Thermoelectric properties and microstructure of Mg3Sb2

Mg₃Sb₂ has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg₃Sb₂ were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K.     

Crystal structures and magnetic properties of CeAu4Si2 and CeAu2Si2

Single crystals of CeAu₄Si₂ and CeAu₂Si₂ have been grown out of ternary fluxes rich in Au, and the former, also by sintering the stoichiometric composition at 750 °C. The single-crystal X-ray refinement result for CeAu₄Si₂ is orthorhombic, Cmmm (No. 65, Z=2), different from a tetragonal result found from an X-ray powder diffraction refinement [H. Nakashima, et al., J. Alloys Compds. 424 (2006) 7]. For CeAu₂Si₂, this is the first report of the stoichiometric crystalline phase, in the known tetragonal I4/mmm structure. The anisotropic field- and temperature-dependent magnetizations, as well as specific heat and resistivity data are compared. Although both compounds have related structural packing, they present unique magnetic features. CeAu₂Si₂ is a typical antiferromagnet with T_N=8.8(1) K and CeAu₄Si₂ features a ferromagnetic component below T_c=3.3(1) K. Both phases have effective moments close in value to that of free Ce³⁺.     

Structure and properties of a novel cobaltate La0.30CoO2

The layered cobaltate La_0.30CoO₂ was prepared from Na_xCoO₂ precursor by a solid-state ionic exchange and was characterized by means of X-ray and neutron diffraction, magnetic, thermal and electric transport measurements. The compound consists of hexagonal sheets of edge-sharing CoO₆ octahedra interleaved by lanthanum monolayers. Compared to Na⁺ in the parent system, the La³⁺ ions occupy only one-third of available sites, forming a 2-dimensional superstructure. The deviation from the ideal stoichiometry La_1/3CoO₂ introduces extra hole carriers into the diamagnetic LS Co³⁺ matrix making the sample Pauli paramagnetic. The temperature dependence of the electrical conductivity in La_0.30CoO₂ follows Mott's T^−1/3 law up to about 400 K, which is in contrast with the standard metallic behavior in the Na⁺ homolog possessing the same formal doping. The experiments are complemented by electronic structure calculations for La_0.30CoO₂ and related Na_xCoO₂ systems.     

Li2O-Na2O-B2O3-SiO2烧结助剂对BaAl2Si2O8陶瓷结构与介电性能的影响

采用传统固相反应工艺,按化学计量比合成BaO-Al_2O3-SiO_2(BAS)-x%(w/w) Li_2O-Na_2O-B_2O3-SiO_2(LNBS)(x=0,1,2,3,4)陶瓷。研究不同LNBS烧结助剂添加量对BAS系微波介质陶瓷的结构和介电性能的影响。通过Clausius-Mossotti公式计算讨论了BAS理论与实验介电常数(εr)的差异。研究结果表明:LNBS烧结助剂中Li+进入钡长石Al3+位或单四元环(S4R)间隙,并产生了O_2-空位或Ba2+空位,从而促进BAS六方相向单斜相的转变。添加适量的LNBS烧结助剂后,BAS陶瓷的烧结温度从1 400℃降低到1 325℃,同时BAS陶瓷样品密度、品质因数(Qf)值以及频率温度系数(τf)得到改善。当x=1,烧结温度为1 325℃时,可获得综合性能相对较好的BAS陶瓷,其介电性能:Qf=35 199 GHz,εr=6.37,τf=-1.613×10-5℃-1。     

The effect of element substitution on high-temperature thermoelectric properties of Ca3Co2O6 compounds

Polycrystalline Ca₃Co_1.8M_0.2O₆ (M=Mn, Fe, Co, Ni, Cu) and Ca_2.7Na_0.3Co₂O₆ were synthesized by solid-state reaction to evaluate the effect of substitution on the thermoelectric properties of Ca₃Co₂O₆. Substitution by Mn, Cu and Na appears to increase carrier density, given that electrical resistivity (ρ) and the Seebeck coefficient (S) were simultaneously reduced. Conversely, Fe substitution seems to reduce carrier density, resulting in a simultaneous increase in S and ρ. Cu and Na substitution resulted in a significant decrease in ρ due to enhancement of grain size and grain boundary connectivity, which could have a strong impact on ρ. Not only the intrinsic substitution effect on the electronic state but also this modification of the microstructure plays an important role in improvement of the thermoelectric power factor, particularly in the case of the Na-substituted sample.     

XRD and Si MAS-NMR spectroscopy across the β-Lu2Si2O7-β-Y2Si2O7 solid solution

Samples in the system Lu_2−xY_xSi₂O₇ (0?x?2) have been synthesized following the sol-gel method and calcined to 1300 °C, a temperature at which the β-polymorph is known to be the stable phase for the end-members Lu₂Si₂O₇ and Y₂Si₂O₇. The XRD patterns of all the compositions studied are compatible with the structure of the β-polymorph. Unit cell parameters are calculated as a function of composition from XRD patterns. They show a linear change with increasing Y content, which indicates a solid solubility of β-Y₂Si₂O₇ in β-Lu₂Si₂O₇ at 1300 °C. ²⁹Si MAS NMR spectra of the different members of the system agree with the XRD results, showing a linear decrease of the ²⁹Si chemical shift with increasing Y content. Finally, a correlation reported in the literature to predict ²⁹Si chemical shifts in silicates is applied here to obtain the theoretical variation in ²⁹Si chemical shift values in the system Lu₂Si₂O₇-Y₂Si₂O₇ and the results compare favorably with the values obtained experimentally.     

Electronic properties and rare-earth ions photoluminescence behaviors in borosilicate: SrB2Si2O8

Undoped and RE ions doped SrB₂Si₂O₈ were successfully synthesized. After the application of UV and VUV spectroscopy measurements, we made a novel discovery that the emission of SrB₂Si₂O₈:Eu prepared in air can be switched between red and blue by the different excitations. The information is that quite a part of Eu³⁺ was spontaneously reduced to Eu²⁺ in air. The PL properties of Eu²⁺ in VUV and Eu³⁺, Ce³⁺ and Tb³⁺ in UV-VUV region in SrB₂Si₂O₈ were evaluated for the first time. The excitation mechanisms of the O²⁻-Eu³⁺ CT, Ce³⁺f-d and Tb³⁺f-d transitions in UV region as well as the Eu³⁺f-d, O²⁻-Ce³⁺ CT, O²⁻-Tb³⁺ CT transitions and the host lattice absorption in VUV region were established. In addition, first principles calculation within the LDA of the DFT was applied to calculate the electronic structure and linear optical properties of SrB₂Si₂O₈ and the results were compared with the experimental data.     

Structure and magnetic properties of Ca14MnP11

The compound Ca₁₄MnP₁₁ crystallizes in the Ca₁₄AlSb₁₁ structure type with the tetragonal space group I4₁/acd (Z=8) and lattice parameters of , c=20.7565(9) at 90 K. The structure consists of MnP₄⁹⁻ tetrahedron, P₃⁷⁻ trimer, 4 P³⁻ isolated anions and 14 Ca²⁺ cations. Similar to other compounds of this structure type containing phosphorous, the P₃⁷⁻ trimer has a central P atom that is best modeled in the structure as being equally split between two sites. In addition, there is no additional distortion of the manganese-containing tetrahedron compared with the main group analog, Ca₁₄GaP₁₁, suggesting that the Mn oxidation state is Mn²⁺. Temperature-dependent magnetic susceptibility shows that the compound is paramagnetic over the entire temperature range measured (2-300 K). The data can be fit with a modified Curie-Weiss law and provide an effective magnetic moment of 5.80 (2) B.M. with a Weiss constant of −2.13(2) K and . This moment is significantly higher than those measured for any of the Mn-containing analogs and is consistent with Mn²⁺. This result will be discussed in light of the electron counting scheme for Mn compounds of the Ca₁₄AlSb₁₁ structure-type.     

Crystal structure of BaMg2Si2O7 and Eu luminescence

Crystal structure of BaMg₂Si₂O₇ was determined and refined by a combined powder X-ray and neutron Rietveld method (monoclinic, C2/c, no. 15, Z=8, a=7.24553(8) Å, b=12.71376(14) Å, c=13.74813(15) Å, β=90.2107(8)°, V=1266.44(2) Å³; R_p/R_wp=3.38%/4.77%). The structure contains a single crystallographic type of Ba atom coordinated to eight O atoms with C₁ (1) site symmetry. Under 325-nm excitation Ba_0.98Eu_0.02Mg₂Si₂O₇ exhibits an asymmetric emission band around 402 nm. The asymmetric shape of the emission band is likely associated with a small electron-phonon coupling in BaMg₂Si₂O₇. The integrated intensity of the emission band was observed to remain constant over the temperature range 4.2-300 K.     

Crystal structure, characterization and thermoelectric properties of the type-I clathrate Ba8−ySryAl14Si32 (0.6≤y≤1.3) prepared by aluminum flux

The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3?n. Electron microprobe characterization indicates the composition to be Ba_8−ySr_yAl_14.2(2)Si_31.8(2) (0.77<y<1.3). Single-crystal X-ray diffraction data (90 and 12 K) were refined with the Al content fixed at the microprobe value (12 K data: R₁=0.0233, wR₂=0.0441) on a crystal of compositions Ba. The Sr atom preferentially occupies the 2a position; mixed Al/Si occupancy was found on all framework sites. These refinements are consistent with a fully occupied framework and nearly fully occupied cation guest sites as found by microprobe analysis. Temperature dependent electrical resistivity and thermal conductivity have been measured from room temperature to 1200 K on a hot-pressed pellet. Electrical resistivity reveals metallic behavior. The negative Seebeck coefficient indicates transport processes dominated by electrons as carriers. Thermal conductivity is between 22 and 25 mW/cm K. The sample shows n-type conductivity with a maximum figure of merit, zT of 0.3 at 1200 K. A single parabolic band model predicts a five-fold increase in zT at 800 K if carrier concentration is lowered.     

EuZn2Si2 and EuZn2Ge2 Grown from Zn or Ga(ln)/Zn Flux

Single crystals of the novel ternary compounds EuZn₂Si₂ and EuZn₂Ge₂ were grown from pure gallium, indium, or zinc metal used as a flux solvent. Crystal properties were characterized using X-ray single-crystal analyses via Gandolfi and Weissenberg film techniques and by four-circle X-ray single-crystal diffractometry. The new compounds crystallize with ternary derivative structures of BaAl₄, i.e., EuZn₂Si₂ with ThCr₂Si₂-type (a=0.42607(2) nm, c=1.03956(5) nm, I4/mmm, R₁=0.038) and EuZn₂Ge₂ with CaBe₂Ge₂-type (a=0.43095(2) nm, c=1.07926(6) nm, P4/nmm, R₁=0.067). XAS and magnetic measurements on EuZn₂Si₂ and EuZn₂Ge₂ revealed in both compounds the presence of Eu²⁺ ions carrying large magnetic moments, which order magnetically at low temperatures. The magnetic phase transition occurs at T_N=16 and 7.5 K for the silicide and the germanide, respectively. In EuZn₂Si₂ there occurs a spin reorientation at 13 K and furthermore some canting of antiferromagnetically ordered moments below about 10 K. In EuZn₂Ge₂ a canted antiferromagnetic structure is formed just at T_N.     

High-temperature thermoelectric studies of A11Sb10 (A=Yb, Ca)

Large samples (6-8 g) of Yb₁₁Sb₁₀ and Ca₁₁Sb₁₀ have been synthesized using a high-temperature (1275-1375 K) flux method. These compounds are isostructural to Ho₁₁Ge₁₀, crystallizing in the body-centered, tetragonal unit cell, space group I4/mmm, with Z=4. The structure consists of antimony dumbbells and squares, reminiscent of Zn₄Sb₃ and filled Skutterudite (e.g., LaFe₄Sb₁₂) structures. In addition, these structures can be considered Zintl compounds; valence precise semiconductors with ionic contributions to the bonding. Differential scanning calorimetry (DSC), thermogravimetry (TG), resistivity (ρ), Seebeck coefficient (α), thermal conductivity (κ), and thermoelectric figure of merit (zT) from room temperature to at minimum 975 K are presented for A₁₁Sb₁₀ (A=Yb, Ca). DSC/TG were measured to 1400 K and reveal the stability of these compounds to ∼1200 K. Both A₁₁Sb₁₀ (A=Yb, Ca) materials exhibit remarkably low lattice thermal conductivity (∼10 mW/cm K for both Yb₁₁Sb₁₀ and Ca₁₁Sb₁₀) that can be attributed to the complex crystal structure. Yb₁₁Sb₁₀ is a poor metal with relatively low resistivity (1.4 mΩ cm at 300 K), while Ca₁₁Sb₁₀ is a semiconductor suggesting that a gradual metal-insulator transition may be possible from a Ca_11−xYb_xSb₁₀ solid solution. The low values and the temperature dependence of the Seebeck coefficients for both compounds suggest that bipolar conduction produces a compensated Seebeck coefficient and consequently a low zT.     

Enhanced thermoelectric performance and novel nanopores in AgSbTe2 prepared by melt spinning

We report a melt-spinning spark-plasma-sintering synthesis process of the polycrystalline p-type material composed of AgSbTe₂ coarse grains and evenly formed 5-10 nm pores that occur primarily on the surface of matrix grains. The formation mechanism of nanopores and their influences on the thermoelectric properties have been studied and correlated. Microstructure analysis shows that the as-prepared sample can be regarded as a nanocomposite of matrix and in situ generated nanopores evenly coated on matrix grains. For the single-phase component and the possible energy-filter effect caused by the nanopores, the electrical transport properties are improved. Moreover, the thermal conductivity is significantly reduced by strong phonon scattering effect resulted from the nanopores. The thermoelectric performance of the as prepared sample enhances greatly and a ZT of 1.65 at 570 K is achieved, increasing∼200% compared with the sample prepared by traditional melt and slow-cooling method.     

Synthesis and spectroscopic characterization of P-doped Na4Si4

Na₄Si₄ is a Zintl salt composed of Na⁺ cations and tetrahedral anions and is a unique solid-state precursor to clathrate structures and nanomaterials. In order to provide opportunities for the synthesis of complex materials, phosphorus was explored as a possible substituent for silicon. Phosphorus doped sodium silicides Na₄Si_4−xP_x (x≤0.04) were prepared by reaction of Na with the mechanically alloyed Si_4−x:P_x (x=0.04, 0.08, 0.12) mixture in a sealed Nb tube at 650 °C for 3 days. Energy dispersive X-ray spectroscopy confirms the presence of P in all products. Powder X-ray diffraction patterns are consistent with the retention of the Na₄Si₄ crystal structure. As the amount of P increases, a new peak in the diffraction pattern that can be assigned to black phosphorus is apparent above the background. Raman and solid-state NMR provide information on phosphorus substitution in the Na₄Si₄ structure. Raman spectroscopy shows a shift of the most intense band assigned to the ν₁ (A₁) mode from 486.4 to 484.0 cm⁻¹ with increasing P, consistent with P replacement of Si. Differential nuclear spin-lattice relaxation for the Si sites determined via ²⁹Si solid-state NMR provides direct evidence for Si-P bonding in the (Si_1−xP_x)⁴⁻ tetrahedron. The ²³Na NMR shows additional Na…P interactions and the ³¹P NMR shows two P sites, consistent with P presence in both of the crystallographic sites in the (Si₄)⁴⁻ tetrahedron.     

Fluorescence and phosphorescence properties of the low temperature forms of the MAl2Si2O8:Eu (M=Ca, Sr, Ba) compounds

The fluorescence and phosphorescence properties of Europium-doped MAl₂Si₂O₈ (M=Ca, Sr, Ba) are reinvestigated and discussed on the basis of the propensity of an activator to agglomerate with an oxygen vacancy. Due to a stronger attraction of the anion vacancy towards Eu²⁺ cations going from BaAl₂Si₂O₈ to SrAl₂Si₂O₈ and CaAl₂Si₂O₈ host lattices, the interpretation of the fluorescence spectra turns out to be less trivial in the Ca and Sr host lattices than in the Ba one and requests the account for Eu²⁺ cations lying at alkaline-earth sites with or without vacancy in their neighborhood. Phosphorescence in these compounds is highlighted.     

X-ray structural study of intermetallic alloys RT2Si and RTSi2 (R=rare earth, T=noble metal)

Two series of intermetallic alloys, RT₂Si and RTSi₂, have been synthesized from stoichiometric compositions. The crystal structures of EuPt_1+xSi_2−x (CeNiSi₂-type), CeIr₂Si (new structure type), YbPd₂Si and YbPt₂Si (both YPd₂Si-type) have been elucidated from X-ray single crystal CCD data, which were confirmed by XPD experiments. The crystal structures of LaRh₂Si and LaIr₂Si (CeIr₂Si-type), {La,Ce,Pr,Nd}AgSi₂ (all TbFeSi₂-type), and EuPt₂Si (inverse CeNiSi₂-type) were characterized by XPD data. RT₂Si/RTSi₂ compounds were neither detected in as-cast alloys Sc₂₅Pt₅₀Si₂₅, Eu₂₅Os₂₅Si₅₀ and Eu₂₅Rh₂₅Si₅₀ nor after annealing at 900 °C. Instead, X-ray single crystal data prompted Eu₂Os₃Si₅ (Sc₂Fe₃Si₅-type) and EuRh_2+xSi_2−x (x=0.04, ThCr₂Si₂-type) as well as a new structure type for Sc₂Pt₃Si₂ (own type).     

Thermophysical properties of SrHfO3 and SrRuO3

Polycrystalline samples of strontium series perovskite type oxides, SrHfO₃ and SrRuO₃ were prepared and the thermophysical properties were measured. The average linear thermal expansion coefficients are 1.13×10⁻⁵ K⁻¹ for SrHfO₃ and 1.03×10⁻⁵ K⁻¹ for SrRuO₃ in the temperature range between 423 and 1073 K. The melting temperatures T_m of SrHfO₃ and SrRuO₃ are 3200 and 2575 K, respectively. The longitudinal and shear sound velocities were measured by an ultrasonic pulse-echo method at room temperature in air, which enables to evaluate the elastic moduli and Debye temperature. The heat capacity was measured by using a differential scanning calorimeter, DSC in high-purity argon atmosphere. The thermal diffusivity was measured by a laser flash method in vacuum. The thermal conductivities of SrHfO₃ and SrRuO₃ at room temperature are 5.20 and 5.97 W m⁻¹ K⁻¹, respectively.     

WS2/CuGa2O4复合材料的制备及其气敏性

采用共沉淀法制备了CuGa₂O₄纳米材料,并利用水热法制备了一系列WS₂/CuGa₂O₄复合材料。结合X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)等对制备的材料进行了物相组成、表面形貌以及元素价态的分析。研究了WS₂的复合量对 CuGa₂O₄材料检测乙醇气体敏感性能的影响。实验结果表明,当 WS₂与 CuGa₂O₄质量比为 1%时,该复合材料制备的传感器在室温下对 100 μL·L^-1乙醇气体表现出 345.3 的灵敏度,响应时间和恢复时间分别为 184 和 69 s,且最低检测限为 0.1μL·L^-1。     

WS2/CuGa2O4复合材料的制备及其气敏性

采用共沉淀法制备了CuGa₂O₄纳米材料,并利用水热法制备了一系列WS₂/CuGa₂O₄复合材料。结合X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)等对制备的材料进行了物相组成、表面形貌以及元素价态的分析。研究了WS₂的复合量对CuGa₂O₄材料检测乙醇气体敏感性能的影响。实验结果表明,当WS₂与CuGa₂O₄质量比为1%时,该复合材料制备的传感器在室温下对100μL·L^-1乙醇气体表现出345.3的灵敏度,响应时间和恢复时间分别为184和69 s,且最低检测限为0.1μL·L^-1。     

Reduction of Eu to Eu in MAl2Si2O8 (M=Ca, Sr, Ba) in air condition

In general, the reduction of Eu³⁺ to Eu²⁺ in solids needs an annealing process in a reducing atmosphere. In this paper, it is of great interest and importance to find that the reduction of Eu³⁺ to Eu²⁺ can be realized in a series of alkaline-earth metal aluminum silicates MAl₂Si₂O₈ (M=Ca, Sr, Ba) just in air condition. The Eu²⁺-doped MAl₂Si₂O₈ (M=Ca, Sr, Ba) powder samples were prepared in air atmosphere by Pechini-type sol-gel process. It was found that the strong band emissions of 4f⁶5d¹-4f⁷ from Eu²⁺ were observed at 417, 404 and 373 nm in air-annealed CaAl₂Si₂O₈, SrAl₂Si₂O₈ and BaAl₂Si₂O₈, respectively, under ultraviolet excitation although the Eu³⁺ precursors were employed. In addition, under low-voltage electron beam excitation, Eu²⁺-doped MAl₂Si₂O₈ also shows strong blue or ultraviolet emission corresponding to 4f⁶5d¹-4f⁷ transition. The reduction mechanism from Eu³⁺ to Eu²⁺ in these compounds has been discussed in detail.