Spin‐polarized electron gas in Co2M Si/SrTiO3 (M = Ti,V, Cr,Mn, and Fe) heterostructures

Spin‐polarized density functional theory is used to study the TiO₂ terminated interfaces between the magnetic Heusler alloys Co₂Si (M = Ti, V, Cr, Mn, and Fe) and the non‐polar band insulator SrTiO₃. The structural relaxation at the interface turns out to depend systematically on the lattice mis‐ match. Charge transfer from the Heusler alloys (mainly the M 3d orbitals) to the Ti d_xy orbitals of the TiO₂ interface layer is found to gradually grow from M = Ti to Fe, resulting in an electron gas with increasing density of spin‐polarized charge carriers. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Band renormalization and spin polarization of MoS2 in graphene/MoS2 heterostructures

Transition metal dichalcogenides exhibit spin–orbit split bands at the K‐point that become spin polarized for broken crystal inversion symmetry. This enables simultaneous manipulation of valley and spin degrees of freedom. While the inversion symmetry is broken for monolayers, we show here that spin polarization of the MoS₂ surface may also be obtained by interfacing it with graphene, which induces a space charge region in the surface of MoS₂. Polarization induced symmetry breaking in the potential gradient of the space charge is considered to be responsible for the observed spin polarization. In addition to spin polarization we also observe a renormalization of the valence band maximum (VBM) upon interfacing of MoS₂ with graphene. The energy difference between the VBM at the Γ‐point and K‐point shifts by ～150 meV between the clean and graphene covered surface. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Fracture‐induced nanoscrolls from CVD‐grown monolayer molybdenum disulfide

We report a simple and effective way of fabricating molybdenum disulfide (MoS₂) nanoscrolls by self‐rolling up fractured monolayer CVD‐grown MoS₂ microflakes. Morphological results reveal that MoS₂ nanoscrolls are formed only at newly formed edges, owing to an orientation‐specific fracture behavior. Using Raman spectroscopy, we show that the E¹_2g Raman peak (A_1g peak) for MoS₂ nanoscrolls significantly red‐shifts (blue‐shifts), indicating structural change. The proposed mechanism is that the newly formed edges induced by fracture behavior self‐roll up to nanoscrolls to minimize the surface free energy, meanwhile, the serious lattice contradiction of upper sulfur plane controls the rolling directions. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Magnetoelectric oxide films for spin manipulation in graphene

The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr₂O₃ on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr₂O₃ films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Defect‐induced ferrimagnetism in the half‐metallic Co2CrAl and Co2CrSi compounds

Co₂CrAl and Co₂CrSi are amongst the most studied Heusler alloys due to their half‐metallic character. These compounds are also well‐known to present ferromagnetism with high Curie temperatures. We show using first‐principles calculations that the creation of Cr antisites (Cr atoms at the Co sites) induces ferrimagnetism in these compounds without destroying the half‐metallic character of these alloys. The reduction of the total spin moment causes lower external fields and thus smaller energy losses in realistic magnetoelectronic, also known as spintronic, devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Phase stability of Crn+ 1GaCn MAX phases from first principles and Cr2GaC thin‐film synthesis using magnetron sputtering from elemental targets

Ab‐initio calculations have been used to investigate the phase stability and magnetic state of Cr_{n+ 1}GaC_n MAX phase. Cr₂GaC (n = 1) was predicted to be stable, with a ground state corresponding to an antiferromagnetic spin configuration. Thin‐film synthesis by magnetron sputtering from elemental targets, including liquid Ga, shows the formation of Cr₂GaC, previously only attained from bulk synthesis methods. The films were deposited at 650 °C on MgO(111) substrates. X‐ray diffraction and high‐resolution transmission electron microscopy show epitaxial growth of (000?) MAX phase. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic non‐volatile flip‐flop with spin‐Hall assistance

A novel multi‐bit non‐volatile flip‐flop (NVFF) written by spin‐Hall‐assisted spin‐transfer torque (STT) is proposed. This NVFF employs perpendicular‐anisotropy MTJs and requires an STT current combined with a spin‐Hall current to write the data. Thanks to the assistance of spin‐Hall effect (SHE), the incubation delay required by the conventional STT switching can be eliminated to achieve fast operation. Our proposed NVFF uses multi‐bit architecture and shows high‐density and low‐energy advantages over hybrid NV/volatile FFs in the application of the NV register file. Sim‐ulation results show that the proposed spin‐Hall‐assisted NVFF saves ～31% storage density and ～32% energy dissipation compared with the conventional STT‐NVFF. Moreover, the reliability of MTJ barrier is enhanced due to the reduction of the write voltage. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Dual behavior of excess electrons in rutile TiO2

The behavior of electrons in the conduction band of TiO₂ and other transition‐metal oxides is key to the many applications of these materials. Experiments seem to produce conflicting results: optical and spin‐resonance techniques reveal strongly localized small polarons, while electrical measurements show high mobilities that can only be explained by delocalized free electrons. By means of hybrid functional calculations we resolve this apparent contradiction and show that small polarons can actually coexist with delocalized electrons in the conduction band of TiO₂, the former being energetically only slightly more favorable. We also find that small polarons can form complexes with oxygen vacancies and ionized shallow‐donor impurities, explaining the rich spectrum of Ti³⁺ species observed in electron spin resonance experiments. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Magnetic properties of R4Co3 (R = Gd, Y) compounds as observed by NMR

The zero field spin echo nmr spectrum of Gd₄Co₃ taken at 4.2 K is analysed and discussed on the basis of having magnetic moments of Co atoms at different structural lattice sites. For Y₄Co₃ the spin echo nmr spectrum taken as a function of the external field is discussed and explained on the basis of the coexistence of Co atoms carrying localized magnetic moments and paramagnetic Co atoms in this compound at determined structural sites.     

Spin–orbit stiffness of the spin‐polarized electron gas

In a spin‐polarized electron gas, Coulomb interaction couples the spin and motion degrees of freedom to build propagating spin waves. The spin wave stiffness S_sw quantifies the energy cost to trigger such excitation by perturbing the kinetic energy of the electron gas (i.e. putting it in motion). Here we introduce the concept of spin–orbit stiffness, S_so, as the energy necessary to excite a spin wave with a spin polarization induced by spin–orbit coupling. This quantity governs the Coulombic enhancement of the spin–orbit field acting of the spin wave. First‐principles calculations and electronic Raman scattering experiments carried out on a model spin‐polarized electron gas, embedded in a CdMnTe quantum well, demonstrate that S_so = S_sw. Through optical gating of the structure, we demonstrate the reproducible tuning of S_so by a factor of 3, highlighting the great potential of spin–orbit control of spin waves in view of spintronics applications. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Observation of insulating–insulating monoclinic structural transition in macro‐sized VO2 single crystals [Phys. Status Solidi RRL 5, No. 3, R107–R109 (2011)]

In our article, we reported the observation of monoclinic M2 to M1 structural phase transition in VO₂ single crystal near the temperature of ～49 °C. However, the re‐examination of Laue patterns reveals that previously defined monoclinic M1 and M2 phases can be interpreted as monoclinic M2 and triclinic T phases instead. Careful experimental geometry calibration and further refinement of the lattice parameter ratios and angles show that monoclinic M2 and triclinic T phases fit better with the experimental data. On the other hand, our previous misidentification of the insulating phases does NOT affect the conclusions of our article. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Birth of room‐temperature magnons and Raman line enhancement in ZnO nanostructures containing cobalt oxide

Cobalt (Co) addition and thermal annealing induced structural and vibrational properties of ZnO nanostructures were analysed. X‐ray diffraction pattern reveals that the nanostructures are in hexagonal wurtzite type and the formation of Co₃O₄. The Co ion induced morphology changes have been studied by high‐resolution scanning electron microscope images and energy dispersive spectroscopy measurements confirm the presence of Co ions. CoO‐related magnon excitation bands are emerged at room temperature for the Co‐added samples. There are no changes in the band positions of the Raman spectra of pure and Co‐added materials. Annealed sample exhibits the suppression of magnon bands and formation of Co₃O₄: ZnO composites. Raman line width and the electron phonon coupling constant are decreased with respect to the annealing temperature. The formation of Co₃O₄ : ZnO composite phases have further confirmed by infrared spectra. Copyright © 2013 John Wiley & Sons, Ltd.     

Inelastic electron lifetimes in simple metals: Influence of spin–orbit coupling

Inelastic single‐particle lifetimes due to electron–electron Coulomb interaction are computed ab‐initio for aluminium, silver, gold and copper using an all‐electron density‐functional calculation and a parameter‐free evaluation of the dielectric function. The novel feature is the inclusion of spin– orbit coupling in the wave functions. We show that, even in light metals, spin–orbit interaction is important for the calculation of inelastic lifetimes because it influences the scattering matrix elements. The importance of spin mixing on the lifetimes in aluminium is examined. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Observation of large low‐field magnetoresistance in spinel cobaltite: A new half‐metal

Low‐field magnetoresistance is an effective and energy‐saving way to use half‐metallic materials in magnetic reading heads and magnetic random access memory. Common spin‐polarized materials with low field magnetoresistance effect are perovskite‐type manganese, cobalt, and molybdenum oxides. In this study, we report a new type of spinel cobaltite materials, self‐assembled nanocrystalline NiCo₂O₄, which shows large low field magnetoresistance as large as –19.1% at 0.5 T and –50% at 9 T (2 K). The large low field magnetoresistance is attributed to the fast magnetization rotation of the core nanocrystals. The surface spin‐glass is responsible for the observed weak saturation of magnetoresistance under high fields. Our calculation demonstrates that the half‐metallicity of NiCo₂O₄ comes from the hopping e_g electrons within the tetrahedral Co‐atoms and the octahedral Ni‐atoms. The discovery of large low‐field magnetoresistance in simple spinel oxide NiCo₂O₄, a non‐perovskite oxide, leads to an extended family of low‐field magnetoresistance materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Nb‐based MXenes for Li‐ion battery applications

Li‐ion batteries depend critically on the stability and capacity of the electrodes. In this respect the recently synthesized two‐dimensional MXenes are promising materials, as they combine an excellent Li‐ion capacity with very high charging rates. We employ density functional theory to investigate the impact of Li adsorption on the structural and electronic properties of monolayer Nb₂C and Nb₂CX₂. The Li ions are predicted to migrate easily on the pristine MXene due to a diffusion barrier of only 36 meV, whereas larger diffusion barriers are obtained for the functionalized MXenes. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Giant Rashba spin splitting in Bi2Se3:Tl

First‐principles calculations are employed to demonstrate a giant Rashba spin splitting in Bi₂Se₃:Tl. Biaxial tensile and compressive strain is used to tune the splitting by modifying the potential gradient. The band gap is found to increase under compression and decreases under tension, whereas the dependence of the Rashba spin splitting on the strain is the opposite. Large values of α_R = 1.57 eV Å at the bottom of the conduction band (electrons) and α_R = 3.34 eV Å at the top of the valence band (holes) are obtained without strain. These values can be further enhanced to α_R = 1.83 eV Å and α_R = 3.64 eV Å, respectively, by 2% tensile strain. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Destruction of manganite La0.825Ba0.175MnO3 ferromagnetism caused by structural disordering

The methods of neutron diffraction, X‐ray and magnetic measurements were used to study the structural and magnetic states of disordered samples of manganite La_0.825Ba_0.175MnO₃. A disordered state was attained by irradiation with fast neutrons. It was established that the ferromagnet → spin glass‐like magnetic transformation takes place at a substitution concentration of ～6%. A magnetic state diagram of structurally disordered manganite was constructed. The magnetic state transformations are explained by the effect of localization of e _g‐electrons responsible for kinetic ferromagnetic exchange. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

First‐principles study of the electronic structure and the associated magnetism of carbon‐doped TiO2

Based on first‐principles calculations, the electronic structure and the associated magnetism of carbon‐doped rutile TiO₂ have been investigated in the frame of the generalized gradient approximation (GGA). We find that the carbon substitutional oxygen ions can induce a magnetic moment of about 2.0µ_B/C, but the carbon substitutional titanium cannot provide any magnetism. Graphics of the spin density show that the magnetism is from the structure distortion around the carbon substitutional oxygen ions in the (110) plane of primitive TiO₂. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

DFT and k · p modelling of the phase transitions of lead and tin halide perovskites for photovoltaic cells

3D hybrid organic perovskites, CH₃NH₃PbX₃ (X = halogen), have recently been used to strongly improve the efficiency of dye sensitized solar cells (DSSC) leading to a new class of low‐cost mesoscopic solar cells. CsSnI₃ perovskite can also be used for hole conduction in DSSC. Density functional theory and GW corrections are used to compare lead and tin hybrid and all‐inorganic perovskites. The room temperature optical absorption is associated to electronic transitions between the spin–orbit split‐off band in the conduction band and the valence band. Spin–orbit coupling is about three times smaller for tin. Moreover, the effective mass of relevant band edge hole states is small (0.17). The high temperature phase sequence of CsSnI₃ leading to the room temperature orthorhombic phase and the recently reported phases of CH₃NH₃MI₃ (where M = Pb, Sn) close to the room temperature, are also studied. Tetragonal distortions from the ideal cubic phase are analysed by a k · p perturbation, including spin–orbit effect. In addition, the non‐centrosymmetric phases of CH₃NH₃MI₃ exhibit a splitting of the electronic bands away from the critical point. The present work shows that their physical properties are more similar to conventional semiconductors than to the absorbers used in DSSC. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Product Operator Theory for Spin‐5/2 Nuclei: Application to 2D J‐Resolved NMR Spectroscopy

Product operator theory is a simple quantum mechanical method that has often been used to analytically describe multi‐pulse NMR experiments for weakly coupled spin systems. Considering the existence of 2D‐J resolved NMR spectra of aqueous solutions containing S = 5/2 nuclear spins, the product operator formalism has been extended to the weakly coupled IS (I = 1/2, S = 5/2) spin system. The evolution of I_x, I_y, I_xS_z and I_yS_z product operators under spin–spin coupling Hamiltonian are given here. The analytical results obtained are applied to the well‐known gated decoupler pulse sequence for heteronuclear 2D‐J resolved NMR spectroscopy.