Improvement of the oxidation behavior of Ti1-xAlxN hard coatings by optimization of the Ti/Al ratio

The oxidation behavior of cubic Ti_1-xAl_xN films was improved by decreasing the Ti/Al ratio from 50/50 in the direction of the phase transition between cubic and hexagonal structure. Metastable, polycrystalline, single-phase Ti_1-xAl_xN films were deposited on high speed steel (HSS) substrates by reactive magnetron sputtering ion plating (MSIP). The composition of the bulk was determined by electron probe microanalysis (EPMA), the crystallographic structure by thin film X-ray diffraction (XRD). A Ti_1-xAl_xN film with a Ti/Al atomic ratio of 38/62 was deposited in cubic NaCl structure, whereas a further decrease of the Ti/Al ratio down to 27/73 led to a two-phase film with both cubic and hexagonal constituents. The Ti_0.38Al_0.62N film was oxidized in synthetic air for 1 h at 800?°C. The oxidic overlayer was analyzed by X-ray photoelectron spectroscopy (XPS) sputter depth profiling, EPMA crater edge linescan analysis, and secondary neutrals mass spectroscopy (SNMS). Scanning electron microscopy (SEM) micrographs of the cross sectional fracture were taken for morphological examination. With higher Ti content, the Ti_1-xAl_xN formed a TiO_2-x rich sublayer beneath an Al₂O₃ rich toplayer, whereas the oxide layer on the Ti_0.38Al_0.62N film consisted of pure Al₂O₃. The thickness of the oxide layer was determined to 60–80 nm, about a quarter of the oxide layer thickness detected on Ti_0.5Al_0.5N films. The absence of a TiO_2-x sublayer was also confirmed by XRD. The results show a distinct improvement of the oxidation resistance of cubic Ti_1-xAl_xN films by increasing the Al content from x = 0.5 to 0.62, whereas a further increase leads to the hexagonal structure, which is less suitable for tribological applications due to its tendency to form cracks during oxidation.     

Preparation of polycrystalline Ti-Al-O films by magnetron sputtering ion plating: constitution, structure and morphology

Ti-Al-O layers were deposited on Si-<100> wafers at 500 °C by means of reactive magnetron sputtering ion plating (R-MSIP). An Al-target was sputtered in rf-mode and a Ti-target in dc-mode simultaneously by an oxygen/argon plasma. The influence of the Al- and Ti-sputter powers on composition, structure, and morphology of the Ti-Al-O layers and the binding states of the components were investigated. The analysis with EPMA, XPS, AES and TEM yielded the following results: Ti-Al-O coatings with different Ti, Al, and O contents in the range of TiO₂ to Al₂O₃ were grown. TEM structure analysis revealed: the pure TiO₂ film consisted of the tetragonal phases rutile and anatase; the two structures were found in the titanium-rich Ti-Al-O film, too, but with significant smaller lattice constants. The aluminium-rich Ti-Al-O film displayed the same cubic structure of γ-Al₂O₃ as determined for the pure Al₂O₃ film, but the lattice constant is significant lower. Evaluation of the TEM pattern of the film with a Ti/Al ratio of 0.8 indicates a hexagonal structure with lattice constants similar to those of κ′-Al₂O₃. All films are nanocrystalline and not textured. Received: 24 June 1996 / Revised: 27 December 1996 / Accepted: 4 January 1997     

Insight into Al existing form and its role on microstructure and properties of Cr1−xAlxN films

A series of Cr_1?xAl_xN (where x denotes the atom fraction of Al in Cr_1?xAl_xN film) films with different Al contents have been deposited by unbalanced reactive magnetron sputtering technique. The chemical composition, microstructure, surface morphology, cross‐sectional structure, mechanical properties, thermal stability and tribological properties of the deposited films were studied by means of different techniques. It is found that with the increase of Al doping, the Al atoms either substitute the Cr atoms or occupy the interstitial sites in the CrN crystal lattice firstly, and when the Al doping content exceeds the solid solubility, superfluous Al atoms then exist in the form of amorphous or nanocrystal state in the films. Meanwhile, the grain size becomes smaller, and the microstructure gets denser because the Al doping leads to multiple crystal orientations and inhibits the grain growth. The Al doping induced solid solution hardening and grain boundary effects contribute to the high hardness of CrAlN films, and the dense structure as well as interstitial solid solution of Al, which can block the diffusion channel, endows the CrAlN films good oxidation resistance. Besides, a small amount of free Al existing in the films is favorable to improve the thermal stability without obvious loss of hardness. Finally, the relatively high hardness and good thermal stability make the Cr_0.29Al_0.71N film has relatively good tribological properties than CrN film under a wide temperature range, which extends the operating temperature of the CrN films in some fields. Copyright © 2015 John Wiley & Sons, Ltd.     

Comparison of properties of titanium aluminium nitride film produced by using two different types of Ti–Al target

This work aims to study the influence of two different types of Ti–Al target (sintered and melted) which have same nominal composition (50 at% Ti, 50 at% Al) on the properties of thin films coated by using arc ion plating (AIP) method. The hardness of the melted target was of higher value than that of the sintered target. The property of the film is related to the microstructure and phase analysis of both types of target that have quite different phases. Ti and Al metals were found as major phases and TiAl₂ as minor phase in the sintered target but only TiAl compound was found in the melted target. After film coating at the same operation parameters, it was found that although the phase structures of the sintered and melted targets were quite different, the coated thin films using these targets showed the same phase structure of Ti_0.5 Al_0.5 N. However, the microstructure of films coated by using the sintered target showed higher density of droplets and pores than those of film produced by using the melted target. As a result, the hardness and adhesion strength of thin film produced by using the melted target were slightly higher than those values of film produced by using the sintered target. Copyright © 2009 John Wiley & Sons, Ltd.     

Oxidation Behaviour of PACVD-(Ti,Al)N Wear Resistance Layers

 Sputtered (Ti,Al)N hard coatings are successfully used for dry high speed cutting. These films show a lower oxidation rate than TiN or TiC coatings. In our work (Ti,Al)N films were deposited on WC-6%Co substrates at a temperature of 490°C by plasma-assisted chemical vapour deposition (PACVD) using a gas mixture of TiCl₄/AlCl₃/N₂/Ar/H₂. Investigation of microstructure, crystalline structure and chemical composition was carried out using SEM, WDXS, TEM, AES and XRD techniques. The chemical composition of the deposited films showed a Al to Ti ratio of 1.33. The film thickness was 5.5 μm. Films showed a fine crystalline size, the metastable fcc crystal structure and a columnar growth. The film surface was under low compressive stress up to several 100 MPa. For (Ti,Al)N/WC-Co compounds the oxidation behaviour up to 1100°C (high temperature range) was studied. Therefore, samples were annealed or rapidly heated in air and under high vacuum condition using the laser shock method. The results show decomposition of the (Ti,Al)N structure to the TiN and the AlN phases at temperature values above 900°C. Heating in air causes growing of a thin aluminum oxide layer at the film surface, which is a barrier for further oxygen diffusion to the alumina-film boundary. Additionally, at temperatures above 900°C oxidation of the WC-6%Co substrate surface was obtained in regions of opened cracks and film delamination.     

室温下制备以{211}晶面为主的Ti1-xVxO2薄膜及其可见光催化性能

以金属Ti和V作为靶材,采用直流反应共溅射技术在室温下制备了以{211}晶面为主的锐钛矿相Ti_1-xV_xO₂薄膜,研究了不同V靶功率对Ti_1-xV_xO₂薄膜的薄膜成分、晶相结构和可见光催化性能的影响。研究表明,Ti_1-xV_xO₂薄膜的晶相结构为锐钛矿相,择优取向为(211),而结晶度受V靶功率的影响。随着V靶功率的增加,薄膜中V元素含量逐渐增加,同时,晶粒和沉积速率也逐渐增加。另外,当V靶功率为150 W时,薄膜的表面粗糙度值有一个最大值。V的掺杂导致薄膜的能带间隙变窄,对光的吸收向可见光区偏移,从而有效地改善了薄膜的可见光催化能力。当V靶功率为150 W时,Ti_1-xV_xO₂薄膜的能带间隙值为 2.82 eV,其在2 h的可见光照射下分解了80%的RhB染料。这被归结于能带间隙窄,高能晶面{211}和结晶度高的共同作用。     

Influence of thermal annealing on the microstructure,hardness and corrosion behavior of TiAlSiCuN nanocomposite films

Nanocomposite TiAlSiCuN films were deposited on high speed steels by filtered magnetic arc ion plating. Detailed properties of the films annealed at various temperatures are studied. After thermal annealing at different temperatures ranging from 400 to 800 °C, changes in the film micro‐structure, chemical and phase composition, surface morphology, hardness and polarization curve properties were systematically characterized by X‐ray diffraction, X‐ray photoelectron spectroscopy, scanning electron microscopy, nano‐indenter and electrochemical workstation, respectively. It was found that the TiAlSiCuN films could be fully oxidized at 800 °C, Al and Ti atoms all diffused outwards and formed dense protective Al₂O₃ and TiO₂ layer. Simultaneously, the TiAlN phase gradually disappeared. The films annealed at 400 °C obtained the highest hardness because of the certain grain growth and little generated oxides. Besides, the certain formation of dense protective Al₂O₃ layer made the TiAlSiCuN film annealed at 600 °C present the least corrosion current density and the corrosion voltage. Copyright © 2016 John Wiley & Sons, Ltd.     

Morphology, structure and constitution of metastable single-phase Ti1-xAlxN films grown by reactive MSIP

Metastable, single phase, polycrystalline Ti_1–x Al _x N hard layers were deposited on HSS-substrates with reactive magnetron sputtering ion plating (MSIP). The substrate temperature was 400 °C, the bias –60 V, the argon pressure 1.2 Pa and the sputter power 6 W cm^–2. Compound targets with a Ti:Al ratio of 75/25, 50/50 and 25/75, expressed in at-%, were sputtered. The nitrogen reactive gas pressure during sputtering was 8.4 × 10^–2 Pa for the 7525 target and 1.08 × 10^–1 Pa for the 5050 and 2575 targets. The Ti_1–x Al _x N layers grew with x=0.26, 0.54 and 0.75, as determined with EPMA. Thin film XRD and HEED structure analysis showed that the Ti_0.74Al_0.26N layer had grown as B1 structure (a₀0.4214 nm) with [211] texture, the Ti_0.46Al_0.54N layer likewise as B1 structure (a₀0.4154) with [111] texture, but the Ti_0.25Al_0.75N as B4 structure (a₀0.317 nm and c₀0.5014 nm) with [110] texture. Pronounced columnar growth was observed with HR-SEM in the fractured surface of the cubic layers. The mean grain size, and consequently the surface roughness, diminished with increasing Al-content of the layer.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

On the structure of (Ti, Al)N-PVD coatings

Thin films of the ternary system Ti---Al---N, produced by PVD magnetron sputtering, show excellent wear-resistance and microhardness. It could be proved that a composition of the form (Ti, Al)N grows up a TiN lattice. Up in a 30 at.% aluminium can be solved in this lattice with decreasing lattice parameters. The ternary H-phase Ti₂AlN has not been deposited as the deposition temperatures are too low.     

A Non-Hydrolytic Sol-Gel Approach for the Preparation of Mg x Al2(1−x)Ti(1+x)O5 Powders

The study of non-hydrolytic reactions for the synthesis of Mg _x Al_2(1?x)Ti_(1+x)O₅ solid solution with x = 0.6 is reported. The reagents chosen were Al(OsBu)₃, Ti(OiPr)₄, TiCl₄ and Mg(NO₃)₂·6H₂O in toluene. The reactions were followed using ¹³C Nuclear Magnetic Resonance (NMR) spectroscopy. Sol-gel synthesized powders were calcined in air at 300, 500, 1000, and 1200°C for 1 h. The powders were analysed by X-Ray Diffraction (XRD) demonstrating the formation of a Mg_0.6Al_0.8Ti_1.6O₅ phase in samples treated at the higher calcination temperature.     

室温下制备以{211}晶面为主的Ti1-xVxO2薄膜及其可见光催化性能

以金属Ti和V作为靶材,采用直流反应共溅射技术在室温下制备了以{211}晶面为主的锐钛矿相Ti_1-xV_xO₂薄膜,研究了不同V靶功率对Ti_1-xV_xO₂薄膜的薄膜成分、晶相结构和可见光催化性能的影响。研究表明,Ti_1-xV_xO₂薄膜的晶相结构为锐钛矿相,择优取向为(211),而结晶度受V靶功率的影响。随着V靶功率的增加,薄膜中V元素含量逐渐增加,同时,晶粒和沉积速率也逐渐增加。另外,当V靶功率为150W时,薄膜的表面粗糙度值有一个最大值。V的掺杂导致薄膜的能带间隙变窄,对光的吸收向可见光区偏移,从而有效地改善了薄膜的可见光催化能力。当V靶功率为150W时,Ti_1-xV_xO₂薄膜的能带间隙值为2.82eV,其在2h的可见光照射下分解了80%的RhB染料。这被归结于能带间隙窄,高能晶面{211}和结晶度高的共同作用。     

Microstructural and physicochemical study of the buried Fe/AlGaAs(100) interface by transmission electron microscopy and x‐ray emission spectroscopy

Among the magnetic metal/semiconductor contacts, the Fe/GaAs system has been widely studied owing to its potential applications in electronic devices. In contrast, there are not many studies concerning the Fe/Al_xGa_1?xAs contact, and in particular there are no reports concerning the changes induced in the interfacial zone by the presence of Al. In this work, thin polycrystalline iron films were deposited by ion beam sputtering at room temperature on a 300 nm thick Al_0.25Ga_0.75As layer grown by molecular beam epitaxy onto GaAs(001). X‐ray diffraction analysis showed that the iron films are polycrystalline, and indications of a (002) texture of the film were observed. The fine scale analysis of the interface was achieved by high‐resolution transmission electron microscopy (HRTEM) observations, the results of which are compared with the physicochemical information obtained from electron‐induced x‐ray emission spectroscopy, by analysing the Al 3p valence states at the Fe/Al_xGa_1?xAs interface. The HRTEM experiments on cross‐section samples indicate that the interfacial zone between iron and AlGaAs is limited to <1.5 nm in thickness. X‐ray emission spectroscopy showed the presence of Al atoms in an FeAl‐like environment at the interface, and the existence of wrong bonds and point defects. The estimated width of the perturbed interface (2.0 ± 0.5 nm) is in agreement with the HRTEM results. Copyright © 2003 John Wiley & Sons, Ltd.     

Tailoring of morphology and crystal structure of nanomaterials in MgO–TiO2 system by controlling Mg:Ti molar ratio

The morphological manipulation and structural characterisation of TiO₂?CMgO binary system by an aqueous particulate sol?Cgel route were reported. Different crystal structures including pure MgTiO₃, mixtures of MgTiO₃ and TiO₂ and mixtures of MgTiO₃ and Mg₂TiO₄ were tailored by controlling Mg:Ti molar ratio and annealing temperatures as the processing parameters. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) revealed that all compounds crystallised at the low temperature of 500?°C. Furthermore, it was found that the average crystallite size of the compounds depends upon the Mg:Ti molar ratio as well as the annealing temperature, being in the range 3?C5?nm at 500?°C and around 6?nm at 700?°C. Field emission scanning electron microscope (FE-SEM) analysis revealed that the deposited thin films had nanocrystalline structure with the average grain size of 25?C30?nm at 500?°C depending upon the Mg:Ti molar ratio. Moreover, atomic force microscope (AFM) images presented that the thin films had a hill-valley like morphology made up of small grains.     

Weitere magnetische Untersuchungen an Ti3−xMxO5-Phasen (M = Al3+, Fe2+, Mn2+, Mg2+) mit einem Beitrag über CrTi2O5

Additional Magnetic Examinations of Ti_3?xM_xO₅-Phases (M = Al³⁺, Fe²⁺, Mn²⁺, Mg²⁺) with a Contribution about CrTi₂O₅ Ti_3?xM_xO₅ was prepared with M = Al³⁺, Fe²⁺, Mn²⁺, and Mg²⁺. Die magnetic properties of this phases were examinated by the Faraday method in respect to the temperature. The well known magnetic effect of Ti₃O₅ near 450 K is shifted to lower degrees if Ti is replaced by Al, Fe, Mn, or Mg. Compared to Ti_3?xV_xO₅ and Ti_3?xCr_xO₅ the stability of the low temperature-form of Ti₃O₅ is much more reduced in Ti_3?xM_xO₅ (M = Al, Fe, Mn, Mg). The crystal structure investigation of CrTi₂O₅ explained the anomalous behaviour of the Cr³⁺ and V³⁺ doped Ti₃O₅.     

Structure and voltage tunable dielectric properties of sol–gel derived Bi1.5MgNb1.5O7 thin films

Bi_1.5MgNb_1.5O₇ (BMN) thin films were fabricated on Au/Ti/SiO₂/Si(100) substrates using a sol?Cgel spin coating process. Thermo decomposition of the BMN precursor gel was discussed. The structures, morphologies, dielectric properties and voltage tunable dielectric properties were investigated. The deposited films showed a cubic pyrochlore structure after annealing at 550?°C or higher temperatures. With the annealing temperature increased from 500 to 800?°C, the root-mean-square surface roughness of the films increased from 0.6 to 6.8?nm. Additional phase, MgNb₂O₆, emerged after annealing at 800?°C due to the volatilization of Bi element. The dielectric properties and tunability of the films were annealing temperature dependent. BMN thin films annealed at 750?°C had a high dielectric constant of 135 and low dielectric loss of 0.002 at 1?MHz. The high tunability of 31.3?% and figure of merit of 156.5 were obtained under an applied electric field of 1?MV/cm at room temperature.     

Chemical solution processing and characterization of Ba(Zr,Ti)O<Subscript>3</Subscript>/LaNiO<Subscript>3</Subscript> layered thin films

Ba(Zr,Ti)O₃/LaNiO₃ layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O₃ thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiO _x /SiO₂/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O₃. Chemically derived LaNiO₃ thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O₃/LaNiO₃ layered thin films of single phase perovskite were fabricated on SiO₂/Si and fused silica substrates. The dielectric constant of a Ba(Zr_0.2Ti_0.8)O₃ thin film prepared at 700°C on a LaNiO₃/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr_0.2Ti_0.8)O₃ thin film on the LaNiO₃/fused silica substrate showed a smaller dielectric constant than the Ba(Zr_0.2Ti_0.8)O₃ thin film on Pt/TiO _x /SiO₂/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O₃/LaNiO₃ films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.     

Electrodeposition and characterization of CdSex-Te1-x semiconducting thin films

Thin polycrystalline films of cadmium chalcogenides CdSe_xTe_1-x ( 0 ≤ x ≤ 1) have been prepared by electrochemical plating on ITO (indium tin oxide) coated glass substrates from an acid sulfate solution at 90 °C. Structural, morphological and compositional studies of the deposited films are reported as a function of the x coefficient. XRD analysis shows that all deposits have a cubic structure with a preferred orientation along the (111) direction. The composition in the films is found to vary linearly with the composition in the solution. The increase in the selenium content x in the CdSe_xTe_1-x films decreases the lattice constant and increases the band gap. Nevertheless this latter presents a minimum for x = 0.27.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Improved electric properties in BiFeO3 films by the doping of Ti

We prepared BiFe_1−x Ti _x O_3+δ (BFTO) films by sol gel process and various oriented films were deposited on LaNiO₃ coated SiO₂/Si substrates with different x. The effects of Ti substitution on dielectric, ferroelectric, magnetic and leakage conduction properties in BFTO system have been studied. Enhanced ferroelectricity was observed at room temperature due to the substitution of Ti. The largest double remnant polarization of 3.8 μC/cm² was acquired in the film with x = 0.10. Further more, it was observed that the dielectric constants were also enhanced by the substitution of Ti. The film with x = 0.10 has the largest dielectric constant below 100 kHz and Debye-like relaxation were observed in the films with x = 0.05 and 0.10. The leakage conduction was reduced with the increasing of the content of Ti. More over, the magnetism was also altered by the substitution.     

Phase Recognition in AlN-Ti System by Energy Dispersive Spectroscopy and Electron Backscatter Diffraction

 The combination of energy dispersive spectroscopy (EDS) and electron backscatter diffraction (EBSD) techniques in scanning electron microscope was employed to characterize the reacted interface between Ti matrix and AlN particles. Due to the high localization of EDS and EBSD, representative measurements of chemical composition and reliable determination of the crystal structure were possible for each phase in the reaction zone with complex morphology. The TiN_1−x (cubic, NaCl type), Ti₃AlN (cubic, perovskite type) and Ti-rich Ti₃ Al (hexagonal, Ni₃Sn type) phases were identified in the reaction zone after annealing at 1100 °C. EDS+EBSD combination is an efficient tool for phase analysis at the interface in reactive multicomponent systems. Received August 21, 1999. Revision November 21, 1999.