Q-switching of a diode cladding-pumped Erbium Fibrelaser at 2.7 μm

Reliable Q-switched operation of a cladding-pumped 2.7m ZBLAN fibre laser in the range of the power limit of self-destruction is shown for the first time. The laser is pumped by a multimode diode. Q-switching is achieved by two different techniques: a rotating mirror and an acousto-optical modulator. Pulse widths of 500ns with the rotating mirror and 300ns (FWHM) with the acousto-optical modulator and pulse energies in the J range are achieved.     

Laser damage in silicon photodiodes

Thermal damage of silicon photodiodes exposed to intense optical radiation is investigated. Damage thresholds of Si photodiodes irradiated by 1.06m laser pulses are reported for values of irradiation time,, ranging from 10^–8 to 1s. Threshold laser irradiation produces visible microscopic damage and a permanent degradation in photoresponse. The loss of responsivity is associated with degradation of the detector diode characteristics due to laser-induced heating. The time and wavelength dependence agree with the predictions of a thermal model which treats a semi-infinite material irradiated by a Gaussian laser beam. The energy density thresholds are independent of for short irradiation times and asymptotically approach a limiting behaviour which increases as for long times. They are given by the empirical relationE ₀=65[1+217/tan^–1(258)^1/2] J cm^–2 for 1.06m radiation. The thresholds at short irradiation times of detectors damaged by 1.06m radiation are about 25 times larger than those of detectors exposed to 0.6943m radiation. The greater susceptibility at 0.6943m is attributed to a larger optical absorption coefficient.     

The paramagnetic state (μ+e−) in silicon and tellurium at high temperature

The paramagnetic state (⁺e^–) in Si and Te was observed in a longitudinal magnetic field. The mean lifetimes of these states were obtained: _Si = 1.45(3) s, _Te = 12.5(8) s at 290 K, _Te = 12(2) s at 250 K.     

Ar ion laser assisted chemical etching of via holes in tungsten sheets in air

Ar ion laser assisted chemical etching of 150 m thick annealed tungsten sheets in air is reported. The material removal mechanism involves local heating by the laser to temperatures in the range of 1000–1500 °C that causes rapid oxidation of the W to WO₃ which volatilizes readily. Holes with straight walls and slightly enlarged entrances near the surface were drilled with etch rates as high as 11.5 m/s at 13.8 W, and a minimum hole diameter of 21 m at 8.1 W. The diameters of the holes and the etch rates were measured and found to increase as a function of the laser power. It was found that by increasing the laser power above 11–12 W, no change was observed in the hole diameters which remained constant at about 31 m, whereas the etch rates continued to increase even faster than at low powers. Distinct adjacent holes of 25 m diameter could be drilled with their centers separated by as little as 60 m. This is therefore also the etching resolution in the present study.     

Основные соотношени я длн построения механических селект оров нейтронов

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Domain structure of cobalt whiskers

An experimental investigation is made into the domain structure of cobalt whiskers by the colloid technique. A new type of domain structure was found; the width of the domains is studied as a function of the thickness of the whisker. This dependence follows a two-thirds power law and does not agree with existing theories which predict a half power law.

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In conclusion the authors wish to thank V. Janovec and F. Kroupa for valuable remarks and A. Tahalová for help in growing the whiskers.     

New cascade laser transitions in CH2F2 pumped with the 9R32 line of a cw CO2 laser

New cascade laser transitions of¹²CH₂F₂ at 172.50m, 208.83m, 220.44m, 223.99m and 250.61m are reported. A waveguide FIR laser was pumped with a quasi cw¹²C¹⁶O₂ laser operating on the 9R32 line. Together with the already known lines at 184.3m, 196.1m and 235.9m, the laser lines can be assigned to rotational transitions in the ₉ vibrational band of¹²CH₂F₂ and to refill transitions of the vibrational ground state ₀.     

A note on the Watanabe theory of weak interactions

It is shown that according to the Watanabe theory of weak interactions a resonant scattering of electrons by protons must take place. The resonant energy depends on the massm _B of the intermediate boson. Form _B=2300m _e this energy is about 213 MeV in the centre of the mass system (c. m. s.). The energy width at resonance is 1·4 MeV.

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, . , , . _{m B}=2300_{m B} , 213 MeV -. 1,4 MeV.

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The author would like to thank Professor V. Votruba for suggesting this note and for valuable advice and help during the work.     

Experimental survey of the sticking problem in muon catalyzed dt fusion

The sticking process dt + n, which constitutes the most severe limit to the number of fusions which a muon can catalyze, is reviewed. Many attempts were made to determine by calculations and measurements the probability for initial sticking _s ⁰ (immediately after dt fusion) and for final sticking _s (after the came to rest). Previous results based on neutron disappearance rates and on the observation of -X-rays were controversial and also in some disagreement with theory. New data are reported from PSI on direct observation of final sticking, using a setup with the St. Petersburg ionization chamber. These data mark a significant improvement in reliability and may clarify questions concerning previous discrepancies. The new results is _s(0.56±0.04)%, lower than the theory prediction _s=(0.65±0.03)%, at medium density.     

Quantization of the Maxwell field in linear conformal invariant gauges

It is shown that the generalized Lorentz gauges provide all linear conformal invariant gauges, i.e. gauges such that A =0.     

The probability distribution of the velocities of gas molecules after collision with a rapidly moving rigid body

The above problem is met, for example, in the case of the collision of molecules of the atmosphere with an artificial earth satellite and leads to the problem of determining the probability distribution of the absolute value of the vector sum of a constant vector and a Maxwell vector (the latter being a vector, whose rectangular components are distributed normally, with the same standard deviation and mean value zero). The resultant probability density is given by equation (18), the complement to the distribution function by (24), the mean value by (27) and the variance by (31). These results are obtained by transforming the corresponding three-dimensional normal distribution to spherical co-ordinates and integrating over the co-ordinate angles and , which yields the required probability density; the other results are then obtained from it by the usual methods.

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, , (. . , ). (18), -(24), -(27) (31). , ; .

     

Final dt stickingω s using the “survived moun method”

A new direct measurement of the final dt sticking probability _s using a special data analysis called the survived muon method is presented. The data were obtained at PSI using a high pressure ionization chamber with H/D/T gas mixtures. The method can provide information on final sticking dt +n independent of theoretical models of stripping and initial sticking. It was found: _s=(0.57±0.07±0.02)%. The experiment and the analysis method are discussed in detail.     

Sputtering of solid argon by keV electrons

Thermochemical maskless etching of compound semiconductors (GaAs, InP, InSb, and GaP) has been performed by focused Ar-laser irradiation in chloride gas atmospheres. A controlled minimum linewidth of down to 0.6 m with a maximum etching rate of up to 13 m/s has been obtained. Minimum laser powers necessary for thermochemical etching in each of compound semiconductors were found to be 0.24, 0.56, and 0.06 W, corresponding to minimum local temperature rises of 190, 515, and 110°C for GaAs, InP, and InSb, respectively. Etching rates exhibited Arrhenius behavior with activation energies of 3.6–3.9 kcal/mole. Etching at excessively higher laser powers than those minimum powers was found, by microprobe photoluminescence measurements, to degrade the optical quality of the etched substrate.     

The influence op demagnetization,anisotropy and stress on the resonance condition of spin-wave resonance

Spin-wave resonance equations of motion, based on Valenta's model of a thin film, are derived on the basis of quantum mechanics. We start out from the Hamiltonian including Zeeman, exchange and dipolar interaction. Phenomenological terms respecting the influence of anisotropy and stress are introduced into the equations of motion and the resonance condition is derived. The influence of the above effects on the resonance condition is discussed and a comparison is made with experiment.

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ЛЮМИНЕСЦЕНЦИЯ КРИСТ АЛЛОВ AgCl

AgCl –180°. . , ( : =4640 Å, =5080 Å). , , . . - . –183°, =1,6. 10^–8%±10%.

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Luminescence of AgCl crystals

The luminescence of normal and deformed single crystals of AgCl of different thickness was measured at a temperature of –180°C. With deformed samples the decrease in intensity of the luminescence was measured. On the luminescence band of the above crystals we observed a fine structure for which the series rule could be used (edge of series =4640 Å, =5080 Å).The observed luminescence was explained by means of the exciton mechanism proposed by Matyá, i.e. annihilation of a localized exciton either on a cation vacancy or on a cation vacancy on a dislocation jog. The luminescence yield at –183°C, =1.6×10^–3%±10%, was measured by a photographic method.

     

Imaging and focusing of an atomic beam with a large period standing light wave

A novel atomic lens scheme is reported. A cylindrical lens potential was created by a large period ( 45 m) standing light wave perpendicular to a beam of metastable He atoms. The lens aperture (25 m) was centered in one antinode of the standing wave; the laser frequency was nearly resonant with the atomic transition 2³ S ₁–2³ P ₂ (=1.083 m) and the interaction time was significantly shorter than the spontaneous lifetime (100 ns) of the excited state. The thickness of the lens was given by the laser beam waist (40 m) in the direction of the atomic beam. Preliminary results are presented, where an atomic beam is focused down to a spot size of 4 m. Also, a microfabricated grating with a period of 8 m was imaged. We discuss the principle limitations of the spatial resolution of the lens given by spherical and chromatic aberrations as well as by diffraction. The fact that this lens is very thin offers new perspectives for deep focusing into the nm range.     

A DCN laser interferometer for electron density measurements of plasmas

The main characteristic of this interferometric system is such that the systems can be used for DCN laser (=195m, 190m) and also for HCN laser (=337m) by changing the work medium, regulating the temperature of tube wall and adjusting the optic path, without changing any optic element.     

Electric field effects on persistent spectral holes: Perylene in the polar polymer polyvinylbutyral

We investigated the effects of an electric field on a spectral hole burned in the inhomogeneously broadened S ₀–S ₁ transition of perylene in different samples of the polar polymer polyvinylbutyral (PVB) and in cellulose nitrate. The spectral hole is broadened and reduced in depth by the electric field. It was checked experimentally for perylene in PVB that the hole area remains constant when an electric field is applied. We determined the effective matrix-induced electric dipole moment differences * for perylene in different PVB samples and in cellulose nitrate. Within experimental accuracy the value of * is approximately independent of the composition of PVB and its water content. For perylene in cellulose nitrate the value of * is larger by a factor of 1.5 than in PVB. The results are discussed on the basis of a simple model for the electric field effect.     

Singularity theorems and the [General Relativity + additional matter fields] formulation of metric theories of gravitation

By using the [General Relativity + additional matter fields] formulation (which depends on a redefined metrich ) of metric theories of gravitation, the study of singularities characterized by incomplete nonspacelike geodesics is simplified, but may be used only if (at least) the non-spacelike geodesics of the original metricg are conserved under the transformation betweeng and the new metrich . In order that every class of geodesies of a diagonal Bianchi I metric correspond to the same class of geodesies of a diagonal metrich , it is necessary that the transformation between these two metrics be a constant (positive) conformal transformation. We analyse the implications of the previous results for the singularitiesg when the latter is a solution of theories with a quadratic or polynomial Lagrangian.     

The effect of microsegregation on the generation of dislocations in zinc single crystals

The applicability of Tiller's considerations on the production of dislocations is proved. The density of dislocations appearing during impurity microsegregation increases with increasing rate of growth as a consequence of the corresponding change in the effective distribution coefficient. The real value of C at the microsegregation boundaries is at least twice as great as the average value of the concentration of impurities in the crystal in question.

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. , , . C , .