITO nanoparticles followed by furnace thermal annealing with the major motivation to reduce equipment investment. However, conventional furnace annealing is energy intensive, slow, and limited by the peak processing temperature. To overcome these constraints, we suggest using a laser beam for ITO nanoparticle annealing over a large area. It is shown in the present study that a low cost, high power, and high efficiency laser can yield large area functional ITO films in a process that carries substantial promise for potential industrial implementation. Furthermore, laser annealing generates higher electrical conductivity than conventional, thermally annealed nanoparticle films. The optical and electrical properties of the annealed ITO films can also be altered by adjusting laser parameters and environmental gases.     

Electrical characteristics of poly(methylsilsesquioxane) thin films for non-volatile memory

In this communication the electrical characteristics of poly(methylsilsesquioxane) (PMSSQ) thin films and the possibility of charge storage in the Au nanoparticle embedded PMSSQ film base memory element have been studied. PMSSQ films were sandwiched between Al and Si electrodes to fabricate metal-polymer-semiconductor (MPS) structures. The conduction mechanism in PMSSQ films has been investigated. The charge transport mechanism appears to be space charge limited current (SCLC) at the higher-voltage region. Various electrical parameters such as reverse saturation current, barrier height, ideality factor, rectification ratio, shunt and series resistance and charge carrier mobility in PMSSQ have been determined. C-V analysis is performed to confirm the memory effect for Au nanoparticles embedded MPS structures. A definite clockwise hysteresis is observed which indicates the possibility of charge storage in the Au nanoparticles embedded PMSSQ film.