Quadrupole interactions in pionic and muonic tantalum and rhenium

The hyperfine splitting of pionic and muonic X-rays in natural Re has been studied using the known ratio (accurate to 1.6 parts in 10⁵) of the quadrupole moments of the two naturally occurring ¹⁸⁵Re and ¹⁸⁷Re isotopes. From the hyperfine splitting of the ⁵g → 4f and 4f → 3d pionic X-rays the effective quadrupole hyperfine constants were determined to be ¹⁸⁷A₂^eff(4f) = 1.163 ± 0.010 keV and ¹⁸⁷A₂^eff(3d) = 5.39 ± 0.63 keV, giving strong interaction quadrupole shifts ₂(4f) = 46 ± 10 eV and ₂(3d) = 1.3 ± 0.6 keV. The strong interaction monopole shifts ₀ and widths Γ₀ of the 5g, 4f and 3d levels have also been measured. For the two higher orbits, standard optical-potential calculations fit the measured shifts and widths quite well. The observed deeper-lying 3d state, however, has shifts and widths that differ by a factor of 2 or more from the predictions. From the measured quadrupole hyperfine constants of the 4f level we calculate the spectroscopic quadrupole moments to be ¹⁸⁷Q^μ(gm) = 2.09 ± 0.04 b, ¹⁸⁷Q^π = 2.07 ± 0.02 b, ¹⁸⁵Q^μ = 2.21 ± 0.04 b, and ¹⁸⁵Q^π = 2.1 addition, muonic X-rays from ¹⁸¹Ta were observed; using the same methods for determining the quadrupole moment as above, a value of ¹⁸¹Q^μ = 3.28 ± 0.06 b was obtained, in good agreement with earlier published data.     

The effects of hydrogen dose and thermal treatment on the formation of microsplits in hydrogen implanted GaAs

Transmission electron microscopy has been used to study the effect of thermal treatment on the formation of microsplits and damage rafts in hydrogen implanted (1 × 10¹⁶ and 5 × 10¹⁶ H⁺ cm^-2) and annealed (700 and 800°C) GaAs. The results show that microsplit and damage raft formation in implanted samples may be prevented if the samples are first given a pre-anneal heat treatment for 15 minute intervals at 300, 350, 400 and 450°C, during which the hydrogen concentration is reduced without allowing vacancy coalescence to take place.     

Measurements of interaction cross sections and radii of He isotopes

Secondary beams of ³He, ⁴He, ⁶He, and ⁸He were produced through the projectile fragmentation of an 800 MeV/nucleon ¹¹B primary beam. Interaction cross sections (σ_I) of all He isotopes of 790 MeV/nucleon on Be, C, and Al targets were measured by a transmission-type experiment. The interaction nuclear radii of He isotopes R_I(He) = (σ_I/π)^1/2 − R _I(T) where R_I(T) is the radius of the target nucleus, have been deduced to be R_I(³He) = 1.59 ± 0.06 fm, R_I(⁴He) = 1.40 ± 0.05 fm, R_I(⁶He) = 2.21 ± 0.06 fm, and R_I(⁸He) = 2.52 ± 0.06 fm.     

Spectroscopy of C

The ¹⁴C(t, p)¹⁶C reaction locates five new states in ¹⁶C, at excitation energies of 3120 ± 15, 3983 ± 10, 4136 ± 10 and 6109 ± 15 keV, in addition to the g.s. and 1.76 MeV states. The 3.02 and 3.98 MeV states appear to be the second 0⁺ and 2⁺ 2p-2h states, respectively. The 4.14 MeV state has J^π = 4⁺ and the 6.11 MeV state has J^π = 2⁺, 3⁻, or 4⁺.     

Projectile coulomb excitation of Ne and Ne

The static quadrupole moments of the first excited J^π = 2⁺ states in ²⁰Ne and ²²Ne and the reduced electric quadrupole transition probabilities of these states to the ground states were measured via projectile Coulomb excitation. The quadrupole moments were deduced from the shapes of γ-ray angular distributions. The results are: Q(²⁰Ne, 2⁺) = −0.20±0.05 b and Q(²²Ne, 2⁺) = −0.11±0.05 b. The transition strengths were deduced from yield measurements and by comparison with the yields of target γ-rays. The results are: B(E2; 0⁺ → 2⁺, ²⁰Ne) = 0.037±0.003 e² · b² and B(E2; 0⁺ → 2⁺, ²²Ne) = 0.025±0.002 e²· b². The results for the transition strengths are consistent with the results of accurate timing methods and resolve discrepancies between previous experiments. The results for the quadrupole moments are consistent with earlier measurements, although the mean values we obtain are slightly lower. The experimental measurements are compared with theoretical predictions and a detailed discussion is given of corrections to this type of reorientation experiment.     

Fossil track studies of the Omolon pallasite crystals

The olivine and stanfildite crystals from Omolon pallasite meteorite were selected from some residue and from locations of an about 150 g fragment of that meteorite in the Meteoritic Committee, Moscow, Russia. The radiation age of Amnion pallasite was determined to be about 78 MY The Olivine crystals were mounted in epoxy resin, polished and etched in Krishnaswami solution, modified by adding 30 g per liter oxalic acid. The etching of the olivine crystals was performed in hermetically closed vessels during 36–72 hours at T = 100 ° C. The measured Fe- group track density varies from 3 × 10⁴ up to 2.6 × 10⁵ track. cm⁻². The measure in 12 Fe-group track rich olivine 43 track due to VVH nuclei were found. It means that the depth of ablation of Omolon meteorite does not exceed (8.2 ± 2.1) cm out of preatmospheric surface for the most favourable locations.     

Polarisation circulaire du rayonnement gamma de Sb, Cs et Ag

The βγ circular polarization correlation of the 3⁻(β⁻ 621 keV)3⁻(γ 1692)2⁺ cascade in ¹²⁴Sb, the 4⁺(β⁻ 662)4⁺ (γ 796)2⁺ (γ 605)0⁺ in ^13Z4Cs and the 6⁺(β⁻529)6⁺ (γ 937)4⁺ (γ 885)2⁺ (γ 658)0⁺ in ^110mAg have been studied by using a Compton effect polarimeter. The measured asymmetry parameters are 0.172±0.004, −0.0702 ±0.0024 and 0.0549±0.0013 respectively.     

Analyzing power in the reaction pp→dπ for beam momenta from 1.17 to 1.96 GeV/c

The analyzing power A_y0 in the reaction p↑p→dπ⁺ has been measured using the polarized proton beam at Argonne National Laboratory's zero gradient synchrotron. Data were taken at beam momenta of 1.17, 1.47, 1.70, and 1.96 GeV/c and for pion center of mass angles from 8° to 163°.     

Temperature dependence of the calibration factor of radon and radium determination in water samples by SSNTD

The sensitivity of a ²²⁶Ra determination method of water samples by SSNTD was measured as a function of storage temperature during exposure. The method is based on an etched track type radon monitor, which is closed into a gas permeable foil and is immersed in the water sample. The sample is sealed in a glass vessel and stored for an exposure time of 10–30 days. The sensitivity increased more than a factor of two when the storage temperature was raised from 2 °C to 30 °C. Temperature dependence of the partition coefficient of radon between water and air provides explanation for this dependence. For practical radio-analytical application the temperature dependence of the calibration factor is given by fitting the sensitivity data obtained by measuring ²²⁶Ra standard solutions (in the activity concentration range of 0.1–48.5 kBq m⁻³) at different storage temperatures.     

π Meson interaction on He at 120, 145 and 165 MeV

The total cross sections and the differential cross sections of π⁺-⁴He elastic and inelastic reactions at E_π=120, 145 and 165 MeV have been measured using a 38 cm diffusion cloud chamber in a magnetic field exposed to the Frascati Laboratories' pion beam. Total π⁺ track lengths of (2141 ± 10) × 10³ cm, (3435 ± 10) × 10³ cm and (2413 ± 10) × 10³ cm were measured at the three considered energies, respectively. The elastic cross-section data are in good agreement with the results of the Dubna-Torino collaboration. The total inelastic cross sections have been obtained taking into account the contributions from all the inelastic channels. The analysis of the various inelastic processes has allowed us to distinguish five main reaction mechanisms, which compare reasonably with the existing data and with the models for pion-light-nuclei interactions.     

Hadronic production by ee collisions at the energy 990 MeV with the Orsay storage ring

Data were taken at the energy 2E = 990 MeV to search for multibody events, with the same large solid angle detector which has been used for the measurement of the , ω andφ production by e⁺e⁻ annilations. Assuming a π⁺π⁻π⁰π⁰ production by the quasi two-body process e⁺e⁻ → → ωπ⁰ we give the correspondi ng cross section σ(e⁺e⁻ → π⁺π⁻π⁰π⁰) = (1.1 ± 0.5) 10⁻³² cm². Since no events with 3 and 4 charged pions have been observed σ(e⁺e⁻ → π⁺π⁻π⁰π⁻) 1.5 × 10⁻³³ cm².     

TL and PTTL in natural fluorite previously irradiated with gamma rays and heavy ions

The effect of annealing temperature on the phototransfer thermoluminescence (PTTL) signal was studied to determine the appropriate annealing temperature for treating the natural powder before irradiation. The temperatures used to anneal virgin natural fluorite samples (only natural dose without giving the samples any artificial doses) were 150, 250, 350, 450, 550, 650 and 750°C for a duration of 1 h in each case. The results show that the PTTL response did not change for anneal temperatures up to 450°C, but at higher temperatures the signal decreased rapidly. The height of the 90°C peak decreased by two orders of magnitude as the anneal temperature increased from 450 to 750°C, whilst the height of the 180°C peak decreased by three orders of magnitude between the same two annealing temperatures. In order to investigate the effect of previous gamma rays and heavy ion irradiation on thermoluminescence (TL) and PTTL signals, powdered samples of natural fluorite from Cornwall, England, were annealed at 500°C and then irradiated (at GSI, Darmstadt, Germany) with ¹⁶¹Dy ions of energy 13 Mev/n; the range of fluences used was from 10⁴ to 10¹² ion cm⁻². Identical samples were given gamma doses in the range 1 Gy to 2.6 × 10⁴ Gy in order to compare the effects of gamma rays and heavy ions. The sensitivities of TL and PTTL were studied by giving the samples a gamma test dose of 1 Gy after annealing the samples at 500°C for 30 min in order to eliminate the TL resulting from previous gamma or heavy ion irradiation.     

Transient behavior of the thermal ion emission from KCl(0 0 1) upon polarity reversal of the electric extraction field

The technique of polarity reversal of the external electric extraction field (strength: 10² V/cm) was applied to study the relaxation of the thermal ion emission from the KCl(0 0 1) single crystal surface. Transient currents of the K⁺ and K₂Cl⁺ ions upon switching from the emission suppression to the ion extraction mode were recorded as a function of the evaporation time, the temperature, and the time of field reversal. The temperature dependence of the time constants of the K⁺ ions obtained from the exponential decreases of the emission currents to their steady-state emission resulted as logτ_h(s)=−(13.39±0.56)+(12.42±0.49)10³/T in a high temperature interval of 826–930 K after a prolonged heating period and as logτ_l(s)=−(20.65±1.04)+(16.77±0.81)10³/T in a low temperature interval of 750–801 K at the initial stage of evaporation, with corresponding activation energies of E_h(K⁺)=2.47±0.14 eV and E_l(K⁺)=3.32±0.16 eV, respectively. The transient currents can be interpreted by a partial adsorption of the suppressed ion currents at the kinks of the surface steps. The differences in the high- and low-temperature runs may be attributed to a strong coarsening of the surface at higher temperatures, which occurs as a bunching of monosteps to macrosteps and/or to an enrichment and segregation of divalent impurities at the surface. The transient behavior of the molecular K₂Cl⁺ ions seems to be strongly correlated with that of the K⁺ ions. This correlation is possibly caused by changes of the strength or the sign of the local electrical field connected with the excess charge at the kinks.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Extending the time range of luminescence dating using red TL (RTL) from volcanic quartz

The potential of red thermoluminescence (RTL) emission from quartz, as a dosimeter for baked sediments and volcanic deposits, has received some attention over the past decade. While there have been some important observations relating to signal stability, saturation characteristics and emission wavebands, there has not been a systematic analysis of RTL properties of older (i.e., >1 Ma), quartz-bearing known age volcanic deposits. We have undertaken such an analysis using independently-dated silicic volcanic deposits from New Zealand, ranging in age from 300 ka through to 1.6 Ma. We observed a complex RTL emission in most volcanic quartzes, which consists of a number of discrete high temperature (i.e, >220°C) TL peaks. Isothermal analysis indicates a stable dating trap (E=2.03 eV; S=4.20×10¹⁵) which is stable at ambient (c. 20°C) temperatures for >10⁹ a. We confirm the slow onset of saturation with dose, and the limited extent of sensitivity changes due to dosing and TL readout. As such, there is much potential for exploiting the dosimeter in dating studies and we present the results from a modified single aliquot regenerative (SAR) procedures which indicate that there is a good agreement between RTL dating and other methods over time scales 10⁵–10⁶ a. This paper presents a summary of the most important related results of our findings and outlines the configuration of photomultiplier and filter combinations which maximizes RTL detection for temperatures up to 500°C.     

Reversible H2 passivation of Si ≡ Si3 interface defects in (1 1 1)Si/SiO2

K-band electron spin resonance (ESR) at 4.3 K has revealed the dipole-dipole (DD) interaction effects between [1 1 1]P_b centers (^*Si ≡ Si₃ defects with unpaired sp³ hybrid [1 1 1]) at the 2 dimensional (1 1 1)Si/SiO₂ interface. This has been enabled by the perfectly reversible H₂ passivation of P_b, which affects the defect's spin state. Sequential hydrogenation at 253–353°C and degassing treatments in high vacuum at 743–835°C allowed to vary the P_b density in the range 5 × 10¹⁰ < [P_b] (1.14 ± 0.06) × 10¹³ cm^-2. With increasing [P_b] fine structure doublets are clearly resolved. It is found that (1 1 1)Si/SiO₂ interfaces, dry thermally grown at ≈920°C, naturally comprise a ^*Si ≡ Si₃ defect density — passivated or not — of 1.14 × 10¹³ cm^-2.     

The decay of Sc and V

The decays of ⁴⁸Sc and ⁴⁸V have been studied with Ge(Li) diodes, scintillation spectrometers and a double focussing beta-ray spectrometer. The 3507 keV level, from which originates the quadruple cascade (9.4±0.5)% in the ⁴⁸Sc decay, is also de-excited by a 1212 keV cross-over transition to the 2295 keV (4⁺) level and supports the assumption, that the 3507 keV level has a spin 6⁺. The first member of the reported triple cascade in the ⁴⁸V decay is shown to be a doublet of 928.9±0.7 (1.2±0.2)% and 944.3±0.5 keV (8.0±0.5)% gamma rays, both followed by the 1311.4–983.3 keV cascade. Evidence was found, that the 2421 keV (2⁺) level is excited by weak gamma rays from high-energy levels. The K/β⁺ ration in the ⁴⁸V decay is 0.69±0.05 The Q-values of ⁴⁸Sc and ⁴⁸V are calculated to be 3986±7 keV and if 4015±4 keV, respectively. The energy of the gamma ray of ⁴⁷Sc, which is present as an impurity, is 159.2±0.5 keV.     

The C(Li, t)O reaction at 20 MeV

States in ¹⁶O op to an excitation energy of 16.9 MeV were observed from the ¹³C(⁶Li, t)¹⁶O reaction at 20 MeV. Differential cross sections were obtained from θ_lab = 15° to 105° for the triton groups corresponding to the states in ¹⁶O at 6.13, 6.92, 7.12, 8.87, 9.85, 10.35 and 11.09 MeV.     

X-ray and high resolution selenium-77 solid state NMR spectroscopy as complementary probes to structural studies of organophosphorus diselenides

high resolution solid state NMR spectroscopy was employed to study structural properties of bis(diisopropoxyphosphorothioyl) diselenide 1 and bis(dineopentoxyphosphorothioyl) diselenide 2. The principal elements T_ii of effective dipolar/chemical shift tensor were calculated from spinning sideband intensities employing the WIN-MAS program. The values of anisotropy and asymmetry parameters reflect the distortion of the selenium environment. It was found that the T₃₃ component mostly contributes to changes in the isotropic chemical shifts. CP/MAS experiments were used to decide the assignment of space group by counting the number of crystallographically unique selenium centers in the unit cell. Crystals of diselenide 1 are triclinic, space group P with a=8.485(3) Å, b=8.508(1) Å, c=8.511(2) Å, =98.835(15)°, β=111.653(24)°, γ=93.524(21)°, V=559.5(3) ų, D_c=1.544(2) g/cm³ and Z=1. Refinement using 2222 reflections for 157 variables gives R=0.037. Crystals of diselenide 2 are triclinic, space group P1 with a=9.1418(8) Å, b=9.1465(8) Å, c=9.9200(9) Å, =74.751(8)°, β=74.629(7)°, γ=82.216(7)°, V=769.7(1) ų, D_c=1.365(2) g/cm³ and Z=1. Refinement using 3316 reflections for 297 variables gives R=0.0272.     

The effect of boron ion implantation and annealing on the microstructure and electrical characteristics of the diamond films

Diamond films were doped by boron ion-implantation with the energy of 120 keV. The implantation dose ranged from 10¹⁴ to 10¹⁷ cm⁻². After the implantation, the diamond films were annealed at different temperatures (600–750°C) for different times (2–15 min). Scanning Electronic Microscope, Raman and Secondary Ion Mass-spectrum were used to investigate the effect of boron ion implantation and annealing on the microstructure of the diamond films. The electrical resistivities of the diamond films were also measured. It was found that the best dose of boron ion-implantation into the diamond film was around 10¹⁶ cm⁻². The appropriate annealing temperature and time was 700°C and 2–5 min, respectively. After implantation, the resistivities were reduced to 0.1 Ω cm (almost nine orders lower than the unimplanted diamond films). These results show that boron ion implantation can be an effective way to fabricate P-type diamond films.