大长径比ZnS纳米线的制备、结构和生长机理

通过碳热辅助化学气相沉积法, 以Au作为催化剂, 在较低温度(800 益)制备了ZnS纳米线, 其尺寸均匀, 表面光滑, 直径约为40 nm, 具有很大的长径比, 是典型的单晶纤锌矿六方结构. 高分辨透射电镜和选区电子衍射分析表明, 纳米线的生长方向为[1100], 与已报道的生长方向不同. 纳米线的生长是由气-液-固(vapor-liquid-solid)机理控制的.     

Synthesis and Characterization of ZnO Nanowires

Zinc oxide is a wide bandgap (3.37 eV) semiconductor with a hexagonal wurtzite crystal structure. ZnO prepared in nanowire form may be used as a nanosized ultraviolet light-emitting source. In this study, ZnO nanowires were prepared by vapor-phase transport of Zn vapor onto gold-coated silicon substrates in a tube furnace heated to 900 ?C. Gold serves as a catalyst to capture Zn vapor during nanowire growth. Size control of ZnO nanowires has been achieved by varying the gold film thickness…     

Synthesis, Structure and Growth Mechanism of ZnS Nanowires with High Aspect Ratio

ZnS nanowires were successfully synthesized through the direct reaction of Zn and S vapor via carbon-assisted chemical evaporation deposition method with Au catalyst. The investigations indicated that the size of ZnS nanowires with a diameter of approximately 40 nm was uniform along the axis of the wire and the surfaces were slick. The ZnS nanowire with a hexagonal wurtzite structure was a typical single crystalline structure. HRTEM and SEAD results demonstrated that the nanowire grew along [100] direction, which was different from the common direction reported in literatures. The growth of nanowires was controlled by vapor-liquid-solid (VLS) mechanism.     

Enhanced nucleation, growth rate, and dopant incorporation in ZnO nanowires

Pure and Co-doped ZnO nanowire arrays were grown on polished silicon substrates with high rates via an electrochemical technique. A negative potential applied to the substrate not only enhances the nucleation density on polished substrates more than 4 orders of magnitude but also increases the growth rate by 35 times over that obtained in the absence of the potential. Furthermore, incorporation of metallic dopants in ZnO nanowires was demonstrated in the low-temperature process. This fast growth technique provides a route to fabrication of low-cost highly oriented ZnO nanowires on polished substrate for industrial applications.     

Control of the ZnO nanowires nucleation site using microfluidic channels

We report on the growth of uniquely shaped ZnO nanowires with high surface area and patterned over large areas by using a poly(dimethylsiloxane) (PDMS) microfluidic channel technique. The synthesis uses first a patterned seed template fabricated by zinc acetate solution flowing though a microfluidic channel and then growth of ZnO nanowire at the seed using thermal chemical vapor deposition on a silicon substrate. Variations the ZnO nanowire by seed pattern formed within the microfluidic channel were also observed for different substrates and concentrations of the zinc acetate solution. The photocurrent properties of the patterned ZnO nanowires with high surface area, due to their unique shape, were also investigated. These specialized shapes and patterning technique increase the possibility of realizing one-dimensional nanostructure devices such as sensors and optoelectric devices.     

Formation of gold-silver nanowires in thin surfactant solution films

Thin, long gold/silver nanowires were grown on substrates in thin surfactant solution films. This growth process occurred exclusively in thinning aqueous films as the water evaporated, and elongated surfactant template structures were formed. The nanowire growth depended on the presence of a relatively high concentration of silver ions (typical Ag:Au mole ratio of 1:1). Tuning the pH value to about 5 in the growth solution was crucial for the nanowire growth. Further development of this process may lead to a simple wet chemical technique for the fabrication of relatively uniform arrays of metal nanowires on surfaces.     

Temperature-controlled growth of ZnO nanowires and nanoplates in the temperature range 250-300 degrees C

Starting from a mixture of Zn and BiI3, we grew nanowires and nanoplates on an oxidized Si substrate at relatively low temperatures of 250 and 300 degrees C, respectively. The ZnO nanowires had diameters of approximately 40 nm and grew along the [110] direction rather than the conventional [0001] direction. The nanoplates had thicknesses of approximately 40 nm and lateral dimensions of 3-4 microm. The growth of both the nanowires and nanoplates is dominated by the synergy of vapor-liquid-solid (VLS) and direction conducting. Analysis of photoluminescence spectra suggested that the nanoplates contain more oxygen vacancies and have higher surface-to-volume ratios than the nanowires. The present results clearly demonstrate that the shapes of ZnO nanostructures formed by using BiI3 can be controlled by varying the temperature in the range 250-300 degrees C.     

Mimicking both petal and lotus effects on a single silicon substrate by tuning the wettability of nanostructured surfaces

We describe a new method of fabricating large-area, highly scalable, "hybrid" superhydrophobic surfaces on silicon (Si) substrates with tunable, spatially selective adhesion behavior by controlling the morphologies of Si nanowire arrays. Gold (Au) nanoparticles were deposited on Si by glancing-angle deposition, followed by metal-assisted chemical etching of Si to form Si nanowire arrays. These surfaces were chemically modified and rendered hydrophobic by fluorosilane deposition. Au nanoparticles with different size distributions resulted in the synthesis of Si nanowires with very different morphologies (i.e., clumped and straight nanowire surfaces). The difference in nanowire morphology is attributed to capillary force-induced nanocohesion, which is due to the difference in nanowire porosity. The clumped nanowire surface demonstrated the lotus effect, and the straighter nanowires demonstrated the ability to pin water droplets while maintaining large contact angles (i.e., the petal effect). The high contact angles in both cases are explained by invoking the Cassie-Baxter wetting state. The high adhesion behavior of the straight nanowire surface may be explained by a combination of attractive van der Waals forces and capillary adhesion. We demonstrate the spatial patterning of both low- and high-adhesion superhydrophobicity on the same substrate by the simultaneous synthesis of clumped and straight silicon nanowires. The demonstration of hybrid superhydrophobic surfaces with spatially selective, tunable adhesion behavior on single substrates paves the way for future applications in microfluidic channels, substrates for biologically and chemically based analysis and detection where it is necessary to analyze a particular droplet in a defined location on a surface, and as a platform to study in situ chemical mixing and interfacial reactions of liquid pearls.     

采用高分子自组装ZnO纳米线及其形成机理

介绍了一种能在各种晶面的硅衬底上制备垂直于衬底取向生长的ZnO纳米线阵列的新方法. 该法采用高分子络合和低温氧化烧结反应, 以聚乙烯醇(PVA)高分子材料作为自组装络合载体来控制晶体成核和生长. 首先通过PVA侧链上均匀分布的极性基团羟基(—OH)与锌盐溶液中的Zn²⁺离子发生络合作用, 然后滴加氨水调节络合溶液pH值为8.5±0.1, 使络离子Zn²⁺转变为Zn(OH)₂, 再将硅片浸入此溶液中, 从而在硅衬底表面得到较均匀的Zn(OH)₂纳米点, 随后在125 ℃左右Zn(OH)₂纳米点通过热分解转化为ZnO纳米点, 其后在420 ℃烧结过程中衬底上的ZnO纳米点在PVA高分子网络骨架对其直径的限域下逐渐取向生长成ZnO纳米线, 并且烧结初期PVA碳化形成的碳通过碳热还原ZnO为Zn, 再在氧气氛中氧化为ZnO的方式在纳米线顶端形成了催化活性点, 促进了纳米线顶端ZnO的吸收. 烧结后碳逐渐氧化被完全去除. 采用场发射扫描电镜(FE-SEM)、透射电镜(TEM, HR-TEM)和X射线衍射(XRD)对纳米线的分析结果表明, ZnO纳米线在硅衬底上分布均匀, 具有六方纤锌矿结构, 并且大多沿[0001]方向择优取向生长, 直径为20～80 nm, 长度可从0.5至几微米. 提出了聚合物控制ZnO结晶和形貌的网络骨架限域模型以解释纳米线的生长行为.     

Metallic single-crystal CoSi nanowires via chemical vapor deposition of single-source precursor

We report the synthesis, structural characterization, and electrical transport properties of free-standing single-crystal CoSi nanowires synthesized via a single-source precursor route. Nanowires with diameters of 10-150 nm and lengths of greater than 10 mum were synthesized through the chemical vapor deposition of Co(SiCl(3))(CO)(4) onto silicon substrates that were covered with 1-2 nm thick SiO(2). Transmission electron microscopy confirms the single-crystal structure of the cubic CoSi. X-ray absorption and emission spectroscopy confirm the chemical identity and show the expected metallic nature of CoSi, which is further verified by room-temperature and low-temperature electrical transport measurements of nanowire devices. The average resistivity of CoSi nanowires is found to be about 510 muOmega cm. Our general and rational nanowire synthesis approach will lead to a broad class of silicide nanowires, including those metallic materials that serve as high-quality building blocks for nanoelectronics and magnetic semiconducting Fe(1-x)Co(x)Si suitable for silicon-based spintronics.     

Synthesis of nickel nanowires via electroless nanowire deposition on micropatterned substrates

Electroless nanowire deposition on micropatterned substrates (ENDOM) is a promising new technique by which to direct the synthesis and precise placement of metallic nanowires. ENDOM is generally applicable to the preparation of metallic, semiconducting, and even insulating nanowires on technologically relevant substrates, is inexpensive, and can achieve high growth rates. The deposited nanowires are ultralong (centimeters) and can be patterned in arbitrary shapes. We demonstrate ENDOM using the growth of nickel nanowires. By controlling the deposition time, the width of the nanowires can be varied from 200 to 1000 nm and the height can be varied from 7 to 20 nm.     

Selective growth of Si nanowire arrays via galvanic displacement processes in water-in-oil microemulsions

Galvanic displacement processes are employed in water-in-oil microemulsions to deposit gold nanoclusters selectively on Si surfaces and sidewalls. The gold clusters then serve as catalysts to achieve selective growth of vertically and laterally aligned Si nanowire arrays by chemical vapor deposition via the vapor-liquid-solid growth mechanism. The size of the gold clusters is shown to have a good correlation with the microemulsion parameters, which in turn controls the size of the synthesized nanowires.     

Temperature dependence of the field effect mobility of solution-grown germanium nanowires

The temperature dependence of the field effect mobility was measured for solution-grown single-crystal Ge nanowires. The nanowires were synthesized in hexane from diphenylgermane by the supercritical fluid-liquid-solid process using gold nanocrystals as seeds. The nanowires were chemically treated with isoprene to passivate their surfaces. The electrical properties of individual nanowires were then measured by depositing them on a Si substrate, followed by electrical connection with Pt wires using focused ion beam assisted chemical vapor deposition. The nanowires were positioned over TaN or Au electrodes covered with ZrO2 dielectric that were used as gates to apply external potentials to modulate the conductance. Negative gate potentials increased the Ge nanowire conductance, characteristic of a p-type semiconductor. The temperature-dependent source/drain current-voltage measurements under applied gate potential revealed that the field effect mobility increased with increasing temperature, indicating that the carrier mobility through the nanowire is probably dominated either by a hopping mechanism or by trapped charges in fast surface states.     

Molten gallium as a catalyst for the large-scale growth of highly aligned silica nanowires

The vapor-liquid-solid (VLS) process is a fundamental mechanism for the growth of nanowires, in which a small size (5-100 nm in diameter), high melting point metal (such as gold and iron) catalyst particle directs the nanowire's growth direction and defines the diameter of the crystalline nanowire. In this article, we show that the large size (5-50 microm in diameter), low melting point gallium droplets can be used as an effective catalyst for the large-scale growth of highly aligned, closely packed silica nanowire bunches. Unlike any previously observed results using gold or iron as catalyst, the gallium-catalyzed VLS growth exhibits many amazing growth phenomena. The silica nanowires tend to grow batch by batch. For each batch, numerous nanowires simultaneously nucleate, grow at nearly the same rate and direction, and simultaneously stop growing. The force between the batches periodically lifts the gallium catalyst upward, forming two different kinds of products on a silicon wafer and alumina substrate. On the silicon wafer, carrot-shaped tubes whose walls are composed of highly aligned silica nanowires with diameters of 15-30 nm and length of 10-40 microm were obtained. On the alumina substrate, cometlike structures composed of highly oriented silica nanowires with diameters of 50-100 nm and length of 10-50 microm were formed. A growth model was proposed. The experimental results expand the VLS mechanism to a broader range.     

Silicon-silica nanowires, nanotubes, and biaxial nanowires: inside, outside, and side-by-side growth of silicon versus silica on zeolite

It was demonstrated that zeolite can be used as a pseudo-template to grow very fine and uniform silicon nanostructures via disproportionation reaction of SiO by thermal evaporation. Three distinct types of composite nanowires and nanotubes of silicon and silica were grown on the surfaces of zeolite Y pellets. The first type is formed by an ultrafine crystalline silicon nanowire sheathed by an amorphous silica tube (a silicon nanowire inside a silica nanotube). The second type is formed by a crystalline silicon nanotube filled with amorphous silica (a silicon nanotube outside a silica nanowire). The third type is a biaxial silicon-silica nanowire structure with side-by-side growth of crystalline silicon and amorphous silica. These silicon nanostructures exhibit unusually intense photoluminescence (in comparison to ordinary silicon nanowires).     

以DNA为模板构造苯胺-DNA复合物纳米线和聚苯胺纳米导线

在溶液中, 以DNA为模板构造出了线性的苯胺-DNA复合物纳米线. 用压缩气流将得到的复合物纳米线拉直并固定到云母基底上. 用原子力显微镜(AFM)可观察到形貌规整的苯胺-DNA复合物纳米线. 苯胺单体在溶液中能从各个方向上组装到DNA分子上, 从而使DNA模板分子的表面包裹了一层苯胺. 以苯胺-DNA复合物纳米线为前驱体通过进一步化学氧化聚合得到了以DNA为模板的聚苯胺纳米导线.     

High-quality ultralong Bi2S3 nanowires: structure, growth, and properties

A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi2S3 nanowires was reported, and the nanowires were comprehensively characterized. The diameters of the nanowires are about 60 nm, and their lengths range from tens of microns to several millimeters. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001], and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations. Optical absorption experiments revealed that the Bi2S3 nanowires are narrow-band semiconductors with a band gap E(g) approximately 1.33 eV. Electrical transport measurements on individual nanowires gave a resistivity of about 1.2 ohms cm and an emission current of 3.5 microA at a bias field of 35 V/microm. This current corresponds to a current density of about 10(5) A/cm2, which makes the Bi2S3 nanowire a potential candidate for applications in field-emission electronic devices.     

One-step growth of Si3N4 stem-branch featured nanostructures: Morphology control by VS and VLS mode

We report here one-step synthesis of Si₃N₄ nanodendrites by selectively applying a vapor-solid (VS) and vapor-liquid-solid (VLS) strategy via direct current arc discharge method. The resultant nanodendrites were characterized by scanning electron microscopy, energy-dispersive X-ray spectroscopy, transmission electron microscopy and X-ray powder diffraction. The spine-shaped nanodendrites were generated by a noncatalytic growth following a VS mode. The uniform secondary nanowire branches were epitaxial grown from two side surfaces of the nanowire stems. The pine-shaped nanodendrites were obtained through a catalytic growth in a VLS process. These branch nanowires were unsystematically grown from the nanocone-like stems. The photoluminescence spectra of the nanodendrites show a strong white light emission around 400-750 nm, suggesting their potential applications in light and electron emission devices.     

Selective growth of ag nanowires on Si(111) surfaces by electroless deposition

Electroless deposition of Ag on atomically flat H-terminated Si(111) surfaces in aqueous alkaline solutions containing Ag ions produced two different sizes of Ag nanowires along atomic step edges: (1) a narrow nanowire of 10 nm in width and 0.5 nm in height and (2) a wide nanowire of 35 nm in width and 11 nm in height. The narrow and wide nanowires were formed by immersion in the solutions containing less than 1 ppb and 8 ppm dissolved-oxygen concentrations, respectively. This result indicates that the dissolved oxygen initiates the formation of Ag nucleation sites and that the fabrication method has a possibility of controlling the size of Ag nanowires.     

Tungsten oxide nanowire growth by chemically induced strain

We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposition (CVD) conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900 degrees C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also to other nanowire systems.