Effect of morphology on organic thin film transistor sensors

This review provides a general introduction to organic field-effect transistors and their application as chemical sensors. Thin film transistor device performance is greatly affected by the molecular structure and morphology of the organic semiconductor layer. Various methods for organic semiconductor deposition are surveyed. Recent progress in the fabrication of organic thin film transistor sensors as well as the correlation between morphology and analyte response is discussed.     

Nanostructured materials in potentiometry

Potentiometry is a very simple electrochemical technique with extraordinary analytical capabilities. It is also well known that nanostructured materials display properties which they do not show in the bulk phase. The combination of the two fields of potentiometry and nanomaterials is therefore a promising area of research and development. In this report, we explain the fundamentals of potentiometric devices that incorporate nanostructured materials and we highlight the advantages and drawbacks of combining nanomaterials and potentiometry. The paper provides an overview of the role of nanostructured materials in the two commonest potentiometric sensors: field-effect transistors and ion-selective electrodes. Additionally, we provide a few recent examples of new potentiometric sensors that are based on receptors immobilized directly onto the nanostructured material surface. Moreover, we summarize the use of potentiometry to analyze processes involving nanostructured materials and the prospects that the use of nanopores offer to potentiometry. Finally, we discuss several difficulties that currently hinder developments in the field and some future trends that will extend potentiometry into new analytical areas such as biology and medicine.     

Recent trends in potentiometric sensor arrays--a review

Nowadays there exists a large variety of ion sensors based on polymeric or solid-state membranes that can be used in a sensor array format in many analytical applications. This review aims at providing a critical overview of the distinct approaches that were developed to build and use potentiometric sensor arrays based on different transduction principles, such as classical ion-selective electrodes (ISEs) with polymer or solid-state membranes, solid-contact electrodes (SCE) including coated wire electrodes (CWE), ion-sensitive field-effect transistors (ISFETs) and light addressable potentiometric sensors (LAPS). Analysing latest publications on potentiometric sensor arrays development and applications certain problems are outlined and trends are discussed.     

Synthesis and modification of silicon nanosheets and other silicon nanomaterials

Silicon nanomaterials and nanostructures exhibit different properties from those of bulk silicon materials based on quantum confinement effects. They are expected to lead to the development of new applications of silicon, in addition to wide use in semiconductor devices. Aside from industrial interest, intriguing issues of academic interest still remain with respect to the origins of their characteristic properties. Zero- and one-dimensional crystalline silicon nanomaterials have been synthesized, to date, by using many methods and there has been rapid progress in size control and modification procedures. However, there have been only a few examples of silicon nanomaterials with atomic-order thickness akin to carbon nanomaterials, such as two-dimensional silicon nanosheets. Moreover, mass production of silicon nanomaterials with relatively low cost is not easily achievable, due to the typically severe conditions required for fabrication, such as high temperature and ultralow pressure. Recently, we have developed a soft synthetic method for silicon nanosheets with chemical surface modification in a solution process. This review provides methods for the synthesis and modification of silicon nanosheets and other silicon nanomaterials with examples of their potential applications.     

Structures and electronic states of halogen-terminated graphene nano-flakes

Halogen-functionalized graphenes are utilized as electronic devices and energy materials. In the present paper, the effects of halogen-termination of graphene edge on the structures and electronic states of graphene flakes have been investigated by means of density functional theory (DFT) method. It was found that the ionization potential (Ip) and electron affinity of graphene (EA) are blue-shifted by the halogen termination, while the excitation energy is red-shifted. The drastic change showed a possibility as electronic devices such as field-effect transistors. The change of electronic states caused by the halogen termination of graphene edge was discussed on the basis of the theoretical results.     

Structures and electronic states of fluorinated graphene

Functionalized graphenes have been utilized as electronic devices and energy materials. In the present paper, the effects of fluorine-termination of graphene edge on the structures and electronic states of graphene have been investigated by means of density functional theory (DFT) method. It was found that the ionization potential (Ip) and electron affinity of graphene (EA) are blue-shifted by the F-substitution. On the other hand, the excitation energy was red-shifted. The drastic change shows a possibility as electronic devices such as field-effect transistors. The drastic change of electronic states caused by the F-substitution of graphene edge was discussed on the basis of the theoretical results.     

Interactions of DNA with graphene and sensing applications of graphene field-effect transistor devices: A review

Graphene field-effect transistors (GFET) have emerged as powerful detection platforms enabled by the advent of chemical vapor deposition (CVD) production of the unique atomically thin 2D material on a large scale. DNA aptamers, short target-specific oligonucleotides, are excellent sensor moieties for GFETs due to their strong affinity to graphene, relatively short chain-length, selectivity, and a high degree of analyte variability. However, the interaction between DNA and graphene is not fully understood, leading to questions about the structure of surface-bound DNA, including the morphology of DNA nanostructures and the nature of the electronic response seen from analyte binding. This review critically evaluates recent insights into the nature of the DNA graphene interaction and its affect on sensor viability for DNA, small molecules, and proteins with respect to previously established sensing methods. We first discuss the sorption of DNA to graphene to introduce the interactions and forces acting in DNA based GFET devices and how these forces can potentially affect the performance of increasingly popular DNA aptamers and even future DNA nanostructures as sensor substrates. Next, we discuss the novel use of GFETs to detect DNA and the underlying electronic phenomena that are typically used as benchmarks for characterizing the analyte response of these devices. Finally, we address the use of DNA aptamers to increase the selectivity of GFET sensors for small molecules and proteins and compare them with other, state of the art, detection methods.     

有机场效应晶体管应用于化学及生物传感的研究进展

有机场效应晶体管(OFETs)是以有机半导体材料作为有源层的晶体管器件。和传统的无机半导体器件相比,由于其具有成本低、易加工、柔性好和生物相容性而被人们广泛研究,在多种化学和生物传感器领域具有潜在而广泛的应用前景。本文简单介绍了OFETs的结构和工作原理,总结了近几年来OFETs在化学及生物传感方面的研究进展,最后对OFETs的发展方向做了归纳和展望。     

Correlation between dielectric/organic interface properties and key electrical parameters in PPV-based OFETs

We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on polyphenylenevinylene derivatives. Through a systematic investigation of the most common dielectric surface treatments, a direct correlation of their effect on the field-effect electrical parameters, such as charge carrier mobility, On/Off current ratio, threshold voltage, and current hysteresis, has been established. It is found that the presence of OH groups at the dielectric surface, already known to act as carrier traps for electrons, decreases the hole mobility whereas it does not substantially affect the other electrical characteristics. The treatment of silicon dioxide surfaces with gas phase molecules such as octadecyltrichlorosilane and hexamethyldisilazane leads to an improvement in hole mobility as well as to a decrease in current hysteresis. The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related not only to the OH groups density but also to the interaction between the dielectric and the semiconductor molecules. Specifically, the elimination of the OH groups produces the same effect observed with hexamethyldisilazane. The hole mobility values obtained with hexamethyldisilazane and polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注。有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟。本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理。同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结。     

聚合物场效应晶体管材料及其器件

导电聚合物因为可以大面积成膜、器件制作工艺简单,近年来在有机场效应晶体管的研究中受到越来越多的关注.有的聚合物场效应晶体管其性能已经可以和无定型硅晶体管相比拟.本文回顾了聚合物场效应晶体管的发展历程,概述了聚合物场效应晶体管的材料、器件制作、性能及工作机理.同时,对聚合物场效应晶体管的发展前景和目前存在的问题作了简单的总结.     

Analytical characteristics and sensitivity mechanisms of electrolyte-insulator-semiconductor system-based chemical sensors—a critical review

Recent trends in research and development of electrolyte-insulator-semiconductor (EIS) field-effect chemical sensors (ion-selective field-effect transistors, light-addressable potentiometric sensors, capacitive EIS-sensors) with inorganic gate insulators (oxide, nitride and chalcogenide films) are reviewed. Physical properties of EIS systems and basic mechanisms of their chemical sensitivity are examined. Analytical characteristics and sensing mechanisms of EIS pH sensors with oxide and nitride films, as well as metal ions sensors with chalcogenide films, are critically discussed. Prospects of future research on EIS field-effect biosensors are briefly outlined.     

Recent advances on the development of graphene-based field-effect transistors,electrochemical biosensors and electrochemiluminescence biosensors

Graphene, a honeycomb lattice of carbon material with single-atom-layer structure, demonstrates extraordinary mechanical, thermal, chemical and electronic properties. Thus, it has sparked tremendous interests in various fields, such as energy storage and conversion devices, field-effect transistors (FET), chemical sensors and biosensors. In this review, we will first focus on the synthesis method of graphene and the fabrication strategy of graphene-based materials. Subsequently, the construction of graphene-based biosensors are introduced, in which three kinds of biosensors are discussed in details, including the FET, electrochemical biosensors and electrochemiluminescence (ECL) biosensors. The performances of the state-of-the-art biosensors on the detection of biomolecules are also displayed. Finally, we also highlight some critical challenges remain to be solved and the development in this field for further research.     

Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors

Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.     

二维半导体材料纳米电子器件和光电器件

近年来,随着各领域对微电子器件集成度及性能要求的不断提高,发展基于二维半导体材料的新型高性能功能性器件成为了突破当前技术瓶颈的重要环节和关键方向。目前,作为新型二维半导体材料的代表,二维过渡金属二硫化物、二维黑磷以及范德瓦尔斯异质结凭借其在电学、热学、机械、光学等方面的优异性能已经成为了发展高性能纳米电子器件和光电器件的最具潜力的材料之一。在本综述中,首先概述了几种用于纳米器件的常见二维材料,分析了材料的结构、性能及其在纳米器件中的应用,其次重点对基于过渡金属二硫化物、黑磷以及由其衍生的范德瓦尔斯异质结的纳米电子器件和光电器件的最新研究进展进行讨论,最后对目前二维半导体纳米器件所面临的挑战以及未来的发展方向进行总结及分析,从而为未来发展高性能功能性纳米器件提供支持。     

Label-free biosensors based on aptamer-modified graphene field-effect transistors

A label-free immunosensor based on an aptamer-modified graphene field-effect transistor (G-FET) is demonstrated. Immunoglobulin E (IgE) aptamers with an approximate height of 3 nm were successfully immobilized on a graphene surface, as confirmed by atomic force microscopy. The aptamer-modified G-FET showed selective electrical detection of IgE protein. From the dependence of the drain current variation on the IgE concentration, the dissociation constant was estimated to be 47 nM, indicating good affinity and the potential for G-FETs to be used in biological sensors.     

Organic semiconductors in potentiometric gas sensors

Solid-state potentiometric sensors based on the chemical modulation of the work function of organic semiconductors are discussed. The theory of the chemical work function modulation is briefly reviewed. There are several sensor configurations, in which this transduction principle can be employed. First is the Kelvin probe, second is the chemically sensitive field-effect transistor in which the conventional metal gate of the silicon-based transistor has been replaced by an organic semiconductor. Chemical modulation of work function enters also into the operation of the third type of sensor discussed in this review, on “organic field-effect transistor”. It is shown that in reality such sensors are “field-modulated chemiresistors”, rather than potentiometric sensors.     

有机薄膜晶体管半导体材料的研究进展

有机薄膜晶体管(organic thin-film transistors,OTFTs)具有工艺简单、成本低及柔性良好等优点,在有源显示、传感及逻辑电路等领域有着十分重要的应用前景.实用性有机薄膜晶体管应具备高迁移率、高开关比、低阈值电压及良好的稳定性等性能.有机半导体材料是有机薄膜晶体管的主要组成部分,对器件的性能有着重要影响.介绍了有机薄膜晶体管的基本结构和运行模式,按照p型、n型及双极性分类总结了有机薄膜晶体管半导体材料的研究进展情况,最后对有机半导体材料的前景进行了展望.     

Chemical and biological sensors based on organic thin-film transistors

The application of organic thin-film transistors (OTFTs) to chemical and biological sensing is reviewed. This review covers transistors that are based on the modulation of current through thin organic semiconducting films, and includes both field-effect and electrochemical transistors. The advantages of using OTFTs as sensors (including high sensitivity and selectivity) are described, and results are presented for sensing analytes in both gaseous and aqueous environments. The primary emphasis is on the major developments in the field of OTFT sensing over the last 5–10 years, but some earlier work is discussed briefly to provide a foundation.