The influence of film thickness and process temperature on <Emphasis Type="Italic">c</Emphasis>-axis orientation of Bi<Subscript>3</Subscript>TiTaO<Subscript>9</Subscript> thin films

Bi-layered ferroelectric Bi₃TiTaO₉ (BTT) thin films with different thickness (ranging from 100 to 400 nm) were successfully fabricated on Pt(111)/TiO₂/SiO₂/(100)Si substrates using chemical solution deposition (CSD) technique at different annealing temperatures. The c-axis orientation of the films was affected by film thickness and process temperature. The thinner the film and the higher the process temperature, the higher the c-axis orientation. With the increase of film thickness, the stress decreased but the film roughness increased, which led to the decrease of c-axis orientation of films. BTT films annealed at 800°C were found to have much improved remament polarization (P _r ) than that of films annealed at 650 and 750°C. The P _r and coercive field (E _c ) values were measured to be 2 μC/cm² and 100 kV/cm, respectively. BTT films showed well-defined ferroelectric properties with grain size larger than 100 nm.     

Ba Titanate and Barium/Strontium Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric Behavior

Randomly oriented ferroelectric BaTiO₃ and (Ba_0.6Sr_0.4) TiO₃ thin films on platinum coated Si (100) were prepared by a sol-gel method. The precursor solutions were derived from barium hydroxide or a mixture of barium/strontium hydroxides dissolved in acetic acid and titanium butoxide. Polarization versus applied voltage hysteresis studies indicated a remanent polarization of 3 µC/cm² and a coercive field of 43.4 kV/cm for BaTiO₃ films annealed at 800°C for 1 h. Corresponding parameters for (Ba_0.6Sr_0.4)TiO₃ films annealed at 800°C were found to be 7.2 µC/cm² and 102.7 kV/cm, respectively. Microstructural study of the surface morphology of these films indicated grains of less than 0.1 µm in size. The leakage current for (Ba_0.6Sr_0.4)TiO₃ films was found to be two orders of magnitude lower than that for BaTiO₃ films.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Synthesis,Ferroelectric and Optical Properties of (Pb,Ca)TiO3 Thin Films by Soft Solution Processing

Calcium modified lead titanate sol was synthesized using a soft solution processing, the so-called polymeric precursor method. In soft chemistry method, soluble precursors such as lead acetate trihydrate, calcium carbonate and titanium isopropoxide, as starting materials, were mixed in aqueous solution. Pb_0.7Ca_0.3TiO₃ thin films were deposited on platinum-coated silicon and quartz substrates by means of the spinning technique. The surface morphology and crystal structure, dielectric and optical properties of the thin films were investigated. The electrical measurements were conducted on metal-ferroelectric-metal (MFM) capacitors. The typical measured small signal dielectric constant and dissipation factor at a frequency of 100 kHz were 299 and 0.065, respectively, for a thin film with 230 nm thickness annealed at 600°C for 2 h. The remanent polarization (2P_r) and coercive field (E _c) were 32 C/cm² and 100 kV/cm, respectively. Transmission spectra were recorded and from them, refractive index, extinction coefficient, and band gap energy were calculated. Thin films exhibited good optical transmissivity, and had optical direct transitions. The present study confirms the validity of the DiDomenico model for the interband transition, with a single electronic oscillator at 6.858 eV. The optical dispersion behavior of PCT thin film was found to fit well the Sellmeir dispersion equation. The band gap energy of the thin film, annealed at 600°C, was 3.56 eV. The results confirmed that soft solution processing provides an inexpensive and environmentally friendly route for the preparation of PCT thin films.     

Study of the structure and mechanical properties of hexagonal BaTiO3 thin films prepared by sol鈥揼el processing

Hexagonal barium titanate (HBT) thin films were prepared on borosilicate plate substrates via sol–gel method using the dip-coating process. The structure, texture and morphology of the thin film were analyzed by X-ray diffraction, atomic force microscopy, nanoindentation technique, and transmission electron microscopy. The results showed that the thin film annealed at 700?°C crystallized with BaTiO₃ hexagonal phase and traces of Ba₂TiO₄ (secondary phase). The nanoparticles and the RMS roughness of the sample treated at 700?°C presented high values when compared with those thermally treated at lower temperatures. The hardness and Youngs??modulus of the thin films increased with increasing in grain size, and the thin film annealed at 700?°C with crystallite size about 10?nm presented multiple “pop-in??events during nano-indentation loading curves. The annealing temperature, growth size and surface roughness were discussed in connection with the HBT mechanical properties.     

Preparation and Characterization of TiO2 Thin Films by Sol-Gel Method

Titanium dioxide (TiO₂) thin films have been deposited on silicon and glass substrates by the sol-gel process using titanium iso-propoxide [Ti(O-i-C₃H₇)₄]. The bond configuration of the TiO₂ thin films was analyzed by using FTIR in the wavenumber range from 400 to 4000 cm^–1. The spectral transmittance of as-deposited TiO₂ films deposited on fused silica glass was measured in the wavelength range from 200 to 900 nm. X-ray diffraction measurements were performed to determine the crystallinity of the TiO₂ films. As-deposited films were amorphous. As the film was annealed at higher temperature, the structure was transformed from amorphous to the anatase crystalline state. The chemical composition of the deposited film was investigated using X-ray photoelectron spectroscopy (XPS). The films are essentially stoichiometric with carbon as the dominant impurity on the surface. Raman spectra show the characteristic of TiO₂ anatase phase. The electrical properties of the TiO₂ films were measured using capacitance-voltage (C-V) and current-voltage techniques. From C-V measurements, the dielectric constants were calculated to be approximately 26 for the as-deposited films and 75–82 for films annealed at 700°C in different atmosphere. For the as-deposited samples, the breakdown voltage was 2.7 MV/cm, and for an electric field of 1 MV/cm, the leakage current was 5 × 10^–5 A/cm² and the resistivity was 2.2 × 10¹⁰ -cm.     

Annealing Temperature Dependence of the Size of C60 Clusters in C60-Doped Silicon Oxide Films

C₆₀-doped silicon oxide thin films were prepared by spin-coating a viscous solution formed upon soaking at 40°C an acidic toluene/ethanol solution of C₆₀, phenyltriethoxysilane, and tetraethoxysilane with a C₆₀–to–Si molar ratio of 2.5 × 10^–3. The films were submitted to annealing at 300–500°C in Ar to investigate variation in the size of C₆₀ clusters embedded in the films by photoluminescence spectroscopy. The film before annealing was found to contain the clusters consisting of ca. 60 C₆₀ molecules, suggesting that C₆₀ is present well-dispersed in the film. The molecules in the film aggregated to increase the size with increasing annealing temperature, indicating that the molecules diffuse easily in the film upon heating and therefore the size of the clusters is controllable with the annealing temperature.     

Characteristics of Ag/Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by sol-gel processing

The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi_3.25La_0.75Ti₃O₁₂ (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formation and electrical characteristics of Ag/BLT/p-Si heterostructure were investigated. The BLT thin films annealed at from 500°C to 650°C are polycrystalline, with no pyrochlore or other second phases. The C-V curves of Ag/BLT/p-Si heterostructure annealed at 600°C show a clockwise C-V ferroelectric hysteresis loops and obtain good electrical properties with low current density of below 2×10⁻⁸ A/cm² within ±4 V, a memory window of over 0.7 V for a thickness of 400 nm BLT films. The memory window enlarges and the current density reduces with the increase of annealing temperature, but a annealing temperature over 600°C is disadvantageous for good electrical properties.     

Influence of thermal annealing on the microstructure,hardness and corrosion behavior of TiAlSiCuN nanocomposite films

Nanocomposite TiAlSiCuN films were deposited on high speed steels by filtered magnetic arc ion plating. Detailed properties of the films annealed at various temperatures are studied. After thermal annealing at different temperatures ranging from 400 to 800 °C, changes in the film micro‐structure, chemical and phase composition, surface morphology, hardness and polarization curve properties were systematically characterized by X‐ray diffraction, X‐ray photoelectron spectroscopy, scanning electron microscopy, nano‐indenter and electrochemical workstation, respectively. It was found that the TiAlSiCuN films could be fully oxidized at 800 °C, Al and Ti atoms all diffused outwards and formed dense protective Al₂O₃ and TiO₂ layer. Simultaneously, the TiAlN phase gradually disappeared. The films annealed at 400 °C obtained the highest hardness because of the certain grain growth and little generated oxides. Besides, the certain formation of dense protective Al₂O₃ layer made the TiAlSiCuN film annealed at 600 °C present the least corrosion current density and the corrosion voltage. Copyright © 2016 John Wiley & Sons, Ltd.     

Fabrication of Ordered TiO2 Porous Thin Films by Sol-Dipping PS Template Method

Monolayer polystyrene spheres (∼400 nm) array templates were assembled orderly on clean glass substrates by dip-drawing method from emulsion of PS and porous TiO₂ thin films were prepared by using sol-dipping template method to fill TiO₂ sol into the interstices among the close-packed PS templates and then annealing to remove the PS templates. The effects of TiO₂ precursor sol concentration and dipping time in sol on the porous structure of the thin films were studied. The results showed pore size of the ordered TiO₂ porous thin film depended mainly on PS size and partly on TiO₂ sol concentration. The shrinkage of pore diameter was about 10% for 0.2 M and 20% for 0.4 M TiO₂ sol concentrations. X-ray diffraction (XRD) spectra indicated the porous thin film was anatase structure. The transmittance spectrum showed that optical transmittance of the porous thin film kept above 70% beyond the wavelength of 430 nm. Optical band-gap of the porous TiO₂ thin film (fired at 550^∘;C) was 3.12 eV.     

High performance distributed CPW phase shifters with etched BST thin films on Ф 3″ LaAlO3 substrates

The design, fabrication and microwave properties of distributed coplanar waveguide (CPW) phase shifters using etched Ba_0.6Sr_0.4TiO₃ (BST) thin films on Ф 3″ LaAlO₃ (100) substrates were investigated. The BST thin films employed in the circuits are deposited by RF magnetron sputtering, and then annealed at 800 °C for 30 min in air. BST thin films parallel-plate capacitors were fabricated by photolithography and etching process. At 10 kHz and 600 kV/cm electric field, the dielectric tunability, remanent polarization (2P_r) and the coercive electric field (2E_C) of BST film were 28.7%, 2.265 μC/cm² and 38.8 kV/cm, respectively. The loss tangent was 0.005 at zero electric field. The CPW phase-shifter designed was subsequently fabricated by optimum BST thin films and thickened top electrodes. At 21.3 GHz and 35 V, 360° phase shift was achieved, the insertion loss was −8.5 dB, the ?gure-of-merit (FOM) was 42.4°/dB, and the return loss was −12.1 dB.     

Preparation of Ba(Ti,Sn)O<Subscript>3</Subscript> thin films by PVP-assisted sol–gel method and their dielectric properties

Ba(Ti_1−x Sn _x )O₃ (x = 0.10 or 0.15) thin films were deposited on Si(100) and Pt(111)/TiO _x /SiO₂/Si(100) substrates via sol–gel spin-coating. Crack-free thin films could be obtained by single-step deposition, where the thickness was about 0.46 and 0.29 μm at 1000 and 2000 rpm, respectively. Circular delaminated parts 100 μm in diameter, however, tended to appear in thicker films deposited at 1000 rpm. On both kinds of substrates, the films were crystallized between 500 and 600 °C, where the perovskite phase emerged as the primary phase, and the formation of single-phase perovskite was basically achieved between 700–800 °C. The films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates, however, tended to have small SnO₂ and BaCO₃ diffraction peaks, which decreased with increasing spinning rate. The dielectric properties were evaluated on the films deposited on Pt(111)/TiO _x /SiO₂/Si(100) substrates at 2000 rpm. The films prepared by single-step depositions had dielectric constants of 350 and 230, and dielectric loss of 0.30 and 0.10 at x = 0.1 and 0.15, respectively. The films prepared by two time deposition had dielectric constants of 450 and 250, and dielectric loss of 0.21 and 0.19 at x = 0.10 and 0.15, respectively.     

Low temperature nanostructured lithium titanates: controlling the phase composition, crystal structure and surface area

Low temperature lithium titanate compounds (i.e., Li₄Ti₅O₁₂ and Li₂TiO₃) with nanocrystalline and mesoporous structure were prepared by a straightforward aqueous particulate sol–gel route. The effect of Li:Ti molar ratio was studied on crystallisation behaviour of lithium titanates. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) revealed that the powders were crystallised at the low temperature of 500 °C and the short annealing time of 1 h. Moreover, it was found that Li:Ti molar ratio and annealing temperature influence the preferable orientation growth of the lithium titanate compounds. Transmission electron microscope (TEM) images showed that the average crystallite size of the powders annealed at 400 °C was in the range 2–4 nm and a gradual increase occurred up to 10 nm by heat treatment at 800 °C. Field emission scanning electron microscope (FE-SEM) analysis revealed that the deposited thin films had mesoporous and nanocrystalline structure with the average grain size of 21–28 nm at 600 °C and 49–62 nm at 800 °C depending upon the Li:Ti molar ratio. Moreover, atomic force microscope (AFM) images confirmed that the lithium titanate films had columnar like morphology at 600 °C, whereas they showed hill-valley like morphology at 800 °C. Based on Brunauer–Emmett–Taylor (BET) analysis, the synthesized powders showed mesoporous structure containing pores with needle and plate shapes. The surface area of the powders was enhanced by increasing Li:Ti molar ratio and reached as high as 77 m²/g for the ratio of Li:Ti = 75:25 at 500 °C. This is one of the smallest crystallite size and the highest surface areas reported in the literature, and the materials could be used in many applications such as rechargeable lithium batteries and tritium breeding materials.     

Optical Properties of Mg x Zn1−x O Polycrystalline Thin Films Prepared by Sol-Gel Deposition Method

The Mg _x Zn_1–x O alloy thin films were synthesized on Si and quartz substrates by the sol-gel deposition method. The transmittance and cathodoluminescence spectra of the Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O nanoparticle films were obtained at room temperature. It was found that the bandgap of Mg_0.05Zn_0.95O and Mg_0.15Zn_0.85O films is as large as 3.72 eV and 3.79 eV, respectively. The ultraviolet emission peaks are located at 376 nm and 370 nm, respectively, for the samples annealed at 600°C. When the annealing temperature is elevated to 1000°C, the band-gap decreases to 3.42 eV and an emission line related to the deep-level defect appears at 500 nm. The mechanism behind these phenomena is discussed.     

Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors

Highly transparent In-Ga-Zn oxide (IGZO) thin films were fabricated by spin coating using acetate- and chlorate-based precursors, and thin film transistors (TFTs) were further fabricated employing these IGZO films as the active channel layer. The impact of the post-annealing temperature on the physical properties of IGZO films and performance of IGZO TFTs were investigated. Compared to the nitrate-based IGZO precursor, the chlorate-based precursor increases the phase change temperature of IGZO thin films. The IGZO films changed from amorphous to nanocrystalline phase in an annealing temperature range of 600–700 °C. The transparency is more than 90% in the visible region for IGZO films annealed with temperatures higher than 600 °C. With the increase of post-annealing temperature, the carrier concentration of IGZO film decreases, while the sheet resistance increases firstly and then saturates. The bottom-gate TFT with IGZO channel annealed at 600 °C in oxygen showed the best performance, which was operated in n-type enhancement mode with a field effect mobility of 1.30 cm²/V s, a threshold voltage of 10 V, and a drain current on/off ratio of 2.5 × 10⁴.     

Fabrication and properties of xBiFeO3-(1 − x)Bi4Ti3O12 system by sol–gel process

The thin films of mixture of xBiFeO₃-(1 − x)Bi₄Ti₃O₁₂ (x = 0.4, 0.5, and 0.6) system were prepared by a sol–gel process. The thicknesses of the thin films were 540, 500, and 570 nm, respectively. The crystal structure of all thin films annealed at 650 °C was analyzed by X-ray diffraction. It was found that the thin films at x = 0.4 and 0.5 mainly consisted of a Bi₄Ti₃O₁₂ phase while Bi₅Ti₃FeO₁₅ was the major phase of the thin film at x = 0.6. The thin film (x = 0.6) showed better ferroelectric properties in remnant polarization and polarization fatigue than those observed in the thin films (x = 0.4 and 0.5). The values of remnant polarization 2P _r and coercive field 2E c of the thin film at x = 0.6 were 36 μC/cm² and 192 kV/cm at an applied electric field of 260 kV/cm, respectively. There was almost no polarization fatigue up to 10¹⁰ switching cycles. Also weak ferromagnetism was observed in the thin film at x = 0.6.     

Tailoring of morphology and crystal structure of nanomaterials in MgO–TiO2 system by controlling Mg:Ti molar ratio

The morphological manipulation and structural characterisation of TiO₂?CMgO binary system by an aqueous particulate sol?Cgel route were reported. Different crystal structures including pure MgTiO₃, mixtures of MgTiO₃ and TiO₂ and mixtures of MgTiO₃ and Mg₂TiO₄ were tailored by controlling Mg:Ti molar ratio and annealing temperatures as the processing parameters. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) revealed that all compounds crystallised at the low temperature of 500?°C. Furthermore, it was found that the average crystallite size of the compounds depends upon the Mg:Ti molar ratio as well as the annealing temperature, being in the range 3?C5?nm at 500?°C and around 6?nm at 700?°C. Field emission scanning electron microscope (FE-SEM) analysis revealed that the deposited thin films had nanocrystalline structure with the average grain size of 25?C30?nm at 500?°C depending upon the Mg:Ti molar ratio. Moreover, atomic force microscope (AFM) images presented that the thin films had a hill-valley like morphology made up of small grains.     

Effect of Europium Ion Concentrations on the Photoluminescence Emission of Nano-Crystalline BaTiO<Subscript>3</Subscript> Prepared by Sol–Gel Technique

Nano-crystalline. ferroelectric Eu³⁺: BaTiO₃ powders and thin films have been prepared using (Ba(Ac)₂), and titanium butoxide (Ti(C₄H₉O)₄), as precursors. The thin films were prepared by spin coating using the sol–gel method. The evolution of the network bonds and the structural characterization of the prepared samples was studied by Fourier Transform Infrared Spectrometer (FTIR) and X-ray diffraction (XRD) techniques, respectively. The as-grown thin films and powders were found to be amorphous, and crystallized to the tetragonal phase after annealing at 750^∘C in air for 30 min. The crystallite size of the doped sample with 4% Eu³⁺ ions in the form of thin film and powder was found to be equal to = 21 and 32 nm, respectively.The photoluminescence of nano-crystalline powders and thin films at 488 nm were reported. The luminescence spectra of ultra fine Eu³⁺: BaTiO₃ powders and thin films are dominated by the ⁵D₀ → ⁷F_j (j = 0−4) transitions, suggesting a strong distortion of the Eu³⁺ sites. The disorder contributes, together with the presence of numerous charge compensation mechanisms, to the strong inhomogeneous broadening of the ⁵D₀ → ⁷F_j luminescence band of the Eu³⁺.     

The influence of titanium dioxide phase composition on dyes photocatalysis

A comparative study of TiO₂ powders prepared by sol–gel methods is presented. Titanium tetraisopropoxide was used as the precursor for the sol–gel processes. The effects of the annealing treatment on phase, crystallite size, porosity and photodegradation of dyes (methyl orange and methylene blue) were studied. The phase structure, microstructure and surface properties of the films were characterized by using X-ray diffraction (XRD) and Atomic Force Microscopy (AFM). The X-ray diffraction was used for crystal phase identification, for the accurate estimation of the anatase–rutile ratio and for the crystallite size evaluation of each polymorph in the samples. It was found that the only TiO₂ anatase phase of the synthesized TiO₂ develops below 500 °C, between 600 and 800 °C the anatase coexist with rutile and above 800 °C only the rutile phase was found in the samples. Attention has been paid not only to crystal structures, but also to the porosity, the particle size and the photocatalytic properties. However, the annealing temperature was found to have significant influence on the photocatalytic properties. Different TiO₂ doctor blade thin films were obtained mixing the sol gel powder (100% anatase) and TiO₂ Aldrich with TiO₂ Degussa P25. The surfactant (Triton X100 or sodium dodecyl sulfate) affects the packing density of the particles during deposition and the photocatalytic degradation efficiency of the dyes. The photocatalytic degradation kinetics of methyl orange and methylene blue using TiO₂ thin film were investigated.     

The microstructure and magnetic properties of Ni<Subscript>0.4</Subscript>Zn<Subscript>0.6</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> films prepared by spin-coating method

Nickel zinc ferrite (Ni_0.4Zn_0.6Fe₂O₄) films on Si (100) substrate were synthesized using a spin-coating method. The crystallinity of the Ni_0.4Zn_0.6Fe₂O₄ films with the thickness of about 386 nm became better as the annealing temperature increased. The films have smooth surface, relatively good packing density and uniform thickness. The volatilization of Zn is serious at 900 °C. With the increase of annealing temperature, the saturation magnetization M _s increases in the temperature ranging from 400 to 700 °C, however, decreases above 700 °C, and the coercivity H _c increases in the temperature range 400–800 °C, decreases above 800 °C. After annealed at 700 °C for 2 h in air with the heating rate 2 °C/min, the film shows a maximum saturation magnetization M _s of 349 emu/cc and low coercivity H _c of 66 Oe. The M _s is higher than others which prepared by this method, however, the H _c is lower. The M _s of Ni_0.4Zn_0.6Fe₂O₄ films annealed at 700 °C increases with increasing annealing time and the H _c changes slightly.