Synthesis and near-infrared luminescence properties of LaOCl:Nd3+/Yb3+

Near-infrared emitting phosphors LaOCl:Nd³⁺/Yb³⁺ were prepared by the solid-state method, and their structures and luminescent properties were investigated by using X-ray diffraction and photoluminescence analysis, respectively. The studies shows that tetragonal LaOCl:Nd³⁺/Yb³⁺ can be synthesized by the solid-state reaction at 600 °C for 3 h. Upon 353 nm UV excitation, LaOCl:Nd³⁺/Yb³⁺ sample shows strong near-infrared emission lines in the region of 1060–1150 nm (corresponding to ⁴F_3/2 → ⁴I_J′ transition of Nd³⁺, J′ = 9/2, 11/2, 13/2, 15/2) and 980–1050 nm (corresponding to ²F_5/2 → ²F_7/2 transition of Yb³⁺). The decreasing emission intensity of Nd³⁺ with increasing doping concentration of Yb³⁺ proved the energy transfer in LaOCl:Nd³⁺/Yb³⁺. The possible near-infrared emission and energy transfer mechanism between Nd³⁺ and Yb³⁺, as well as the energy transfer efficiency of LaOCl:Nd³⁺/Yb³⁺ were discussed.     

Influence of heat treatment on field emission characteristics of boron nitride thin films

Boron nitride (BN) nanometer thin films are synthesized on Si (1 0 0) substrates by RF reactive magnetron sputtering. Then the film surfaces are treated in the case of the base pressure below 5 × 10⁻⁴ Pa and the temperature of 800 and 1000 °C, respectively. And the films are studied by Fourier transform infrared spectra (FTIR), atomic force microscopic (AFM) and field emission characteristics at different annealing temperature. The results show that the surface heat treatment makes no apparent influence on the surface morphology of the BN films. The transformations of the sample emission characteristics have to do with the surface negative electron affinity (NEA) of the films possibly. The threshold electric fields are lower for BN samples without heat-treating than the treated films, which possibly ascribed to the surface negative electron affinity effect. A threshold field of 8 V/μm and the emission current of 80 μA are obtained. The surface NEA is still presence at the heat treatment temperature of 800 °C and disappeared at temperature of 1000 °C.     

Hydrothermal synthesis and the enhanced blue upconversion luminescence of NaYF4:Nd3+,Tm3+,Yb3+

Nd³⁺, Tm³⁺ and Yb³⁺ co-doped NaYF₄ upconversion (UC) material was synthesized by the hydrothermal method. The structure of the sample was characterized by the X-ray diffraction, and its UC luminescence properties were investigated in detail. Under the 980 nm semiconductor laser excitation, its UC spectra exhibited distinct emission peaks at 451 nm, 475 nm and 646 nm respectively. On the basis of the comparison of UC spectra between NaYF₄:Nd³⁺,Tm³⁺,Yb³⁺ and NaYF₄:Tm³⁺,Yb³⁺, it was indicated that the existence of Nd³⁺ ion enhanced the blue emission intensity. The law of luminescence intensity versus pump power proved that the blue emission at 475 nm, and the red emission at 646 nm were the two-photon processes, while the blue emission at 451 nm was a three-photon process.     

Growth and characterization of CoSi2 films on Si (1 0 0) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi₂ film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360°C, fcc cobalt film grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600°C, Co film reacts with Si substrate and transforms into CoSi₂. The CoSi₂ films prepared by this way are characterized by XTEM, XPS and AFM.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Preparation of cadmium stannate films by spray pyrolysis technique

Cadmium stannate thin films were prepared by spray pyrolysis technique using cadmium acetate and tin(II) chloride precursors at substrate temperatures 450 °C and 500 °C. XRD pattern confirms the formation of orthorhombic (1 1 1) cadmium stannate phase for the film prepared at substrate temperature of 500 °C, whereas, films prepared at 450 °C are amorphous. Film formation does not occur at substrate temperature from 300 to 375 °C. SEM images reveal that the surface of the prepared Cd₂SnO₄ film is smooth. The average optical transmittance of ∼86% is obtained for the film prepared at substrate temperature of 500 °C with the film thickness of 400 nm. The optical band gap value of the films varies from 2.7 to 2.94 eV. The film prepared at 500 °C shows a minimum resistivity of 35.6 × 10⁻⁴ Ω cm.     

Phase mixture and anti-reflection window in visible of annealed beryllium-nitride thin films on silicon crystal

Beryllium-nitride (Be₃N₂) thin films were grown on silicon Si(1 1 1) substrates by pulsed laser deposition in a RIBER LDM-32 system, and characterized with in/ex situ XPS and SIMS. The structure of the films was analyzed with XRD. The films were further analyzed for surface topographic information with SEM and profilometry, and for optical properties with optical spectroscopy. It was observed that the material, prepared at room temperature and annealed at 700 °C for 2 h, had undergone a partial phase transition to a mixture of amorphous and crystalline phases, and the thin films showed a large anti-reflection window in the visible. Therefore, the annealed Be₃N₂ thin films would be potentially useful for stable electronic packaging with desired photonic features.     

Growth and characterization of indium oxide films

In₂O₃ films have been deposited using chemical spray pyrolysis technique at different substrate temperatures that varied in the range, 250–450 °C. The structural and morphological properties of the as-deposited films were studied using X-ray diffractometer and scanning electron microscope as well as atomic force microscope, respectively. The films formed at a temperature of 400 °C showed body-centered cubic structure with a strong (2 2 2) orientation. The structural parameters such as the crystallite size, lattice strain and texture coefficient of the films were also calculated. The films deposited at a temperature of 400 °C showed an optical transmittance of >85% in the visible region. The change of resistivity, mobility, carrier concentration and activation energies with the deposition temperature was studied. The highest figure of merit for the layers grown at 400 °C was 1.09 × 10⁻³ Ω⁻¹.     

Characterization of LSGM films obtained by electrophoretic deposition (EPD)

The application of the electrophoretic deposition (EPD) technique to the preparation of high quality electrolyte films for intermediate temperature solid oxide fuel cells (IT-SOFCs) was investigated. Films of La_0.83Sr_0.17Ga_0.83Mg_0.17O_2.83 (LSGM) were deposited on Pt and La_0.8Sr_0.2MnO₃ (LSM) substrates from suspensions in acetone/ethanol (3:1 by volume) mixture solvent and sintered at 1300 °C. Pt supported LSGM films, 10–20 μm thick, exhibited good adhesion to the Pt substrate, well-distributed microporosity and some surface roughness. LSM supported films exhibited cracking after sintering at 1300 °C for 3 h. Up to 900 °C the bulk conductivity of the Pt supported LSGM film showed the same behaviour of LSGM pellet (E_a = 0.93 eV and 0.99 eV, respectively). The LSGM film exhibited lower bulk electrical conductivity than the latter (4.1 × 10^− 3 and 4.4 × 10^− 2 Ω^− 1 cm^− 1, respectively, at 700 °C). This difference should be ascribed to the slight Ga depletion in the LSGM film. An important issue remains the selection of adequate electrode for LSGM electrolyte films.     

Fast and wide-band response infrared detector using porous PZT pyroelectric thick film

Porous lead zirconate titanate (PbZr_0.3Ti_0.7O₃, PZT30/70) thick films and detectors for pyroelectric applications have been fabricated on alumina substrates by screen-printing technology. Low temperature sintering of PZT thick films have been achieved at 850 °C by using Li₂CO₃ and Bi₂O₃ sintering aids. The microstructure of PZT thick film has been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The dielectric properties were measured using HP 4284 at 1 kHz under 25 °C. The permittivity and loss tangent of the thick films were 94 and 0.017, respectively. Curie temperature of PZT thick film was 425 °C as revealed by dielectric constant temperature measurement. The pyroelectric coefficient was determined to be 0.9 × 10⁻⁸ Ccm⁻² K⁻¹ by dynamic current measurement. Infrared detector sensitive element of dual capacitance was fabricated by laser directly write technology. Detectivity of the detectors were measured using mechanically chopped blackbody radiation. Detectivity ranging from 1.23 × 10⁸ to 1.75 × 10⁸ (cm Hz^1/2 W⁻¹) was derived at frequency range from 175.5 Hz to 1367 Hz, and D^*’s −3 dB cut-off frequency bandwidth was 1.2 kHz. The results indicate that the infrared detectors based on porous thick films have great potential applications in fast and wide-band frequency response conditions.     

YBCO films buffered by pyrochlore Nd2Mo2O7 layer on YSZ substrates by chemical solution deposition

A chemical solution deposition process was used to grow epitaxial Nd₂Mo₂O₇ (NMO) buffer layers on YSZ substrates to produce YBa₂Cu₃O_7?δ (YBCO) coated conductors. The NMO precursor solution prepared using metal acetylacetonates was spin-coated onto single crystal YSZ substrate of 10 mm × 10 mm in size at 3000 rpm for 30 s and heat-treated at 1000 °C for 2 h in Ar after calcinated at 550 °C for 1 h. The YBCO film was deposited by TFA-MOD route on top of the NMO/YSZ architecture. The phase purity and the crystalline orientation of NMO and YBCO films were evaluated by X-ray diffraction (XRD). Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to observe their microstructure and their surface roughness. The critical current density (J_c) of YBCO film on NMO/YSZ is 1.8 MA/cm² at 77 K in self-field, which indicates that the Nd₂Mo₂O₇ is a potential buffer for YBCO coated conductor.     

Effect of annealing on the magnetic properties of Cu-capped ultrathin Co films

We report the effect of intermixing of Cu on the magnetic properties of ultrathin Co films deposited on Si(1 0 0). Rutherford backscattering was employed to determine the extent of intermixing, which increased from 7% in an as-grown sample to nearly 23% when annealed at 400 °C. The as-grown sample showed a higher value of magnetization of 530 emu/cm³, which dropped to 20 emu/cm³ on annealing at 400 °C. The low temperature magnetization behavior of the as-grown Co films showed the presence of both positive and negative exchange bias due to the formation of antiferromagentic domains in parallel with ferromagnetic domains. This behavior is explained using the Malozemoff Random Field Model, which predicted values of exchange bias closely matching the present experimental findings.     

The unusual variations of photoluminescence and afterglow properties in monoclinic ZrO2 by annealing

The raw ZrO₂ is annealed at 600–1550 °C for 6 h. It is found that the emission at 492 nm increases greatly when the annealing temperature is higher than 1200 °C and its afterglow shows a small improvement at 1200–1450 °C and a large enhancement after annealing at 1550 °C. The results that are obtained indicate that the impurity Ti⁴⁺ in ZrO₂ is efficiently reduced to Ti³⁺ when the temperature is higher than 1200 °C, and the increase of Ti³⁺ centers contributes to the large improvement of emission at 492 nm. The thermoluminescence shows that at least two types of traps with different depths (0.65 eV and 1.46 eV) corresponding to oxygen vacancies exist in monoclinic ZrO₂. After annealing at 1200–1450 °C, some new trap clusters related to oxygen vacancies and Ti³⁺ form and causes the small improvement of afterglow at 1200–1450 °C. The large improvement of afterglow after annealing at 1550 °C originates from the sharp increase of proper shallow traps (0.65 eV) in ZrO₂. Accordingly, we present the feasible interpretations and luminescence mechanisms of monoclinic ZrO₂ for our observations.     

Characterization on electron beam evaporated α-MoO3 thin films by the influence of substrate temperature

Electrochromic molybdenum oxide (MoO₃) thin films were prepared by electron beam evaporation technique using the dry MoO₃ pellets. The films were deposited on glass and fluorine doped tin oxide (SnO₂:F or FTO) coated glass substrates at different substrate temperatures like room temperature (RT, 30 °C), 100 °C and 200 °C. The influence of substrate temperature on the structural, surface morphological and optical properties of the films has been studied. The X-ray diffraction analysis showed that the films are having orthorhombic phase MoO₃ (α-MoO₃) with 〈1 1 0〉 preferred orientation. The laser Raman scattering spectrum shows the polycrystalline nature of MoO₃ films deposited at 200 °C. The Raman-active band at 993 cm⁻¹ is corresponding to Mo–O stretching mode that is associated with the unique character of the layered structure of orthorhombic MoO₃. Needle—like morphology was observed from the SEM analysis. The energy band gap of MoO₃ films was evaluated which lies between 2.8 and 2.3 eV depending on the substrate temperature and substrates. The decrease in band gap value with increasing substrate temperature is owing to the oxygen-ion vacancies. The absorption edge shift shows the coloration effect on the films.     

Structural and magnetic properties of thin epitaxial Fe films on (1 1 0) GaAs prepared by metalorganic chemical vapor deposition

Iron films have been grown on (1 1 0) GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition at substrate temperatures (T_s) between 135°C and 400°C. X-ray diffraction (XRD) analysis showed that the Fe films grown at T_s between 200°C and 330°C were single crystals. Amorphous films were observed at T_s below 200°C and it was not possible to deposit films at T_s above 330°C. The full-width at half-maximum of the rocking curves showed that crystalline qualities were improved at T_s above 270°C. Single crystalline Fe films grown at different substrate temperature showed different structural behaviors in XRD measurements. Iron films grown at T_s between 200°C and 300°C showed bulk α-Fe like behavior regardless of film thickness (100–6400 Å). Meanwhile, Fe films grown at 330°C (144 and 300 Å) showed a biaxially compressed strain between substrate and epilayer, resulting in an expanded inter-planar spacing along the growth direction. Magnetization measurements showed that Fe films (>200 Å) grown at 280°C and 330°C were ferromagnetic with the in-plane easy axis along the [1 1 0] direction. For the thinner Fe films (⩽200 Å) regardless of growth temperature, square loops along the [1 0 0] easy axis were very weak and broad.     

In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study

We have studied CO interaction with SiO₂/Si system at high temperature (~ 1100 °C) and 350 mbar by core-level photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a clear change upon CO treatment. Shifted components are attributed to formation of SiC. This is confirmed by TEM imaging which further shows that the silicon carbide is in the form of nano-crystals of the 3C polytype. Photoemission spectroscopy moreover reveals the formation of silicon oxicarbide which could not be evidenced by other methods. Combining these results with previous Nuclear Resonance Profiling study gives a deeper insight into the mechanisms involved in the nanocrystals growth and especially for the reaction equation leading to SiC formation. We show that CO diffuses as a molecule through the silica layer and reacts with the silicon substrate according the following reaction: 4 CO + 4 Si → SiO₂ + 2SiC + SiO₂C₂.     

Comparative study on structural and optical properties of ZnO thin films prepared by PLD using ZnO powder target and ceramic target

Zinc oxide thin films have been obtained in O₂ ambient at a pressure of 1.3 Pa by pulsed laser deposition (PLD) using ZnO powder target and ceramic target. The effect of temperature on structural and optical properties of ZnO thin films was investigated systematically by XRD, SEM, FTIR and PL spectra. The results show that the best structural and optical properties can be achieved for ZnO thin film fabricated at 700 °C using powder target and at 400 °C using ceramic target, respectively. The PL spectrum reveals that the efficiency of UV emission of ZnO thin film fabricated by using powder target is low, and the defect emission of ZnO thin film derived from Zn_i and O_i is high.     

Characterization of Laves phase in Crofer 22 H stainless steel

This study investigated the effect of annealing temperature on the precipitation behavior of Crofer^® 22 H at 600 °C, 700 °C, and 800 °C. The grain size distribution, precipitate phase identification, and microstructure were analyzed using electron backscatter diffraction (EBSD) and energy dispersive X-ray spectroscopy (EDS). The morphology of Laves phase (Fe,Cr,Si)₂(Nb,W) precipitates having the Cr₂Nb structure changed from strip-like to needle-shaped as the annealing temperature was increased. The precipitates of the Laves phase also shifted from the grain boundaries to the grain interiors when the temperature was increased. However, the average grain size (150 μm) of the ferritic matrix did not significantly change at 600 °C, 700 °C, and 800 °C for 10 h.     

Field-assisted sustainable O− ion emission from fluorine-substituted 12CaO·7Al2O3 with improved thermal stability

We examined the electric field-assisted thermionic emission of atomic oxygen radical anion (O^?) in a vacuum from fluorine-substituted derivatives of 12CaO·7Al₂O₃ (C12A7) with a composition of (12 ? x)CaO·7Al₂O₃·xCaF₂ (0 ≤ x ≤ 0.8). Unsubstituted C12A7 easily decomposed into 5CaO?3Al₂O₃ (C5A3) and 3CaO?Al₂O₃ (C3A) above 830 °C during the emission experiment in a vacuum. The decomposition temperature range became narrower as the amount of F^? ion substitution increased, e.g. the sample with x = 0.4 kept a single phase after the emission experiment at 900 °C. The emitted anionic species from the x = 0.4 sample were dominated by O^? ions (～ 92%) together with a small amount of O₂^? ions (～ 4%) and F^? ions (～ 4%). The absence of an O₂ gas supply to the opposite side of the emission surface led to a nearly steady co-emission of O^? ions and electrons with a ratio of < 1/1. The O₂ gas supply markedly enhanced the O^? ion emission, and suppressed the electron emission. A sustainable and high-purity O^? ion emission with a current density of 11 nA cm^? 2 was achieved at 830 °C with the supply of 40 Pa O₂ gas. The similarity in these emission features to the unsubstituted C12A7, together with the improved thermal stability demonstrates that the F^? ion-substituted C12A7 is a promising material for higher intensity O^? ion emission at higher temperatures.