Faraday mirror-typed optical current transformers and its theoretical analysis

A Faraday mirror-typed optical current transformer (OCT) design with turn-back optical paths is proposed to overcome the harmful effects of the linear birefringence inside bulk glass current sensing head, which can double the sensitivity and improve the state of polarization of the system output. The theoretical analysis of the working principle, the simulation of the polarization state of the output light beam and the comparison between it and the OCT with polarization preserving total reflection (PPTR) layers are presented. The results show that this design has a good suppressing effect on the degeneration of the polarization state of the output light, which has certain reference significance on the performance improvement of the present bulk glass OCT, and the development of practical OCTs.     

高性能大口径顺磁旋光玻璃

旋光玻璃广泛用于激光的调制、偏转、开关和高功率激光系统的隔离器.旋光玻璃的主要性质为费尔德常数.含高顺磁离子的旋光玻璃具有大的费尔德常数,可见区高透过等优点.具有较大磁矩和较低f-d跃迁能隙的顺磁离子铽应具有大的费尔德常数.本工作以高Tb2O3含量的Tb2 O3-B2O3-Al2O3-SiO2为基本系统.研究玻璃的形成;测定了不同Tb3+离子浓度时的费尔德常数,符合线性关系;调整玻璃组成以避免析晶,发展了波长632 nm的费尔德常数为75.1～116.4 rad/(T·m)的TG20,TG28,TG32旋光玻璃系列.建立了10升规模铂坩埚高温熔炉,成形和退火设备.形成口径30 cm旋光玻璃的生产能力.产品的1054 nm光吸收小于0.008 cm-1,1 ns的激光破坏阈值大于8 J/cm2,透过波前畸变小于五分之一波长.所制造的旋光玻璃已用于美国Lawrence Livermore国家实验室,中国"神光Ⅱ"升级,英国Rutherford实验室的Vulcan Laser System和CNRS CEA Luli等高功率激光系统.     

基于光纤反射腔的高灵敏电流传感器方案

提出了一种基于平面Y分支波导与法拉第旋镜的高灵敏度光纤电流传感器结构方案。利用两个法拉第旋镜与平面Y分支波导构成一个光纤反射腔,通过光在腔中的多次反射来增加待测电流导致的传感光纤中的法拉第相移,从而实现对微弱电流的测量。该结构方案中首次采用了平面Y分支光波导,从而可降低光路系统损耗,增加灵敏度,为微弱电流测量的工程化提供了一种可行的方法。     

一种大动态范围的磁光电流传感器方案

提出了一种扩大磁光式电流传感器动态范围的方法。磁光式电流传感器是基于法拉第效应和安培环路定律实现电流测量的。由于法拉第旋转角随被测电流周期性增大，测量时只能利用正弦曲线单调变化的部分，因此限制了电流的测量范围。利用光纤维尔德常数随光波长变化这一特性，通过测量两种光波旋转的角度差，获得了大电流的测量值。在正常计量范围内利用单波长数据获得精度较高的计量值，达到扩大传感器测量范围的目的。分析表明，当两波长的维尔德常数相差20％时，电流测量范围可以扩大到单波长时的6倍。采用这种方法可望用一个传感器同时满足电力系统中的计量和保护两种用途。     

Broad-Band Integrated Optical Electric Field Sensor Using Reflection Mach-Zehnder Waveguide Modulator

A lithium niobate (LiNbO₃) broad-band photonic sensor using reflection-type Mach-Zehnder optical waveguide modulator has been designed, fabricated, and experimentally demonstrated. The bare chip size of the sensor is microminiaturized as small as 20×5×0.5 mm³. The sensor has a wide band frequency response from 10 kHz to 20 GHz with variation less than ± 5 dB. The sensor system shows better linear characteristic from 100 mV/m to 700 V/m, and the sensitivity is 33 mV/m. Besides, the nanosecond EMP with intensity of 30 kV/m has been measured in the time domain.     

Passively Q-switched laser operation in a composite Nd:YVO4/Nd:YVO4/Nd:YVO4 crystal with a GaAs saturable absorber

By using a piece of GaAs wafer as the saturable absorber, the performance of the passively Q-switched composite Nd:YVO₄ laser with different output couplers has been demonstrated for the first time as far as we know. The largest continuous wave output power of 1.52 W is obtained at the incident pump power of 5.31 W, giving an optical conversion efficiency of 28.7% and a slope efficiency of 30.2%. The shortest pulse width of 11 ns, the largest single-pulse energy of 2.49 μJ and the highest peak power of 190 W are also obtained.     

Imperfection errors in glass block faraday effect current sensor

Theoretical analysis of measurement errors caused by the imperfection of the sensing optical loop in a glass block Faraday effect current sensor has been presented. The experimental results with the fabricated sensor which was designed to achieve a closed homogeneous and isotropic optical path show the importance of the perfectly isotropic and closed loop, in accordance with the theoretical consideration.     

Diode-pumped passively Q-switched Nd:LuxY1−xVO4 laser at 1.34 μm with two V:YAG saturable absorbers

Laser performance with the mixed Nd:Lu_0.15Y_0.85VO₄ crystal at 1.34 μm wavelength has been demonstrated. The continuous wave (cw) operation was carried out in a simple plano-concave resonator with an optical conversion efficiency of 23% and a slop efficiency of 25%. At a pump power of 6.78 W, the Q-switched pulses with the largest average output power of 349 mW, the shortest pulse width of 30.6 ns, the largest repetition rate of 42.5 kHz, the highest peak power of 268 W and the largest pulse energy of 8.2 μJ were obtained, corresponding to the V:YAG with initial transmission of 89%.     

无偏振效应分束器反射相移对法拉第镜式光学电流互感器输出光偏振态的影响

线性双折射和反射相移使光学电流互感器输出光偏振态产生椭圆退化并导致灵敏度降低,法拉第镜式光学电流互感器可以有效解决椭圆退化问题。无偏振效应分束器是构成该方案的核心器件,为了准确掌握无偏振效应分束器的性能和作用,用琼斯矩阵建立了无偏振效应分束器和法拉第镜式光学电流互感器的矩阵模型。分析了无偏振效应分束器反射相移对系统输出光偏振态的影响。提出无偏振效应分束器反射相移的测量方案并测出其常温下的实际值为5.02°,绘制了温度实验曲线。用MathCAD软件仿真了系统输出光偏振态图,并分析了椭率与无偏振效应分束器反射相移的关系。指出计量0.2级光学电流互感器所允许的反射相移漂移范围要小于0.1%。所得结果可为光学电流互感器的实用化研究提供参考。     

溅射制备Ta2O5薄膜的表面形貌与光学特性

在室温条件下利用溅射Ta₂O₅靶材的方法制备了Ta₂O₅薄膜,并采用将薄膜两侧的反射率光谱进行比较的简便方法分析评估薄膜的光吸收,发现溅射制备薄膜的额外光吸收源是溅射引起的缺氧形成的,选择适当的溅射功率和含氧比例的工作气体能有效地消除这些缺陷、不用任何加温处理就可制备得到表面平坦和高致密度的高品质Ta₂O₅薄膜. 关键词： 2O₅薄膜')" href="#">Ta₂O₅薄膜 光吸收 表面形貌 磁控溅射     

Optical switch with low-phase transition temperature based on thin nanocrystalline VOx film

An optical switch is fabricated by using micromachining technology, which is based on thin nanocrystalline vanadium oxide (VO_x) film, and it consists of four layers: a silicon (Si) substrate layer, a VO_x layer, a Si₃N₄ buffer layer, and an aurum (Au) electrode layer. By applying a switching power supply to a pair of the Au electrodes, the optical switch is controlled to exhibit from an “on” state with semi-conducting phase to an “off” state with metallic phase. The optical switch performance is investigated, and testing results show that its extinction ratio is about 14 dB, its switching response time can achieve about 1.5 ms, and the power dissipation required for stimulating switching to work can be below about 15 mW at least, which is lower than the power dissipation of conventional optical switches based on microstructure thin vanadium dioxide (VO₂) films. This kind of optical switch is potential to be applied as optical switch for optical communication.     

The epitaxial growth of BaSnO3 buffer layer on IBAD-MgO template and its effects on GdBa2Cu3O7−δ film: A preliminary study

We report a successful fabrication of c-axis oriented GdBa₂Cu₃O_7−δ (GdBCO) films on the BaSnO₃ (BSO) buffer layers on ion-beam assisted deposition (IBAD)-MgO template by pulsed-laser deposition (PLD). The (0 0 l) growth and in-plane textures of BSO buffer layers were found sensitive to the substrate temperature (T_s). With increasing the BSO layer thickness up to ∼165 nm, in-plane texture (Δ? ∼ 6.2°) of BSO layers was almost unaltered while completely c-axis oriented BSO layers were obtainable from samples with the thickness below ∼45 nm. On the BSO buffer layers showing in-plane texture of 6.2° and RMS surface roughness of ∼8.6 nm, GdBCO films were deposited at 780–800 °C. All GdBCO films exhibited Δ? values of 4.6–4.7°, T_c,zero of ∼91 K, and critical current density (J_c) over 1 MA/cm² at 77 K in a self-field. The highest J_c value of 1.82 MA/cm² (I_c of 51 A/cm-width) was achieved from the GdBCO film deposited at T_s of 790 °C. These results support that BSO can be a promising buffer layer on the IBAD-MgO template for obtaining high-J_c GdBCO coated conductors.     

新型分布式光纤管道泄漏检测技术及定位方法研究

介绍了一种基于萨尼亚克(Sagnac)干涉仪的直线型分布式光纤管道泄漏监测系统,实时进行管道泄漏监测和定位。此系统有两条传感光纤,可有效提高管道监测距离。推导了泄漏信号引起的光信号相位变化表达式;分析了该干涉仪应用于泄漏检测的原理及其泄漏源定位方法,并在分别距两传感光纤末端的法拉第旋转镜为3.990km和4.024 km处进行了泄漏检测实验。管道泄漏实验结果表明,该系统较准确地确定了泄漏源位置且定位误差小于1.05%.     

A photonic crystal fiber sensor based on differential optical absorption spectroscopy for mixed gases detection

A photonic crystal fiber sensor based on differential optical absorption spectroscopy for mixed gas detection is presented. In such sensor, hollow core photonic crystal fiber is utilized as gas cell and the feasibility for gas detection is verified by experiment. The components concentration of mixed gas NH₃ and C₂H₂ are measured and the detection sensitivity is 143 ppmv.     

Development of bulk-optic current sensor using glass ring type faraday cells

Bulk-optic current sensors have been developed for electric power systems. This current sensor has a glass ring type Faraday cell, where a light beam circulates around a current-carrying-conductor to precisely measure the current. Fundamental performances and practical applications are described.     

Three-Photon Absorption in Photorefractive BSO and BGO Crystals

The possibility of optical limitation of picosecond laser radiation in photorefractive Bi₁₂SiO₂₀ (BSO) and Bi₁₂GeO₂₀ (BGO) crystals at a wavelength of 1064 nm has been demonstrated. It is shown that the mechanism determining the process of optical limitation is three-photon absorption. The coefficients of three-photon absorption have been determined by the Z-scanning method.     

Optical and electrical properties of single Sb2Se3 nanorod

In this report, methods of solvothermal synthesis of Sb₂Se₃ nanorods from a single-source precursor Sb[Se₂P(O ⁱPr)₂]₃ were demonstrated. The synthesized Sb₂Se₃ nanorods were expected to have new optical and electrical properties. With the electron beam (E-beam) lithography and focus ion beam (FIB) techniques, we achieved immobilization and positioning of a single Sb₂Se₃ nanorod on a patterned template. By using the confocal Raman microscope and two-point-contact electrical measurement methods, we obtained optical and electrical characteristics from a single Sb₂Se₃ nanorod.     

强冲击压缩下LiF，Al2O3和LiTaO3单晶的透光性

在二级轻气炮上，用高速电子相机扫描照相技术和改进的Mallory实验装置，对z切LiF，Al₂O₃(蓝宝石)和LiTaO₃单晶材料的冲击透光性进行了对比测量，并用黑密度计提取出动态图像定量化的光强对比度变化曲线.结果表明，LiF单晶在102 GPa压强下能够保持长时间的初始透光性不变，与公认的LiF具有优良的高压下透明性的认识一致.LiTaO₃单晶在实验压力(139GPa)下变成基本不透明.而Al_{关键词： 2}O₃')" href="#">Al₂O₃ LiF 3')" href="#">LiTaO₃ 光学透明性     

Calculation of optical constant of amorphous germanium arsenoselenide wedge-shaped thin films from their shrunk transmittance and reflectance spectra

The optical transmittance spectrum is influenced by inhomogeneities in germanium arsenoselenide thin films. The non-uniformity of thickness, found under the present deposition conditions, gives rise to a clear shrinking of the interference fringes of the transmittance spectrum at normal incidence. Inaccuracies and even serious errors occur if the refractive index and film thickness are calculated from such a shrunken transmittance spectrum, under the unrealistic assumption that the film is uniform. The analytical expressions proposed by Swanepoel [J. Phys. E. Sci. Instrum. 17 (1984) 896] enabled derivation of the refractive index and film thickness of a wedge-shaped thin film from its shrunk transmittance spectrum. This method was applied in this study making it possible to derive the refractive index and average thickness to an accuracy better than 1%. Dispersion of the refractive index is discussed in terms of the single-oscillator Wemple–DiDomenico model [Phys. Rev. B 3 (1971) 1338]. The absorption coefficient and, thus the extinction coefficient, can be calculated from transmittance and reflectance spectra in the strong absorption region. The optical energy gap is derived from Tauc's extrapolation [Amorphous and Liquid Semiconductor (Plenum Press, New York, 1974)]. The relationship between the optical gap and chemical composition in the Ge _x As_{30– x} Se₇₀ (with 0 ≤ x ≤ 30) amorphous system is discussed in terms of the chemical bond approach and cohesive energy.     

基于BiB3O6晶体的飞秒光参量变换特性

对基于新型非线性晶体BiB₃O₆(BIBO)的飞秒光参量变换过程的参量特性进行了研究. 计算了BIBO晶体三个光学主平面内的相位匹配条件和有效非线性系数,确定了克尔透镜锁模钛宝石激光器的基频光与倍频光抽运时最佳的光学主平面和相位匹配方式,并分析了三波的时间走离和空间走离,以及信号光的参量增益和带宽. 为利用基于BIBO晶体的飞秒光参量技术获得高能量、宽调谐、窄脉宽的光源提供理论依据和实验指导. 关键词： 3O₆')" href="#">BiB₃O₆ 光参量变换 共线相位匹配 光学主平面