Thermoelectric properties of S-substituted BiCuSeO at O sites:First-principles study

The conversion efficiency of a thermoelectric(TE)device is dependent on the dimensionless figure of merit defined as ZT=S^2σT/k,where T is absolute temperature.     

Lithium Doping Effect for Enhancing Thermoelectric and Optoelectronic Performance of Co2NbAl

JETP Letters - Cobalt-rich Heusler compounds represent a very interesting family of Heusler alloys owing to their performance in spintronics and magnetic devices. The quaternary Heusler, created by...     

Synergistically Enhancing Thermoelectric Performance of n-Type PbTe with Indium Doping and Sulfur Alloying

To achieve high-performance n-type PbTe-based thermoelectric materials, this work provides a synergetic strategy to improve electrical transport property with indium (In) element doping and reduces thermal conductivity with sulfur (S) element alloying. In n-type PbTe, In doping can tune the carrier density in the whole working temperature range, causing the carrier density to increase from 2.18 × 10¹⁹ cm⁻³ at 300 K to 4.84 × 10¹⁹ cm⁻³ at 823 K in Pb_0.98In_0.005Sb_0.015Te. The optimized carrier density can further modulate electrical conductivity and Seebeck coefficient, finally contributing to a substantial increase of power factor, and a maximum power factor increase from 19.7 µW cm⁻¹ K⁻² in Pb_0.985Sb_0.015Te to 28.2 µW cm⁻¹ K⁻² in Pb_0.9775In_0.0075Sb_0.015Te. Based on the optimally In-doped PbTe, S alloying is introduced to suppress phonon propagation by forming a complete solid solution, which could effectively reduce lattice thermal conductivity and simultaneously benefit carrier mobility to maintain high power factor. With S alloying, the minimum lattice thermal conductivity decreases from 0.76 Wm⁻¹ K⁻¹ in Pb_0.985Sb_0.015Te to 0.42 Wm⁻¹ K⁻¹ in Pb_0.98In_0.005Sb_0.015Te_0.88S_0.12. Combining the advantages of both In doping and S alloying, the peak ZT value and averaged ZT (ZT_ave) (300–873 K) are boosted from 1.0 and 0.60 in Pb_0.985Sb_0.015Te to 1.4 and 0.87 in Pb_0.98In_0.005Sb_0.015Te_0.94S_0.06.     

Titanium Doping to Enhance Thermoelectric Performance of 19-Electron VCoSb Half-Heusler Compounds with Vanadium Vacancies

The 19-electron VCoSb compounds are actually composites of an off-stoichiometric half-Heusler phase and impurities. Here the compositional adjustment is systematically studied in V_1−xCoSb to obtain single-phase V_0.955CoSb. Hall measurements suggest that such a V vacancy, as well as Ti doping, can optimize the carrier concentration, which decreases from ≈11.3 × 10²¹ cm⁻³ for VCoSb to ≈6.3 × 10²¹ cm⁻³ for V_0.755Ti_0.2CoSb. Low sound velocity contributes to the intrinsically low lattice thermal conductivity for VCoSb-based materials. The high Ti-dopant content results in enhanced point-defect scattering, which further decreases the lattice thermal conductivity. Finally, the optimized n-type V_0.855Ti_0.1CoSb is found to reach a peak ZT of ≈0.7 at 973 K. The work demonstrates that the VCoSb-based half-Heuslers are promising thermoelectric materials.     

Band Gap Modulation by Two-Dimensional h-BN Nanostructure

Physics of the Solid State - Two-dimensional hexagonal boron nitride (h-BN) as a graphene-like material was investigated due to its impending applications in electronics. The h-BN band gap Eg as an...     

中远红外傅里叶变换发光测量中双调制技术的实现与优化

对常规傅里叶变换发光测量方法进行改进,张入双调制技术,在迈克耳孙干涉仪一级调制的基础上,引入更高频率调制－锁相测量手段,通过这一测量方法的引入,并通过对调制频率和带通滤波器等测量参数的优化,基本消除了室温背景的黑体辐射在4μm－5μm以上区域对光致发光测量带来的严重干扰,在10μm长波红外波段得到了无室温背景黑体辐射影响的光致发光光谱,从而将光致发光测量推至5μm以上长波红外波段。     

Improvement of Photocatalytic Activity by Zn Doping in Cu2O

Physics of the Solid State - Degradation of organic pollutants got more attention for detoxification of water. In this paper, pure and Zn-doped Cu2O particles were successfully synthesized by water...     

Be掺杂对InGaAsN/GaAs量子阱性能的提高

InGaAsN/GaAs量子阱中进行铍(Be)元素重掺杂能显著提高其光学性质,并且发光波长发生了红移.X射线衍射摇摆曲线清楚地证实了铍掺杂抑制了InGaAsN(Be)/GaAs量子阱在退火过程中的应力释放.对比退火前,退火后的没有进行铍掺杂的量子阱样品的量子阱的X射线摇摆曲线衍射峰明显向GaAs衬底峰偏移;而对于掺铍的量子阱样品而言,这样的偏移要小很多.     

Carrier mobility and relaxation time in BiCuSeO

To obtain thermoelectric properties of materials, a constant relaxation time approximation is generally employed. By employing deformation potential theory, a derivation of relaxation time and carrier mobility of BiCuSeO system is proposed combining with density functional theory calculation. And the inter-valley scattering, acoustic phonon scattering and ionized impurity scattering were considered in the model. The calculated values of relaxation time and carrier mobility in BiCuSeO are in good agreement with the results of experiment. The results suggest that acoustic phonon scattering is in dominant and the constant relaxation time approximation is reasonable in lightly doped sample, and the ionized impurity scattering play a significant role in heavily doped system.     

Improvement of Nonlinear Modulation by Cascaded Mach-Zehnder Configuration

A two-stage cascaded Mach-Zehnder modulator is employed for the linear external modulation of a laser. The modulation electric fields are applied on the first and second stages in the Z and Y directions, respectively. Because of the inherent versatility of the adjustable modulation parameters, improved modulation perfor mances with a high modulation depth and a high linear response are demonstrated. When a modulation depth of 21 % is required, the ratios of the second and third harmonic terms to the fundamental term can be simultaneously achieved as low as 104 and 86.7 dB, respectively.     

The Improvement of Performance for Continuous-Variable Quantum Key Distribution with Imperfect Gaussian Modulation

Gaussian modulation is one of the key steps for the implementation of continuous-variable quantum key distribution (CVQKD) schemes. However, imperfection in the Gaussian modulation may introduce modulation noise that can deteriorate the performance of CVQKD systems. In this paper, we mainly investigate how to improve the performance of a CVQKD system from different aspects. First, we explore the several different origins, impacts and monitoring schemes for the modulation noise in detail. Then, we discuss the practical performance of a CVQKD system with an untrusted noise model and neutral party model, respectively. These analyses indicate that the neutral party model should be reasonably regarded as a general noise model, which will passively and greatly raise the performance of the system. Further, we propose a dynamic auto-bias control scheme to actively resist the modulation noise which comes from the drift of bias point of the amplitude modulator. Together these methods contribute to the improvement of the practical performance of CVQKD systems with imperfect Gaussian modulation.

     

氧化钇（铒,镱）的合成及上转换发光

采用均相沉淀,马弗炉煅烧的方法,合成了一系列Y2O3∶Er3＋,Yb3＋上转换发光材料.该类材料在波长为980 nm半导体激光器激发下发射出中心波长为564nm的绿色和662nm的红色上转换荧光,分别对应于Er3＋离子的4S3/2/2H11/2→4I15/2和4F9/2→4I15/2跃迁.探讨了不同合成条件对其上转换发光强度和波长的影响,发现沉淀时的pH值,煅烧温度和沉淀中Er3＋、Yb3＋的相对浓度对其发光有显著影响.     

In-Beam γ-Ray Studies of Band Structures in Ho151

We reported here the level structure in the ood proton nucleus Ho¹⁵¹. High spin states in Ho¹⁵¹ have been populated in the Sn¹²² (Cl³⁵, xyzγ) reaction. The level structure has been established up to an energy of 9.9 MeV and spin value I = 63/2. The systematic behavior of the level pattern of Ho¹⁵¹ nucleus is discussed in the context of the high-spin structure in the neighbouring nuclei. Most of the proposed level configurations can be explained by the coupling of h 11/2 protons to f 7/2 and/or h 9/2 neutrons.     

Ca掺杂对ZnO氧化物热学性能的影响

在密度泛函理论和线性响应的密度泛函微扰理论基础上的第一性原理计算的方法研究了Ca掺杂对纤锌矿结构氧化物ZnO热学参数和热学性能的影响。研究结果表明,Ca掺杂ZnO氧化物晶格a,b,c轴均有所增大;在计算温度区间,纯的ZnO和Ca掺杂的ZnO的晶格热容均随温度升高不断增大;Ca掺杂的ZnO具有较高的晶格热容;纯的ZnO和Ca掺杂的ZnO的晶格热容在最高温度900K分别达到16.5 Cal.mol-1K-1和31.7Cal.mol-1K-1。纯的ZnO和Ca掺杂的ZnO的德拜温度 均随温度升高不断增大,Ca掺杂的ZnO的德拜温度 均高于纯的ZnO。Ca掺杂在ZnO中引入了新的振动模式。Ca掺杂ZnO氧化物应该具有较高的晶格热导率。     

Ca掺杂对ZnO氧化物热学性能的影响

在密度泛函理论和线性响应的密度泛函微扰理论基础上的第一性原理计算的方法研究了Ca掺杂对纤锌矿结构氧化物ZnO热学参数和热学性能的影响。研究结果表明,Ca掺杂ZnO氧化物晶格a,b,c轴均有所增大;在计算温度区间,纯的ZnO和Ca掺杂的ZnO的晶格热容均随温度升高不断增大;Ca掺杂的ZnO具有较高的晶格热容;纯的ZnO和Ca掺杂的ZnO的晶格热容在最高温度900K分别达到16.5 Cal.mol-1K-1和31.7Cal.mol-1K-1。纯的ZnO和Ca掺杂的ZnO的德拜温度 均随温度升高不断增大,Ca掺杂的ZnO的德拜温度 均高于纯的ZnO。Ca掺杂在ZnO中引入了新的振动模式。Ca掺杂ZnO氧化物应该具有较高的晶格热导率。     

CoSb3纳米薄膜的制备与热电性能

通过对低压化学气相沉积制得的CoSb3纳米薄膜在300～800K温度范围内的热电性能测试,发现其电阻率较其他单晶CoSb3块状样品低一个量级,热导率值在1.08～4.05 Wm-1K-1之间,比单晶CoSb3低得多.这表明纳米结构导致热导率显著降低,最高热电优值在773K出现且为0.114.这种纳米薄膜材料在研制新型高效热电半导体方面板具应用前景.     

三材料线性掺杂石墨烯纳米条带场效应管性能

采用量子动力学模型研究单材料和三材料的石墨烯纳米条带场效应管(GNRFETs)在不同掺杂情况下的弹道输运特性,模型基于非平衡格林函数方程(NEGF)以及自洽的泊松方程的量子数值解.结果证明:三材料线性掺杂的石墨烯纳米条带场效应管(TL-GNRFET)不仅能够有效地抑制短沟道效应(SCE)和漏极势垒降低效应(DIBL),而且相对于其它几种结构而言,它有更好的亚阈值斜率以及更高的开关电流比.另外,还研究了非对称栅结构对石墨烯场效应管的影响,结果表明,当上栅和下栅同时向源端移动的时候,可以改善器件的电流开关比.     

计算机辅助声光调制实验的改进

针对声光调制实验,用MATLAB编写了可视化程序,建立了计算机与数字存储示波器之间的数据传输通道,实现了基于计算机辅助声光调制实验的数据自动采集和处理.提高了声光调制实验的自动化程度,使实验变得更加方便快捷.     

The decay of Ho and Ho

The disintegration characteristics of ^164mHo and ^164gHo have been studied using a high-resolution Ge(Li) spectrometer. Radioactive samples of ^164mHo and ^164gHo were obtained through the (n, 2n) reaction on spectroscopically pure holmium oxide with 14 MeV neutrons. The isomeric cross-section ratio for the yields of the ground and metastable states has been estimated to be 1.0±0.25. Gamma rays of 37.7 and 56.1 keV energy have been assigned to the decay of ^164mHo and 73.4 and 91.5 keV γ-rays are attributed to the decay of ^164gHo by electron capture and negaton emission, respectively. The branching ratio for the electron capture decay of ^164gHo to the levels in ¹⁶⁴Dy has been estimated accurately from the analysis of X-ray intensities. The results have been incorporated into a decay scheme.