一维光子晶体中亚波长缺陷膜对Goos-Hnchen位移的调制特性

利用传输矩阵法分析一维光子晶体中亚波长缺陷膜对缺陷模频率处Goos-Hnchen位移的调制特性,讨论了亚波长缺陷膜的厚度、磁导率及介电常量对一维光子晶体缺陷模频率处的Goos-Hnchen位移的影响.研究发现:一层几何厚度极小的亚波长薄膜即可非常灵敏地调制一维光子晶体缺陷模频率处Goos-Hnchen位移的位置及其大小;并且当亚波长缺陷膜为左手材料时,Goos-Hnchen位移随亚波长缺陷膜物理参量的变化趋势与普通右手材料时的情形完全相反.     

一维光子晶体中亚波长缺陷膜对Goos-Hnchen位移的调制特性

      利用传输矩阵法分析一维光子晶体中亚波长缺陷膜对缺陷模频率处Goos-Hnchen位移的调制特性,讨论了亚波长缺陷膜的厚度、磁导率及介电常量对一维光子晶体缺陷模频率处的Goos-Hnchen位移的影响.研究发现：一层几何厚度极小的亚波长薄膜即可非常灵敏地调制一维光子晶体缺陷模频率处Goos-Hnchen位移的位置及其大小;并且当亚波长缺陷膜为左手材料时,Goos-Hnchen位移随亚波长缺陷膜物理参量的变化趋势与普通右手材料时的情形完全相反.     

单轴各向异性左手介质表面的Goos-H(a)nchen位移

分析了单轴各向异性左手介质表面的Goos-H(a)nchen位移,分别给出了光轴与两种介质的界面垂直和平行情形下的Goos-H(a)nchen位移解析表达式,并分析了Goos-H(a)nchen位移产生的条件以及位移的正负情况.还采用菲涅尔近似的方法给出了临界角附近的Goos-H(a)nchen位移表达式,结果表明临界角附近的Goos-H(a)nchen位移是入射光的束腰半径和入射角的函数,并且给出了临界角入射时Goos-H(a)nchen位移的较为简洁的近似表达式,这样就在整个角度的取值范围内都给出了Goos-H(a)nchen位移的表达式.     

一维掺杂光子晶体缺陷模的共振理论

为了得到一维掺杂光子晶体的共振理论,建立了一维掺杂光子晶体的谐振腔模型,利用谐振腔的共振条件推导出缺陷模频率满足的解析公式,从理论上解释了产生一维掺杂光子晶体缺陷模的物理机理.利用频率的解析公式对缺陷模的频率随入射角、杂质光学厚度以及杂质折射率的变化规律进行了研究,解释了一维掺杂光子晶体缺陷模的变化规律.与特征矩阵法的计算结果相比,其结果完全吻合,从而证明了共振理论的正确性,弥补了一维光子晶体研究中数值计算方法的不足.     

一维掺杂光子晶体缺陷模的共振理论

为了得到一维掺杂光子晶体的共振理论,建立了一维掺杂光子晶体的谐振腔模型,利用谐振腔的共振条件推导出缺陷模频率满足的解析公式,从理论上解释了产生一维掺杂光子晶体缺陷模的物理机理.利用频率的解析公式对缺陷模的频率随入射角、杂质光学厚度以及杂质折射率的变化规律进行了研究,解释了一维掺杂光子晶体缺陷模的变化规律.与特征矩阵法的计算结果相比,其结果完全吻合,从而证明了共振理论的正确性,弥补了一维光子晶体研究中数值计算方法的不足.     

近零折射率区超导材料的Goos-H?nchen位移

作为一种特殊的光学现象,对一定的光学结构,Goos-H?nchen(GH)位移与构造材料密切相关.对电介质/超导/电介质这一结构,本文给出了GH位移在超导材料为近零折射率材料时随入射角、光波长和超导层厚度等参数的变化曲线.结果表明,GH位移随上述参数的变化规律,与超导材料折射率为零时的波长(阈值波长)相关联,波长大于和小于阈值波长时的变化规律存在一定的差异.近零折射率材料在光子学领域具有广泛的应用.计算结果为新型光子学器件研究开发提供了参考.论文对大学生理解近零折射率概念,以及近零折射率区超导材料的Goos-H?nchen位移也有所帮助.     

一维光子晶体缺陷模的偏振特性研究

利用周期结构的布洛赫定理推导了一维无限光子晶体缺陷模方程,研究了缺陷模的偏振特性,以及在不同入射角和缺陷层厚度下缺陷模位置的变化.利用传输矩阵方法对有限周期数光子晶体也进行了研究,分别对应一维无限光子晶体和有限周期数光子晶体给出了数值计算结果.通过比较这两者的数值结果得出了缺陷模随入射角和缺陷层厚度变化的一般规律.     

多个单负材料缺陷一维光子晶体的孪生缺陷模

分析了含有多个单负材料缺陷层的一维光子晶体中缺陷模的性质。在两种单负(负介电常量或负磁导率)材料交替堆叠形成的一维光子晶体中,掺入了多个周期排列的单负材料缺陷层,得到在该光子晶体的零有效相位(zero-effective phase)带隙内存在孪生缺陷模。通过改变缺陷的数目或缺陷层的厚度,可调节缺陷模的频率间隔,但缺陷模的数目总保持为两个。计算结果显示,该孪生缺陷模的频率对入射角度的依赖较弱;随着入射角度的改变,缺陷模频率的相对改变量总保持在0.03以下。此外,对应缺陷模频率的电场在该光子晶体中传播时,将被强烈地局域在缺陷层与周期结构的交界面上。     

单轴各向异性左手介质表面的Goos-H?nchen位移

分析了单轴各向异性左手介质表面的Goos-H?nchen位移，分别给出了光轴与两种介质的界面垂直和平行情形下的Goos-H?nchen位移解析表达式，并分析了Goos-H?nchen位移产生的条件以及位移的正负情况.还采用菲涅尔近似的方法给出了临界角附近的Goos-H?nchen位移表达式，结果表明临界角附近的Goos-H?nchen位移是入射光的束腰半径和入射角的函数，并且给出了临界角入射时Goos-H?nchen位移的较为简洁的近似表达式，这样就在整个角度的取值范围内都给出了Goos-H?nchen位移的表达式. 关键词： Goos-H?nchen位移 左手介质 单轴各向异性 临界角     

各向异性圆柱掺杂光子晶体的缺陷模及其量子效应

利用光波在一维各向异性圆柱掺杂光子晶体中径向受限的条件,研究了光波在其中出现的模式量子效应,并利用特征矩阵法计算了TE波和TM波各模式的缺陷模的变化规律,得出了一些一维各向异性圆柱光子晶体缺陷模的新结构.缺陷模的频率和透射角都随模式量子数的增加而增大.同一模式缺陷模的频率随圆柱半径的增加而减小. 关键词： 圆柱光子晶体 各向异性介质 量子效应 缺陷模     

Rigorous solution of a problem for a cylindrical cavity containing a ferrite and a dielectric

A rigorous solution is given for modes of TM_nmo type. The complex resonant frequency _n is expressed via a transcendental characteristic equation. Some particular cases are discussed.Read at the Third All-Union Conference on Ferrites, Leningrad, 23 October 1963.     

Solving a relativistic quasipotential equation for a superposition of a nonlocal separable and a local quasipotential

Within the relativistic quasipotential approach to quantum field theory, a method is developed for solving a finite-difference quasipotential equation for the case where a total quasipotential describing the interaction of two relativistic spinless particles of unequal masses is a superposition of a nonlocal separable and a local quasipotential. The cases are investigated where the local component of the total interaction—it is assumed to be known—either admits or does not admit the existence of bound states. This makes it possible to obtain an exact expression for the increment of the phase shift, to determine the conditions of the existence of bound states, and to give a generalization of the Levinson theorem.     

Tunnelling process between a semiconductor or a metal and a polymer

The tunnelling lifetime of an electron lying in a p-type orbital localised at a given distance from a semiconductor or a metal is calculated by using Bardeen's method. It is then shown that even in the absence of broad bands, the hole injection process from semiconductors and metals into polymers should follow a Fowler-Nordheim dependence, provided that the current is not bulk-limited. In the semiconductor case, the current can be expressed by a fully analytical formula, and by an approximate one in the case of a metal. It is demonstrated that the effective Fowler-Nordheim barrier is not the mere difference between the metal work function or the semiconductor electron affinity and the HOMO level of the polymer, but a simple function of both levels. Received 6 April 2001 and Received in final form 29 May 2001     

Formation of a bistructure of a solid in a computer experiment

Molecular-dynamics was used to investigate the structural changes occurring in a three-dimensional solid when the solid is transferred from an amorphous into a crystalline state. Crystal cells of a new type — pentadecahedrons with five square lateral faces and ten regular triangular faces at the vertices of a cell — were found for the first time in a computer experiment. It is shown that a bistructure consisting of crystal cells of different types, including cells with five-fold symmetry axes, are stable in the solid. Fiz. Tverd. Tela (St. Petersburg) 40, 1919–1924 (October 1998)     

Surface polaritons in a dielectric at a boundary with a metal in a static electric field

The existence of surface polaritons in a dielectric at a boundary with an ideal metal or superconductor in a static electric field is predicted. The frequency regions in which polaritons exist are substantially different for opposite orientations of the electric field, so that a change in the direction of the field signifies “switching on” or “switching off” of surface polaritons with a fixed frequency. Pis'ma Zh. éksp. Teor. Fiz. 68, No. 12, 876–880 (25 December 1998)     

Application of a reflector with a nonuniform field in a mass-reflectron

The conditions under which the nonuniform compensating field of the reflector of the mass-reflectron can be generated with an acceptable accuracy at the symmetry axis of the reflector and extrapolated to the radial neighborhood of the axial line are determined. The plots that illustrate the distribution of the calculated nonuniform field of the reflector, the possibilities for implementation, and errors of focusing with respect to time of flight in the radial neighborhood are presented. Analytical expressions for the calculation of the time of flight of ions in the reflector in which the field distribution is described using a power series and analytical expressions for the calculation of the field distribution in the reflector in which the time of flight is determined using a power series are derived. A method for the analytical calculation of the compensating nonuniform field of the reflector based on the given dependence of the time of flight in the absence of such a field is proposed using a solution to the Abel integral equation. The solution to this equation yields analytical expressions for the calculation of the compensating field of the reflector in mass-reflectrons that contain the zero-field drift space and regions of acceleration (deceleration) of ions with a uniform field.