溶胶凝胶制备氧化钒薄膜的生长机理及光电特性

采用溶胶凝胶法, 在不同的退火温度下制备了不同的氧化钒薄膜. 利用扫描电子显微镜、X射线衍射仪、高阻仪、紫外-可见分光光度计和傅里叶红外光谱仪等, 对薄膜的形貌、晶态、电学和光学特性进行了分析. 结果表明, 溶胶凝胶法获取V₂O₅薄膜的最佳退火温度为430 ℃, 低于此温度不利于使有机溶剂充分分解, 高于此温度则V–O键发生裂解、形成更多的低价态氧化钒. 本文制备的氧化钒薄膜具有较高的电阻温度系数和光吸收率, 适合应用在非制冷红外探测器中. 本文揭示了溶胶凝胶法制备氧化钒薄膜的生长机理.关键词：氧化钒薄膜溶胶凝胶光电特性生长机理     

Gd_2O_3:Eu透明厚膜的制备及其发光特性

以无机稀土氧化物为原料、2-甲氧基乙醇为溶剂、PVP为胶粘剂、PEG200为有机分散剂,采用溶胶-凝胶工艺成功制备出Gd2O3∶Eu3+透明闪烁薄膜。通过2次涂复,薄膜厚度达到了1.5μm,膜层均匀、无散射颗粒、无裂纹,可见光区的透射率约为80%。研究表明PVP在厚膜烧结过程中可以松弛膜的结构、减小应力的出现,避免厚膜开裂,同时还可以提高溶胶的粘度,在厚膜制备中起到了关键作用。此外,我们还研究了Gd2O3∶Eu3+闪烁薄膜的激发、发射和发光衰减时间谱,结果表明,该薄膜发光性能优良,可初步满足X射线成像用闪烁薄膜的要求。     

反应离子镀制备ITO膜

采用反应离子镀新工艺成功地在K9玻璃上制备了ITO(Indium Tin Oxide)透明导电膜,所制备的ITO膜在550～600nm波长范围内,典型的峰值透过率为89%,面电阻为34Ω/□。     

衬底偏置对ITO膜光学性质的影响

研究衬底偏置机理。在低温偏压衬底下,用三极反应溅射法镀制出在可见光区透射率为83％的ITO膜。测试低温负偏置衬底法与高温无偏置衬底法镀制ITO膜的光谱特性,发现两者在红外区有相似变化。确定出氧分压范围在(5～7)×10~(-3)Pa。     

PVP掺杂-ZrO2溶胶-凝胶工艺制备多层激光高反射膜的研究

以丙醇锆(ZrPr)为锆源,二乙醇胺(DEA)为络合剂,原位引入聚乙烯吡咯烷酮(PVP),在乙醇体系中成功地合成了PVP掺杂-ZrO2溶胶.采用旋涂法在K9玻璃基片上制备了PVP-ZrO2单层杂化薄膜.用不同掺杂量的PVP-ZrO2高折射率膜层与相同的SiO2低折射率膜层交替沉积四分之一波堆高反射膜.借助小角X射线散射研究胶体微结构,用红外光谱、原子力显微镜、紫外/可见/近红外透射光谱、椭圆偏振仪以及1064nm的强激光辐照实验对薄膜的结构、光学和抗激光损伤性能进行表征.研究发现,体系组成的适当配置可以在溶胶稳定的前提下实现ZrPr的充分水解,赋予薄膜良好的结构、光学和抗激光损伤性能.杂化体系中,DEA与ZrPr之间强的配合作用大大降低了ZrO2颗粒表面羟基的活性,使得PVP大分子只是以微弱的氢键与颗粒的表面羟基作用而均匀分散于ZrO2颗粒的周围,对颗粒的形成和生长无显著影响.因而在实验研究范围内,随PVP含量的增大,PVP-ZrO2杂化膜层的折射率和激光损伤阈值均无显著变化.但是,薄膜中均匀分布的PVP柔性链可以有效促进膜层应力松弛,显著削弱不同膜层之间的应力不匹配程度、大大方便多层光学薄膜的制备.当高折射率膜层中PVP的质量分数达到15%-20%时,膜层之间良好的应力匹配使得多层高反射膜的沉积周期数可达到10以上.沉积1O个周期的多层反射膜,在中心波长1064nm处透射率约为1.6%-2.1%,接近全反射特征,其激光损伤阈值为16.4-18.2J/cm2(脉冲宽度为1ns).     

单壁碳纳米管膜及其三聚氰胺甲醛树脂复合材料的光电特性

单壁碳纳米管能够强烈吸收光线,尤其是在近红外区域,并能将光能转换成热能.同时,单壁碳纳米管还具有相当大的将热能转换成电能的能力.通过真空过滤方法,将由化学气相沉积生成的单壁碳纳米管阵列制备成单壁碳纳米管膜.根据研究的需要设计了一个简单的单壁碳纳米管膜光伏性质测试实验装置,并在其两端成功地实现了由红外光转换为电压输出.通过功能化步骤,制备了单壁碳纳米管/三聚氰胺甲醛树脂复合材料膜,实验结果表明该复合材料能产生符号相反的输出电压.这预示着单壁碳纳米管及其三聚氰胺甲醛树脂复合材料在光电领域具有良好的应用前景.     

光电二极管的特性的研究

本文通过对用光电转换综合测量仪所测出的光电二极管的特性的实验数据、特性曲线的讨论,验证了光电二极管的光照特性、伏安特性以及光谱特性。     

两种方法制备ITO薄膜的红外特性分析

比较了用电束加热蒸发法和直流磁控溅射法制备的氧化锡铟(ITO)薄膜在红外波段的光学特性实验发现,通过直流磁控溅射在常温下制备的ITO薄膜在红外波段折射率稳定、消光系数小,比电子束加热蒸发制备的膜有较高的透过率在波长1550nm附近的透过率可达86%以上,消光系数约为004,方电阻最低为100Ω/□.     

重掺杂AZO透明导电薄膜的光电特性

以Al质量分数为2%的ZnO陶瓷靶为靶材,在氧气气氛中,采用脉冲激光沉积方法(PLD)在石英衬底表面生长了重掺杂的ZnO:Al(AZO)薄膜.通过X射线衍射仪、紫外可见分光光度计、微区拉曼光谱仪、霍尔测量仪对合成薄膜材料的晶体结构、光学、电学性质等进行了研究.结果表明:所制备的AZO薄膜呈现具有高度c轴择优取向的ZnO...     

Effect of calcination temperature on phase transformation,structural and optical properties of sol–gel derived ZrO2 nanostructures

Zirconia (ZrO₂) nanostructures of various sizes have been synthesized using sol–gel method followed by calcination of the samples from 500 to 700 °C. The calcined ZrO₂ powder samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infra-red spectroscopy (FT-IR), UV–visible spectroscopy (UV–vis.), Raman spectroscopy (RS) and thermogravimetric analysis (TGA). The phase transformation from tetragonal (t) to monoclinic (m) was observed. The average diameter of the ZrO₂ nanostructures calcined at 500, 600 and 700 °C was calculated to be 8, 17 and 10 nm, respectively. The ZrO₂ sample calcined at 500 °C with tetragonal phase shows a direct optical band gap of 5.1 eV. The value of optical band gap is decreased to 4.3 eV for the ZrO₂ calcined at 600 °C, which contains both tetragonal (73%) and monoclinic (27%) phases. On further calcination at 700 °C, where the ZrO₂ nanostructures have 36% tetragonal and 64% monoclinic phases, the optical band gap is calculated to be 4.8 eV. The enhancement in optical band gap for ZrO₂ calcined at 700 °C may be due to the rod like shape of ZrO₂ nanostructures. The tetragonal to monoclinic phase transformation was also confirmed by analyzing Raman spectroscopic data. The TG analysis revealed that the ZrO₂ nanostructure with dominance of monoclinic phase is found to be more stable over the tetragonal phase. In order to confirm the phase stability of the two phases of ZrO₂, single point energy is calculated corresponding to its monoclinic and tetragonal structures using density functional theory (DFT) calculations. The results obtained by theoretical calculations are in good agreement with the experimental findings.     

Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis

Zirconium doped zinc oxide thin films with enhanced optical transparency were prepared on Corning 1737 glass substrates at the substrate temperature of 400 °C by spray pyrolysis method for various doping concentrations of zirconium (IV) chloride in the spray solution. The X-ray diffraction studies reveal that the films exhibit hexagonal crystal structure with polycrystalline grains oriented along (0 0 2) direction. The crystalline quality of the films is found to be deteriorating with the increase of doping concentration and acquires amorphous state for higher concentration of 8 at.% in precursor solution. The average transmittance for 5 at.% (solution) zirconium doped ZnO film is significantly increased to ∼92% in the visible region of 500-800 nm. The room temperature photoluminescence (PL) spectra of films show a band edge between 3.41 and 3.2 eV and strong blue emission at 2.8 eV irrespective of doping concentration and however intensity increases consistently with doping levels. The vacuum annealing at 400 °C reduced the resistivity of the films significantly due to the coalescence of grains and the lowest resistivity of 2 × 10⁻³ Ω cm is observed for 3 at.% (solution) Zr doped ZnO films which envisages that it is a good candidate for stable TCO material.     

Characteristics of ZnO:In thin films prepared by RF magnetron sputtering

In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10⁻³ Ω cm.     

TiO2溶胶-凝胶光学膜制备工艺对其光学性质的影响

本文对TiO₂溶胶凝胶光学膜膜厚、折射率随不同温度作了在线测量,并讨论了在线温度对其光学性质的影响.考察了提拉速度对膜光学性质的影响。     

溶胶-凝胶法制备的光学薄膜表面粒度及其分布

本文研究了溶胶-凝胶法制备的光学薄膜表面粒度及其分布,结果表明:膜表面的粒度大小与热处理温度及陈化时间有关,粒度分布函数可分为泊松分布、正态分布等.     

溶胶-凝胶法制备的光学薄膜表面粒度及其分布

本文研究了溶胶-凝胶法制备的光学薄膜表面粒度及其分布,结果表明:膜表面的粒度大小与热处理温度及陈化时间有关,粒度分布函数可为泊松分布,正态分布等.     

透射光谱法测试双面薄膜的光学参数

由于普通的化学气相沉积法制作高掺Sn的二氧化硅薄膜比较容易产生结晶,而溶胶-凝胶法制备薄膜化学组成比较容易控制,可以制作出掺Sn浓度较大的材料。文章采用了溶胶-凝胶的方法制备出了66 mol%和75 mol%两种不同浓度的掺Sn的SiO₂薄膜,用浸渍法多次提拉薄膜以增加薄膜的厚度,之后用紫外-可见分光光度计测量了薄膜的透射光谱。之前基于透射光谱的方法计算玻璃基底上薄膜的光学参数都是针对单面薄膜,该文针对浸渍法产生的双面薄膜,建立了相对应的薄膜模型,并分别用包络线法计算出了两种不同薄膜样品的光学参数。计算结果表明两种不同薄膜样品的折射率随着波长的增加而增加,薄膜的厚度都为900 nm左右。     

Synthesis, structural and optical characterization of nanocrystalline ZnS:Cu embedded in silica matrix

The synthesis of Cu doped ZnS nanoparticles inside the pore of an inorganic silica gel matrix is presented. The synthesized nanoparticles were characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX). X-ray diffraction pattern reveals the crystalline wurtzite phase of ZnS. The existence of silica gel in modeling morphologies of the nanoparticles was characterized using Fourier transform infrared (FTIR) spectrometer. Thickness of the silica shell was also calculated. UV- absorption spectrum shows the appearance of an absorption peak at 273 nm which confirms the blue shift as compared to that of bulk ZnS. The photoluminescence (PL) emission spectrum of the sample showed a broad band in the range 465-510 nm due to the transition from the conduction band edge of ZnS nanocrystals to the acceptor like t₂ state of Cu.     

Enhanced energy storage and pyroelectric properties of highly (100)-oriented (Pb1−x−yLaxCay)Ti1−x/4O3 thin films derived at low temperature

Highly (100)-oriented (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ ($x=0.15$, $y=0.05$; $x=0.1$, $y=0.1$; $x=0.05$, $y=0.15$) thin films were deposited on Pt/Ti/SiO₂/Si substrates at a low temperature of 450?°C via a sol–gel route. It was found that all the (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ thin films could be completely crystallized and the content of La/Ca showed a significant effect on the electrical properties of films. Among the three films, the (Pb_1?x?yLa_xCa_y)Ti_1?x/4O₃ ($x=0.1$, $y=0.1$) thin film exhibited the enhanced overall electrical properties, such as a low dielectric loss ($\tan ?\delta <0.08$) and leakage current ($J～4.6\times {10}^{?5}$ A/cm²), a high recoverable energy density (W_re ～ 15 J/cm³), as well as a large pyroelectric coefficient (p ～ 190 μC/m²K) and figure of merit ($F_{\mathrm{d}}^{\prime }～77\mathrm{\mu }\text{C}/{\text{m}}^2$K). The findings suggest that the fabricated thin films with a good (100) orientation can be an attractive candidate for applications in Si-based energy storage and pyroelectric devices.