Sc:In:Fe:LiNbO3晶体的生长及全息关联存储的研究

在Fe:LiNbO3中掺进Sc2O3和In2O3采用Czochralski技术生长Sc:In:Fe:LiNbO3晶体.测试Sc:In:Fe:LiNbO3晶体的红外光谱和抗光致散射能力.Sc(1mol;):In(2mol;):Fe:LiNbO3晶体OH-吸收峰移到3508cm-1,抗光致散射能力比Fe:LiNbO3晶体提高二个数量级.对Sc(1mol;):In(2mol;):Fe:LiNbO3晶体OH-吸收峰移动机理和抗光致散射能力增强的机理进行讨论.以Sc(1mol;):In(2mol;):Fe:LiNbO3晶体作存储元件,以Cu:KNSBN晶体作为位相共轭镜进行全息关联存储,试验结果表明全息关联存储的成象质量高、图象清晰完整、噪音小.     

Sc:Fe:LiNbO3晶体的生长和光学性能研究

研究双掺Fe(0.03wt;Fe2O3)和Sc(0,1,2,3mol;)铌酸锂晶体全息存储性能.通过晶体红外光谱测试发现:Sc:Fe:LiNbO3晶体中Sc的掺杂浓度超过3mol;时,Sc:Fe:LiNbO3晶体的O-H吸收峰的位置从低掺杂时的3484cm-1移动到3508cm-1.采用光斑畸变法测得(3mol;)Sc:Fe:LiNbO3晶体抗光损伤能力为3.3×103 W/cm2,比Fe:LiNbO3提高了二个数量级.晶体的红外吸收光谱和抗光损伤能力显示:Sc的掺杂浓度为3mol;时具有明显的阈值特征.采用波长为632nm的He-Ne激光器作为光源,通过二波耦合方法测试晶体全息存储性能.实验表明:在一系列Sc:Fe:LiNbO3晶体中,Sc(2mol;):Fe:LiNbO3晶体能获得最佳的光折变灵敏度和动态范围.     

优良全息光折变存储材料-双掺铌酸锂晶体

我们生长与后处理了一系列双掺铌酸锂晶体,通过光折变存储性能的测试,在这些晶体中,我们发现了三种双掺晶体:LN:Fe,Mg;LN∶Fe,In;LN∶Fe,Zn,它们具有优良的光折变存储性能,即高衍射效率(高达60～80;)、快光折变响应(比LN∶Fe 晶体缩短了一个数量级)、和强抗光散射能力(比LN∶Fe提高近两个数量级).我们还系统地研究了光强阈值效应与全息写入的关系以及全息写入与入射光强的关系,发现在光强阈值附近耦合强度有一最大值,从而提出了最佳写入光强的概念.另外,全息光栅热固定研究还显示,双掺铌酸锂晶体比单掺Fe的铌酸锂晶体具有更优良的热固定性质:快固定时间、高固定效率、长固定寿命等.     

Zn:Fe:LiNbO3晶体的生长及其光学性能的研究

在LiNbO3中掺进ZnO和Fe2O3,以Czochralski技术生长Zn(7mol;):Fe(0.03;):LiNbO3,Zn(3mol;):Fe(0.03;):LiNbO3和Fe(0.03;):LiNbO3晶体.测试晶体的吸收光谱,Zn:Fe:LiNbO3晶体的吸收边相对Fe:LiNbO3晶体发生紫移.测试晶体的红外光谱,Zn(7mol;):Fe:LiNbO3晶体OH-吸收峰移到3529cm-1.测试晶体抗光致散射能力,Zn(3mol;):Fe:LiNbO3晶体抗光致散射能力比Fe:LiNbO3晶体提高一个数量级,Zn(7mol;):Fe:LiNbO3晶体比Fe:LiNbO3晶体高二个数量级.测试晶体的衍射效率和响应时间,Zn:Fe:LiNbO3晶体响应时间缩短,衍射效率降低.对吸收边和OH-吸收峰移动的机理,以及Zn:Fe:LiNbO3晶体抗光致散射能力增强的机理进行了研究.     

不同Li/Nb比Mg:In:Fe:LiNbO3晶体的光折变性能研究

采用提拉法生长了不同Li/Nb比(Li/Nb=0.85,0.94,1.05,1.20,1.38)的Mg:In:Fe:LiNbO3(LN)单晶.测试了Mg:In:Fe:LN晶体的红外透射光谱,紫外吸收光谱,抗光致散射能力,响应时间和指数增益系数.实验结果显示:Li/Nb=0.85晶体的OH-吸收峰在3481cm-1附近, Li/Nb=0.94、1.05、1.20的晶体的OH-吸收峰在3505cm-1附近,而Li/Nb=1.38晶体的OH-吸收峰有三个,分别在3466cm-1、3481cm-1和3518cm-1附近.随着Li/Nb比的增大,晶体的紫外吸收边发生紫移,抗光致散射能力增强,响应速度加快,指数增益系数增大.结果表明:Li/Nb=1.38的晶体是性能最为优良的光折变晶体材料.     

掺钼铌酸锂晶体的光折变性能研究

生长了掺入不同浓度六价钼元素的铌酸锂晶体(LN∶Mo),并研究了它们在351 nm、488 nm、532 nm和671 nm处的光折变性能.实验结果表明0.5mol;为最佳掺杂量,此时LN∶Mo在各波段具有最快的响应速度和较好的饱和衍射效率.增加极化电流可以提高光折变性能,尤其当极化电流为145 mA时,掺杂量为0.5mol;的LN∶Mo晶体紫外光折变响应时间缩短至0.35 s.这些优异的全息存储性能归因于Mo6+占据了正常的Nb位.LN∶Mo晶体是实现全色全息存储的潜力材料.     

掺杂LN晶体光折变效应及图象光存储特性

利用514.5nm和632.8nm波长的激光,研究了单掺杂Fe和双掺杂Ce∶Fe离子铌酸锂晶体的光折变二波耦合及光折变全息存储特性.实验结果表明生长态双掺杂Ce∶Fe与单掺杂Fe的LiNbO3晶体的光折变波耦合增益差异不明显,但双掺杂Ce∶Fe的LiNbO3晶体的图象存储和擦除特性明显得到改善.氧化态样品具有较大的透过率光谱范围和较好的图象存储质量;还原态样品具有较大的光折变二波耦合增益特性.     

[Li]/[Nb]比对Ce:LiNbO3晶体结构及光折变性能的影响

在铌酸锂(LiNbO3,LN)中掺入摩尔分数为0.1;的CeO2,以提拉法从不同[Li]/[Nb]摩尔比([Li]/[Nb]=0.750,0.850,0.946,1.100)的熔体中生长出了Ce:LN晶体.测试了晶体的晶格常数、红外光谱和居里温度.结果表明:随着[Li]/[Nb]比的增加,晶体仍为三方的LN晶体,且晶格常数和晶胞体积没有发生大的变化,v(OH-)振动峰的位置依次向长波方向移动,居里温度依次增加,结构缺陷减少.由于Ce和[Li]/[Nb]比的协同作用,[Li]/[Nb]比为1.100的Ce:LN晶体已接近化学计量比,[Li]/[Nb]比为0.850的Ce:LN晶体的居里温度近似等于纯LN晶体.利用二波耦合光路测试了晶体的衍射效率、写入时间和擦除时间,计算了晶体的光折变灵敏度及动态范围.测试了晶体的抗光致散射能力,结果表明:[Li]/[Nb]比越高的Ce:LN晶体的光折变性能越好.并分析了不同[Li]/[Nb]比Ce:LN晶体光折变性能增强的机理.     

双掺杂铌酸锂晶体的生长及其光折变性质

采用提拉法以固液同成分配比(Li2CO3/Nb2O5＝48.6/51.4)生长了Fe掺杂及(Zn,Fe)、(Mg,Fe)和(Ce,Fe)双掺杂LiNbO3(LN)单晶.Ce:Fe:LiNbO3晶体的质量,指数增益系数和衍射效率皆高于Fe:LiNbO3晶体.所测得(Zn,Fe):LN、(Ce,Fe):LN、(Mg,Fe):LN和Fe:LiNbO3晶体的抗光致散射能力分别为8.2×103,3.2×102,8.3×102和1.2×102W/cm3;在488nm光进行的光折变实验中还原处理后的(Ce,Fe):LiNbO3晶体具有最高的二波耦合增益系数,为40.2cm-1,其全息衍射效率可达82.2%;实验结果表明(Zn,Fe):LiNbO3和(Mg,Fe):LiNbO3具有抗光散射能力强,响应时间短的特点,而(Ce,Fe):LiNbO3的增益系数和衍射效率均为最高,明显优于Fe:LiNbO3晶体.     

不同Li／NbZr：Fe：LiNbO3晶体的生长及光折变效应的研究

采用Czochralski技术生长不同Li/Nb双掺杂Zr:Fe:LiNbO3晶体,测试了晶体的光学均匀性和抗光折变能力.Zr:Fe:LiNbO3晶体双折射梯度比Fe:LiNbO3晶体降低一个数量级,抗光折变能力比Fe:LiNbO3晶体提高一个数量级,发现Zr4 在LiNbO3中具有抗光折变能力.采用二波耦合光路测试不同Li/Nb的Zr:Fe:LiNbO3晶体的衍射效率、响应时间、擦除时间并计算了动态范围和灵敏度,Zr:Fe:LiNbO3晶体的响应速度,灵敏度和动态范围都比Fe:LiNbO3晶体高,它的全息存储性能优于Fe:LiNbO3晶体.     

Optical absorption spectra of LiNbO3, Fe:LiNbO3, and Zn:Fe:LiNbO3 single crystals grown by Bridgman method

The optical absorption spectra of LiNbO₃ (LN), Fe:LiNbO₃ (Fe:LN), and Zn:Fe:LiNbO₃ (Zn:Fe:LN) single crystals grown by Bridgman method were measured and compared. The absorption characteristics of the samples and the effects of growth process conditions on the absorption spectra were investigated. The Fe, Zn and Li concentrations in the crystals were analyzed by inductively coupled plasma (ICP) spectrometry. The results indicated that the overall Fe ion and Fe²⁺ concentration in Fe:LN and Zn:Fe:LN crystals increased along the growing direction. The incorporation of ZnO in Fe:LN crystal induced increase of Fe²⁺ in the crystal. Among Fe‐doped and Zn:Fe‐codoped LN single crystals, 3 mol% ZnO doped Fe:LN had a biggest change of Fe²⁺ ion concentration from bottom to top part of crystal. The effects of technical conditions (atmosphere and thermal history) on Fe²⁺ ion concentration were discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microstructure and optical properties of Zn:Mn:Fe:LiNbO3 crystals

Zn:Mn:Fe:LiNbO₃ crystals were prepared by Czochralski technique. Its microstructure was measured and analyzed by UV‐Vis absorption spectra. The optical damage resistance of Zn:Mn:Fe:LiNbO₃ crystals was characterized by the transmitted beam pattern distortion method. It increases remarkably when the concentration of ZnO is over a threshold concentration. Its value in Zn(7.0 mol%):Mn:Fe:LiNbO₃ crystal is about three orders of magnitude higher that in the Mn:Fe:LiNbO₃ crystal. The dependence of the defects on the optical damage resistance was discussed. The non‐volatile holographic storage was realized in all crystals, and the sensitivity of the Zn(7.0 mol%):Mn:Fe:LiNbO₃ crystal is much higher than that of others. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

In doping effect on optical properties in Zn:In:Fe:LiNbO3 crystals

A series of Zn:In:Fe:LiNbO₃ crystals were prepared by Czochralski method. The crystal composition and defect structure were analyzed by ICP‐OE/MS, UV–vis and IR spectroscopy. The results show that with increasing In³⁺ doping concentration in melt, the segregation coefficients of both Zn and In ions decrease. The optical damage resistance of Zn:In:Fe:LiNbO₃ crystals was studied by the transmitted beam pattern distortion method. It is found that the optical damage resistance of Zn:In(3mol%):Fe LiNbO₃ crystals is two orders of magnitude higher than that of Zn:Fe:LiNbO₃. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Double‐frequency properties of In:LiNbO3 crystals

1 mol%, 2 mol%, 3 mol%, 4 mol% and 5 mol% In³⁺ doped LiNbO₃ crystals were grown by the Czochralski method, respectively. Oxidized treatment of some crystals was carried out. The infrared transmission spectra and photo‐damage resistance of the samples were measured. The results showed that the OH^‐ absorption peaks of In(3mol%):LiNbO₃, In(4mol%):LiNbO₃ and In(5mol%):LiNbO₃ crystals were located at about 3508 cm^‐1, while those of In(1mol%):LiNbO₃ and In(2mol%):LiNbO₃ crystals were located at about 3484cm^‐1. When the doped In³⁺ concentration reached its threshold in LiNbO₃ crystal, photo‐damage resistance of In:LiNbO₃ crystals was two orders of magnitude higher than that of pure LiNbO₃ crystal. The experimental results of the second harmonic generation (SHG) showed that the phase matching temperatures of In:LiNbO₃ crystals were lower than those of Zn:LiNbO₃ and Mg:LiNbO₃ crystals and the SHG efficiency reached 38%. Oxidization treatment was also found to make the dark trace resistance of crystals increase. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of Mg/Er co‐doping on the principal laser parameters of LiNbO3 crystals

Mg: Er: LiNbO₃ crystals were grown by the Czochralski technique with various concentrations of MgO = 2 mol%, 4 mol%, 6 mol% and the fixed concentration of Er₂O₃= 1 mol% in the melt, and the 8 mol%Mg: 1 mol%Er: LiNbO₃ crystal was fabricated by the Czochralski technique with special technology process. The crystals were treated by polarization, reduction and oxidation. The segregation coefficients of Mg²⁺ and Er³⁺ in Mg: Er: LiNbO₃ crystals were measured by X‐ray fluorescence spectrograph, as well as the crystal's defect structure and optical properties were analyzed by the UV‐Vis, IR and fluorescent spectroscopy. The pump wavelength and the surge wavelength were determined. Using m‐line method tested optical damage resistance of those crystals, the results show that photodamage threshold of Mg: Er: LiNbO₃ crystals are higher than that of Er: LiNbO₃ crystal, and the oxidation treat could enhance the photodamage resistant ability of crystals while the reduction treat could depress the ability. The optical damage resistance of 8 mol%Mg: 1 mol%Er: LiNbO₃ crystal was the strongest among the samples, which was two orders magnitude higher than that of 1 mol%Er: LiNbO₃ crystal. The dependence of the optical properties on defect structure of Mg: Er: LiNbO₃ crystals was discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect structure and optical damage resistance of In:Fe:Cu:LiNbO3 crystals with various [Li]/[Nb] ratios

In:Fe:Cu:LiNbO₃ crystals were grown in air by the Czochralski technique with various [Li]/[Nb] ratios of 0.946, 1.050, 1.200, and 1.380 in melt. Based on the ICP‐AES (inductively coupled plasma atomic emission spectrometry) analyzed results, the chemical formula of the triple‐doped In:Fe:Cu:LiNbO₃ crystals were obtained. It can be seen that the near‐stoichiometric ratio value is between 1.050 and 1.200 for our samples. The optical damage resistance of In:Fe:Cu:LiNbO₃ crystals was characterized by changes in light‐induced birefringence and it increases with the increasing of [Li]/[Nb] ratios. The dependence of the optical damage resistance on the defect structure of In:Fe:Cu:LiNbO₃ crystals is discussed in detail based on the obtained chemical formulas. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect structure and optical damage resistance of Hf:Fe:LiNbO3 crystals with various [Li]/[Nb] ratios

Hf:Fe:LiNbO₃ crystals were grown in air by the Czochralski technique with various ratios of [Li]/[Nb]=0.94, 1.05, 1.20 in melt. The defect structure and location of doped ions were analyzed by the UV‐visible and infrared spectroscopy. The optical damage resistance ability of Hf:Fe:LiNbO₃ crystals was measured by the photo‐induced birefringence change and the transmitted light spot distortion method. The results show that the optical damage resistance ability of Hf:Fe:LiNbO₃ crystals is enhanced with the increase of the [Li]/[Nb] ratio. The dependence of the optical damage resistance of Hf:Fe:LiNbO₃ crystals on the defect structure is discussed in detail. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and optical damage resistance of Sc,Er Co‐doped LiNbO3 crystals

A series of Sc:Er:LiNbO₃ crystals have been grown by Czochralski method. Their ultraviolet‐visible (UV‐Vis) absorption spectra was measured and discussed to investigate their defect structure. The optical damage resistance of Sc:Er:LiNbO₃ crystals was characterized by the transmitted beam pattern distortion method. It increases remarkably when the concentration of Sc₂O₃ exceeds a threshold concentration. The optical damage resistance of Sc (3.0mol %):Er:LiNbO₃ is much higher than that of the Er:LiNbO₃. The intrinsic and extrinsic defects were discussed to explain the enhance of the optical damage resistance in the Sc:Er:LiNbO₃ crystals. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and photorefractive properties of Mg:Ce:Cu:LiNbO3 crystals grown by Czochralski method

In this paper, photorefractive properties of Mg:Ce:Cu:LiNbO₃ crystals were studied. The crystals doped with different concentration of Mg ions have been grown by the Czochralski method. Mg concentrations in grown crystals were analyzed by an inductively coupled plasma optical emission spectrometry (ICP‐OE/MS). The crystal structures were analyzed by the X‐ray powder diffraction (XRD), ultraviolet‐visible (UV‐Vis) absorption spectra and infrared (IR) transmitatance spectra. The photorefractive properties of crystals were experimentally studied by using two‐beam coupling. In this experiment we determined the writing time, maximum diffraction efficiency and the erasure time of crystals samples with He‐Ne laser. The results showed that the dynamic range (M/#), sensitivity (S) and diffraction efficiency (η) were dependent on the Mg doping concentration, and the Mg(4.58mol%):Ce:Cu:LiNbO₃ crystal was the most proper holographic recording media material among the six crystals studied in the paper. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)