Transport and percolation in a low-density high-mobility two-dimensional hole system

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime (p > or approximately4x10;{9} cm;{-2}), the nonmonotonic temperature dependence ( approximately 50-300 mK) of the resistivity is consistent with temperature dependent screening of residual impurities. At a fixed temperature of T=50 mK, the conductivity versus density data indicate an inhomogeneity driven percolation-type transition to an insulating state at a critical density of 3.8x10;{9} cm;{-2}.     

Connecting the reentrant insulating phase and the zero-field metal-insulator transition in a 2D hole system

We present the transport and capacitance measurements of 10 nm wide GaAs quantum wells with hole densities around the critical point of the 2D metal-insulator transition (critical density p(c) down to 0.8 × 10(10)/cm2, r(s) ～ 36). For metallic hole density p(c) < p < p(c) + 0.15 × 10(10)/cm2, a reentrant insulating phase (RIP) is observed between the ν = 1 quantum Hall state and the zero-field metallic state and it is attributed to the formation of pinned Wigner crystal. Through studying the evolution of the RIP versus 2D hole density, we show that the RIP is incompressible and continuously connected to the zero-field insulator, suggesting a similar origin for these two phases.     

Weak-localization-like temperature-dependent conductivity of a dilute two-dimensional hole gas in a parallel magnetic field

We have studied the magnetotransport properties of a high mobility two-dimensional hole gas (2DHG) in a 10 nm GaAs quantum well with densities in the range of (0.7-1.6) x 10(10) cm(-2) on the metallic side of the zero-field "metal-insulator transition." In a parallel field well above B(c) that suppresses the metallic conductivity, the 2DHG exhibits a conductivity Delta(g)(T) approximately (1/pi) (e(2)/h)lnT reminiscent of weak localization for Fermi liquids. The experiments are consistent with the coexistence of two phases in our system: a metallic phase and a weakly insulating Fermi liquid phase.     

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute [ (3.4-6.8)x10(10) cm(-2)] GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating before it is fully spin polarized. The minority-spin population at the transition is approximately 8x10(9) cm(-2), close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.     

Metal-to-insulator crossover in the low-temperature normal state of Bi(2)Sr(2-x)La(x)CuO(6+delta)

We measure the normal-state in-plane resistivity of Bi(2)Sr(2-x)La(x)CuO(6+delta) single crystals at low temperatures by suppressing superconductivity with 60 T pulsed magnetic fields. With decreasing hole doping, we observe a crossover from a metallic to an insulating behavior in the low-temperature normal state. This crossover is estimated to occur near 1/8 doping, well inside the underdoped regime, and not at optimum doping as reported for other cuprates. The insulating regime is marked by a logarithmic temperature dependence of the resistivity over two decades of temperature, suggesting that a peculiar charge localization is common to the cuprates.     

Electric-field-dependent charge-carrier velocity in semiconducting carbon nanotubes

Charge transport in semiconducting single-walled nanotubes (SWNTs) with Schottky-barrier contacts has been studied at high bias. We observe nearly symmetric ambipolar transport with electron and hole currents significantly exceeding 25 microA, the reported current limit in metallic SWNTs due to optical phonon emission. Four simple models for the field-dependent velocity (ballistic, current saturation, velocity saturation, and constant mobility) are studied in the unipolar regime; the high-bias behavior is best explained by a velocity-saturation model with a saturation velocity of 2 x 10(7) cm/s.     

Spin susceptibility of an ultra-low-density two-dimensional electron system

We determine the spin susceptibility in a two-dimensional electron system in GaAs/AlGaAs over a wide range of low densities from 2x10(9) cm(-2) to 4x10(10) cm(-2). Our data can be fitted to an equation that describes the density dependence as well as the polarization dependence of the spin susceptibility. It can account for the anomalous g factors reported recently in GaAs electron and hole systems. The paramagnetic spin susceptibility increases with decreasing density as expected from theoretical calculations.     

Thermopower evidence for Wigner crystallization in the insulating phase of two-dimensional GaAs bilayer hole systems

We report on low-temperature thermopower measurements of interacting GaAs bilayer hole systems in the limit of no interlayer tunneling. These systems exhibit a reentrant insulating phase near the many-body quantum Hall state (QHS) at total filling factor ν=1, when both layers have the same density. The diffusion thermopower is expected to diverge as T^-1 in the presence of an energy gap (Wigner crystal) or to vanish in the case of a disordered induced mobility gap. Our results show that, as the temperature is decreased, the diffusion thermopower exhibits a T^-1 dependence in the insulating phase around ν=1. This behavior clearly indicates the opening of an energy gap at low temperature, in agreement with the formation of a pinned Wigner solid. Finally, we report on the T-dependence of the thermopower at ν=1.     

Singular effect of disorder on electronic transport in strongly coupled electron-phonon systems

We solve the disordered Holstein model in three dimensions considering the phonon variables to be classical. After mapping out the phases of the "clean" strong coupling problem, we focus on the effect of disorder at strong electron-phonon (EP) coupling. The presence of even weak disorder (i) enormously enhances the resistivity (rho) at T=0, simultaneously suppressing the density of states at the Fermi level, (ii) suppresses the temperature dependent increase of rho, and (iii) leads to a regime with drho/dT<0. We locate the origin of these anomalies in the disorder induced tendency towards polaron formation, and the associated suppression in effective carrier density and mobility. These results, explicitly at "metallic" density, are of direct relevance to disordered EP materials such as covalent semiconductors, the manganites, and to anomalous transport in the A-15 compounds.     

Density-induced interchange of anisotropy axes at half-filled high Landau levels

We observe density-induced 90 degrees rotations of the anisotropy axes in transport measurements at half-filled high Landau levels in the two dimensional electron system, where stripe states are proposed ( nu = 9/2, 11/2, etc.). Using a field effect transistor, we find the transition density to be 2.9x10(11) cm(-2) at nu = 9/2. Hysteresis is observed in the vicinity of the transition. We construct a phase boundary in the filling factor magnetic field plane in the regime 4.4相似文献   

Effect of interfacial shallow traps on polaron transport at the surface of organic semiconductors

The photo-induced electron and hole transfer across the semiconductor-dielectric interface in trap-dominated p-type organic field-effect transistors has been investigated. It has been observed that the transfer of electrons into the dielectric results in a decrease of the field-effect mobility of polarons, suggesting that additional shallow traps are generated in the conduction channel. Using this effect, the dependence of the field-effect mobility on the density of shallow traps, mu(N), has been measured, which allowed us to estimate the average polaron trapping time, tau_{tr}=50+/-10 ps, and the density of shallow traps, N0=(3+/-0.5) x 10(11) cm(-2), in the channel of single-crystal tetracene devices.     

Pseudogap formation in the intermetallic compounds (Fe1-xVx)3Al

Optical conductivity data of the intermetallic compounds (Fe1-xVx)3Al ( 0相似文献   

Magnetic-field-induced insulating phases at large r s

Exploring a two-dimensional hole system in the large r(s) regime we found a surprisingly rich phase diagram. At the highest densities, beside the nu =1/3, 2/3, and 2/5 fractional quantum Hall states, we observe both of the previously reported high field insulating and reentrant insulating phases. As the density is lowered, the reentrant insulating phase initially strengthens, then it unexpectedly starts weakening until it completely disappears. The intricate behavior of the insulating phases can be explained by a nonmonotonic melting line in the nu-r(s) phase space.     

Anomalous behavior of the surface tension at the interface of the metallic and insulating phases in the vicinity of the metal-insulator phase transition in a magnetic field

Mean-field equations describing the metal-insulator (MI) transition are formulated. They involve two coupled order parameters characterizing this transition: (i) a scalar order parameter describing the density change accompanying the transition from the insulating state to the metallic one and (ii) an order parameter (a two-component vector) describing the electron density in the metallic or semimetallic phase affected by the applied magnetic field. Two components of this vector correspond to different possible spin states of electrons in the applied magnetic field. The transition in the density of metallic and insulating phases being a first order phase transition is treated in terms of the Cahn-Hilliard-type gradient expansion. The transition in the electron density is a second order phase described by the Ginzburg-Landau-type functional. The coupling of these two parameters is described by the term linearly dependent on the electron density n in the metal with the proportionality factor being a function of the density of the metallic phase. The derived equations are solved in the case of the MI interface in the presence of both parallel and perpendicular uniform magnetic fields. The calculated surface tension Σ_mi between the metallic and insulating phases has a singular behavior. In the limit of zero electron density n ? 0, Σ_mi ～ n ^3/2. Near the MI transition point T _c(h) in the applied magnetic field, Σ_mi ～ [T - T _c(h)]^3/2. The singular behavior of the surface tension at the MI interface results in the clearly pronounced hysteresis accompanying the transition from the insulating to metallic state and vice versa.     

Temperature-dependent transport in suspended graphene

The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 50.5 x 10(11) cm(-2), the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T=240 K the mobility is approximately 120,000 cm2/V s, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10(8) cm(-2).     

Rb(5PJ)与He,N2的碰撞精细结构混合和猝灭

在气体样品池条件下,研究了Rb(5PJ) (He,N2)碰撞能量转移过程.用调频半导体激光器激发Rb原子至Rb(5P3/2)态,在不同的He或N2气压下,测量了直接5P3/2→5S1/2荧光和转移5P1/2→5S1/2荧光.对于Rb(5PJ)与He的碰撞,只发生精细结构转移(略去碰撞猝灭效应),电子态能量仅能转移为He原子的平动能.在与N2的碰撞中,向分子振转态的转移是重要的.本实验中,Rb的密度为4.5×1011 cm-3,由辐射陷获理论得到5P1/2→5S1/2的有效辐射率为2.47×107 s-1.利用速率方程分析,可以得到碰撞转移速率系数,对于He,5P3/2→5S1/2转移速率系数kHe21=2.61×10 12 cm3·s.对于N2,测量5PJ He和5PJ N2两种情况下直接荧光与敏化荧光的相对强度比,利用最小二乘法确定5Pa/2→5S1/2转移速率系数kN212=2.36×10-11 cm3·s,5PJ态猝灭速率系数kN2=1.44×10-11 cm3·s-1.由实验结果证实了Cs-N2主要是直线式碰撞传能机制,与其他实验结果进行了比较.     

Magnetic field dependence of the metal–insulator transition in Ga[Al]As-heterostructures

A metal–insulator transition at zero magnetic field is observed in Ga[Al]As-heterostructures where a high density of self-assembled InAs-quantum dots is located in the region of the two-dimensional electron gas (2DEG). This transition occurs only in samples with high dot densities. In contrast to other two-dimensional systems showing a metallic phase the Coulomb energy is comparable to the kinetic energy in our systems. Measurements in perpendicular fields reveal that the resistivity at B=0 is composed of several contributions. In the metallic regime a weak localization peak is superposed on top of a broad negative magnetoresistivity. In the insulating regime, the weak localization peak at B=0 develops into a very pronounced negative magnetoresistivity with decreasing electron density. Pronounced, almost B-periodic oscillations in the magnetoresistivity are observed in addition to universal conductance fluctuations.     

Density of states of amorphous GdxSi1-x at the metal-insulator transition

We have determined the electronic density of states of amorphous Gd xSi (1-x), N(GdSi)(E), in the vicinity of the metal-insulator transition by measuring the tunneling conductance dI/dV across a Gd xSi (1-x)/oxide/Pb tunnel junction at low T (T approximately 100 mK). By applying a magnetic field we can tune through the metal-insulator transition and simultaneously measure the transport and N(E) on a single sample. We find a smooth transition from a metal with strong Coulomb interactions to a developing Coulomb gap in the insulating regime. In the metallic region N(GdSi)(0) scales approximately with sigma(2).